Switching Diodes MA2C165, MA2C166, MA2C167 Silicon epitaxial planar type Unit : mm For switching circuits φ 0.45 max. • Short reverse recovery time trr COLORED BAND INDICATES CATHODE 1 0.2 max. • Small terminal capacitance, Ct Symbol Rating Unit VR 35 V (DC) MA2C166 50 MA2C167 75 Repetitive peak reverse voltage MA2C165 35 VRRM MA2C166 50 MA2C167 75 V 13 min. MA2C165 0.2 max. Parameter 2.2 ± 0.3 ■ Absolute Maximum Ratings Ta = 25°C Reverse voltage 13 min. ■ Features 2 φ 1.75 max. Average forward current IF(AV) 100 mA Repetitive peak forward current IFRM 225 mA Non-repetitive peak forward surge current* IFSM 500 mA Junction temperature Tj 200 °C Storage temperature Tstg −55 to +200 °C 1 : Cathode 2 : Anode JEDEC : DO-34 Note) * : t = 1 s ■ Electrical Characteristics Ta = 25°C Parameter Reverse current (DC) Symbol MA2C165 IR MA2C166 MA2C167 Conditions Min Max Unit VR = 15 V 0.025 µA VR = 30 V 0.1 VR = 15 V 0.025 VR = 50 V 5 VR = 20 V Typ 0.012 VR = 75 V 5 MA2C165 VR = 35 V, Ta = 150°C 100 MA2C166 VR = 50 V, Ta = 150°C 100 MA2C167 Forward voltage (DC) Reverse voltage (DC) 0.025 MA2C165 Terminal capacitance Reverse recovery time* MA2C165 VR = 75 V, Ta = 150°C VF IF = 100 mA VR IR = 5 µA Ct VR = 0 V, f = 1 MHz trr IF = 10 mA, VR = 1 V, MA2C166/167 50 100 0.95 1.2 V 0.9 2 pF 10 ns 35 Irr = 0.1 · IR, RL = 100 Ω Note) 1. Rated input/output frequency: 100 MHz (MA2C165), 250 MHz (MA2C167), 1 000 MHz (MA2C166) V 2.2 4 2. * : trr measuring circuit ■ Cathode Indication Type No. Color MA2C165 MA2C166 White Green MA2C167 Violet 1 MA2C165, MA2C166, MA2C167 Switching Diodes IF V F 103 Input Pulse tp tr Output Pulse t 10% A Pulse Generator (PG-10N) Rs = 50 Ω t Irr = 0.1 · IR IF = 10 mA VR = 1 V RL = 100 Ω tp = 2 µs tr = 0.35 ns δ = 0.05 W.F.Analyzer (SAS-8130) Ri = 50 Ω trr IF 90% VR 102 Forward current IF (mA) Bias Application Unit N-50BU trr measuring circuit 10 Ta = 150°C 1 75°C 25°C − 20°C 10−1 10−2 0 0.2 0.4 0.6 0.8 1.0 1.2 Forward voltage VF (V) IR Ta VR = 35 V 10−1 0.8 Forward voltage VF (V) Reverse current IR (µA) 1 1 10−1 10−2 10−2 10−3 0 40 80 120 160 200 40 MA2C165 Reverse current IR (µA) Reverse current IR (µA) 100°C 1 10−1 25°C 120 20 160 0 −40 200 0 40 30 200 f = 1 MHz Ta = 25°C Ta = 150°C 100°C 10−1 25°C 1.6 40 60 Reverse voltage VR (V) 80 MA2C165 1.2 MA2C166, MA2C167 0.8 0.4 0 20 160 Ct VR MA2C166 MA2C167 0 120 2.0 10−2 40 80 Ambient temperature Ta (°C) 1 10−3 10 Reverse voltage VR (V) 2 80 10 10 0 0.1 mA IR V R 102 Ta = 150°C 10−3 1 mA Ambient temperature Ta (°C) IR VR 10−2 10 mA 0.4 0.01 mA 0 Ambient temperature Ta (°C) 102 IF = 20 mA 0.6 0.2 Terminal capacitance Ct (pF) 10−3 VR = 75 V 50 V 20 V 10 15 V VF Ta 1.0 MA2C166 MA2C167 MA2C165 10 Reverse current IR (µA) IR T a 102 102 0 4 8 12 16 Reverse voltage VR (V) 20