C8051F330-GDI​

C8051F330-GDI
25 MIPS, 8 kB Flash, 10-Bit DAC, 10-Bit ADC
MCU Die in Wafer Form
Analog Peripherals
- 10-Bit ADC
Programmable throughput up to 200 ksps
Up to 16 external inputs; programmable as single-ended or differential
•
Reference from internal VREF, VDD, or external
pin
•
Internal or external start of conversion sources
•
Built-in temperature sensor (±3 °C)
10-bit DAC (Current Mode)
Comparator
•
Programmable hysteresis and response time
•
Configurable to generate interrupts or reset
•
Low current (0.4 µA)
•
•
-
On-Chip Debug
- On-chip debug circuitry facilitates full speed, nonintrusive in-system debug (no emulator required)
Provides breakpoints, single stepping, watchpoints
Inspect/modify memory, registers, and stack
Supply Voltage: 2.7 to 3.6 V
- Typical operating current: 6.4 mA at 25 MHz
9 µA at 32 kHz
Typical stop mode current: <0.1 µA
Temperature Range: –40 to +85 °C
High-Speed 8051 µC Core
- Pipelined instruction architecture; executes 70% of
-
Memory
- 768 bytes data RAM
- 8 kB Flash; in-system programmable in 512 byte
sectors (512 bytes are reserved)
Digital Peripherals
- 17 port I/O; all are 5 V tolerant
- Hardware SMBus™ (I2C™ compatible), SPI™, and
-
UART serial ports available concurrently
Programmable 16-bit counter/timer array with three
capture/compare modules, WDT
4 general-purpose 16-bit counter/timers
Real-time clock mode using PCA or timer and external clock source
Clock Sources
- Two internal oscillators:
- 24.5 MHz, 2% accuracy supports UART operation
- 80 kHz low frequency, low-power
- External oscillator: Crystal, RC, C, or Clock 
(1 or 2 pin modes)
- Can switch between clock sources on-the-fly
Full Technical Data Sheet
- C8051F330/1/2/3/4/5
instructions in 1 or 2 system clocks
Up to 25 MIPS throughput with 25 MHz clock
Expanded interrupt handler
Port 0
Latch
UART
VDD
Analog/Digital
Power
GND
C2D
Debug HW
Reset
RST/C2CK
POR
XTAL1
XTAL2
BrownOut
External
Oscillator
Circuit
24.5 MHz (2%)
Internal
Oscillator
80kHz
Internal
Oscillator
P
0
Timer 0,
1, 2, 3
System Clock
8
0
5
1
8 kB
FLASH
256 Byte
SRAM
512 Byte
XRAM
C
o SFR Bus
r
e
D
r
v
3-Chnl
PCA/
WDT
X
B
A
R
SMBus
SPI
Port 1
Latch
P
1
D
r
v
10-bit
DAC
IDAC
P0.5/RX
P0.6/CNVST
P0.7
P1.0
P1.1
P1.2
P1.3
P1.4
P1.5
P1.6
P1.7
CP0
+
-
VREF
VDD
VREF
10-bit
200 ksps
ADC
Port 2
Latch
Rev. 1.2 4/14
P0.0/VREF
P0.1/IDAC
P0.2/XTAL1
P0.3/XTAL2
P0.4/TX
Copyright © 2014 by Silicon Laboratories
Temp
A
M
U
X
AIN0-AIN15
C2D
P2.0/C2D
C8051F330-GDI
RAM (Bytes)
SMBus/I2C
UART
Enhanced SPI
Timers (16-bit)
Programmable Counter Array
Digital Port I/Os
10-bit 200 ksps ADC
Temperature Sensor
Analog Comparators
Lead-free (RoHS Compliant)
C8051F330-G1DI 25
8
768
1
1
1
4

17
  
1

C8051F330-GDI
8
768
1
1
1
4

17
  
1

2
25
*Note: 512 bytes reserved for factory use.
Rev. 1.2
Wafer Thickness
Internal Voltage Reference
MIPS (Peak)
Flash Memory (kB)*
Ordering Part Number
C8051F330-GDI
1. Ordering Information
Table 1.1. Product Selection Guide
28.5433 mil /
725 µm
(No backgrind)
12 mil
(backgrind)
C8051F330-GDI
2. Pin Definitions
Table 2.1. Pin Definitions for the C8051F330-GDI *
Name
Physical
Pad
Number
VDD
4,5
Power Supply Voltage.
GND
2,3
Ground.
RST/
6
C2CK
P2.0/
7
C2D
P0.0/
1
VREF
P0.1
26
XTAL1
P0.3/
Device Reset. Open-drain output of internal POR or VDD monitor.
An external source can initiate a system reset by driving this pin
low for at least 10 µs.
D I/O
Clock signal for the C2 Debug Interface.
D I/O
Port 2.0.
D I/O
Bi-directional data signal for the C2 Debug Interface.
D I/O or
A In
D I/O or
A In
AOut
25
D I/O or
A In
A In
24
XTAL2
Description
D I/O
A In
IDA0
P0.2/
Type
Port 0.0.
External VREF input.
Port 0.1.
IDA0 Output.
Port 0.2.
External Clock Input. This pin is the external oscillator return for a
crystal or resonator.
D I/O or
A In
Port 0.3.
A I/O or
D In
External Clock Output. For an external crystal or resonator, this pin
is the excitation driver. This pin is the external clock input for
CMOS, capacitor, or RC oscillator configurations.
P0.4
23
D I/O or
A In
Port 0.4.
P0.5
22
D I/O or
A In
Port 0.5.
*Note: For a complete description of the functionality of all pins, refer to the C8051F330/1/2/3/4/5 technical data
sheet.
Rev. 1.2
3
C8051F330-GDI
Table 2.1. Pin Definitions for the C8051F330-GDI (Continued)*
Name
Physical
Pad
Number
P0.6/
21
CNVSTR
Type
D I/O or
A In
D In
Description
Port 0.6.
ADC0 External Convert Start or IDA0 Update Source Input.
P0.7
20
D I/O or
A In
Port 0.7.
P1.0
18
D I/O or
A In
Port 1.0.
P1.1
16
D I/O or
A In
Port 1.1.
P1.2
15
D I/O or
A In
Port 1.2.
P1.3
14
D I/O or
A In
Port 1.3.
P1.4
11
D I/O or
A In
Port 1.4.
P1.5
10
D I/O or
A In
Port 1.5.
P1.6
9
D I/O or
A In
Port 1.6.
P1.7
8
D I/O or
A In
Port 1.7.
*Note: For a complete description of the functionality of all pins, refer to the C8051F330/1/2/3/4/5 technical data
sheet.
4
Rev. 1.2
C8051F330-GDI
3. Bonding Instructions
Table 3.1. C8051F330-GDI Pad Connections
Physical Pad
Number
Package Pin
Number (20-QFN)
Package Pin
Name
Physical Pad X
(µm)
Physical Pad Y
(µm)
1
P0.0
1
–802.7
964.7
2
GND
2
–964.7
–61.2
3
GND
2
–964.7
–173.2
4
VDD
3
–964.7
–284.1
5
VDD
3
–964.7
–396.1
6
/RST/C2CK
4
–964.7
–587.7
7
P2.0/C2D
5
–964.7
–797.7
8
P1.7
6
–797.7
–964.7
9
P1.6
7
–627.7
–964.7
10
P1.5
8
–447.7
–964.7
11
P1.4
9
240.7
–964.7
12
Reserved*
—
396.7
–964.7
13
Reserved*
—
471.7
–964.7
14
P1.3
10
627.7
–964.7
15
P1.2
11
797.7
–964.7
16
P1.1
12
964.7
–797.7
17
Reserved*
—
964.7
70.05
18
P1.0
13
964.7
201.05
19
Reserved*
—
964.7
337.05
20
P0.7
14
964.7
627.7
21
P0.6
15
964.7
797.7
22
P0.5
16
797.7
964.7
23
P0.4
17
627.7
964.7
24
P0.3
18
447.7
964.7
25
P0.2
19
–79.9
964.7
26
P0.1
20
–622.7
964.7
*Note: Pins marked “Reserved” should not be connected.
Rev. 1.2
5
C8051F330-GDI
Figure 3.1. Example Die Bonding (QFN-20)
6
Rev. 1.2
C8051F330-GDI
Table 3.2. Wafer and Die Information
C8051F330
Wafer ID
8 in
Wafer Dimensions
2.13 mm x 2.13 mm
Die Dimensions
Wafer Thickness (no backgrind)
Wafer Thickness (with backgrind)
28.54 mil ±1 mil
(725 µm)
12 mil ±1 mil
Wafer Identification
Notch
Scribe Line Width
80 µm
Contact Sales for info
Die Per Wafer*
Passivation
Standard
Wafer Packaging Detail
Wafer Jar
Bond Pad Dimensions
60 µm x 60 µm
Maximum Processing Temperature
250 °C
Electronic Die Map Format
.txt
Bond Pad Pitch Minimum
75 µm
*Note: This is the Expected Known Good Die yielded per wafer and represents
the batch order quantity (one wafer).
Rev. 1.2
7
C8051F330-GDI
4. Wafer Storage Guidelines
It is necessary to conform to appropriate wafer storage practices to avoid product degradation or contamination.

Wafers may be stored for up to 18 months in the original packaging supplied by Silicon Labs.
Wafers must be stored at a temperature of 18–24 °C.
 Wafers must be stored in a humidity-controlled environment with a relative humidity of <30%.
 Wafers should be stored in a clean, dry, inert atmosphere (e.g. nitrogen or clean, dry air).

8
Rev. 1.2
C8051F330-GDI
5. Failure Analysis (FA) Guidelines
Certain conditions must be met for Silicon Laboratories to perform Failure Analysis on devices sold in
wafer form.
In
order to conduct failure analysis on a device in a customer-provided package, Silicon
Laboratories must be provided with die assembled in an industry standard package that is pin
compatible with existing packages Silicon Laboratories offers for the device. Initial response time
for FA requests that meet this requirements will follow the standard FA guidelines for packaged
parts.
If retest of the entire wafer is requested, Silicon Laboratories must be provided with the whole
wafer. Silicon Laboratories cannot retest any wafers that have been sawed, diced, backgrind or
are on tape. Initial response time for FA requests that meet this requirements will be 3 weeks.
Rev. 1.2
9
C8051F330-GDI
DOCUMENT CHANGE LIST
Revision 1.0 to Revision 1.1

Changed Wafer Packaging Detail to “Wafer Jar” 
in Table 3.2 on page 7.
Revision 1.1 to Revision 1.2

Updated Table 1.1, “Product Selection Guide,” on page 2.
Updated Table 3.2, “Wafer and Die Information,” on page 7.
 Added “5. Failure Analysis (FA) Guidelines” on page 9.

10
Rev. 1.2
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Disclaimer
Silicon Laboratories intends to provide customers with the latest, accurate, and in-depth documentation of all peripherals and modules available for system and software implementers
using or intending to use the Silicon Laboratories products. Characterization data, available modules and peripherals, memory sizes and memory addresses refer to each specific
device, and "Typical" parameters provided can and do vary in different applications. Application examples described herein are for illustrative purposes only. Silicon Laboratories
reserves the right to make changes without further notice and limitation to product information, specifications, and descriptions herein, and does not give warranties as to the accuracy
or completeness of the included information. Silicon Laboratories shall have no liability for the consequences of use of the information supplied herein. This document does not imply
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