ELM-TECH ELM34803AA-N

Dual P-channel MOSFET
ELM34803AA-N
■General description
■Features
ELM34803AA-N uses advanced trench technology to
provide excellent Rds(on), low gate charge and low gate
resistance.
•
•
•
•
Vds=-30V
Id=-8A
Rds(on) < 22mΩ (Vgs=-10V)
Rds(on) < 34mΩ (Vgs=-4.5V)
■Maximum absolute ratings
Parameter
Drain-source voltage
Symbol
Vds
Limit
-30
Unit
V
Vgs
±25
-8
-6
V
Idm
Ias
-40
-30
A
A
Eas
45
mJ
Gate-source voltage
Ta=25°C
Ta=70°C
Continuous drain current
Id
Pulsed drain current
Avalanche current
Avalanche energy
L=0.1mH
Ta=25°C
Power dissipation
Pd
Ta=70°C
Junction and storage temperature range
Tj, Tstg
Note
A
2.00
3
W
1.28
-55 to 150
°C
■Thermal characteristics
Parameter
Maximum junction-to-ambient
Symbol
Rθja
■Pin configuration
Typ.
Max.
62.5
Unit
°C/W
Note
■Circuit
SOP-8(TOP VIEW)
1
8
2
7
3
6
4
5
Pin No.
Pin name
1
2
SOURCE1
GATE1
3
4
5
SOURCE2
GATE2
DRAIN2
6
7
8
DRAIN2
DRAIN1
DRAIN1
4-1
D2
D1
G2
G1
S1
S2
Dual P-channel MOSFET
ELM34803AA-N
■Electrical characteristics
Parameter
STATIC PARAMETERS
Drain-source breakdown voltage
Symbol
Condition
Min.
BVdss Id=-250μA, Vgs=0V
-30
Zero gate voltage drain current
Idss
Vds=-24V, Vgs=0V
Vds=-20V, Vgs=0V, Tj=125°C
Gate-body leakage current
Igss
Vds=0V, Vgs=±25V
Gate threshold voltage
Static drain-source on-resistance
Forward transconductance
Diode forward voltage
Max. body-diode continuous curren
Vgs(th) Vds=Vgs, Id=-250μA
Vgs=-10V, Id=-9A
Rds(on)
Vgs=-4.5V, Id=-7A
Gfs
Vsd
Vds=-5V, Id=-9A
If=-9A, Vgs=0V
-1.0
Ta=25°C
Typ. Max. Unit Note
V
-1
-10
μA
±100
nA
-1.5
20
-3.0
22
V
29
34
mΩ
1
-1
S
V
1
1
-2
A
20
Is
DYNAMIC PARAMETERS
Input capacitance
Ciss
1480
pF
Output capacitance
Reverse transfer capacitance
Gate resistance
Coss Vgs=0V, Vds=-15V, f=1MHz
Crss
Rg Vgs=0V, Vds=0V, f=1MHz
334
231
2.9
pF
pF
Ω
30
15
nC
nC
2
2
SWITCHING PARAMETERS
Total gate charge (10V)
Total gate charge (4.5V)
Qg
Qg
Vgs=-10V, Vds=-15V
Gate-source charge
Gate-drain charge
Turn-on delay time
Qgs Id=-9A
Qgd
td(on)
5
6
13
nC
nC
ns
2
2
2
Turn-on rise time
Turn-off delay time
tr
Vgs=-10V, Vds=-15V
td(off) Id≈-9A, Rgen=6Ω
8
16
ns
ns
2
2
12
40
26
ns
ns
nC
2
Turn-off fall time
Body diode reverse recovery time
Body diode reverse recovery charge
tf
trr
Qrr
If=-9A, dl/dt=100A/μs
If=-9A, dl/dt=100A/μs
NOTE :
1. Pulsed width≤300μsec and Duty cycle≤2%.
2. Independent of operating temperature.
3. Pulsed width limited by maximum junction temperature.
4. Duty cycle ≤ 1%.
4-2
Dual P-channel MOSFET
Level Enhancement Mode P2003KV
ELM34803AA-N
NIKO-SEM P-Channel Logic
SOP-8
Field Effect Transistor
■Typical electrical and thermal characteristics
Output Characteristics
VGS = 10V
V GS = 7V
25
V G S = 4 .5 V
20
15
10
5
VGS = 3V
0
1
1 .5
-VDS, Drain-To-Source Voltage(V)
2
RDS(ON)ON-Resistance(OHM)
0.06
0.04
0.02
ID = -9A
0
2
4
6
0.06
0.05
8
VGS = 4.5V
0.04
0.03
VGS = 10V
0.02
0.01
0
0.08
0
0.07
2 .5
On-Resistance VS Gate-To-Source
0.10
RDS(ON)ON-Resistance(OHM)
0 .5
On-Resistance VS Drain Current
0.08
RDS(ON)ON-Resistance(OHM)
-ID, Drain-To-Source Current(A)
30
Halogen-Free & Lead-Free
0
5
1.5
RDS(ON) ╳
1.4
RDS(ON) ╳
1.3
RDS(ON) ╳
1.2
RDS(ON) ╳
1.1
RDS(ON) ╳
1.0
RDS(ON) ╳
0.9
RDS(ON) ╳
0.8
RDS(ON) ╳
0.7
-50
25
20
15
T j =125° C
T j =25° C
T j =-20° C
0
1.0
-25
0
25
50
75
100
125
150
Gate charge Characteristics
Characteristics
10
-VGS , Gate-To-Source Voltage(V)
-ID, Drain-To-Source Current(A)
Transfer Characteristics
5
25
TJ , Junction Temperature(˚C)
V DS = -15V
10
20
V GS=-10V
ID =-9A
-VGS, Gate-To-Source Voltage(V)
30
15
On-Resistance VS Temperature
RDS(ON) ╳
10
10
-ID , Drain-To-Source Current
8
ID=-9A
V DS=-15V
6
4
2
0
1.5
REV 0.9
2.0
2.5
3.0
3.5
4.0
-VGS, Gate-To-Source Voltage(V)
4.5
0
5.0
3
4-3
5
10
15
20
Qg , Total Gate Charge
25
Sep-21-2009
30
Dual P-channel MOSFET
Level Enhancement Mode P2003KV
NIKO-SEM P-Channel Logic
ELM34803AA-N
SOP-8
Halogen-Free & Lead-Free
Field Effect Transistor
Body Diode Forward Voltage VS Source current
Capacitance Characteristic
1.0E+02
-IS , Source Current(A)
2.00E+03
C , Capacitance(pF)
1.60E+03
Ciss
8.00E+02
Coss
0
5
10
15
20
-VDS, Drain-To-Source Voltage(V)
1.0E-03
25
0.0
30
Safe Operating Area
1000
↓
70
1
NOTE :
1.V GS= 10V
2.TA=25° C
3.RθJA = 62.5° C/W
4.Single Pulse
0.8
1.0
1.2
Power(W)
SINGLE PULSE
RθJA = 62.5° C/W
TA=25° C
60
50
1m s
40
10m s
100m s
1S
10S
DC
30
20
10
0
0.01
1
10
0.0001
100
-VDS, Drain-To-Source Voltage(V)
0.001
0.01
0.1
1
10
Transient Thermal Response Curve
1.00E+01
Transient Thermal Resistance
0.6
80
100us
r(t) , Normalized Effective
0.4
Single Pulse Maximum Power Dissipation
90
0.1
0.2
-VSD, Source-To-Drain Voltage(V)
100
Operation in This
Area is Lim ite d by
RDS(ON)
10
0.1
T J =25 ° C
1.0E-02
1.0E-05
0.00E+00
-ID , Drain Current(A)
1.0E-01
1.0E-04
Crss
100
T J =150° C
1.0E+00
1.20E+03
4.00E+02
1.0E +01
1.00E+00
Duty Cycle=0.5
0.2
Note
0.1
1.00E-01
0.05
0.02
1.00E-02
0.01
1.Duty cycle, D= t1 / t2
2.RthJA = 62.5 ℃ /W
3.TJ-TA = P*RthJA(t)
4.RthJA(t) = r(t)*RthJA
single Pluse
1.00E-03
1.E-06
1.E-05
1.E-04
1.E-03
1.E-02
1.E-01
T1 , Square Wave Pulse Duration[sec]
REV 0.9
4
4-4
1.E+00
1.E+01
1.E+02
Sep-21-2009