FMMT619-G

General Purpose Transistor
FMMT619-G (NPN)
RoHS Device
Features
SOT-23
-Low Saturation Voltage.
0.118(3.00)
0.110(2.80)
3
0.055(1.40)
0.047(1.20)
Diagram:
1
Collector
3
2
0.079(2.00)
0.071(1.80)
0.006(0.15)
0.003(0.08)
1
Base
0.041(1.05)
0.035(0.90)
0.100(2.55)
0.089(2.25)
2
Emitter
0.004(0.10) max
0.020(0.50)
0.012(0.30)
0.020(0.50)
0.012(0.30)
Dimensions in inches and (millimeter)
Maximum Ratings (at TA=25°C unless otherwise noted)
Symbol
Value
Units
Collector-Base voltage
VCBO
50
V
Collector-Emitter voltage
VCEO
50
V
Emitter-Base voltage
VEBO
5.0
V
Collector current-continuous
IC
2
A
Power dissipation
PC
350
mW
Thermal resistance from junction to ambient
RθJA
357
°C/W
Maximum power dissipation (Note 1)
PCM
625
mW
Thermal resistance from junction to ambient (Note 1)
RθJA
200
°C/W
TJ
150
°C
TSTG
-55 to +150
°C
Parameter
Junction temperature
Storage temperature range
Notes:
1. Maximum power dissipation is calculated assuming that the device is mounted on a ceramic substrate measuring 15*15*0.6mm.
Company reserves the right to improve product design , functions and reliability without notice.
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QW-BTR55
Comchip Technology CO., LTD.
General Purpose Transistor
Electrical Characteristics (at TA=25°C unless otherwise noted)
Parameter
Symbol
Conditions
Min.
Typ.
Max.
Units
Collector-Base breakdown voltage
V(BR)CBO
IC=100μA, IE=0
50
-
-
V
Collector-Emitter breakdown voltage (Note 1)
V(BR)CEO
IC=10mA, IB=0
50
-
-
V
Emitter-Base breakdown voltage
V(BR)EBO
IE=100μA, IC=0
5
-
-
V
Collector cut-off current
ICBO
VCB=40V, IE=0
-
100
nA
Emitter cut-off current
IEBO
VEB=4V, IC=0
-
-
100
nA
hFE(1)
VCE=2V, IC=10mA
200
-
-
hFE(2)
VCE=2V, IC=0.2A
300
-
-
hFE(3)
VCE=2V, IC=1A
200
-
-
hFE(4)
VCE=2V, IC=2A
100
-
-
hFE(5)
VCE=2V, IC=6A
-
40
-
VCE(sat)1
IC=0.1A, IB=10mA
-
-
20
mV
VCE(sat)2
IC=1A, IB=10mA
-
-
200
mV
VCE(sat)3
IC=2A, IB=100mA
-
-
220
mV
Base-Emitter saturation voltage (Note 1)
VBE(sat)
IC=2A, IB=50mA
-
-
1
V
Base-Emitter on voltage (Note 1)
VBE(on)
IC=2A, VCE=2V
-
-
1
V
VCB=10V, f=1MHz
-
-
20
pF
-
170
-
nS
-
750
-
nS
100
-
-
MHz
DC current gain (Note 1)
Collector-Emitter saturation voltage
(Note 1)
Output capacitance
Cob
Turn-on time
t(on)
Turn-off time
t(off)
Transition frequency
fT
VCC=10V, IC=1A
IB1=-IB2=10mA
VCE=10V, IC=50mA
f=100MHz
Notes:
1. Pulse test: Pulse Width ≤300μs, Duty Cycle ≤ 2.0%.
Company reserves the right to improve product design , functions and reliability without notice.
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QW-BTR55
Comchip Technology CO., LTD.
General Purpose Transistor
RATING AND CHARACTERISTIC CURVES (FMMT619-G)
Fig.2 - hFE — IC
Fig.1 - Static Characteristic
500
1200
VCE=2V
0.5mA
400
1000
0.45mA
DC Current Gain, hFE
Collector Current, IC (mA)
COMMON
EMITTER
Ta=25°C
0.4mA
300
0.35mA
200
0.25mA
0.3mA
0.2mA
Ta=100°C
800
600
Ta=25°C
400
0.15mA
100
200
0.1mA
IB=0.05mA
0
0
0
3
2
1
4
5
6
1
Collector-Emitter Voltage, VCE (V)
Collector Current, Ic (mA)
Fig.3 - VBEsat — IC
Fig.4 - VCEsat — IC
1000
400
β = 40
β = 20
Collector-Emitter Saturation
Voltage, VCEsat (mV)
Base-Emitter Saturation
Voltage, VBEsat (mV)
1000 2000
100
10
800
Ta= 25°C
600
Ta=100°C
400
200
300
200
Ta=100°C
100
Ta= 25°C
0
0
10
1
1000 2000
100
1
100
1000 2000
Collector Current, Ic (mA)
Fig.5 - FT — IC
Fig.6 - Cob/Cib — VCB/VEB
200
1000
f=1MHZ
IE=0/IC=0
Ta=25°C
Cib
150
Capacitance, C (pF)
Transtion frequency, fT (MHZ)
10
Collector Current, Ic (mA)
100
50
100
Cob
10
VCE=10V
Ta= 25°C
0
0
20
40
60
80
100
0
0.1
Collector Current, IC (mA)
1
10
20
Reverse Voltge, V (V)
Company reserves the right to improve product design , functions and reliability without notice.
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QW-BTR55
Comchip Technology CO., LTD.
General Purpose Transistor
RATING AND CHARACTERISTIC CURVES (FMMT619-G)
Fig.7 - VBE — IC
Fig.8 - PC — Ta
500
Collector Power Dissipation, Pc (mW)
2000
Collector Current, Ic (mA)
VCE=2V
1600
1200
Ta=100°C
800
Ta= 25°C
400
0
200
400
300
200
100
0
400
600
800
1000
0
Base - Emitter Voltage, VBE (mV)
25
50
75
100
125
150
Ambient Temperature, Ta (°C)
Company reserves the right to improve product design , functions and reliability without notice.
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QW-BTR55
Comchip Technology CO., LTD.
General Purpose Transistor
Reel Taping Specification
P1
d
T
W
B
F
E
P0
C
A
P
12
o
0
D2
D1
D
W1
SOT-23
SOT-23
SYMBOL
A
B
C
d
D
D1
D2
(mm)
3.15 ± 0.10
2.77 ± 0.10
1.22 ± 0.10
1.50 ± 0.10
178.00 ± 2.00
54.40 ± 1.00
13.00 ± 1.00
(inch)
0.124 ± 0.004
0.109 ± 0.004
0.048 ± 0.004
0.059 ± 0.004
7.087 ± 0.079
2.142 ± 0.039
0.512 ± 0.039
SYMBOL
E
F
P
P0
P1
W
W1
(mm)
1.75 ± 0.10
3.50 ± 0.10
4.00 ± 0.10
4.00 ± 0.10
2.00 ± 0.10
8.00 + 0.30 /–0.10
12.30 ± 1.00
(inch)
0.069 ± 0.004
0.138 ± 0.004
0.157 ± 0.004
0.157 ± 0.004
0.079 ± 0.004
0.315 + 0.012 /–0.004
0.484 ± 0.039
Company reserves the right to improve product design , functions and reliability without notice.
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QW-BTR55
Comchip Technology CO., LTD.
General Purpose Transistor
Marking Code
3
Part Number
Marking Code
FMMT619-G
619
XXX
1
2
xx = Product type marking code
Suggested PAD Layout
B
SOT-23
SIZE
(mm)
(inch)
A
0.80
0.031
B
0.60
0.024
C
1.90
0.075
D
2.02
0.080
A
D
C
Note:
1.General tolerance: ±0.05mm.
2.The pad layout is for reference purposes only.
Standard Packaging
REEL PACK
Case Type
SOT-23
REEL
Reel Size
( pcs )
(inch)
3,000
7
Company reserves the right to improve product design , functions and reliability without notice.
REV: A
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QW-BTR55
Comchip Technology CO., LTD.