LITTELFUSE S402ES

Teccor® brand Thyristors
Silicon Controlled Rectifiers
Sx02xS EV Series 1.5 Amp Sensitive SCR
Description
New 1.5Amp sensitive gate SCR series offers high static
dv/dt with low turn off time (tq) through small die planar
construction design. All SCR’s junctions are glasspassivated to ensure long term reliability and parametric
stability.
Features
Main Features
Symbol
IT(RMS)
VDRM / VRRM
IGT
Value
Unit
1.5
A
400 to 600
V
200
μA
t3P)4DPNQMJBOU
t)JHIEWEUOPJTFJNNVOJUZ
t5ISVIPMFBOETVSGBDF
mount packages
t*NQSPWFEUVSOPGG
time (tq) < 35 μsec.
t4VSHF
capability > 15Amps
t4FOTJUJWFHBUFGPSEJSFDU
microprocessor interface
t#MPDLJOHWPMUBHF
(VDRM / VRRM )
capability — up to 600V
Schematic Symbol
A
Applications
The Sx02xS EV series is specifically designed for Gas
Ignition applications that require high pulse surge current
capability.
G
K
Absolute Maximum Ratings
Symbol
Parameter
IT(RMS)
RMS on-state current
(full sine wave)
IT(AV)
Average on-state current
ITSM
Non repetitive surge peak on-state current
(Single cycle, TJ initial = 25°C)
I2t
I2t Value for fusing
di/dt
IGM
PG(AV)
Tstg
TJ
TO-92
TC = 65°C
SOT-223
TL = 95°C
TO-92
TC = 65°C
SOT-223
TC = 95°C
Value
Unit
1.5
A
0.95
A
F = 50 Hz
12.5
F = 60 Hz
15.0
tp = 10 ms
F = 50 Hz
0.78
tp = 8.3 ms
F = 60 Hz
0.93
Critical rate of rise of on-state current IG = 10mA
TO-92
SOT-223
TJ = 125°C
50
A/μs
Peak gate current
tp = 10 μs
TJ = 125°C
1.0
A
TJ = 125°C
0.1
W
TO-92
SOT-223
Average gate power dissipation
A
A2s
Storage junction temperature range
-40 to 150
Operating junction temperature range
-40 to 125
°C
Sx02xS EV Series 1.5 Amp Sensitive SCRs
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©2008 Littelfuse
Teccor® brand Thyristors
Silicon Controlled Rectifiers
Electrical Characteristics (TJ = 25°C, unless otherwise specified)
Symbol
Description
Test Conditions
Sx02xS
Unit
Min
Max
15
200
μA
—
0.8
V
IGT
DC Gate Trigger Current
VGT
DC Gate Trigger Voltage
VD = 12V
RL = 60 Ω
Peak Reverse Gate Voltage
IRG = 10μA
5
—
V
Holding Current
RGK = 1 kΩ
—
5
mA
Critical Rate-of-Rise of
Off-State Voltage
TJ = 125°C
VD = VDRM / VRRM
Exponential Waveform
RGK = 1 kΩ
25
—
V/μs
tq
Turn-Off Time
TJ = 125°C @ 600 V
RGK = 1 kΩ
—
35
μs
tgt
Turn-On Time
IG = 10mA
PW = 15μsec
IT = 3.0A (pk)
—
3
μs
VGRM
IH
(dv/dt)s
Static Characteristics (TJ = 25°C, unless otherwise specified)
Symbol
VTM
IDRM
Description
Test Conditions
Peak On-State Voltage
Off-State Current, Peak Repetitive
Value
Unit
Min
Max
ITM = 3.0A (pk)
—
1.70
V
TJ = 25°C @ VD= VDRM
RGK = 1 kΩ
—
5
μA
TJ = 125°C @ VD= VDRM
RGK = 1 kΩ
—
500
μA
Thermal Resistances
Symbol
1
Description
Rth(j-c)
Junction to case (AC)
Rth(j-a)
Junction to ambient
Test Conditions
IT = 1.5A (RMS)1
Value
TO-92
50
SOT-223
25
TO-92
160
SOT-223
60
Unit
°C/W
IT = 1.5A (RMS)1
°C/W
60Hz AC resistive load condition, 100% conduction.
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©2008 Littelfuse
191
Power Thyristor Databook
Sx02xS EV Series 1.5 Amp Sensitive SCRs
Teccor® brand Thyristors
Silicon Controlled Rectifiers
Figure 1: Normalized DC Gate Trigger Current
vs. Junction Temperature
Figure 2: Normalized DC Holding Current
vs. Junction Temperature
2.5
2.0
Normalized Gate: Trigger Current
IGT @ Tj / IGT@ 25ºC
2.0
1.5
1.0
1.5
1.0
0.5
0.5
0.0
-40
0.0
-40
-25
-10
+5
+20
+35
+50
+65
+80
-25
-10
+5
+20
+35
+50
+65
+80
+95
+110
+125
+95 +110 +125
Junction Temperature (TJ) °C
Figure 3: Normalized DC Gate Trigger Voltage
vs. Junction Temperature
Figure 4: Power Dissipation (Typical)
vs. RMS On-State Current
1.5
Average Power Dissipation, PD (Watts)
Normalized Gate: Trigger Voltage
(VGT @ Tj / VGT @ 25ºC)
1.5
1.0
0.5
-40
-25
-10
+5
+20
+35
+50
+65
+80
CURRENT WAVEFORM: Sinusoidal
LOAD: Resistive or Inductive
CONDUCTION ANGLE: 180o
1.0
0.5
0.0
+95 +110 +125
0.0
Junction Temperature (TJ) °C
0.5
1.0
1.5
RMS On-state Current [I T (RMS) ] (Amps)
Figure 5: Maximum Allowable Case Temperature
vs. On-State Current
Max Allowable Case Temperature, T C (Celsius)
130
120
SOT-223
110
100
TO-92
90
80
CURRENT WAVEFORM: Sinusoidal
LOAD: Resistive or Inductive
CONDUCTION ANGLE: 180o
CASE TEMPERATURE: Measured as
shown on dimensional drawings
70
60
50
0.0
0.5
1.0
1.5
RMS On-state Current [IT (RMS)] (Amps)
Sx02xS EV Series 1.5 Amp Sensitive SCRs
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©2008 Littelfuse
Teccor® brand Thyristors
Silicon Controlled Rectifiers
Peak Surge (Non-repetitive) On-State Current
(ITSM ) – Amps.
Figure 6: Surge Peak On-State Current vs. Number of Cycles
Supply Frequency: 60Hz Sinusoidal
Load: Resistive
RMS On-State Current [IT(RMS)]: Max Rated Value at
Specific Case Temperature
20
15
12
10
9
8
7
6
5
1.5 A
4
Notes:
1. Gate control may be lost during and immediately
following surge current interval.
2. Overload may not be repeated until junction
temperature has returned to steady-state rated value.
Dev
ices
3
2
1
1
2
3
4
5 6 7 8 9 10
20
30
40
60 80 100
200
300 400 600
1000
Surge Current Duration – Full Cycle
Soldering Parameters
Reflow Condition
Pre Heat
Pb – Free assembly
- Temperature Min (Ts(min))
150°C
- Temperature Max (Ts(max))
200°C
- Time (min to max) (ts)
60 – 180 secs
Average ramp up rate (Liquidus Temp)
(TL) to peak
5°C/second max
TS(max) to TL - Ramp-up Rate
5°C/second max
Reflow
- Temperature (TL) (Liquidus)
- Time (min to max) (ts)
217°C
60 – 150 seconds
Peak Temperature (TP)
260+0/-5 °C
Time within 5°C of actual peak
Temperature (tp)
20 – 40 seconds
Ramp-down Rate
5°C/second max
Time 25°C to peak Temperature (TP)
8 minutes Max.
Do not exceed
280°C
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193
Power Thyristor Databook
Sx02xS EV Series 1.5 Amp Sensitive SCRs
Teccor® brand Thyristors
Silicon Controlled Rectifiers
Physical Specifications
Environmental Specifications
Test
Terminal Finish
100% Matte Tin-plated.
Body
UL recognized epoxy meeting flammability
classification 94V-0.
Lead Material
Specifications and Conditions
AC Blocking
MIL-STD-750, M-1040, Cond A Applied
Peak AC voltage @ 125°C for 1008 hours
Temperature Cycling
MIL-STD-750, M-1051,
100 cycles; -40°C to +150°C; 15-min
dwell-time
Temperature/
Humidity
EIA / JEDEC, JESD22-A101
1008 hours; 320V - DC: 85°C; 85%
rel humidity
High Temp Storage
MIL-STD-750, M-1031,
1008 hours; 150°C
Low-Temp Storage
1008 hours; -40°C
Thermal Shock
MIL-STD-750, M-1056
10 cycles; 0°C to 100°C; 5-min dwelltime at each temperature; 10 sec (max)
transfer time between temperature
Autoclave
EIA / JEDEC, JESD22-A102
168 hours (121°C at 2 ATMs) and
100% R/H
Resistance to
Solder Heat
MIL-STD-750 Method 2031
Solderability
ANSI/J-STD-002, category 3, Test A
Lead Bend
MIL-STD-750, M-2036 Cond E
Copper Alloy
Design Considerations
Careful selection of the correct device for the application’s
operating parameters and environment will go a long way
toward extending the operating life of the thyristor. Good
design practice should limit the maximum continuous
current through the main terminals to 75% of the device
rating. Other ways to ensure long life for a power discrete
semiconductor are proper heat sinking and selection of
voltage ratings for worst case conditions. Overheating,
overvoltage (including dv/dt), and surge currents are
the main killers of semiconductors. Correct mounting,
soldering, and forming of the leads also help protect
against component damage.
Dimensions — TO-92
Inches
Millimeters
Dimensions
Sx02xS EV Series 1.5 Amp Sensitive SCRs
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Power Thyristor Databook
Min
Typ
Max
Min
Typ
Max
A
0.175
—
0.205
4.450
—
5.200
#
0.170
—
0.210
4.320
—
5.330
C
0.500
—
—
12.700
—
—
D
0.135
0.165
—
3.430
4.190
—
E
0.125
—
0.165
3.180
—
4.190
F
0.080
0.095
0.105
2.040
2.400
2.660
G
0.016
—
0.021
0.407
—
0.533
H
0.045
0.050
0.055
1.150
1.270
1.390
I
0.095
0.100
0.105
2.420
2.540
2.660
J
0.015
—
0.020
0.380
—
0.500
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©2008 Littelfuse
Teccor® brand Thyristors
Silicon Controlled Rectifiers
Dimensions – SOT-223
Inches
3.3
(0.130”)
1.5
(0.059”)
1.2
(0.047”)
6.4
(0.252”)
2.3
(0.091”)
Millimeters
Dimensions
Pad Layout for SOT-223
(3x)
1.5
(0.059”)
4.6
(0.181”)
Dimensions in Millimeters (Inches)
Min
Typ
Max
Min
Typ
Max
A
0.248
0.256
0.264
6.30
6.50
6.70
#
0.130
0.138
0.146
3.30
3.50
3.70
C
—
—
0.071
—
—
1.80
D
0.001
—
0.004
0.02
—
0.10
E
0.114
0.118
0.124
2.90
3.00
3.15
F
0.024
0.027
0.034
0.60
0.70
0.85
G
—
0.090
—
—
2.30
—
H
—
0.181
—
—
4.60
—
I
0.264
0.276
0.287
6.70
7.00
7.30
J
0.009
0.010
0.014
0.24
0.26
0.35
10° MAX
K
Product Selector
Voltage
Part Number
Gate Sensitivity
Package
—
200μA
TO-92
—
X
200μA
TO-92
S402TS
X
—
200μA
SOT-223
S602TS
—
X
200μA
SOT-223
400V
600V
S402ES
X
S602ES
Packing Options
Part Number
Marking
Weight
Packing Mode
Base Quantity
Sx02ES
Sx02ES
0.170 g
#VML
2500
Sx02ESAP
Sx02ES
0.170 g
Ammo Pack
2000
Sx02ESRP
Sx02ES
0.170 g
Tape & Reel
2000
Sx02TSRP
Sx02TS
0.120 g
Tape & Reel
1000
Note: x = voltage
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195
Power Thyristor Databook
Sx02xS EV Series 1.5 Amp Sensitive SCRs
Teccor® brand Thyristors
Silicon Controlled Rectifiers
TO-92 (3-lead) Reel Pack (RP) Radial Leaded
Meets all EIA-468-B 1994 Standards
1.6
(41.0)
0.236
(6.0)
0.708
(18.0)
0.02 (0.5)
0.098 (2.5) MAX
1.26
(32.0)
0.354
(9.0)
0.5
(12.7)
MT1 / Cathode
0.1 (2.54)
0.2 (5.08)
MT2 / Anode
Gate
0.157 DIA
(4.0)
14.17(360.0)
Flat up
1.97
(50.0)
Dimensions
are in inches
(and millimeters).
Direction of Feed
TO-92 (3-lead) Ammo Pack (AP) Radial Leaded
Meets all EIA-468-B 1994 Standards
0.236
(6.0)
1.62
(41.2)
0.708
(18.0)
0.02 (0.5)
0.098 (2.5) MAX
1.27
(32.2)
0.354
(9.0)
0.5
(12.7)
0.1 (2.54)
MT2 / Anode
0.2 (5.08)
0.157
(4.0) DIA
MT1 / Cathode
Gate
Flat down
n of Feed
Directio
25 Devices per fold
1.85
(47.0)
12.2
(310.0)
1.85
(47.0)
Dimensions
are in inches
(and millimeters).
13.3
(338.0)
Sx02xS EV Series 1.5 Amp Sensitive SCRs
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Teccor® brand Thyristors
Silicon Controlled Rectifiers
Tape & Reel Specifications for SOT-223
8 mm
4 mm
1.5 mm
2 mm
A / MT2
1.75 mm
5.5 mm
12 mm
K / MT1
A / MT2
GATE
180 mm
13 mm Abor
Hole Diameter
13.4 mm
Part Marking System
Part Numbering System
S x 02 x xx xx
DC
SCR SERIES
PACKING TYPE
Blank: Bulk
RP: Reel Pack (TO-92)
: Embossed Carrier Pack
(SOT-223)
AP: Ammo Pack (TO-92)
VOLTAGE
4: 400V
6: 600V
CURRENT
02: 1.5A
Date Code
(2 Digits Min.)
Number = Year
Letter = Month
SENSITIVITY
S: 200μA Sensitive SCR
PACKAGE TYPE
E: TO-92
T: SOT-223
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197
Power Thyristor Databook
Sx02xS EV Series 1.5 Amp Sensitive SCRs