PANASONIC MA3V175D

Switching Diodes
MA3V175D, MA3V176D
Silicon epitaxial planar type
Unit : mm
4.0 ± 0.2
3.0 ± 0.2
For switching circuits
■ Features
15.6 ± 0.5
• Short reverse recovery time trr
• Small terminal capacitance, Ct
MA3V175D
Peak reverse
voltage
MA3V175D
Forward current
(DC)
Single
Peak forward
current
Single
Unit
marking
VR
40
V
1
MA3V176D
+ 0.2
Rating
2
3
2.0 ± 0.2
Reverse voltage
(DC)
Symbol
0.45 − 0.1
Parameter
0.7 ± 0.1
■ Absolute Maximum Ratings Ta = 25°C
80
VRM
40
MA3V176D
V
1.27 1.27
2.54 ± 0.15
1 : Cathode
2 : Anode
3 : Cathode
New S-Type Package
80
IF
100
Double
mA
150
IFM
225
Double
mA
Internal Connection
340
Non-repetitive peak Single
forward surge current* Double
IFSM
500
mA
750
Junction temperature
Tj
150
°C
Storage temperature
Tstg
−55 to +150
°C
1
2
3
Note) * : t = 1 s
■ Electrical Characteristics Ta = 25°C
Parameter
Reverse current (DC)
Symbol
MA3V175D
IR
MA3V176D
Forward voltage (DC)
Reverse voltage (DC)
MA3V175D
Conditions
Min
Max
Unit
VR = 35 V
0.1
µA
VR = 75 V
0.1
VF
IF = 100 mA
VR
IR = 100 µA
1.2
Ct
VR = 0 V, f = 1 MHz
4
pF
trr
IF = 10 mA, VR = 6 V
Irr = 0.1 · IR, RL = 100 Ω
10
ns
40
MA3V176D
Terminal capacitance
Reverse recovery
time*
Typ
V
V
80
Note) 1. Rated input/output frequency: 100 MHz
2. * : trr measuring circuit
Input Pulse
DUT
tr
IF
Rs = 50 Ω
V = VR + IR·RS
Sampling
Oscilloscope
Ri = 50 Ω
Output Pulse
trr
tP
10%
90%
tp = 100 ns
tr = 0.6 ns
δ = 0.05
0
IF
t
Irr = 0.1·IR
IF = 10 mA
VR = 6 V
RL = 100 Ω
1
MA3V175D, MA3V176D
Switching Diodes
1
10
Ta = 125°C
75°C
25°C
− 20°C
10−1
10
MA3V175D
MA3V176D
Ta = 125°C
1
Ta = 125°C
Reverse current IR (µA)
102
1
IR  V R
IR  V R
10
Reverse current IR (µA)
Forward current IF (mA)
IF  V F
103
10−1
75°C
10−2
10−3
10−1
75°C
10−2
10−3
25°C
25°C
0
0.2
0.4
0.6
0.8
1.0
10−4
1.2
0
10
Forward voltage VF (V)
20
VF  Ta
0.8
IF = 10 mA
0.6
3 mA
1 mA
0.4
0.1 mA
Reverse current IR (µA)
Forward voltage VF (V)
10−4
60
−40
40
80
120
160
Ambient temperature Ta (°C)
Ct  VR
10
8
6
f = 1 MHz
Ta = 25°C
4
2
1
0.8
0.6
0.4
0.2
0
4
40
8 12 16 20 24 28 32 36 40
Reverse voltage VR (V)
60
80
100
120
IR  T a
MA3V176D
1
VR = 40 V
10−1
20 V
10−2
10−4
0
20
10
MA3V175D
10−3
0
0
Reverse voltage VR (V)
1
0.2
Terminal capacitance Ct (pF)
50
IR  T a
10
1.0
2
40
Reverse voltage VR (V)
1.2
10
30
Reverse current IR (µA)
10−2
VR = 80 V
40 V
10−1
10−2
10−3
−40
0
40
80
120
160
Ambient temperature Ta (°C)
10−4
−40
0
40
80
120
160
Ambient temperature Ta (°C)