ZXMC4559DN8 COMPLEMENTARY 60V ENHANCEMENT MODE MOSFET ADVANCE INFORMATION NEW PRODUCT Product Summary Features and Benefits Device V(BR)DSS RDS(on) max Q2 Q1 60V -60V 55mΩ @ VGS = 10V 105mΩ @ VGS = -10V ID TA = +25°C 4.7A -3.9A • Low Input Capacitance • Low On-Resistance • Fast Switching Speed • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) • Halogen and Antimony Free. “Green” Device (Note 3) Description • Qualified to AEC-Q101 Standards for High Reliability This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on)) and yet maintain superior switching Mechanical Data performance, making it ideal for high efficiency power management • applications. • Case: SO-8 Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Applications • Moisture Sensitivity: Level 1 per J-STD-020 • Terminal Connections: See Diagram • DC-DC Converters • • Power Management Functions • Backlighting Terminals: Finish – Tin Finish annealed over Copper leadframe Solderable per MIL-STD-202, Method 208 • Weight: 0.074 grams (approximate) D2 S2 D2 G2 D2 S1 D1 G1 D1 G2 D1 G1 S2 TOP VIEW Internal Schematic Top View N-Channel MOSFET S1 P-Channel MOSFET Ordering Information (Note 4) Part Number ZXMC4559DN8TA ZXMC4559DN8TC Notes: Compliance Standard Standard Case SO-8 SO-8 Packaging 500/Tape & Reel 2,500/Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http://www.diodes.com/products/packages.html. Marking Information 8 5 ZXMC 4559 ZXMC4559 = Product Type Marking Code YYWW = Date Code Marking YY = Year (ex: 14 = 2014) WW = Week (01 - 53) YY WW 1 ZXMC4559DN8 Document number: DS34498 Rev. 7- 2 4 1 of 11 www.diodes.com March 2014 © Diodes Incorporated ZXMC4559DN8 Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic ADVANCE INFORMATION NEW PRODUCT Symbol Value_Q2 Value_Q1 Drain-Source Voltage VDSS 60 -60 V Gate-Source Voltage VGSS ±20 ±20 V SteadyState (Note 5) ID 3.6 -2.6 A t<10s (Note 6) ID 4.7 -3.9 A A Continuous Drain Current VGS = 10V Maximum Body Diode Forward Current at t<10s (Note 6) Units IS 3.4 -3.2 Pulsed Drain Current (300µs pulse, duty cycle = 2%) IDM 22.2 -18.3 A Pulsed Source Current (Body Diode) (300µs pulse, duty cycle = 2%) ISM 22.2 -18.3 A Thermal Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Power Dissipation Linear Derating Factor (Note 5) Power Dissipation Linear Derating Factor (Note 6) PD PD Value 1.25 10 2.1 17 Thermal Resistance, Junction to Ambient (Note 5) RθJA 100 Thermal Resistance, Junction to Ambient (Note 6) RθJA 58 TJ, TSTG -55 to +150 Operating and Storage Temperature Range ZXMC4559DN8 Document number: DS34498 Rev. 7- 2 2 of 11 www.diodes.com Units W mW/°C W mW/°C °C/W °C March 2014 © Diodes Incorporated ADVANCE INFORMATION NEW PRODUCT ZXMC4559DN8 ZXMC4559DN8 Document number: DS34498 Rev. 7- 2 3 of 11 www.diodes.com March 2014 © Diodes Incorporated ZXMC4559DN8 ADVANCE INFORMATION NEW PRODUCT Electrical Characteristics N-Channel Q2 (@TA = +25°C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 7) Symbol Min Typ Max Unit Test Condition Drain-Source Breakdown Voltage BVDSS 60 ⎯ ⎯ V VGS = 0V, ID = 250µA Zero Gate Voltage Drain Current IDSS ⎯ ⎯ 1.0 µA VDS = 60V, VGS = 0V Gate-Source Leakage IGSS ⎯ ⎯ ±100 nA VGS = ±20V, VDS = 0V VGS(th) 1.0 ⎯ ⎯ V VDS = VGS, ID = 250µA ⎯ ⎯ 55 ⎯ ⎯ 75 1.2 V VGS = 0V, IS = 5.5A S VDS=15V,ID=4.5A pF VDS = 30V, VGS = 0V, f = 1.0MHz nC VDS = 30V, ID = 4.5A nS VDD = 30V, ID = 1.0A VGS = 10V, RG = 6.0Ω ON CHARACTERISTICS (Note 7) Gate Threshold Voltage Static Drain-Source On-Resistance RDS(ON) Diode Forward Voltage VSD ⎯ 0.85 Forward Transconductance gfs ⎯ 10.2 ⎯ Input Capacitance Ciss ⎯ 1063 ⎯ Output Capacitance Coss ⎯ 104 ⎯ Reverse Transfer Capacitance Crss ⎯ 64 ⎯ Total Gate Charge (VGS = 5.0V) Qg ⎯ 11 ⎯ Total Gate Charge (VGS = 10V) Qg ⎯ 20.4 ⎯ Gate-Source Charge Qgs ⎯ 4.1 ⎯ Gate-Drain Charge Qgd ⎯ 5.1 ⎯ Turn-On Delay Time tD(on) ⎯ 3.5 ⎯ Turn-On Rise Time tr ⎯ 4.1 ⎯ ⎯ mΩ VGS = 10V, ID = 4.5A VGS = 4.5V, ID = 4.0A DYNAMIC CHARACTERISTICS (Note 8) tD(off) ⎯ 26.2 Turn-Off Fall Time tf ⎯ 10.6 ⎯ Body Diode Reverse Recovery Time trr ⎯ 22 ⎯ nS IF = 2.2A, di/dt = 100A/μs Body Diode Reverse Recovery Charge Qrr ⎯ 21.4 ⎯ nC IF = 2.2A, di/dt = 100A/μs Turn-Off Delay Time ZXMC4559DN8 Document number: DS34498 Rev. 7- 2 4 of 11 www.diodes.com March 2014 © Diodes Incorporated ZXMC4559DN8 ADVANCE INFORMATION NEW PRODUCT N-Channel Typical Characteristics ZXMC4559DN8 Document number: DS34498 Rev. 7- 2 5 of 11 www.diodes.com March 2014 © Diodes Incorporated ZXMC4559DN8 ADVANCE INFORMATION NEW PRODUCT N-Channel Typical Characteristics (cont.) ZXMC4559DN8 Document number: DS34498 Rev. 7- 2 6 of 11 www.diodes.com March 2014 © Diodes Incorporated ZXMC4559DN8 Electrical Characteristics P-Channel Q1 (@TA = +25°C, unless otherwise specified.) ADVANCE INFORMATION NEW PRODUCT Characteristic OFF CHARACTERISTICS (Note 7) Symbol Min Typ Max Unit Test Condition Drain-Source Breakdown Voltage BVDSS -60 ⎯ ⎯ V VGS = 0V, ID = -250µA Zero Gate Voltage Drain Current IDSS ⎯ ⎯ -1.0 µA VDS = -60V, VGS = 0V Gate-Source Leakage IGSS ⎯ ⎯ ±100 nA VGS = ±20V, VDS = 0V Gate Threshold Voltage VGS(th) -1.0 ⎯ ⎯ V VDS = VGS, ID = -250µA Static Drain-Source On-Resistance RDS(ON) ⎯ ⎯ 85 ⎯ ⎯ 125 VSD ⎯ -0.85 -0.95 V VGS = 0V, IS = -3.4A gfs ⎯ 7.2 ⎯ S VDS=-15V,ID=-2.9A Input Capacitance Ciss ⎯ 1021 ⎯ Output Capacitance Coss ⎯ 83.1 ⎯ pF Reverse Transfer Capacitance Crss ⎯ 56.4 ⎯ VDS = -30V, VGS = 0V f = 1.0MHz Total Gate Charge (VGS = -5.0V) Qg ⎯ 12.1 ⎯ Total Gate Charge (VGS = -10V) Qg ⎯ 24.2 ⎯ Gate-Source Charge Qgs ⎯ 2.5 ⎯ nC VDS = -30V, ID = -2.9A Gate-Drain Charge Qgd ⎯ 3.7 ⎯ Turn-On Delay Time tD(on) ⎯ 3.5 ⎯ Turn-On Rise Time tr ⎯ 4.1 ⎯ Turn-Off Delay Time tD(off) ⎯ 35 ⎯ nS VDD = -30V, ID = -1.0A VGS = -10V, RG = 6.0Ω Turn-Off Fall Time tf ⎯ 10 ⎯ Body Diode Reverse Recovery Time trr ⎯ 29.2 ⎯ nS IS = -2.0A, dI/dt = 100A/μs Body Diode Reverse Recovery Charge Qrr ⎯ 39.6 ⎯ nC IS = -2.0A, dI/dt = 100A/μs ON CHARACTERISTICS (Note 7) Diode Forward Voltage Forward Transconductance mΩ VGS = -10V, ID = -2.9A VGS = -4.5V, ID = -2.4A DYNAMIC CHARACTERISTICS (Note 8) Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to product testing. ZXMC4559DN8 Document number: DS34498 Rev. 7- 2 7 of 11 www.diodes.com March 2014 © Diodes Incorporated ZXMC4559DN8 ADVANCE INFORMATION NEW PRODUCT P-Channel Typical Characteristics ZXMC4559DN8 Document number: DS34498 Rev. 7- 2 8 of 11 www.diodes.com March 2014 © Diodes Incorporated ZXMC4559DN8 ADVANCE INFORMATION NEW PRODUCT P-Channel Typical Characteristics (cont.) ZXMC4559DN8 Document number: DS34498 Rev. 7- 2 9 of 11 www.diodes.com March 2014 © Diodes Incorporated ZXMC4559DN8 Package Outline Dimensions 0.254 ADVANCE INFORMATION NEW PRODUCT Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version. E1 E A1 L Gauge Plane Seating Plane Detail ‘A’ h 7°~9° 45° Detail ‘A’ A2 A A3 b e D SO-8 Dim Min Max A 1.75 A1 0.10 0.20 A2 1.30 1.50 A3 0.15 0.25 b 0.3 0.5 D 4.85 4.95 E 5.90 6.10 E1 3.85 3.95 e 1.27 Typ h 0.35 L 0.62 0.82 0° 8° θ All Dimensions in mm Suggested Pad Layout Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for latest version. X C1 Dimensions X Y C1 C2 Value (in mm) 0.60 1.55 5.4 1.27 C2 Y ZXMC4559DN8 Document number: DS34498 Rev. 7- 2 10 of 11 www.diodes.com March 2014 © Diodes Incorporated ZXMC4559DN8 ADVANCE INFORMATION NEW PRODUCT IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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LIFE SUPPORT Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright © 2014, Diodes Incorporated www.diodes.com ZXMC4559DN8 Document number: DS34498 Rev. 7- 2 11 of 11 www.diodes.com March 2014 © Diodes Incorporated