Data Sheet - Diodes Incorporated

ZXMC4559DN8
COMPLEMENTARY 60V ENHANCEMENT MODE MOSFET
ADVANCE INFORMATION
NEW PRODUCT
Product Summary
Features and Benefits
Device
V(BR)DSS
RDS(on) max
Q2
Q1
60V
-60V
55mΩ @ VGS = 10V
105mΩ @ VGS = -10V
ID
TA = +25°C
4.7A
-3.9A
•
Low Input Capacitance
•
Low On-Resistance
•
Fast Switching Speed
•
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
•
Halogen and Antimony Free. “Green” Device (Note 3)
Description
•
Qualified to AEC-Q101 Standards for High Reliability
This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on)) and yet maintain superior switching
Mechanical Data
performance, making it ideal for high efficiency power management
•
applications.
•
Case: SO-8
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Applications
•
Moisture Sensitivity: Level 1 per J-STD-020
•
Terminal Connections: See Diagram
•
DC-DC Converters
•
•
Power Management Functions
•
Backlighting
Terminals: Finish – Tin Finish annealed over Copper leadframe
Solderable per MIL-STD-202, Method 208
•
Weight: 0.074 grams (approximate)
D2
S2
D2
G2
D2
S1
D1
G1
D1
G2
D1
G1
S2
TOP VIEW
Internal Schematic
Top View
N-Channel MOSFET
S1
P-Channel MOSFET
Ordering Information (Note 4)
Part Number
ZXMC4559DN8TA
ZXMC4559DN8TC
Notes:
Compliance
Standard
Standard
Case
SO-8
SO-8
Packaging
500/Tape & Reel
2,500/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
8
5
ZXMC
4559
ZXMC4559 = Product Type Marking Code
YYWW = Date Code Marking
YY = Year (ex: 14 = 2014)
WW = Week (01 - 53)
YY WW
1
ZXMC4559DN8
Document number: DS34498 Rev. 7- 2
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ZXMC4559DN8
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
ADVANCE INFORMATION
NEW PRODUCT
Symbol
Value_Q2
Value_Q1
Drain-Source Voltage
VDSS
60
-60
V
Gate-Source Voltage
VGSS
±20
±20
V
SteadyState
(Note 5)
ID
3.6
-2.6
A
t<10s
(Note 6)
ID
4.7
-3.9
A
A
Continuous Drain Current VGS = 10V
Maximum Body Diode Forward Current at t<10s (Note 6)
Units
IS
3.4
-3.2
Pulsed Drain Current (300µs pulse, duty cycle = 2%)
IDM
22.2
-18.3
A
Pulsed Source Current (Body Diode) (300µs pulse, duty cycle = 2%)
ISM
22.2
-18.3
A
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Power Dissipation
Linear Derating Factor (Note 5)
Power Dissipation
Linear Derating Factor (Note 6)
PD
PD
Value
1.25
10
2.1
17
Thermal Resistance, Junction to Ambient (Note 5)
RθJA
100
Thermal Resistance, Junction to Ambient (Note 6)
RθJA
58
TJ, TSTG
-55 to +150
Operating and Storage Temperature Range
ZXMC4559DN8
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Units
W
mW/°C
W
mW/°C
°C/W
°C
March 2014
© Diodes Incorporated
ADVANCE INFORMATION
NEW PRODUCT
ZXMC4559DN8
ZXMC4559DN8
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ZXMC4559DN8
ADVANCE INFORMATION
NEW PRODUCT
Electrical Characteristics N-Channel Q2 (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 7)
Symbol
Min
Typ
Max
Unit
Test Condition
Drain-Source Breakdown Voltage
BVDSS
60
⎯
⎯
V
VGS = 0V, ID = 250µA
Zero Gate Voltage Drain Current
IDSS
⎯
⎯
1.0
µA
VDS = 60V, VGS = 0V
Gate-Source Leakage
IGSS
⎯
⎯
±100
nA
VGS = ±20V, VDS = 0V
VGS(th)
1.0
⎯
⎯
V
VDS = VGS, ID = 250µA
⎯
⎯
55
⎯
⎯
75
1.2
V
VGS = 0V, IS = 5.5A
S
VDS=15V,ID=4.5A
pF
VDS = 30V, VGS = 0V,
f = 1.0MHz
nC
VDS = 30V, ID = 4.5A
nS
VDD = 30V, ID = 1.0A
VGS = 10V, RG = 6.0Ω
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
Static Drain-Source On-Resistance
RDS(ON)
Diode Forward Voltage
VSD
⎯
0.85
Forward Transconductance
gfs
⎯
10.2
⎯
Input Capacitance
Ciss
⎯
1063
⎯
Output Capacitance
Coss
⎯
104
⎯
Reverse Transfer Capacitance
Crss
⎯
64
⎯
Total Gate Charge (VGS = 5.0V)
Qg
⎯
11
⎯
Total Gate Charge (VGS = 10V)
Qg
⎯
20.4
⎯
Gate-Source Charge
Qgs
⎯
4.1
⎯
Gate-Drain Charge
Qgd
⎯
5.1
⎯
Turn-On Delay Time
tD(on)
⎯
3.5
⎯
Turn-On Rise Time
tr
⎯
4.1
⎯
⎯
mΩ
VGS = 10V, ID = 4.5A
VGS = 4.5V, ID = 4.0A
DYNAMIC CHARACTERISTICS (Note 8)
tD(off)
⎯
26.2
Turn-Off Fall Time
tf
⎯
10.6
⎯
Body Diode Reverse Recovery Time
trr
⎯
22
⎯
nS
IF = 2.2A, di/dt = 100A/μs
Body Diode Reverse Recovery Charge
Qrr
⎯
21.4
⎯
nC
IF = 2.2A, di/dt = 100A/μs
Turn-Off Delay Time
ZXMC4559DN8
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ZXMC4559DN8
ADVANCE INFORMATION
NEW PRODUCT
N-Channel Typical Characteristics
ZXMC4559DN8
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ZXMC4559DN8
ADVANCE INFORMATION
NEW PRODUCT
N-Channel Typical Characteristics (cont.)
ZXMC4559DN8
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Electrical Characteristics P-Channel Q1 (@TA = +25°C, unless otherwise specified.)
ADVANCE INFORMATION
NEW PRODUCT
Characteristic
OFF CHARACTERISTICS (Note 7)
Symbol
Min
Typ
Max
Unit
Test Condition
Drain-Source Breakdown Voltage
BVDSS
-60
⎯
⎯
V
VGS = 0V, ID = -250µA
Zero Gate Voltage Drain Current
IDSS
⎯
⎯
-1.0
µA
VDS = -60V, VGS = 0V
Gate-Source Leakage
IGSS
⎯
⎯
±100
nA
VGS = ±20V, VDS = 0V
Gate Threshold Voltage
VGS(th)
-1.0
⎯
⎯
V
VDS = VGS, ID = -250µA
Static Drain-Source On-Resistance
RDS(ON)
⎯
⎯
85
⎯
⎯
125
VSD
⎯
-0.85
-0.95
V
VGS = 0V, IS = -3.4A
gfs
⎯
7.2
⎯
S
VDS=-15V,ID=-2.9A
Input Capacitance
Ciss
⎯
1021
⎯
Output Capacitance
Coss
⎯
83.1
⎯
pF
Reverse Transfer Capacitance
Crss
⎯
56.4
⎯
VDS = -30V, VGS = 0V
f = 1.0MHz
Total Gate Charge (VGS = -5.0V)
Qg
⎯
12.1
⎯
Total Gate Charge (VGS = -10V)
Qg
⎯
24.2
⎯
Gate-Source Charge
Qgs
⎯
2.5
⎯
nC
VDS = -30V, ID = -2.9A
Gate-Drain Charge
Qgd
⎯
3.7
⎯
Turn-On Delay Time
tD(on)
⎯
3.5
⎯
Turn-On Rise Time
tr
⎯
4.1
⎯
Turn-Off Delay Time
tD(off)
⎯
35
⎯
nS
VDD = -30V, ID = -1.0A
VGS = -10V, RG = 6.0Ω
Turn-Off Fall Time
tf
⎯
10
⎯
Body Diode Reverse Recovery Time
trr
⎯
29.2
⎯
nS
IS = -2.0A, dI/dt = 100A/μs
Body Diode Reverse Recovery Charge
Qrr
⎯
39.6
⎯
nC
IS = -2.0A, dI/dt = 100A/μs
ON CHARACTERISTICS (Note 7)
Diode Forward Voltage
Forward Transconductance
mΩ
VGS = -10V, ID = -2.9A
VGS = -4.5V, ID = -2.4A
DYNAMIC CHARACTERISTICS (Note 8)
Notes:
5. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to product testing.
ZXMC4559DN8
Document number: DS34498 Rev. 7- 2
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ZXMC4559DN8
ADVANCE INFORMATION
NEW PRODUCT
P-Channel Typical Characteristics
ZXMC4559DN8
Document number: DS34498 Rev. 7- 2
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ZXMC4559DN8
ADVANCE INFORMATION
NEW PRODUCT
P-Channel Typical Characteristics (cont.)
ZXMC4559DN8
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Package Outline Dimensions
0.254
ADVANCE INFORMATION
NEW PRODUCT
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.
E1 E
A1
L
Gauge Plane
Seating Plane
Detail ‘A’
h
7°~9°
45°
Detail ‘A’
A2 A A3
b
e
D
SO-8
Dim
Min
Max
A
1.75
A1
0.10
0.20
A2
1.30
1.50
A3
0.15
0.25
b
0.3
0.5
D
4.85
4.95
E
5.90
6.10
E1
3.85
3.95
e
1.27 Typ
h
0.35
L
0.62
0.82
0°
8°
θ
All Dimensions in mm
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for latest version.
X
C1
Dimensions
X
Y
C1
C2
Value (in mm)
0.60
1.55
5.4
1.27
C2
Y
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ADVANCE INFORMATION
NEW PRODUCT
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the
final and determinative format released by Diodes Incorporated.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2014, Diodes Incorporated
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