IGBT HighspeedDuoPack:IGBTinTrenchandFieldstoptechnology withsoft,fastrecoveryanti-paralleldiode IKW20N60H3 600Vhighspeedswitchingseriesthirdgeneration Datasheet IndustrialPowerControl IKW20N60H3 Highspeedswitchingseriesthirdgeneration HighspeedDuoPack:IGBTinTrenchandFieldstoptechnologywithsoft,fast recoveryanti-paralleldiode Features: C TRENCHSTOPTMtechnologyoffering •verylowVCEsat •lowEMI •Verysoft,fastrecoveryanti-paralleldiode •maximumjunctiontemperature175°C •qualifiedaccordingtoJEDECfortargetapplications •Pb-freeleadplating;RoHScompliant •completeproductspectrumandPSpiceModels: http://www.infineon.com/igbt/ G E Applications: •uninterruptiblepowersupplies •weldingconverters •converterswithhighswitchingfrequency G C E KeyPerformanceandPackageParameters Type IKW20N60H3 VCE IC VCEsat,Tvj=25°C Tvjmax Marking Package 600V 20A 1.95V 175°C K20H603 PG-TO247-3 2 Rev.2.2,2014-03-12 IKW20N60H3 Highspeedswitchingseriesthirdgeneration TableofContents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Electrical Characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14 Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16 3 Rev.2.2,2014-03-12 IKW20N60H3 Highspeedswitchingseriesthirdgeneration Maximumratings Parameter Symbol Value Unit Collector-emittervoltage,Tvj≥25°C VCE 600 V DCcollectorcurrent,limitedbyTvjmax TC=25°C TC=100°C IC 40.0 20.0 A Pulsedcollectorcurrent,tplimitedbyTvjmax ICpuls 80.0 A Turn off safe operating area VCE≤600V,Tvj≤175°C,tp=1µs - 80.0 A Diodeforwardcurrent,limitedbyTvjmax TC=25°C TC=100°C IF 20.0 10.0 A Diodepulsedcurrent,tplimitedbyTvjmax IFpuls 80.0 A Gate-emitter voltage VGE ±20 V Short circuit withstand time VGE=15.0V,VCC≤400V Allowed number of short circuits < 1000 Time between short circuits: ≥ 1.0s Tvj=150°C tSC PowerdissipationTC=25°C PowerdissipationTC=100°C Ptot 170.0 85.0 W Operating junction temperature Tvj -40...+175 °C Storage temperature Tstg -55...+150 °C µs 5 Soldering temperature, wave soldering 1.6 mm (0.063 in.) from case for 10s °C 260 Mounting torque, M3 screw Maximum of mounting processes: 3 M 0.6 Nm ThermalResistance Parameter Characteristic Symbol Conditions Max.Value Unit IGBT thermal resistance, junction - case Rth(j-c) 0.88 K/W Diode thermal resistance, junction - case Rth(j-c) 1.89 K/W Thermal resistance junction - ambient Rth(j-a) 40 K/W 4 Rev.2.2,2014-03-12 IKW20N60H3 Highspeedswitchingseriesthirdgeneration ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified Parameter Symbol Conditions Value min. typ. max. 600 - - VGE=15.0V,IC=20.0A Tvj=25°C Tvj=125°C Tvj=175°C - 1.95 2.30 2.50 2.40 - - 1.65 1.67 1.65 2.05 - 4.1 5.1 5.7 Unit StaticCharacteristic Collector-emitter breakdown voltage V(BR)CES VGE=0V,IC=2.00mA Collector-emitter saturation voltage VCEsat V V Diode forward voltage VF VGE=0V,IF=10.0A Tvj=25°C Tvj=125°C Tvj=175°C Gate-emitter threshold voltage VGE(th) IC=0.29mA,VCE=VGE Zero gate voltage collector current ICES VCE=600V,VGE=0V Tvj=25°C Tvj=175°C - - Gate-emitter leakage current IGES VCE=0V,VGE=20V - - 100 nA Transconductance gfs VCE=20V,IC=20.0A - 10.9 - S V V 40.0 µA 1500.0 ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified Parameter Symbol Conditions Value Unit min. typ. max. - 1100 - - 70 - - 32 - - 120.0 - nC - 13.0 - nH - A DynamicCharacteristic Input capacitance Cies Output capacitance Coes Reverse transfer capacitance Cres Gate charge QG Internal emitter inductance measured 5mm (0.197 in.) from case LE Short circuit collector current Max. 1000 short circuits IC(SC) Time between short circuits: ≥ 1.0s VCE=25V,VGE=0V,f=1MHz VCC=480V,IC=20.0A, VGE=15V VGE=15.0V,VCC≤400V, tSC≤5µs Tvj=150°C 5 - pF 120 Rev.2.2,2014-03-12 IKW20N60H3 Highspeedswitchingseriesthirdgeneration SwitchingCharacteristic,InductiveLoad Parameter Symbol Conditions Value Unit min. typ. max. - 17 - ns - 23 - ns - 194 - ns - 11 - ns - 0.56 - mJ - 0.24 - mJ - 0.80 - mJ - 112 - ns - 0.39 - µC - 11.0 - A - -750 - A/µs IGBTCharacteristic,atTvj=25°C Turn-on delay time td(on) Rise time tr Turn-off delay time td(off) Fall time tf Turn-on energy Eon Turn-off energy Eoff Total switching energy Ets Diode reverse recovery time trr Diode reverse recovery charge Qrr Diode peak reverse recovery current Irrm Diode peak rate of fall of reverse recoverycurrentduringtb Tvj=25°C, VCC=400V,IC=20.0A, VGE=0.0/15.0V, rG=14.6Ω,Lσ=75nH, Cσ=30pF Lσ,CσfromFig.E Energy losses include “tail” and diode reverse recovery. Tvj=25°C, VR=400V, IF=10.0A, diF/dt=1000A/µs dirr/dt SwitchingCharacteristic,InductiveLoad Parameter Symbol Conditions Value Unit min. typ. max. - 16 - ns - 21 - ns - 227 - ns - 14 - ns - 0.71 - mJ - 0.36 - mJ - 1.07 - mJ - 191 - ns - 0.91 - µC - 14.2 - A - -500 - A/µs IGBTCharacteristic,atTvj=175°C Turn-on delay time td(on) Rise time tr Turn-off delay time td(off) Fall time tf Turn-on energy Eon Turn-off energy Eoff Total switching energy Ets Diode reverse recovery time trr Diode reverse recovery charge Qrr Diode peak reverse recovery current Irrm Diode peak rate of fall of reverse recoverycurrentduringtb Tvj=175°C, VCC=400V,IC=20.0A, VGE=0.0/15.0V, rG=14.6Ω,Lσ=75nH, Cσ=30pF Lσ,CσfromFig.E Energy losses include “tail” and diode reverse recovery. Tvj=175°C, VR=400V, IF=10.0A, diF/dt=1000A/µs dirr/dt 6 Rev.2.2,2014-03-12 IKW20N60H3 Highspeedswitchingseriesthirdgeneration 60 100 IC,COLLECTORCURRENT[A] IC,COLLECTORCURRENT[A] 50 40 30 TC=80° TC=110° 20 TC=80° TC=110° tp=1µs 10 10µs 50µs 100µs 200µs 500µs 1 DC 10 0 1 10 100 0.1 1000 1 f,SWITCHINGFREQUENCY[kHz] 10 100 1000 VCE,COLLECTOR-EMITTERVOLTAGE[V] Figure 1. Collectorcurrentasafunctionofswitching frequency (Tj≤175°C,D=0.5,VCE=400V,VGE=15/0V, rG=14,6Ω) Figure 2. Forwardbiassafeoperatingarea (D=0,TC=25°C,Tj≤175°C;VGE=15V) 180 40 160 IC,COLLECTORCURRENT[A] Ptot,POWERDISSIPATION[W] 140 120 100 80 60 40 30 20 10 20 0 25 50 75 100 125 150 0 175 TC,CASETEMPERATURE[°C] 25 50 75 100 125 150 175 TC,CASETEMPERATURE[°C] Figure 3. Powerdissipationasafunctionofcase temperature (Tj≤175°C) Figure 4. Collectorcurrentasafunctionofcase temperature (VGE≥15V,Tj≤175°C) 7 Rev.2.2,2014-03-12 IKW20N60H3 Highspeedswitchingseriesthirdgeneration 80 80 VGE=20V 70 VGE=20V 70 60 17V IC,COLLECTORCURRENT[A] IC,COLLECTORCURRENT[A] 17V 15V 13V 50 11V 9V 40 7V 30 5V 20 10 0 60 15V 13V 50 11V 9V 40 7V 30 5V 20 10 0 2 4 0 6 0 VCE,COLLECTOR-EMITTERVOLTAGE[V] Figure 5. Typicaloutputcharacteristic (Tj=25°C) 6 8 4.0 VCE(sat),COLLECTOR-EMITTERSATURATION[V] Tj=25°C Tj=175°C 60 IC,COLLECTORCURRENT[A] 4 Figure 6. Typicaloutputcharacteristic (Tj=175°C) 70 50 40 30 20 10 0 2 VCE,COLLECTOR-EMITTERVOLTAGE[V] 5 6 7 8 9 10 11 IC=10A IC=20A IC=40A 3.5 3.0 2.5 2.0 1.5 1.0 12 VGE,GATE-EMITTERVOLTAGE[V] 0 25 50 75 100 125 150 175 Tj,JUNCTIONTEMPERATURE[°C] Figure 7. Typicaltransfercharacteristic (VCE=20V) Figure 8. Typicalcollector-emittersaturationvoltageas afunctionofjunctiontemperature (VGE=15V) 8 Rev.2.2,2014-03-12 IKW20N60H3 Highspeedswitchingseriesthirdgeneration 1000 td(off) tf td(on) tr t,SWITCHINGTIMES[ns] t,SWITCHINGTIMES[ns] td(off) tf td(on) tr 100 10 1 4 8 12 16 20 24 28 32 36 100 10 40 5 10 IC,COLLECTORCURRENT[A] 15 20 25 30 35 40 45 50 rG,GATERESISTOR[Ω] Figure 9. Typicalswitchingtimesasafunctionof collectorcurrent (ind.load,Tj=175°C,VCE=400V,VGE=15/0V, rG=14,6Ω,testcircuitinFig.E) Figure 10. Typicalswitchingtimesasafunctionofgate resistor (ind.load,Tj=175°C,VCE=400V,VGE=15/0V, IC=20A,testcircuitinFig.E) td(off) tf td(on) tr 100 t,SWITCHINGTIMES[ns] VGE(th),GATE-EMITTERTHRESHOLDVOLTAGE[V] 6 10 1 0 25 50 75 100 125 150 typ. min. max. 5 4 3 2 175 Tj,JUNCTIONTEMPERATURE[°C] 0 25 50 75 100 125 150 175 Tj,JUNCTIONTEMPERATURE[°C] Figure 11. Typicalswitchingtimesasafunctionof junctiontemperature (ind.load,VCE=400V,VGE=15/0V,IC=20A, rG=14,6Ω,testcircuitinFig.E) Figure 12. Gate-emitterthresholdvoltageasafunction ofjunctiontemperature (IC=0.29mA) 9 Rev.2.2,2014-03-12 IKW20N60H3 Highspeedswitchingseriesthirdgeneration 3.0 2.00 Eoff Eon Ets 1.75 2.5 E,SWITCHINGENERGYLOSSES[mJ] E,SWITCHINGENERGYLOSSES[mJ] Eoff Eon Ets 2.0 1.5 1.0 0.5 1.50 1.25 1.00 0.75 0.50 0.25 0.0 4 8 12 16 20 24 28 32 36 0.00 40 5 10 15 IC,COLLECTORCURRENT[A] Figure 13. Typicalswitchingenergylossesasa functionofcollectorcurrent (ind.load,Tj=175°C,VCE=400V,VGE=15/0V, rG=14,6Ω,testcircuitinFig.E) 30 35 40 45 50 1.50 Eoff Eon Ets E,SWITCHINGENERGYLOSSES[mJ] Eoff Eon Ets E,SWITCHINGENERGYLOSSES[mJ] 25 Figure 14. Typicalswitchingenergylossesasa functionofgateresistor (ind.load,Tj=175°C,VCE=400V,VGE=15/0V, IC=20A,testcircuitinFig.E) 1.25 1.00 0.75 0.50 0.25 0.00 20 rG,GATERESISTOR[Ω] 0 25 50 75 100 125 150 1.25 1.00 0.75 0.50 0.25 0.00 200 175 Tj,JUNCTIONTEMPERATURE[°C] 250 300 350 400 450 VCE,COLLECTOR-EMITTERVOLTAGE[V] Figure 15. Typicalswitchingenergylossesasa functionofjunctiontemperature (indload,VCE=400V,VGE=15/0V,IC=20A, rG=14,6Ω,testcircuitinFig.E) Figure 16. Typicalswitchingenergylossesasa functionofcollectoremittervoltage (ind.load,Tj=175°C,VGE=15/0V,IC=20A, rG=14,6Ω,testcircuitinFig.E) 10 Rev.2.2,2014-03-12 IKW20N60H3 Highspeedswitchingseriesthirdgeneration 16 120V 480V 14 12 C,CAPACITANCE[pF] VGE,GATE-EMITTERVOLTAGE[V] 1000 10 8 6 Cies Coes Cres 100 4 2 0 0 20 40 60 80 100 120 10 140 0 QGE,GATECHARGE[nC] Figure 17. Typicalgatecharge (IC=20A) 30 15 tSC,SHORTCIRCUITWITHSTANDTIME[µs] IC(SC),SHORTCIRCUITCOLLECTORCURRENT[A] 20 Figure 18. Typicalcapacitanceasafunctionof collector-emittervoltage (VGE=0V,f=1MHz) 300 250 200 150 100 50 10 VCE,COLLECTOR-EMITTERVOLTAGE[V] 10 12 14 16 18 12 9 6 3 0 20 VGE,GATE-EMITTERVOLTAGE[V] 10 11 12 13 14 15 VGE,GATE-EMITTERVOLTAGE[V] Figure 19. Typicalshortcircuitcollectorcurrentasa functionofgate-emittervoltage (VCE≤400V,startatTj=25°C) Figure 20. Shortcircuitwithstandtimeasafunctionof gate-emittervoltage (VCE≤400V,startatTj≤150°C) 11 Rev.2.2,2014-03-12 IKW20N60H3 Highspeedswitchingseriesthirdgeneration ZthJC,TRANSIENTTHERMALIMPEDANCE[K/W] ZthJC,TRANSIENTTHERMALIMPEDANCE[K/W] 1 D=0.5 0.2 0.1 0.1 0.05 0.02 0.01 single pulse 0.01 1 D=0.5 0.2 0.1 0.05 0.1 0.02 0.01 single pulse 0.01 i: 1 2 3 4 ri[K/W]: 0.07041042 0.3070851 0.3198984 0.1871538 τi[s]: 9.6E-5 6.8E-4 0.01084623 0.06925485 0.001 1E-6 1E-5 1E-4 0.001 0.01 0.1 i: 1 2 3 4 ri[K/W]: 0.4398 0.6662 0.4734 0.3169 τi[s]: 1.3E-4 1.1E-3 7.1E-3 0.04629 0.001 1E-7 1 1E-6 tp,PULSEWIDTH[s] 1E-5 1E-4 0.001 0.01 0.1 1 tp,PULSEWIDTH[s] Figure 21. IGBTtransientthermalimpedance (D=tp/T) Figure 22. Diodetransientthermalimpedanceasa functionofpulsewidth (D=tp/T) 250 1.00 Qrr,REVERSERECOVERYCHARGE[µC] trr,REVERSERECOVERYTIME[ns] Tj=25°C, IF = 20A Tj=175°C, IF = 20A 200 150 100 50 600 800 1000 1200 1400 1600 diF/dt,DIODECURRENTSLOPE[A/µs] 0.75 Tj=25°C, IF = 20A Tj=175°C, IF = 20A 0.50 0.25 0.00 800 900 1000 1100 1200 1300 1400 1500 1600 diF/dt,DIODECURRENTSLOPE[A/µs] Figure 23. Typicalreverserecoverytimeasafunction ofdiodecurrentslope (VR=400V) 12 Figure 24. Typicalreverserecoverychargeasa functionofdiodecurrentslope (VR=400V) Rev.2.2,2014-03-12 IKW20N60H3 Highspeedswitchingseriesthirdgeneration 18 0 Tj=25°C, IF = 20A Tj=175°C, IF = 20A -200 16 dIrr/dt,diodepeakrateoffallofIrr[A/µs] Irr,REVERSERECOVERYCURRENT[A] Tj=25°C, IF = 20A Tj=175°C, IF = 20A 14 12 10 -400 -600 -800 -1000 8 -1200 6 800 900 -1400 800 1000 1100 1200 1300 1400 1500 1600 diF/dt,DIODECURRENTSLOPE[A/µs] 900 1000 1100 1200 1300 1400 1500 1600 diF/dt,DIODECURRENTSLOPE[A/µs] Figure 25. Typicalreverserecoverycurrentasa functionofdiodecurrentslope (VR=400V) Figure 26. Typicaldiodepeakrateoffallofreverse recoverycurrentasafunctionofdiode currentslope (VR=400V) 40 2.50 Tj=25°C Tj=175°C IF=5A IF=10A IF=20A 35 30 VF,FORWARDVOLTAGE[V] IF,FORWARDCURRENT[A] 2.25 25 20 15 10 2.00 1.75 1.50 1.25 5 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 1.00 3.5 VF,FORWARDVOLTAGE[V] 0 25 50 75 100 125 150 175 Tj,JUNCTIONTEMPERATURE[°C] Figure 27. Typicaldiodeforwardcurrentasafunction offorwardvoltage 13 Figure 28. Typicaldiodeforwardvoltageasafunction ofjunctiontemperature Rev.2.2,2014-03-12 IKW20N60H3 Highspeedswitchingseriesthirdgeneration PG-TO247-3 14 Rev.2.2,2014-03-12 IKW20N60H3 Highspeedswitchingseriesthirdgeneration vGE(t) 90% VGE a a b b t iC(t) 90% IC 90% IC 10% IC 10% IC t vCE(t) t td(off) tf td(on) t tr vGE(t) 90% VGE 10% VGE t iC(t) 2% IC t vCE(t) 2% VCE t1 t2 t3 t4 t 15 Rev.2.2,2014-03-12 IKW20N60H3 Highspeedswitchingseriesthirdgeneration RevisionHistory IKW20N60H3 Revision:2014-03-12,Rev.2.2 Previous Revision Revision Date Subjects (major changes since last revision) 1.1 2010-02-01 - 1.2 2010-07-26 Preliminary datasheet 2.1 2013-12-09 New value for IRmax limit at 175°C 2.2 2014-03-12 Max ratings Vce, Tvj ≥ 25°C WeListentoYourComments Anyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall? Yourfeedbackwillhelpustocontinuouslyimprovethequalityofthisdocument. Pleasesendyourproposal(includingareferencetothisdocument)to:[email protected] Publishedby InfineonTechnologiesAG 81726Munich,Germany 81726München,Germany ©2014InfineonTechnologiesAG AllRightsReserved. LegalDisclaimer Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics. Withrespecttoanyexamplesorhintsgivenherein,anytypicalvaluesstatedhereinand/oranyinformationregardingthe applicationofthedevice,InfineonTechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind, includingwithoutlimitation,warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty. Information Forfurtherinformationontechnology,deliverytermsandconditionsandprices,pleasecontactthenearestInfineon TechnologiesOffice(www.infineon.com). Warnings Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesin question,pleasecontactthenearestInfineonTechnologiesOffice. TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystems and/orautomotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineon Technologies,ifafailureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support, automotive,aviationandaerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Life supportdevicesorsystemsareintendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustain and/orprotecthumanlife.Iftheyfail,itisreasonabletoassumethatthehealthoftheuserorotherpersonsmaybe endangered. 16 Rev.2.2,2014-03-12