US2882 Bipolar Hall Switch – Very High Sensitivity Features and Benefits Application Examples Wide operating voltage range from 3.5V to 24V Very high magnetic sensitivity CMOS technology Chopper-stabilized amplifier stage Low current consumption Open drain output Thin SOT23 3L and flat TO-92 3L both RoHS Compliant packages Automotive, Consumer and Industrial Solid-state switch Brushless DC motor commutation Speed detection Linear position detection Angular position detection Proximity detection Ordering Information Part No. Temperature Code Package Code US2882 US2882 E (-40°C to 85°C) E (-40°C to 85°C) SE (TSOT-3L) UA (TO-92) US2882 US2882 L (-40°C to 150°C) L (-40°C to 150°C) SE (TSOT-3L) UA (TO-92) 1 Functional Diagram 2 General Description The Melexis US2882 is a bipolar Hall-effect switch designed in mixed signal CMOS technology. The device integrates a voltage regulator, Hall sensor with dynamic offset cancellation system, Schmitt trigger and an open-drain output driver, all in a single package. Thanks to its wide operating voltage range and extended choice of temperature range, it is suitable for use in automotive and consumer applications. The device is delivered in a Thin Small Outline Transistor (TSOT) for surface mount process and in a Plastic Single In Line (TO-92 flat) for throughhole mount. Both 3-lead packages are RoHS compliant. 390100288201 Rev 001 Page 1 of 12 Data Sheet Aug/06 US2882 Bipolar Hall Switch – Very High Sensitivity Table of Contents 1 Functional Diagram ........................................................................................................ 1 2 General Description........................................................................................................ 1 3 Glossary of Terms .......................................................................................................... 3 4 Absolute Maximum Ratings ........................................................................................... 3 5 Pin Definitions and Descriptions................................................................................... 3 6 General Electrical Specifications .................................................................................. 4 7 Magnetic Specifications ................................................................................................. 4 8 Output Behaviour versus Magnetic Pole ...................................................................... 4 9 Detailed General Description ......................................................................................... 5 10 Unique Features............................................................................................................ 5 11 Performance Graphs .................................................................................................... 6 11.1 Magnetic parameters vs. TA.....................................................................................................................6 11.2 Magnetic parameters vs. VDD...................................................................................................................6 11.3 VDSon vs. TA ..............................................................................................................................................6 11.4 VDSon vs. VDD ............................................................................................................................................6 11.5 IDD vs. TA ..................................................................................................................................................6 11.6 IDD vs. VDD ................................................................................................................................................6 11.7 IOFF vs. TA .................................................................................................................................................7 11.8 IOFF vs. VDD ...............................................................................................................................................7 12 Test Conditions............................................................................................................. 7 12.1 Supply Current.........................................................................................................................................7 12.2 Output Saturation Voltage .......................................................................................................................7 12.3 Output Leakage Current ..........................................................................................................................7 12.4 Magnetic Thresholds ...............................................................................................................................7 13 Application Information................................................................................................ 8 13.1 Typical Three-Wire Application Circuit ....................................................................................................8 13.2 Two-Wire Circuit ......................................................................................................................................8 13.3 Automotive and Harsh, Noisy Environments Three-Wire Circuit ............................................................8 14 Application Comments ................................................................................................. 8 15 Standard information regarding manufacturability of Melexis products with different soldering processes........................................................................................... 9 16 ESD Precautions ........................................................................................................... 9 17 Package Information................................................................................................... 10 17.1 SE Package (TSOT-3L).........................................................................................................................10 17.2 UA Package (TO-92 flat) .......................................................................................................................11 18 Disclaimer.................................................................................................................... 12 390100288201 Rev 001 Page 2 of 12 Data Sheet Aug/06 US2882 Bipolar Hall Switch – Very High Sensitivity 3 Glossary of Terms MilliTesla (mT), Gauss RoHS TSOT ESD BLDC Units of magnetic flux density: 1mT = 10 Gauss Restriction of Hazardous Substances Thin Small Outline Transistor (TSOT package) – also referred with the Melexis package code “SE” Electro-Static Discharge Brush-Less Direct-Current 4 Absolute Maximum Ratings Parameter Symbol Supply Voltage VDD Supply Current IDD Output Voltage VOUT Output Current IOUT Storage Temperature Range TS Maximum Junction Temperature TJ Table 1: Absolute maximum ratings Value 28 50 28 50 -50 to 150 165 Units V mA V mA °C °C Exceeding the absolute maximum ratings may cause permanent damage. Exposure to absolute-maximumrated conditions for extended periods may affect device reliability. Operating Temperature Range Temperature Suffix “E” Temperature Suffix “L” Symbol TA TA Value -40 to 85 -40 to 150 Units °C °C 5 Pin Definitions and Descriptions SE Pin № UA Pin № Name 1 1 VDD 2 3 OUT 3 2 GND Table 2: Pin definitions and descriptions SE package 390100288201 Rev 001 Type Supply Output Ground Function Supply Voltage pin Open Drain Output pin Ground pin UA package Page 3 of 12 Data Sheet Aug/06 US2882 Bipolar Hall Switch – Very High Sensitivity 6 General Electrical Specifications o DC Operating Parameters TA = 25 C, VDD = 3.5V to 24V (unless otherwise specified) Parameter Symbol Supply Voltage VDD Supply Current IDD Output Saturation Voltage VDSon Output Leakage Current IOFF Output Rise Time tr Output Fall Time tf Maximum Switching Frequency FSW SE Package Thermal Resistance RTH UA Package Thermal Resistance RTH Table 3: Electrical specifications Test Conditions Operating B < BRP IOUT = 20mA, B > BOP B < BRP, VOUT = 24V RL = 1kΩ, CL = 20pF RL = 1kΩ, CL = 20pF Min 3.5 1.1 Typ 12 2.6 0.11 0.01 0.25 0.25 10 301 200 Single layer (1S) Jedec board Max 24 5 0.5 10 Units V mA V µA µs µs KHz °C/W °C/W 7 Magnetic Specifications DC Operating Parameters VDD = 3.5V to 24V (unless otherwise specified) Parameter Symbol Operating Point BOP Release Point BRP Hysteresis BHYST Operating Point BOP Release Point BRP Hysteresis BHYST Table 4: Magnetic specifications Test Conditions E spec. (TA max = 85°C) L spec. (TA max = 150°C) Min -3 -6 1.5 -3.5 -6 1.5 Typ Max 6 3 6 6 3.5 6 Units mT mT mT mT mT mT Note: For typical values, please refer to the performance graphs in section 11 8 Output Behaviour versus Magnetic Pole o o DC Operating Parameters TA = -40 C to 150 C, VDD = 3.5V to 24V (unless otherwise specified) Parameter Test Conditions (SE) OUT (SE) Test Conditions (UA) South pole B < BRP High B > BOP North pole B > BOP Low B < BRP Table 5: Output behaviour versus magnetic pole South pole North pole North pole OUT = high 390100288201 Rev 001 OUT (UA) Low High OUT = low (VDSon) SE package OUT = high South pole OUT = low (VDSon) UA package Page 4 of 12 Data Sheet Aug/06 US2882 Bipolar Hall Switch – Very High Sensitivity 9 Detailed General Description Based on mixed signal CMOS technology, Melexis US2882 is a Hall-effect device with very high magnetic sensitivity. It allows using generic magnets, weak magnets or larger air gap. The chopper-stabilized amplifier uses switched capacitor technique to suppress the offset generally observed with Hall sensors and amplifiers. The CMOS technology makes this advanced technique possible and contributes to smaller chip size and lower current consumption than bipolar technology. The small chip size is also an important factor to minimize the effect of physical stress. This combination results in more stable magnetic characteristics and enables faster and more precise design. The wide operating voltage from 3.5V to 24V, “L” and “E” operating temperature range and low current consumption make this device especially suitable for automotive and BLDC motor applications. The output signal is open-drain type. Such output allows simple connectivity with TTL or CMOS logic by using a pull-up resistor tied between a pull-up voltage and the device output. 10 Unique Features The US2882 exhibits bipolar magnetic switching characteristics. Therefore, it operates with both south and north poles. Typically, the device behaves as a latch with symmetric operating and release switching points (BOP=|BRP|). This means magnetic fields with equivalent strength and opposite direction drive the output high and low. Removing the magnetic field (B→0) keeps the output in its previous state. This latching property defines the device as a magnetic memory. Latch characteristic Depending on the magnetic switching points, the device may also behave as a unipolar positive switch (BOP and BRP strictly positive) or negative switch (BOP and BRP strictly negative). That is the output can be set high and low by only using one magnetic pole. In such case, removing the magnetic field changes the output level. Unipolar positive switch characteristic Unipolar negative switch characteristic In latch, positive or negative switch behaviour, a magnetic hysteresis BHYST keeps BOP and BRP separated by a minimal value. This hysteresis prevents output oscillation near the switching point. 390100288201 Rev 001 Page 5 of 12 Data Sheet Aug/06 US2882 Bipolar Hall Switch – Very High Sensitivity 11 Performance Graphs 11.1 Magnetic parameters vs. TA 11.2 Magnetic parameters vs. VDD 6 6 Brp, VDD=5V Bop, Ta=25°C Brp, Ta=25°C Bop, VDD=12V Brp, VDD=12V Bop, Ta=85°C Bop, Ta=85°C Bop, VDD=24V Brp, VDD=24V Bop, Ta=150°C Brp, Ta=150°C 4 2 Magnetic field (mT) Magnetic field (mT) 4 Bop, VDD=5V 0 -2 -4 2 0 -2 -4 -6 -6 -40 -20 0 20 40 60 80 100 120 140 0 5 10 Ta (°C) 15 20 VDD (Volts) 11.3 VDSon vs. TA 11.4 VDSon vs. VDD 0.5 0.5 0.4 0.4 Ta=-40°C Ta=25°C Ta=85°C Ta=150°C VDD=12V 0.3 VDSon (Volts) VDSon (Volts) VDD=5V VDD=24V 0.2 0.1 0.3 0.2 0.1 0 0 -40 -20 0 20 40 60 80 100 120 140 0 5 10 Ta (°C) 15 20 VDD (Volts) 11.5 IDD vs. TA 11.6 IDD vs. VDD 6 6 5 5 Ta=-40°C Ta=25°C VDD=5V Ta=85°C Ta=150°C VDD=12V 4 VDD=24V IDD (mA) IDD (mA) 4 3 3 2 2 1 1 0 0 -40 -20 0 20 40 60 80 100 120 140 0 Ta (°C) 390100288201 Rev 001 5 10 15 20 VDD (Volts) Page 6 of 12 Data Sheet Aug/06 US2882 Bipolar Hall Switch – Very High Sensitivity 11.7 IOFF vs. TA 11.8 IOFF vs. VDD 30 30 25 25 VDD=5V Ta=-40°C Ta=25°C VDD=12V 20 20 Ta=85°C Ioff (uA) Ioff (uA) VDD=24V 15 Ta=150°C 15 10 10 5 5 0 0 -40 -20 0 20 40 60 80 100 120 140 0 Ta (°C) 5 10 15 20 VDD (Volts) 12 Test Conditions Note : DUT = Device Under Test 12.1 Supply Current 12.2 Output Saturation Voltage 12.3 Output Leakage Current 12.4 Magnetic Thresholds 390100288201 Rev 001 Page 7 of 12 Data Sheet Aug/06 US2882 Bipolar Hall Switch – Very High Sensitivity 13 Application Information 13.1 Typical Three-Wire Application Circuit 13.2 Two-Wire Circuit 13.3 Automotive and Harsh, Noisy Environments Three-Wire Circuit Note: With this circuit, precise ON and OFF currents can be detected using only two connecting wires. The resistors RL and Rb can be used to bias the input current. Refer to the part specifications for limiting values. BRP : BOP : IOFF = IR + IDD = VDD/Rb + IDD ION = IOFF + IOUT = IOFF + VDD/RL 14 Application Comments For proper operation, a 100nF bypass capacitor should be placed as close as possible to the device between the VDD and ground pin. For reverse voltage protection, it is recommended to connect a resistor or a diode in series with the VDD pin. When using a resistor, three points are important: - the resistor has to limit the reverse current to 50mA maximum (VCC / R1 ≤ 50mA) - the resulting device supply voltage VDD has to be higher than VDD min (VDD = VCC – R1.IDD) 2 - the resistor has to withstand the power dissipated in reverse voltage condition (PD = VCC / R1) When using a diode, a reverse current cannot flow and the voltage drop is almost constant (≈0.7V). Therefore, a 100Ω/0.25W resistor for 5V application and a diode for higher supply voltage are recommended. Both solutions provide the required reverse voltage protection. When a weak power supply is used or when the device is intended to be used in noisy environment, it is recommended that figure 13.3 from the Application Information section is used. The low-pass filter formed by R1 and C1 and the zener diode Z1 bypass the disturbances or voltage spikes occurring on the device supply voltage VDD. The diode D1 provides additional reverse voltage protection. 390100288201 Rev 001 Page 8 of 12 Data Sheet Aug/06 US2882 Bipolar Hall Switch – Very High Sensitivity 15 Standard information regarding manufacturability of Melexis products with different soldering processes Our products are classified and qualified regarding soldering technology, solderability and moisture sensitivity level according to following test methods: Reflow Soldering SMD’s (Surface Mount Devices) • • IPC/JEDEC J-STD-020 Moisture/Reflow Sensitivity Classification for Nonhermetic Solid State Surface Mount Devices (classification reflow profiles according to table 5-2) EIA/JEDEC JESD22-A113 Preconditioning of Nonhermetic Surface Mount Devices Prior to Reliability Testing (reflow profiles according to table 2) Wave Soldering SMD’s (Surface Mount Devices) and THD’s (Through Hole Devices) • • EN60749-20 Resistance of plastic- encapsulated SMD’s to combined effect of moisture and soldering heat EIA/JEDEC JESD22-B106 and EN60749-15 Resistance to soldering temperature for through-hole mounted devices Iron Soldering THD’s (Through Hole Devices) • EN60749-15 Resistance to soldering temperature for through-hole mounted devices Solderability SMD’s (Surface Mount Devices) and THD’s (Through Hole Devices) • EIA/JEDEC JESD22-B102 and EN60749-21 Solderability For all soldering technologies deviating from above mentioned standard conditions (regarding peak temperature, temperature gradient, temperature profile etc) additional classification and qualification tests have to be agreed upon with Melexis. The application of Wave Soldering for SMD’s is allowed only after consulting Melexis regarding assurance of adhesive strength between device and board. Melexis is contributing to global environmental conservation by promoting lead free solutions. For more information on qualifications of RoHS compliant products (RoHS = European directive on the Restriction Of the use of certain Hazardous Substances) please visit the quality page on our website: http://www.melexis.com/quality.asp 16 ESD Precautions Electronic semiconductor products are sensitive to Electro Static Discharge (ESD). Always observe Electro Static Discharge control procedures whenever handling semiconductor products. 390100288201 Rev 001 Page 9 of 12 Data Sheet Aug/06 US2882 Bipolar Hall Switch – Very High Sensitivity 17 Package Information 0.127 +0.023 - 0.007 0.891+/-0.05 0.20 0.15 0.20 1.90 BSC 0.30 0.45 0.95 BSC see note 3 2.90 BSC 17.1 SE Package (TSOT-3L) 390100288201 Rev 001 Page 10 of 12 Data Sheet Aug/06 US2882 Bipolar Hall Switch – Very High Sensitivity 14.5+/-0.5 2.5 min see note 4 1.65+/-0.10 3.00+/-0.20 17.2 UA Package (TO-92 flat) 390100288201 Rev 001 Page 11 of 12 Data Sheet Aug/06 US2882 Bipolar Hall Switch – Very High Sensitivity 18 Disclaimer Devices sold by Melexis are covered by the warranty and patent indemnification provisions appearing in its Term of Sale. Melexis makes no warranty, express, statutory, implied, or by description regarding the information set forth herein or regarding the freedom of the described devices from patent infringement. Melexis reserves the right to change specifications and prices at any time and without notice. Therefore, prior to designing this product into a system, it is necessary to check with Melexis for current information. This product is intended for use in normal commercial applications. Applications requiring extended temperature range, unusual environmental requirements, or high reliability applications, such as military, medical lifesupport or life-sustaining equipment are specifically not recommended without additional processing by Melexis for each application. The information furnished by Melexis is believed to be correct and accurate. However, Melexis shall not be liable to recipient or any third party for any damages, including but not limited to personal injury, property damage, loss of profits, loss of use, interrupt of business or indirect, special incidental or consequential damages, of any kind, in connection with or arising out of the furnishing, performance or use of the technical data herein. No obligation or liability to recipient or any third party shall arise or flow out of Melexis’ rendering of technical or other services. © 2005 Melexis NV. All rights reserved. For the latest version of this document, go to our website at www.melexis.com Or for additional information contact Melexis Direct: Europe, Africa, Asia: Phone: +32 1367 0495 E-mail: [email protected] America: Phone: +1 603 223 2362 E-mail: [email protected] ISO/TS 16949 and ISO14001 Certified 390100288201 Rev 001 Page 12 of 12 Data Sheet Aug/06