DCR4330M52

DCR4330M52
Phase Control Thyristor
DS5941-3 April 2013 (LN30251)
KEY PARAMETERS
FEATURES

Double Side Cooling

High Surge Capability
VDRM
IT(AV)
ITSM
dV/dt*
dI/dt
5200V
4325A
53400A
2000V/µs
400A/µs
* Higher dV/dt selections available
APPLICATIONS

High Power Drives

High Voltage Power Supplies

Static Switches
VOLTAGE RATINGS
Part and
Ordering
Number
DCR4330M52*
DCR4330M50
DCR4330M45
Repetitive Peak
Voltages
VDRM and VRRM
V
5200
5000
4500
Conditions
Tvj = -40°C to 125°C,
IDRM = IRRM = 300mA,
VDRM, VRRM tp = 10ms,
VDSM & VRSM =
VDRM & VRRM + 100V
respectively
Lower voltage grades available.
o
o
*5000V @ -40 C, 5200V @ 0 C
(See Package Details for further information)
Fig. 1 Package outline
ORDERING INFORMATION
When ordering, select the required part number
shown in the Voltage Ratings selection table.
For example:
DCR4330M52
Note: Please use the complete part number when ordering
and quote this number in any future correspondence
relating to your order.
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DCR4330M52
SEMICONDUCTOR
CURRENT RATINGS
Tcase = 60°C unless stated otherwise
Symbol
Parameter
Test Conditions
Max.
Units
4325
A
Double Side Cooled
IT(AV)
Mean on-state current
IT(RMS)
RMS value
-
6790
A
Continuous (direct) on-state current
-
6250
A
IT
Half wave resistive load
SURGE RATINGS
Symbol
ITSM
2
It
Parameter
Surge (non-repetitive) on-state current
Test Conditions
Max.
Units
10ms half sine, Tcase = 125°C
53.4
kA
VR = 0
14.25
MA s
Min.
Max.
Units
2
I t for fusing
2
THERMAL AND MECHANICAL RATINGS
Symbol
Rth(j-c)
Rth(c-h)
Parameter
Thermal resistance – junction to case
Thermal resistance – case to heatsink
Test Conditions
Double side cooled
DC
-
0.00518
°C/W
Single side cooled
Anode DC
-
0.01012
°C/W
Cathode DC
-
0.01080
°C/W
Double side
-
0.001
°C/W
-
0.002
°C/W
-
125
°C
Clamping force 83.0kN
(with mounting compound)
Blocking VDRM / VRRM
Single side
Tvj
Virtual junction temperature
Tstg
Storage temperature range
-55
125
°C
Fm
Clamping force
74.0
91.0
kN
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DCR4330M52
SEMICONDUCTOR
DYNAMIC CHARACTERISTICS
Symbol
IRRM/IDRM
Parameter
Test Conditions
Min.
Max.
Units
Peak reverse and off-state current
At VRRM/VDRM, Tcase = 125°C
-
300
mA
dV/dt
Max. linear rate of rise of off-state voltage
To 67% VDRM, Tj = 125°C, gate open
-
2000
V/µs
dI/dt
Rate of rise of on-state current
From 67% VDRM to 2x IT(AV)
Repetitive 50Hz
-
400
A/µs
Gate source 30V, 10,
Non-repetitive
-
1000
A/µs
tr < 0.5µs, Tj = 125°C
VT(TO)
rT
tgd
Threshold voltage – Low level
1000 to 2600A at Tcase = 125°C
-
0.85
V
Threshold voltage – High level
2600 to 9000A at Tcase = 125°C
-
0.99
V
On-state slope resistance – Low level
1000 to 2600A at Tcase = 125°C
-
0.2115
m
On-state slope resistance – High level
2600 to 9000A at Tcase = 125°C
-
0.1578
m
VD = 67% VDRM, gate source 30V, 10
-
3
µs
750
µs
4030
5420
µC
49
59
A
Delay time
tr = 0.5µs, Tj = 25°C
tq
Turn-off time
Tj = 125°C,
VR = 200V, dI/dt = 1A/µs,
dVDR/dt = 20V/µs linear
QS
Stored charge
IT = 3000A, Tj = 125°C, dI/dt – 1A/µs,
VRpeak ~3100V, VR ~ 2100V
IRR
Reverse recovery current
IL
Latching current
Tj = 25°C, VD = 5V
-
3
A
IH
Holding current
Tj = 25°C, RG-K = , ITM = 500A, IT = 5A
-
300
mA
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DCR4330M52
SEMICONDUCTOR
GATE TRIGGER CHARACTERISTICS AND RATINGS
Symbol
Parameter
Test Conditions
Max.
Units
VGT
Gate trigger voltage
VDRM = 5V, Tcase = 25°C
1.5
V
VGD
Gate non-trigger voltage
At 50% VDRM, Tcase = 125°C
0.4
V
IGT
Gate trigger current
VDRM = 5V, Tcase = 25°C
400
mA
IGD
Gate non-trigger current
At 50% VDRM, Tcase = 125°C
10
mA
CURVES
9000
min @ 125ºC
max @ 125ºC
max @ 25ºC
min @ 25ºC
Instantaneous on-staate current,TI- (A)
8000
7000
6000
5000
4000
3000
2000
1000
0
0
0.5
1
1.5
2
2.5
Instantaneous on-state voltage , VT - (V)
Fig.2 Maximum & minimum on-state characteristics
VTM EQUATION
VTM = A + Bln (IT) + C.IT+D.IT
Where
A = 0.061592
B = 0.115333
C = 0.000119
D = 0.002394
these values are valid for Tj = 125°C for IT 250A to 9000A
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DCR4330M52
SEMICONDUCTOR
12
130
180
120
90
60
30
Maximum case temperature, Tcase ( o C )
Mean power dissipation - (kW)
10
180
120
90
60
30
120
8
6
4
2
110
100
90
80
70
60
50
40
30
20
10
0
0
0
500 1000 1500 2000 2500 3000 3500 4000 4500
0
500 1000 1500 2000 2500 3000 3500 4000 4500
Mean on-state current, IT(AV) - (A)
Mean on-state current, IT(AV) - (A)
Fig.3 On-state power dissipation – sine wave
Fig.4 Maximum permissible case temperature,
double side cooled – sine wave
180
120
90
60
30
100
75
50
16
d.c.
180
120
90
60
30
14
Mean power dissipation - (kW)
T
- ( ° C)
Maximum heatsink temperature,Heatsink
125
12
10
8
6
4
25
2
0
0
0
0
500 1000 1500 2000 2500 3000 3500 4000 4500
Mean on-state current, IT(AV) - (A)
Fig.5 Maximum permissible heatsink temperature,
double side cooled – sine wave
500
1000 1500 2000 2500 3000 3500 4000 4500
Mean on-state current, IT(AV) - (A)
Fig.6 On-state power dissipation – rectangular wave
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DCR4330M52
SEMICONDUCTOR
125
T
-(o C)
Maximum heatsink temperature heatsink
T -(° C)
Maximum permissible case temperature ,case
125
100
75
50
d.c.
180
120
90
60
30
25
100
75
50
d.c.
180
120
90
60
30
25
0
0
0
500 1000 1500 2000 2500 3000 3500 4000 4500
0
500 1000 1500 2000 2500 3000 3500 4000 4500
Mean on-state current, IT(AV) - (A)
Mean on-state current, IT(AV) - (A)
Fig.7 Maximum permissible case temperature,
double side cooled – rectangular wave
Fig.8 Maximum permissible heatsink temperature,
double side cooled – rectangular wave
Double side cooled
12.0
Anode side cooled
Anode Side Cooled.
Transient Thermal Impedance, Zth - ( °C/kW )
11.0
10.0
Double Side Cooled.
Cathode side cooled
Cathode Side Cooled.
Ri (°C/kW)
1
2
1.995338 1.242784
Ti (s)
Ri (°C/kW)
6.092995 1.957372 2.042252 0.035908
Ti (s)
Ri (°C/kW)
Ti (s)
0.05
3
1.9448
4
0.005
0.592935 0.592385 110.5108
5.459764 0.510898
0.05
110.1735
6.856845 1.876401 2.062845 0.025343
5.181139 0.557321
0.05
110.1546
9.0
i 4
Zth  [Ri  (1  exp(T / Ti )]
8.0
7.0
i 1
6.0
5.0
4.0
Rth(j-c) Conduction
Tables show the increments of thermal resistance Rth(j-c) when the device
operates at conduction angles other than d.c.
3.0
2.0
1.0
0.0
0.001
0.01
0.1
Time ( s )
1
10
100
Double side cooling
Zth (z)
°
sine.
rect.
180
0.51
0.36
120
0.57
0.49
90
0.64
0.56
60
0.70
0.63
30
0.74
0.71
15
0.76
0.74
Anode Side Cooling
Zth (z)
°
sine.
rect.
180
0.51
0.36
120
0.58
0.50
90
0.65
0.57
60
0.71
0.64
30
0.75
0.71
15
0.77
0.75
Cathode Sided Cooling
Zth (z)
°
sine.
rect.
180 0.51
0.36
120 0.58
0.50
90
0.65
0.57
60
0.71
0.64
30
0.75
0.71
15
0.77
0.75
Fig.9 Maximum (limit) transient thermal impedance – junction to case (°C/kW)
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DCR4330M52
SEMICONDUCTOR
10
140
28
130
26
120
24
110
22
100
20
ITSM
90
18
80
16
I2t
70
14
60
12
50
10
Conditions:
Tcase= 125°C
VR = 0
half-sine wave
40
30
20
8
6
4
10
2
0
1
1
10
1
100
I2t (MA2s)
Conditions:
Tcase = 125°C
VR =0
Pulse width = 10ms
Surge current, ITSM - (kA)
Surge current, TI SM- (kA)
100
0
100
10
Pulse width, tP - (ms)
Number of cycles
Fig.10 Multi-cycle surge current
Fig.11 Single-cycle surge current
600
25000
Qsmax = 5413.5*(di/dt)0.4762
IRRmax = 58.296*(di/dt)0.7559
500
I - (A)
Reverse recovery current,RR
Stored Charge, Qs - (uC)
20000
15000
Qsmin = 4030.8*(di/dt)0.5002
10000
Conditions:
Tj= 125ºC
VRpeak ~ 3100V
VRM ~ 2100V
snubber as appropriate to
control reverse voltage
5000
400
300
IRRmin = 49.567*(di/dt)0.7701
200
Conditions :
Tj = 125ºC
VRpeak ~ 3100V
VRM ~ 2100V
snubber as appropriate to
control reverse voltage
100
0
0
0
5
10
15
20
25
Rate of decay of on-state current, di/dt - (A/us)
Fig.12 Stored charge
0
5
10
15
20
25
Rate of decay of on-state current, di/dt - (A/us)
Fig.13 Reverse recovery current
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DCR4330M52
SEMICONDUCTOR
Fig14 Gate Characteristics
30
Lower Limit
Upper Limit
5W
10W
20W
50W
100W
150W
-40C
Gate trigger voltage, VGT - (V)
25
20
15
10
5
0
0
1
2
3
4
5
6
7
8
9
10
Gate trigger current, IGT - (A)
Fig. 15 Gate characteristics
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DCR4330M52
SEMICONDUCTOR
PACKAGE DETAILS
For further package information, please contact Customer Services. All dimensions in mm, unless stated otherwise.
DO NOT SCALE.
Device
22CT93M
28CT93M
42CT93M
DCR4330M52
DCR3480M65
DCR2760M85
Maximum Minimum
Thickness Thickness
(mm)
(mm)
25.815
25.305
25.89
25.38
26.12
25.61
26.26
25.75
26.5
25.99
26.84
26.33
Nominal weight: 1950g
Lead length: 420mm
Lead terminal connector: M4 ring
Package outline type code: M
Fig.16 Package outline
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DCR4330M52
SEMICONDUCTOR
IMPORTANT INFORMATION:
The products and data in this publication are intended for use by appropriately trained technical personnel.
Due to the diversity of product applications, the information contained herein is provided as a guide only and
does not constitute any guarantee of suitability for use in a specific application.The user must evaluate the
suitability of the product and the completeness of the product data for the application. The user is responsible
for product selection and ensuring all safety and any warning requirements are met. Should additional product
information be needed please contact Customer Service.
This publication is an uncontrolled document and is subject to change without notice. When referring to it,
please ensure that it is the most up to date version and has not been superseded.
The products are not intended for use in applications where a failure or malfunction may cause loss of life,
injury or damage to property. The user must ensure that appropriate safety precautions are taken to prevent or
mitigate the consequences of a product failure or malfunction.
The products must not be touched when operating because there is a danger of electrocution or severe
burning. Always use protective safety equipment such as appropriate shields for the product and wear safety
glasses. Even when disconnected any electric charge remaining in the product must be discharged and
allowed to cool before safe handling using protective gloves.
Extended exposure outside the product ratings may affect reliability leading to premature product failure. Use
outside the product ratings is likely to cause permanent damage to the product. In extreme conditions, as with
all semiconductors, this may include potentially hazardous rupture, a large current to flow or high voltage
arcing, resulting in fire or explosion. Appropriate application design and safety precautions should always be
followed to protect persons and property.
Product Status & Product Ordering:
We annotate datasheets in the top right hand corner of the front page, to indicate product status if it is not yet fully
approved for production. The annotations are as follows:Target Information: This is the most tentative form of information and represents a very preliminary specification. No
actual design work on the product has been started.
Preliminary Information: The product design is complete and final characterisation for volume production is in progress.
The datasheet represents the product as it is now understood but details may change.
No Annotation: The product has been approved for production and unless otherwise notified by Dynex any product
ordered will be supplied to the current version of the data sheet prevailing at the time of our order
acknowledgement.
All products and materials are sold and services provided subject to the Company's conditions of sale, which are
available on request.
All brand names and product names used in this publication are trademarks, registered trademarks or trade names of
their respective owners.
HEADQUARTERS OPERATIONS
CUSTOMER SERVICE
DYNEX SEMICONDUCTOR LIMITED
Doddington Road, Lincoln, Lincolnshire, LN6 3LF
United Kingdom.
Phone: +44 (0) 1522 500500
Fax:
+44 (0) 1522 500550
Web: http://www.dynexsemi.com
Phone: +44 (0) 1522 502753 / 502901
Fax:
+44 (0) 1522 500020
e-mail: [email protected]
 Dynex Semiconductor Ltd.
Technical Documentation – Not for resale.
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