General Purpose Transistor MMBT4401-G (NPN) RoHS Device Features SOT-23 -Switching Transistor 0.118(3.00) 0.110(2.80) 3 Circuit Diagram 0.055(1.40) 0.047(1.20) 1 2 0.079(2.00) 0.071(1.80) Collector 3 0.006(0.15) 0.003(0.08) 0.041(1.05) 0.035(0.90) 1 Base 2 Emitter 0.100(2.55) 0.089(2.25) 0.004(0.10) max 0.020(0.50) 0.012(0.30) 0.020(0.50) 0.012(0.30) Dimensions in inches and (millimeter) Maximum Ratings (at Ta=25°C unless otherwise noted) Symbol Value Units Collector-Base voltage VCBO 60 V Collector-Emitter voltage VCEO 40 V Emitter-Base voltage VEBO 6 V Collector current IC 600 mA Collector power dissipation PC 300 mW RθJA 417 °C/W TJ 150 °C TSTG -55 to +150 °C Parameter Thermal resistance, junction to ambient Junction temperature Storage temperature range Company reserves the right to improve product design , functions and reliability without notice. REV:B QW-BTR32 Page 1 General Purpose Transistor Electrical Characteristics (@TA=25°C unless otherwise noted) Parameter Symbol Conditions Min. Max. Units Collector-Base breakdown voltage V(BR)CBO IC=100μA, IE=0 60 V Collector-Emitter breakdown voltage V(BR)CEO IC=1mA, IB=0 40 V Emitter-Base breakdown voltage V(BR)EBO IE=100μA, IC=0 6 V Collector cut-off current ICEO VCE=30V, IB=0 100 nA Collector cut-off current ICBO VCB=50V, IE=0 100 nA Base cut-off current IEBO VEB=5V, IC=0 100 nA DC current gain hFE VCE=1V, IC=150mA 100 300 Collector-Emitter saturation voltage VCE(sat) IC=150mA, IB=15mA 0.4 V Base-Emitter saturation voltage VBE(sat) IC=150mA, IB=15mA 0.95 V Transition frequency fT Delay time td Rise time tr Storage time tS Fall time tf VCE=10V, IC=20mA f=100MHz VCC=30V, VBE(off)=-2V, IC=150mA, IB1=15mA VCC=30V, IC=150mA IB1=IB2=15mA 250 MHz 15 nS 20 nS 225 nS 30 nS Company reserves the right to improve product design , functions and reliability without notice. REV:B QW-BTR32 Page 2 General Purpose Transistor RATING AND CHARACTERISTIC CURVES (MMBT4401-G) Fig.2 - hFE — IC Fig.1 - Static Characteristic 250 1000 COMMON EMITTER VCE = 1V 1mA 200 0.9mA DC Current Gain, hFE Collector Current, IC (mA) COMMON EMITTER Ta=25°C 0.8mA 0.7mA 150 0.6mA 0.5mA 100 0.4mA 0.3mA 50 Ta=100°C Ta=25°C 100 0.2mA IB=0.1mA 0 10 0 1 2 3 4 100 600 Collector-Emitter Voltage, VCE (V) Collector Current, Ic (mA) Fig.3 - VCEsat — IC Fig.4 - VBEsat — IC 1000 1000 β = 10 β = 10 Base - Emitter Saturation Voltage, VBEsat (mV) Collector - Emitter Saturation Voltage, VCEsat (mV) 10 1 Ta=100°C 100 Ta= 25°C 10 0.1 1 10 100 Collector Current, Ic (mA) 600 800 Ta= 25°C 600 Ta=100°C 400 200 0 0.1 1 10 100 600 Collector Current, Ic (mA) Company reserves the right to improve product design , functions and reliability without notice. REV:B QW-BTR32 Page 3 General Purpose Transistor RATING AND CHARACTERISTIC CURVES (MMBT4401-G) Fig.5 - IC — VBE Fig.6 - FT — IC 600 500 Transtion frequency, fT (MHZ) Collector Current, Ic (mA) COMMON EMITTER VCE = 1V 100 Ta=100°C 10 Ta= 25°C 1 0.1 0.0 COMMON EMITTER VCE=10V TA=25°C 100 10 0.2 0.4 0.6 0.8 1.0 1.2 0 10 Base - Emmiter Voltage, VBE (mV) Fig.8 - PC — Ta 400 f=1MHZ IE=0/IC=0 Ta=25°C Cib 10 Cob Collector Power Dissipation, Pc (mW) 100 Capacitance, C (pF) 40 Collector Current, IC (mA) Fig.7 - Cob/Cib — VCB/VEB 0 0.1 30 20 300 200 100 0 1 Reverse Voltge, V (V) 10 20 30 0 25 50 75 100 125 150 Ambient Temperature, Ta (°C) Company reserves the right to improve product design , functions and reliability without notice. REV:B QW-BTR32 Page 4 General Purpose Transistor Reel Taping Specification P1 d T F E P0 B W C A P 12 o 0 D2 D1 D W1 SOT-23 SOT-23 SYMBOL A B C d D D1 D2 (mm) 3.15 ± 0.10 2.77 ± 0.10 1.22 ± 0.10 Φ1.50 ± 0.10 178 ± 2.00 54.40 ± 1.00 13.00 ± 1.00 (inch) 0.124 ± 0.004 0.109 ± 0.004 0.048 ± 0.004 Φ0.059 ± 0.004 7.008 ± 0.079 2.142 ± 0.039 0.512 ± 0.039 SYMBOL E F P P0 P1 W W1 (mm) 1.75 ± 0.10 3.50 ± 0.10 4.00 ± 0.10 4.00 ± 0.10 2.00 ± 0.10 8.00 + 0.30 /–0.10 12.30 ± 1.00 (inch) 0.069 ± 0.004 0.138 ± 0.004 0.157 ± 0.004 0.157 ± 0.004 0.079 ± 0.004 0.315 + 0.012 /–0.004 0.484 ± 0.039 Company reserves the right to improve product design , functions and reliability without notice. QW-BTR32 REV:B Page 5 General Purpose Transistor Marking Code 3 Part Number Marking Code MMBT4401-G 2X XX 1 2 xx = Product type marking code Suggested PAD Layout SOT-23 SIZE (mm) (inch) A 0.80 0.031 B 1.90 0.075 C 2.02 0.080 D 2.82 0.111 A C D B Standard Packaging REEL PACK Case Type SOT-23 REEL Reel Size ( pcs ) (inch) 3,000 7 Company reserves the right to improve product design , functions and reliability without notice. QW-BTR32 REV:B Page 6