ZXMC10A816N8 100V COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET Product Summary Device Features RDS(ON) (Ω)max ID (A)max TA = +25°C 100V Complementary in SOIC package Low On-Resistance 0.230 @ VGS= 10V 2.1 0.300 @ VGS= 4.5V 1.9 Fast Switching Speed Low Voltage (VGS = 4.5V) gate drive 0.235 @ VGS= -10V -2.2 Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) 0.320 @ VGS= -4.5V -1.9 Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability V(BR)DSS Q1 100V Q2 -100V Description Mechanical Data This new generation complementary dual MOSFET features low on- resistance achievable with low gate drive. DC Motor Control Backlighting Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Applications Case: SO-8 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish - Matte Tin annealed over Copper lead frame. Solderable per MIL-STD-202, Method 208 e3 Weight: 0.074 grams (approximate) D1 SO-8 S1 D1 G1 D1 S2 D2 G2 D2 G2 G1 S2 S1 Q1 N-Channel Q2 P-Channel Equivalent Circuit Top view Top View Top View D2 Ordering Information (Note 4) Notes: Product Reel size (inches) Tape width (mm) Quantity per reel ZXMC10A816N8 13 12 2,500 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http”//www.diodes.com/products/packages.html. Marking Information Top View 8 5 ZXMC Logo 10A816 Part no. YY WW Xth week: 01 ~ 53 Year: “11” = 2011 1 ZXMC10A816N8 Document number: DS33497 Rev. 2 - 2 4 1 of 11 www.diodes.com March 2013 © Diodes Incorporated ZXMC10A816N8 Maximum Ratings (@TA = +25°C, unless otherwise specified.) Symbol N-channel Q1 P-channel Q2 Unit Drain-Source Voltage VDSS 100 -100 V Gate-Source Voltage VGS 20 20 V ID 2.1 1.7 1.7 2.0 2.3 -2.2 -1.8 -1.7 -2.0 -2.4 A IDM 9.4 -10.5 A IS 3.0 -3.1 A ISM 9.4 -10.5 A IAS 1.2 Parameter (b)(d) Continuous Drain Current @ VGS= 10V; TA= +25°C (b)(d) @ VGS= 10V; TA= +70°C (a)(d) @ VGS= 10V; TA= +25°C (a)(e) @ VGS= 10V; TA= +25°C (f)(d) @ VGS= 10V; TL= +25°C Pulsed Drain Current @ VGS = 10V; TA = +25°C (c)(d) Continuous Source Current (Body Diode) at TA = +25°C Pulsed Source Current (Body Diode) at TA = +25°C (b)(d) (c)(d) Avalanche Current (g) L = 0.1 mH Power Dissipation at TA = +25°C Linear Derating Factor (a)(d) Power Dissipation at TA = +25°C Linear Derating Factor (a)(e) Power Dissipation at TA = +25°C Linear Derating Factor (b)(d) Power Dissipation at TL = +25°C Linear Derating Factor (f)(d) A PD W mW/C PD 1.8 14.2 W mW/C PD 2.1 16.7 W mW/C PD Operating and Storage Temperature Range 12 1.3 10.0 2.4 18.9 2.6 20.4 W mW/C Tj, Tstg -55 to +150 C Symbol RJA Value 100 C/W RJA 70 C/W RJA 60 C/W Thermal Characteristics Parameter Junction to Ambient (a)(d) Junction to Ambient (a)(e) Junction to Ambient (b)(d) Junction to Lead Notes: (f)(d) RJL 53 Unit 49 C/W (a) For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions; the device is measured when operating in a steady-state condition. (b) Same as note (a), except the device is measured at t 10 sec. (c) Same as note (a), except the device is pulsed with D= 0.02 and pulse width 300µs. The pulse current is limited by the maximum junction temperature. (d) For a dual device with one active die. (e) For a device with two active die running at equal power. (f) Thermal resistance from junction to solder-point (at the end of the drain lead); the device is operating in a steady-state condition. (g) IAS rating are based on low frequency and duty cycles to keep TJ = +25°C. ZXMC10A816N8 Document number: DS33497 Rev. 2 - 2 2 of 11 www.diodes.com March 2013 © Diodes Incorporated ZXMC10A816N8 Thermal Characteristics 10 10 RDS(ON) -ID Drain Current (A) ID Drain Current (A) Limited 1 DC 1s 100m 10m 10ms 1ms Single Pulse, T amb=25°C 0.1 Limited 1 DC 1s 100m 100ms Note (a)(d) RDS(ON) 1 100ms 10m 100us 10 1ms Single Pulse, T amb=25°C 0.1 100 VDS Drain-Source Voltage (V) 10ms Note (a)(d) 1 100us 10 100 -VDS Drain-Source Voltage (V) N-channel Safe Operating Area P-channel Safe Operating Area 80 60 D=0.5 40 Single Pulse D=0.2 20 D=0.05 0 100µ D=0.1 1m 10m 100m 1 10 100 1k Pulse Width (s) Max Power Dissipation (W) Thermal Resistance (°C/W) 2.0 100 1.5 One active die 1.0 0.5 0.0 Transient Thermal Impedance Maximum Power (W) Two active die 0 25 50 75 100 125 150 Temperature (°C) Derating Curve Single Pulse T amb=25°C 100 10 1 100µ 1m 10m 100m 1 10 100 1k Pulse Width (s) Pulse Power Dissipation ZXMC10A816N8 Document number: DS33497 Rev. 2 - 2 3 of 11 www.diodes.com March 2013 © Diodes Incorporated ZXMC10A816N8 Electrical Characteristics Q1 N-Channel (@TA = +25°C, unless otherwise specified.) Parameter Symbol Min Typ Max Unit V(BR)DSS 100 — — V Conditions Static Drain-Source Breakdown Voltage ID = 250µA, VGS = 0V Zero Gate Voltage Drain Current IDSS — — 0.5 µA VDS = 100V, VGS = 0V Gate-Body Leakage IGSS — — 100 nA VGS = 20V, VDS = 0V VGS(th) 1.7 — 2.4 V ID = 250µA, VDS = VGS RDS(ON) — 0.170 0.210 0.230 0.300 Ω VGS = 10V, ID = 1.0A VGS = 4.5V, ID = 0.5A gfs — 4.8 S VDS= 15V, ID= 1.6A Gate-Source Threshold Voltage Static Drain-Source On-State Resistance Forward Transconductance Dynamic Capacitance (a) (c) (a) — (c) Input Capacitance Ciss — 497 — pF Output Capacitance Coss — 29 — pF Reverse Transfer Capacitance Crss — 18 — pF td(ON) — 2.9 — ns tr — 2.1 — ns td(OFF) — 12.1 — ns tf — 5.0 — ns Total Gate Charge Qg — 9.2 — nC Gate-Source Charge Qgs — 1.7 — nC Gate-Drain Charge Qgd — 2.5 — nC VSD — 0.85 0.95 V trr — 32 — ns Qrr — 40 — nC RG 0 — 3 Ω Switching VDS = 50V, VGS = 0V f = 1MHz (b) (c) Turn-On-Delay Time Rise Time Turn-Off Delay Time Fall Time Gate Charge VDD = 50V, VGS = 10V ID = 1.0A RG 6.0, (c) VDS = 50V, VGS = 10V ID = 1.6A Source–Drain Diode Diode Forward Voltage (a) Reverse Recovery Time (c) Reverse Recovery Charge (c) IS = 1.7A, VGS = 0V IS = 1.7A, di/dt = 100A/s Gate Resistance Gate Resistance Notes: VDS = 0V, VGS = 0V, f = 1.0MHz (a) Measured under pulsed conditions. Pulse width 300s; duty cycle 2%. (b) Switching characteristics are independent of operating junction temperature. (c) For design aid only, not subject to production testing. ZXMC10A816N8 Document number: DS33497 Rev. 2 - 2 4 of 11 www.diodes.com March 2013 © Diodes Incorporated ZXMC10A816N8 Typical Characteristics Q1 N-Channel 10V T = 25°C 10 5V 4.5V 4V 1 3.5V 0.1 VGS 3V 0.01 0.1 1 ID Drain Current (A) ID Drain Current (A) 10 4.5V 4V 3.5V 1 3V VGS 0.1 2.5V 0.01 10 5V 10V T = 150°C VDS Drain-Source Voltage (V) 0.1 1 10 VDS Drain-Source Voltage (V) Output Characteristics Output Characteristics Normalised RDS(on) and VGS(th) ID Drain Current (A) 2.2 T = 150°C 1 T = 25°C 0.1 VDS = 10V 0.01 2.0 2.5 3.0 3.5 4.0 4.5 1.8 RDS(on) 1.6 1.4 1.2 1.0 VGS(th) 0.8 VGS = VDS ID = 250uA 0.6 0.4 -50 VGS Gate-Source Voltage (V) Typical Transfer Characteristics VGS = 10V ID = 1.6A 2.0 0 50 100 150 Tj Junction Temperature (°C) Normalised Curves v Temperature 10 T = 25°C VGS 3.5V 4V 1 4.5V 5V 10V 0.1 0.01 0.1 1 ID Drain Current (A) 10 On-Resistance v Drain Current ZXMC10A816N8 Document number: DS33497 Rev. 2 - 2 ISD Reverse Drain Current (A) RDS(on) Drain-Source On-Resistance 10 3V T = 150°C 1 T = 25°C 0.1 0.01 0.2 0.4 0.6 0.8 1.0 1.2 VSD Source-Drain Voltage (V) Source-Drain Diode Forward Voltage 5 of 11 www.diodes.com March 2013 © Diodes Incorporated ZXMC10A816N8 Typical Characteristics Q1 N-Channel (cont.) 700 C Capacitance (pF) 500 CISS 400 300 COSS 200 CRSS 100 0 0.1 1 10 100 VDS - Drain - Source Voltage (V) Capacitance v Drain-Source Voltage VGS Gate-Source Voltage (V) 10 VGS = 0V f = 1MHz 600 ID = 1.6A 8 6 4 2 VDS = 50V 0 0 2 4 6 8 10 Q - Charge (nC) Gate-Source Voltage v Gate Charge Test Circuits Current regulator QG 12V VG QGS 50k Same as D.U.T QGD VDS IG D.U.T ID VGS Charge Basic gate charge waveform Gate charge test circuit VDS 90% RD VGS VDS RG VDD 10% VGS td(on) tr t(on) td(off) tr t(on) Switching time waveforms ZXMC10A816N8 Document number: DS33497 Rev. 2 - 2 6 of 11 www.diodes.com Switching time test circuit March 2013 © Diodes Incorporated ZXMC10A816N8 Electrical Characteristics Q2 P-Channel (@TA = +25°C, unless otherwise specified.) Parameter Symbol Min Typ Max Unit Conditions Static Drain-Source Breakdown Voltage V(BR)DSS -100 — — V Zero Gate Voltage Drain current IDSS — — -0.5 µA VDS = -100V, VGS = 0V Gate-Body Leakage IGSS — — 100 nA VGS = 20V, VDS = 0V VGS(th) -2.0 — -3.0 V ID = -250µA, VDS = VGS RDS(ON) — 0.170 0.250 0.235 0.320 Ω VGS = -10V, ID = -1.0A VGS = -4.5V, ID = -0.5A gfs — 4.7 — S VDS = -15V, ID = -2.1A Gate-Source Threshold Voltage Static Drain-Source On-State Resistance Forward Transconductance Dynamic Capacitance (a) (c) (a) (c) Input Capacitance Ciss — 717 — pF Output Capacitance Coss — 55 — pF Reverse Transfer Capacitance Crss — 46 — pF td(ON) — 4.3 — ns tr — 5.2 — ns Switching ID = -250µA, VGS = 0V VDS = -50V, VGS = 0V f = 1MHz (b) (c) Turn-On-Delay Time Rise Time Turn-Off Delay Time td(OFF) — 20 — ns tf — 12 — ns Total Gate Charge Qg — 16.5 — nC Gate-Source Charge Qgs — 2.5 — nC Gate-Drain Charge Qgd — 5.4 — nC VSD — -0.85 -0.95 V trr — 43 — ns Qrr — 77 — nC RG 0 — 100 Fall Time Gate Charge VDD = -50V, VGS = -10V ID = -1A RG 6.0, (c) VDS = -50V, VGS = -10V ID = -2.1A Source–Drain Diode Diode Forward Voltage (a) Reverse Recovery Time (c) Reverse Recovery Charge (c) IS = -1.7A, VGS = 0V IS = -1.7A, di/dt = 100A/s Gate Resistance Gate Resistance Notes: VDS = 0V, VGS = 0V, f = 1.0MHz (a) Measured under pulsed conditions. Pulse width 300s; duty cycle 2%. (b) Switching characteristics are independent of operating junction temperature. (c) For design aid only, not subject to production testing. ZXMC10A816N8 Document number: DS33497 Rev. 2 - 2 7 of 11 www.diodes.com March 2013 © Diodes Incorporated ZXMC10A816N8 Typical Characteristics Q2 P-Channel 10V T = 25°C 10 5V 4.5V 4V 1 3.5V 0.1 -VGS 0.1 1 -ID Drain Current (A) -ID Drain Current (A) 10 5V 4.5V 4V 1 3.5V 3V 0.1 -VGS 0.01 10 10V T = 150°C -VDS Drain-Source Voltage (V) 0.1 1 10 -VDS Drain-Source Voltage (V) Output Characteristics Output Characteristics Normalised RDS(on) and VGS(th) T = 150°C T = 25°C 1 -VDS = 10V 3.0 3.5 4.0 4.5 5.0 -VGS Gate-Source Voltage (V) RDS(on) Drain-Source On-Resistance Typical Transfer Characteristics -VGS 3.5V 4V 4.5V 5V 1 7V 0.1 0.1 10V 1 -ID Drain Current (A) 10 On-Resistance v Drain Current ZXMC10A816N8 Document number: DS33497 Rev. 2 - 2 ID = - 2.1A 1.6 RDS(on) 1.4 1.2 1.0 VGS(th) 0.8 VGS = VDS 0.6 ID = -250uA 0 50 100 Tj Junction Temperature (°C) 150 Normalised Curves v Temperature T = 25°C 10 VGS = -10V 1.8 -50 -ISD Reverse Drain Current (A) -ID Drain Current (A) 2.0 10 1 T = 150°C 0.1 T = 25°C 0.01 1E-3 0.2 0.4 0.6 0.8 -VSD Source-Drain Voltage (V) 1.0 Source-Drain Diode Forward Voltage 8 of 11 www.diodes.com March 2013 © Diodes Incorporated ZXMC10A816N8 Typical Characteristics Q2 P-Channel (cont.) C Capacitance (pF) VGS = 0V f = 1MHz 800 CISS 600 COSS 400 CRSS 200 0 0.1 1 10 -VDS - Drain - Source Voltage (V) 100 -VGS Gate-Source Voltage (V) 10 1000 ID = -2.1A 8 6 4 2 VDS = -50V 0 0 2 4 6 8 10 12 14 16 18 Q - Charge (nC) Gate-Source Voltage v Gate Charge Capacitance v Drain-Source Voltage Test Circuits Current regulator QG 12V VG QGS 50k 0.2F Same as D.U.T QGD VDS IG D.U.T ID VGS Charge Basic gate charge waveform Gate charge test circuit VDS 90% RD VGS VDS RG VDD 10% VGS tr td(off) t(on) tr t(on) Switching time waveforms ZXMC10A816N8 Document number: DS33497 Rev. 2 - 2 Pulse width ⬍ 1S Duty factor 0.1% td(on) 9 of 11 www.diodes.com Switching time test circuit March 2013 © Diodes Incorporated ZXMC10A816N8 Package Outline Dimensions 0.254 Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version. E1 E A1 L Gauge Plane Seating Plane Detail ‘A’ h 7°~9° 45° Detail ‘A’ A2 A A3 b e SO-8 Dim Min Max A 1.75 A1 0.10 0.20 A2 1.30 1.50 A3 0.15 0.25 b 0.3 0.5 D 4.85 4.95 E 5.90 6.10 E1 3.85 3.95 e 1.27 Typ h 0.35 L 0.62 0.82 0 8 All Dimensions in mm D Suggested Pad Layout Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. X C1 Dimensions X Y C1 C2 Value (in mm) 0.60 1.55 5.4 1.27 C2 Y ZXMC10A816N8 Document number: DS33497 Rev. 2 - 2 10 of 11 www.diodes.com March 2013 © Diodes Incorporated ZXMC10A816N8 IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes Incorporated. LIFE SUPPORT Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright © 2013, Diodes Incorporated www.diodes.com ZXMC10A816N8 Document number: DS33497 Rev. 2 - 2 11 of 11 www.diodes.com March 2013 © Diodes Incorporated