General Purpose Transistor MMBT3906M-HF (PNP) RoHS Device Features -Small package. SOT-723 Collector 3 Circuit Diagram 0.011(0.27) 0.007(0.17) 1 Base 1 0.049(1.25) 0.045(1.15) 2 Emitter 0.031(0.8) Typ. Symbol Value Unit Collector-Base voltage VCBO -40 V Collector-Emitter voltage VCEO -40 V Emitter-Base voltage VEBO -5 V Collector current-continuous IC -0.2 A Power dissipation PC 100 mW RθJA 1250 °C/W Thermal resistance from junction to ambient 0.015(0.37) 0.011(0.27) 2 Maximum Ratings (at TA=25°C unless otherwise noted) Parameter 3 Junction temperature TJ 150 °C Storage temperature Tstg -55~+150 °C 0.033(0.85) 0.030(0.75) 0.049(1.25) 0.045(1.15) 0.020(0.50) 0.017(0.43) 0.002(0.05) 0.000(0.00) 0.006(0.15) 0.003(0.08) Dimensions in inches and (millimeter) Electrical Characteristics (at T =25°C unless otherwise noted) A Parameter Symbol Conditions Min Max Unit Collector-Base breakdown voltage V(BR)CBO IC=-10μA, IE=0 -40 - V Collector-Emitter breakdown voltage V(BR)CEO IC=-1mA, IB=0 -40 - V Emitter-Base breakdown voltage V(BR)EBO IE=-10μA, IC=0 -5 - V Collector cut-off current ICBO VCB=-40V, IE=0 - -100 nA Collector cut-off current ICEX VCE=-30V, VEB(off)=-3V - -50 nA Emitter cut-off current IEBO VEB=-5V, IC=0 - -100 nA hFE(1) VCE=-1V, IC=-10mA 100 300 hFE(2) VCE=-1V, IC=-50mA 60 - hFE(3) VCE=-1V, IC=-100mA 30 - Collector-Emitter saturation voltage VCE(sat) IC=-50mA, IB=-5mA - -0.3 V Base-Emitter saturation voltage VBE(sat) IC=-50mA, IB=-5mA - -0.95 V Transition frequency fT VCE=-20V, IC=-10mA f=100MHz 300 - MHz Delay time td VCC=-3V, VBE(off)=-0.5V - 35 nS Rise time tr IC=-10mA, IB1=IB2=-1mA - 35 nS Storage time tS - 225 nS Fall time tf VCC=-3V, IC=-10mA IB1=IB2=-1mA - 75 nS DC current gain Company reserves the right to improve product design , functions and reliability without notice. REV: A Page 1 QW-JTR18 Comchip Technology CO., LTD. General Purpose Transistor RATING AND CHARACTERISTIC CURVES (MMBT3906M-HF) Fig.2 - hFE — IC Fig.1 - Static Characteristic -100 300 COMMON EMITTER Ta=25°C -80 Ta=100°C -450μA DC Current Gain, hFE Collector Current, IC (mA) COMMON EMITTER VCE=-1V -500μA -400μA -350μA -300μA -60 -250μA -200μA -40 -150μA -100μA 200 Ta=25°C 100 -20 IB=-50μA 0 0 -4 -8 -12 -16 0 -0.1 -20 -10 Collector-Emitter Voltage, VCE (V) Collector Current, Ic (mA) Fig.3 - VCEsat — IC Fig.4 - VBEsat — IC -500 -100 -200 -1.2 Base-Emitter Saturation Voltage, VBEsat (mV) Collector-Emitter Saturation Voltage, VCEsat (mV) -1 Ta=100°C -100 Ta=25°C Ta=25°C -0.8 Ta=100°C -0.4 β=10 β=10 -10 -0.0 -10 -1 -100 -200 -1 -10 Collector Current, Ic (mA) Collector Current, Ic (mA) Fig.5 - VBE — IC Fig.6 - Cob/Cib — VCB/VEB -100 -100 -200 9 -10 Capacitance, C (pF) Collector Current, Ic (mA) f=1MHz IE=0/IC=0 Ta=25°C Ta=100°C -1 Ta=25°C 3 COMMON EMITTER VCE=-1V -0.1 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 1 -0.1 Base - Emitter Voltage, VBE (V) -1 -10 -20 Reverse Voltge, V (V) Company reserves the right to improve product design , functions and reliability without notice. REV: A Page 2 QW-JTR18 Comchip Technology CO., LTD. General Purpose Transistor RATING AND CHARACTERISTIC CURVES (MMBT3906M-HF) Fig.7 - FT — IC Fig.8 - PC — Ta 150 400 COMMON EMITTER VCE=-20V Ta=25°C 200 Collector Power Dissipation, Pc (mW) Transtion frequency, fT (MHZ) 600 100 50 0 -1 -10 -50 0 Collector Current, IC (mA) 25 50 75 100 125 150 Ambient Temperature, Ta (°C) Company reserves the right to improve product design , functions and reliability without notice. REV: A Page 3 QW-JTR18 Comchip Technology CO., LTD. General Purpose Transistor Reel Taping Specification P1 d P0 W B F E T C 12 o 0 D2 D1 D W1 Trailer Tape Leader Tape 100±4 Empty Pockets 200±4 Empty Pockets Components End SOT-723 SOT-723 Start SYMBOL A B C d D D1 D2 (mm) 1.33 ± 0.05 1.45 ± 0.05 0.61 ± 0.05 1.50 ± 0.10 178 ± 2.00 54.40 ± 1.00 13.00 ± 1.00 (inch) 0.052 ± 0.002 0.057 ± 0.002 0.024 ± 0.002 0.059 + 0.004 7.008 ± 0.078 2.142 ± 0.039 0.512 ± 0.039 SYMBOL E F P P0 P1 W W1 (mm) 1.75 ± 0.10 3.50 ± 0.05 2.00 ± 0.10 4.00 ± 0.10 2.00 ± 0.10 8.00 + 0.30 /–0.10 12.30 ± 1.00 (inch) 0.069 ± 0.004 0.138 ± 0.002 0.079 ± 0.004 0.158 ± 0.004 0.079 ± 0.004 0.315 + 0.012 /–0.004 0.484 ± 0.039 Company reserves the right to improve product design , functions and reliability without notice. REV: A Page 4 QW-JTR18 Comchip Technology CO., LTD. General Purpose Transistor Marking Code 3 Part Number Marking Code MMBT3906M-HF 3N 3N 1 2 Solid dot “ ” = Halogen Free Suggested PAD Layout A SOT-723 SIZE (mm) (inch) A 0.42 0.017 B 0.30 0.012 C 0.30 0.012 D 0.32 0.013 E 0.80 0.031 F 1.00 0.039 B F C D Note: 1.General tolerance: ±0.05mm. 2.The pad layout is for reference purposes only. E Standard Packaging REEL PACK Case Type SOT-723 REEL Reel Size ( pcs ) (inch) 8,000 7 Company reserves the right to improve product design , functions and reliability without notice. REV: A Page 5 QW-JTR18 Comchip Technology CO., LTD.