Small Signal Transistor MMBT2222A-G (NPN) RoHS Device Features SOT-23 -NPN silicon epitaxial planar transistor for switching and amplifier application. 0.118(3.00) 0.110(2.80) 3 Mechanical data 0.055(1.40) 0.047(1.20) -Case: SOT-23, molded plastic. 1 2 0.079(2.00) 0.071(1.80) -Terminals: solderable per MIL-STD-750, method 2026. 0.006(0.15) 0.003(0.08) -Approx. weight: 0.008 grams 0.041(1.05) 0.035(0.90) 0.100(2.55) 0.089(2.25) Diagram: 0.004(0.10) max Collector 3 0.020(0.50) 0.012(0.30) 1 Base 0.020(0.50) 0.012(0.30) Dimensions in inches and (millimeter) 2 Emitter Maximum Ratings (at Ta=25°C unless otherwise noted) Symbol Value Units Collector-Base voltage VCBO 75 V Collector-Emitter voltage VCEO 40 V Emitter-Base voltage VEBO 6.0 V Collector current-continuous IC 600 mA Power dissipation PC 300 mW RθJA 417 °C/W TJ 150 °C TSTG -55 to +150 °C Parameter Thermal resistance, junction to ambient Junction temperature Storage temperature range Company reserves the right to improve product design , functions and reliability without notice. REV:B Page 1 QW-BTR30 Comchip Technology CO., LTD. Small Signal Transistor Electrical Characteristics (@TA=25°C unless otherwise noted) Parameter Symbol Conditions Min. Max. Units Collector-Base breakdown voltage V(BR)CBO IC=10μA, IE=0 75 V Collector-Emitter breakdown voltage V(BR)CEO IC=10mA, IB=0 40 V Emitter-Base breakdown voltage V(BR)EBO IE=10μA, IC=0 6 V Collector cut-off current ICBO VCB=60V, IE=0 0.01 μA Collector cut-off current ICEO VCE=30V, VBE(off)=3V 0.01 μA Emitter cut-off current IEBO VEB=3V, IC=0 0.1 μA hFE(1) VCE=10V, IC=150mA 100 hFE(2) VCE=10V, IC=0.1mA 40 hFE(3) VCE=10V, IC=500mA 42 Collector-Emitter saturation voltage VCE(sat) IC=150mA, IB=15mA IC=500mA, IB=50mA 0.3 1 V Base-Emitter saturation voltage VBE(sat) IC=150mA, IB=15mA IC=500mA, IB=50mA 1.2 2.0 V Transition frequency fT VCE=20V, IC=20mA f=100MHz Delay time (see fig.1) td Rise time (see fig.1) tr Storage time (see fig.2) ts Fall time (see fig.2) tf DC current gain VCC=30V, VBE(off)=-0.5V IC=150mA, IB1=15mA VCC=30V, IC=150mA IB1=-IB2=15mA 300 300 MHz 10 nS 25 nS 225 nS 60 nS Notes: 1. Pulse test: Pulse Width ≤300μs, Duty Cycle ≤ 2.0%. Company reserves the right to improve product design , functions and reliability without notice. REV:B Page 2 QW-BTR30 Comchip Technology CO., LTD. Small Signal Transistor RATING AND CHARACTERISTIC CURVES (MMBT2222A-G) Fig.2 - hFE — IC Fig.1 - Static Characteristic 0.25 500 1mA COMMON EMITTER VCE=10V 0.9mA 0.20 400 0.8mA DC Current Gain, hFE Collector Current, IC (mA) COMMON EMITTER Ta=25°C 0.7mA 0.15 0.6mA 0.5mA 0.10 0.4mA 0.3mA 0.05 Ta=100°C 300 200 Ta=25°C 100 0.2mA IB=0.1mA 0.00 0 6 4 2 8 10 0 0.1 12 100 10 Collector-Emitter Voltage, VCE (V) Collector Current, Ic (mA) Fig.3 - VCEsat — IC Fig.4 - VBEsat — IC β = 10 β = 10 Base - Emitter Saturation Voltage, VBEsat (V) 0.4 0.3 0.2 0.1 Ta= 25°C 0.8 Ta=100°C 0.4 0.0 0.0 10 1 100 600 1 10 100 Collector Current, Ic (mA) Fig.5 - IC — VBE Fig.7 - Cob/Cib — VCB/VEB 100 COMMON EMITTER VCE=10V f=1MHZ IE=0/IC=0 Ta=25°C Capacitance, C (pF) 100 Ta=100°C 10 Ta= 25°C 1 0.1 0.0 600 Collector Current, Ic (mA) 600 Collector Current, Ic (mA) 600 1.2 0.5 Collector -Emitter Saturation Voltage, VCEsat (V) 1 0.2 0.4 0.6 0.8 1.0 Cib 10 Cob 0 0.1 Base - Emmiter Voltage, VBE (V) 1 10 20 Reverse Voltge, V (V) REV:B Page 3 QW-BTR30 Comchip Technology CO., LTD. Small Signal Transistor RATING AND CHARACTERISTIC CURVES (MMBT2222A-G) Fig.7 - FT — IC Fig.8 - PC — Ta 500 Collector Power Dissipation, Pc (mW) 400 Transtion frequency, fT (MHZ) COMMON EMITTER VCE=20V f=200MHz TA=25°C 300 200 100 0 100 10 80 0 Collector Current, IC (mA) 25 50 75 100 125 150 Ambient Temperature, Ta (°C) REV:B Page 4 QW-BTR30 Comchip Technology CO., LTD. Small Signal Transistor Reel Taping Specification P1 d T F E P0 B W C A P 12 o 0 D2 D1 D W1 SOT-23 SOT-23 SYMBOL A B C d D D1 D2 (mm) 3.15 ± 0.10 2.77 ± 0.10 1.22 ± 0.10 Φ1.50 ± 0.10 178 ± 2.00 54.40 ± 1.00 13.00 ± 1.00 (inch) 0.124 ± 0.004 0.109 ± 0.004 0.048 ± 0.004 Φ0.059 ± 0.004 7.008 ± 0.079 2.142 ± 0.039 0.512 ± 0.039 SYMBOL E F P P0 P1 W W1 (mm) 1.75 ± 0.10 3.50 ± 0.10 4.00 ± 0.10 4.00 ± 0.10 2.00 ± 0.10 8.00 + 0.30 /–0.10 12.30 ± 1.00 (inch) 0.069 ± 0.004 0.138 ± 0.004 0.157 ± 0.004 0.157 ± 0.004 0.079 ± 0.004 0.315 + 0.012 /–0.004 0.484 ± 0.039 REV:B Page 5 QW-BTR30 Comchip Technology CO., LTD. Small Signal Transistor Marking Code 3 Part Number Marking Code MMBT2222A-G 1P XX 1 2 xx = Product type marking code Suggested PAD Layout SOT-23 SIZE (mm) (inch) A 0.80 0.031 B 1.90 0.075 C 2.02 0.080 D 2.82 0.111 A C D B Standard Packaging REEL PACK Case Type SOT-23 REEL Reel Size ( pcs ) (inch) 3,000 7 REV:B Page 6 QW-BTR30 Comchip Technology CO., LTD.