IGBT HighspeedDuoPack:IGBTinTrenchandFieldstoptechnology withsoft,fastrecoveryanti-paralleldiode IKW50N60H3 600Vhighspeedswitchingseriesthirdgeneration Datasheet IndustrialPowerControl IKW50N60H3 Highspeedswitchingseriesthirdgeneration HighspeedIGBTinTrenchandFieldstoptechnology Features: C TRENCHSTOPTMtechnologyoffering •verylowVCEsat •lowEMI •Verysoft,fastrecoveryanti-paralleldiode •maximumjunctiontemperature175°C •qualifiedaccordingtoJEDECfortargetapplications •Pb-freeleadplating;RoHScompliant •completeproductspectrumandPSpiceModels: http://www.infineon.com/igbt/ G E Applications: •uninterruptiblepowersupplies •weldingconverters •converterswithhighswitchingfrequency G C E KeyPerformanceandPackageParameters Type IKW50N60H3 VCE IC VCEsat,Tvj=25°C Tvjmax Marking Package 600V 50A 1.85V 175°C K50H603 PG-TO247-3 2 Rev.2.2,2014-03-12 IKW50N60H3 Highspeedswitchingseriesthirdgeneration TableofContents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Electrical Characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14 Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16 3 Rev.2.2,2014-03-12 IKW50N60H3 Highspeedswitchingseriesthirdgeneration Maximumratings Parameter Symbol Value Unit Collector-emittervoltage,Tvj≥25°C VCE 600 V DCcollectorcurrent,limitedbyTvjmax TC=25°C TC=100°C IC 100.0 50.0 A Pulsedcollectorcurrent,tplimitedbyTvjmax ICpuls 200.0 A Turn off safe operating area VCE≤600V,Tvj≤175°C,tp=1µs - 200.0 A Diodeforwardcurrent,limitedbyTvjmax TC=25°C TC=100°C IF 60.0 30.0 A Diodepulsedcurrent,tplimitedbyTvjmax IFpuls 200.0 A Gate-emitter voltage VGE ±20 V Short circuit withstand time VGE=15.0V,VCC≤400V Allowed number of short circuits < 1000 Time between short circuits: ≥ 1.0s Tvj=150°C tSC PowerdissipationTC=25°C PowerdissipationTC=100°C Ptot 333.0 167.0 W Operating junction temperature Tvj -40...+175 °C Storage temperature Tstg -55...+150 °C µs 5 Soldering temperature, wave soldering 1.6 mm (0.063 in.) from case for 10s °C 260 Mounting torque, M3 screw Maximum of mounting processes: 3 M 0.6 Nm ThermalResistance Parameter Characteristic Symbol Conditions Max.Value Unit IGBT thermal resistance, junction - case Rth(j-c) 0.45 K/W Diode thermal resistance, junction - case Rth(j-c) 1.05 K/W Thermal resistance junction - ambient Rth(j-a) 40 K/W 4 Rev.2.2,2014-03-12 IKW50N60H3 Highspeedswitchingseriesthirdgeneration ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified Parameter Symbol Conditions Value min. typ. max. 600 - - VGE=15.0V,IC=50.0A Tvj=25°C Tvj=125°C Tvj=175°C - 1.85 2.10 2.25 2.30 - - 1.65 1.67 1.65 2.05 - 4.1 5.1 5.7 Unit StaticCharacteristic Collector-emitter breakdown voltage V(BR)CES VGE=0V,IC=2.00mA Collector-emitter saturation voltage VCEsat V V Diode forward voltage VF VGE=0V,IF=30.0A Tvj=25°C Tvj=125°C Tvj=175°C Gate-emitter threshold voltage VGE(th) IC=0.80mA,VCE=VGE Zero gate voltage collector current ICES VCE=600V,VGE=0V Tvj=25°C Tvj=175°C - - Gate-emitter leakage current IGES VCE=0V,VGE=20V - - 100 nA Transconductance gfs VCE=20V,IC=50.0A - 30.0 - S V V 40.0 µA 3500.0 ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified Parameter Symbol Conditions Value Unit min. typ. max. - 2960 - - 116 - - 96 - - 315.0 - nC - 13.0 - nH - A DynamicCharacteristic Input capacitance Cies Output capacitance Coes Reverse transfer capacitance Cres Gate charge QG Internal emitter inductance measured 5mm (0.197 in.) from case LE Short circuit collector current Max. 1000 short circuits IC(SC) Time between short circuits: ≥ 1.0s VCE=25V,VGE=0V,f=1MHz VCC=480V,IC=50.0A, VGE=15V VGE=15.0V,VCC≤400V, tSC≤5µs Tvj=150°C 5 - pF 330 Rev.2.2,2014-03-12 IKW50N60H3 Highspeedswitchingseriesthirdgeneration SwitchingCharacteristic,InductiveLoad Parameter Symbol Conditions Value Unit min. typ. max. - 23 - ns - 37 - ns - 235 - ns - 24 - ns - 1.45 - mJ - 0.91 - mJ - 2.36 - mJ - 130 - ns - 0.88 - µC - 16.9 - A - -598 - A/µs IGBTCharacteristic,atTvj=25°C Turn-on delay time td(on) Rise time tr Turn-off delay time td(off) Fall time tf Turn-on energy Eon Turn-off energy Eoff Total switching energy Ets Diode reverse recovery time trr Diode reverse recovery charge Qrr Diode peak reverse recovery current Irrm Diode peak rate of fall of reverse recoverycurrentduringtb Tvj=25°C, VCC=400V,IC=50.0A, VGE=0.0/15.0V, rG=7.0Ω,Lσ=90nH, Cσ=60pF Lσ,CσfromFig.E Energy losses include “tail” and diode reverse recovery. Tvj=25°C, VR=400V, IF=30.0A, diF/dt=1000A/µs dirr/dt SwitchingCharacteristic,InductiveLoad Parameter Symbol Conditions Value Unit min. typ. max. - 23 - ns - 31 - ns - 273 - ns - 24 - ns - 1.42 - mJ - 1.13 - mJ - 2.55 - mJ - 217 - ns - 2.40 - µC - 22.9 - A - -307 - A/µs IGBTCharacteristic,atTvj=175°C Turn-on delay time td(on) Rise time tr Turn-off delay time td(off) Fall time tf Turn-on energy Eon Turn-off energy Eoff Total switching energy Ets Diode reverse recovery time trr Diode reverse recovery charge Qrr Diode peak reverse recovery current Irrm Diode peak rate of fall of reverse recoverycurrentduringtb Tvj=175°C, VCC=400V,IC=50.0A, VGE=0.0/15.0V, rG=7.0Ω,Lσ=90nH, Cσ=60pF Lσ,CσfromFig.E Energy losses include “tail” and diode reverse recovery. Tvj=175°C, VR=400V, IF=30.0A, diF/dt=1000A/µs dirr/dt 6 Rev.2.2,2014-03-12 IKW50N60H3 Highspeedswitchingseriesthirdgeneration 140 100 IC,COLLECTORCURRENT[A] IC,COLLECTORCURRENT[A] 120 100 80 60 40 TC=80° tp=1µs 10µs 10 50µs 100µs 200µs 500µs 1 DC TC=110° 20 TC=80° TC=110° 0 1 10 100 0.1 1000 1 f,SWITCHINGFREQUENCY[kHz] 10 100 1000 VCE,COLLECTOR-EMITTERVOLTAGE[V] Figure 1. Collectorcurrentasafunctionofswitching frequency (Tj≤175°C,D=0.5,VCE=400V,VGE=15/0V, rG=7Ω) Figure 2. Forwardbiassafeoperatingarea (D=0,TC=25°C,Tj≤175°C;VGE=15V) 350 100 90 300 IC,COLLECTORCURRENT[A] Ptot,POWERDISSIPATION[W] 80 250 200 150 100 70 60 50 40 30 20 50 10 0 25 50 75 100 125 150 0 175 TC,CASETEMPERATURE[°C] 25 50 75 100 125 150 175 TC,CASETEMPERATURE[°C] Figure 3. Powerdissipationasafunctionofcase temperature (Tj≤175°C) Figure 4. Collectorcurrentasafunctionofcase temperature (VGE≥15V,Tj≤175°C) 7 Rev.2.2,2014-03-12 IKW50N60H3 Highspeedswitchingseriesthirdgeneration 200 200 VGE=20V 175 VGE=20V 175 150 17V IC,COLLECTORCURRENT[A] IC,COLLECTORCURRENT[A] 17V 15V 13V 125 11V 9V 100 7V 75 5V 50 25 0 150 15V 13V 125 11V 9V 100 7V 75 5V 50 25 0 1 2 3 4 5 0 6 0 VCE,COLLECTOR-EMITTERVOLTAGE[V] Figure 5. Typicaloutputcharacteristic (Tj=25°C) 3 4 5 6 3.5 VCE(sat),COLLECTOR-EMITTERSATURATION[V] Tj=25°C Tj=175°C IC,COLLECTORCURRENT[A] 2 Figure 6. Typicaloutputcharacteristic (Tj=175°C) 200 150 100 50 0 1 VCE,COLLECTOR-EMITTERVOLTAGE[V] 5 6 7 8 9 10 11 IC=25A IC=50A IC=100A 3.0 2.5 2.0 1.5 1.0 12 VGE,GATE-EMITTERVOLTAGE[V] 0 25 50 75 100 125 150 175 Tj,JUNCTIONTEMPERATURE[°C] Figure 7. Typicaltransfercharacteristic (VCE=20V) Figure 8. Typicalcollector-emittersaturationvoltageas afunctionofjunctiontemperature (VGE=15V) 8 Rev.2.2,2014-03-12 IKW50N60H3 td(off) tf td(on) tr td(off) tf td(on) tr t,SWITCHINGTIMES[ns] t,SWITCHINGTIMES[ns] Highspeedswitchingseriesthirdgeneration 100 10 10 20 30 40 50 60 70 80 90 100 10 100 0 5 IC,COLLECTORCURRENT[A] 10 15 20 25 rG,GATERESISTOR[Ω] Figure 9. Typicalswitchingtimesasafunctionof collectorcurrent (ind.load,Tj=175°C,VCE=400V,VGE=15/0V, rG=7Ω,testcircuitinFig.E) Figure 10. Typicalswitchingtimesasafunctionofgate resistor (ind.load,Tj=175°C,VCE=400V,VGE=15/0V, IC=50A,testcircuitinFig.E) VGE(th),GATE-EMITTERTHRESHOLDVOLTAGE[V] t,SWITCHINGTIMES[ns] 6.0 td(off) tf td(on) tr 100 10 25 50 75 100 125 150 5.5 5.0 4.5 4.0 3.5 3.0 2.5 2.0 175 Tj,JUNCTIONTEMPERATURE[°C] typ. min. max. 0 25 50 75 100 125 150 175 Tj,JUNCTIONTEMPERATURE[°C] Figure 11. Typicalswitchingtimesasafunctionof junctiontemperature (ind.load,VCE=400V,VGE=15/0V,IC=50A, rG=7Ω,testcircuitinFig.E) Figure 12. Gate-emitterthresholdvoltageasafunction ofjunctiontemperature (IC=0,8mA) 9 Rev.2.2,2014-03-12 IKW50N60H3 Highspeedswitchingseriesthirdgeneration 8 5 Eoff Eon Ets E,SWITCHINGENERGYLOSSES[mJ] E,SWITCHINGENERGYLOSSES[mJ] 7 Eoff Eon Ets 6 5 4 3 2 4 3 2 1 1 0 10 20 30 40 50 60 70 80 90 0 100 2 6 IC,COLLECTORCURRENT[A] Figure 13. Typicalswitchingenergylossesasa functionofcollectorcurrent (ind.load,Tj=175°C,VCE=400V,VGE=15/0V, rG=7Ω,testcircuitinFig.E) 18 22 3.5 Eoff Eon Ets 3.0 2.5 E,SWITCHINGENERGYLOSSES[mJ] E,SWITCHINGENERGYLOSSES[mJ] 14 Figure 14. Typicalswitchingenergylossesasa functionofgateresistor (ind.load,Tj=175°C,VCE=400V,VGE=15/0V, IC=50A,testcircuitinFig.E) 3.0 2.0 1.5 1.0 0.5 0.0 10 rG,GATERESISTOR[Ω] Eoff Eon Ets 2.5 2.0 1.5 1.0 0.5 25 50 75 100 125 150 0.0 200 175 Tj,JUNCTIONTEMPERATURE[°C] 250 300 350 400 450 VCE,COLLECTOR-EMITTERVOLTAGE[V] Figure 15. Typicalswitchingenergylossesasa functionofjunctiontemperature (indload,VCE=400V,VGE=15/0V,IC=50A, rG=7Ω,testcircuitinFig.E) Figure 16. Typicalswitchingenergylossesasa functionofcollectoremittervoltage (ind.load,Tj=175°C,VGE=15/0V,IC=50A, rG=7Ω,testcircuitinFig.E) 10 Rev.2.2,2014-03-12 IKW50N60H3 Highspeedswitchingseriesthirdgeneration 16 120V 480V 12 1000 C,CAPACITANCE[pF] VGE,GATE-EMITTERVOLTAGE[V] 14 10 8 6 Cies Coes Cres 100 4 2 0 0 50 100 150 200 250 300 10 350 0 QGE,GATECHARGE[nC] Figure 17. Typicalgatecharge (IC=50A) 30 15 tSC,SHORTCIRCUITWITHSTANDTIME[µs] IC(SC),SHORTCIRCUITCOLLECTORCURRENT[A] 20 Figure 18. Typicalcapacitanceasafunctionof collector-emittervoltage (VGE=0V,f=1MHz) 750 650 550 450 350 250 150 10 VCE,COLLECTOR-EMITTERVOLTAGE[V] 10 12 14 16 18 12 9 6 3 0 20 VGE,GATE-EMITTERVOLTAGE[V] 10 11 12 13 14 15 VGE,GATE-EMITTERVOLTAGE[V] Figure 19. Typicalshortcircuitcollectorcurrentasa functionofgate-emittervoltage (VCE≤400V,startatTj=25°C) Figure 20. Shortcircuitwithstandtimeasafunctionof gate-emittervoltage (VCE≤400V,startatTj≤150°C) 11 Rev.2.2,2014-03-12 IKW50N60H3 D=0.5 0.2 0.1 1 ZthJC,TRANSIENTTHERMALIMPEDANCE[K/W] ZthJC,TRANSIENTTHERMALIMPEDANCE[K/W] Highspeedswitchingseriesthirdgeneration 0.1 0.05 0.02 0.01 single pulse 0.01 D=0.5 0.2 0.1 0.02 0.01 single pulse 0.01 i: 1 2 3 4 5 ri[K/W]: 7.0E-3 0.03736378 0.09205027 0.1299574 0.1835461 τi[s]: 4.4E-5 1.0E-4 7.2E-4 8.3E-3 0.07425315 0.001 1E-6 1E-5 1E-4 0.001 0.01 0.1 i: 1 2 3 4 5 ri[K/W]: 0.04915956 0.2254532 0.3125229 0.2677344 0.1951733 τi[s]: 7.5E-6 2.2E-4 2.3E-3 0.01546046 0.1078904 0.001 1E-7 1 tp,PULSEWIDTH[s] 1E-5 1E-4 0.001 0.01 0.1 1 Figure 22. Diodetransientthermalimpedanceasa functionofpulsewidth (D=tp/T) 300 3.0 Tj=25°C, IF = 50A Tj=175°C, IF = 50A Tj=25°C, IF = 50A Tj=175°C, IF = 50A Qrr,REVERSERECOVERYCHARGE[µC] 250 trr,REVERSERECOVERYTIME[ns] 1E-6 tp,PULSEWIDTH[s] Figure 21. IGBTtransientthermalimpedance (D=tp/T) 200 150 100 50 0 800 0.05 0.1 900 1000 1100 1200 diF/dt,DIODECURRENTSLOPE[A/µs] 2.5 2.0 1.5 1.0 0.5 0.0 800 900 1000 1100 1200 diF/dt,DIODECURRENTSLOPE[A/µs] Figure 23. Typicalreverserecoverytimeasafunction ofdiodecurrentslope (VR=400V) 12 Figure 24. Typicalreverserecoverychargeasa functionofdiodecurrentslope (VR=400V) Rev.2.2,2014-03-12 IKW50N60H3 Highspeedswitchingseriesthirdgeneration 30 0 Tj=25°C, IF = 50A Tj=175°C, IF = 50A Tj=25°C, IF = 50A Tj=175°C, IF = 50A dIrr/dt,diodepeakrateoffallofIrr[A/µs] Irr,REVERSERECOVERYCURRENT[A] -100 26 22 18 14 -200 -300 -400 -500 -600 10 800 900 1000 1100 -700 800 1200 diF/dt,DIODECURRENTSLOPE[A/µs] 900 1000 1100 1200 diF/dt,DIODECURRENTSLOPE[A/µs] Figure 25. Typicalreverserecoverycurrentasa functionofdiodecurrentslope (VR=400V) Figure 26. Typicaldiodepeakrateoffallofreverse recoverycurrentasafunctionofdiode currentslope (VR=400V) 100 2.6 Tj=25°C Tj=175°C 90 IF=15A IF=30A IF=60A 2.4 VF,FORWARDVOLTAGE[V] IF,FORWARDCURRENT[A] 80 70 60 50 40 30 2.2 2.0 1.8 1.6 1.4 20 1.2 10 0 0.0 0.5 1.0 1.5 2.0 1.0 2.5 VF,FORWARDVOLTAGE[V] 0 25 50 75 100 125 150 175 Tj,JUNCTIONTEMPERATURE[°C] Figure 27. Typicaldiodeforwardcurrentasafunction offorwardvoltage 13 Figure 28. Typicaldiodeforwardvoltageasafunction ofjunctiontemperature Rev.2.2,2014-03-12 IKW50N60H3 Highspeedswitchingseriesthirdgeneration PG-TO247-3 14 Rev.2.2,2014-03-12 IKW50N60H3 Highspeedswitchingseriesthirdgeneration vGE(t) 90% VGE a a b b t iC(t) 90% IC 90% IC 10% IC 10% IC t vCE(t) t td(off) tf td(on) t tr vGE(t) 90% VGE 10% VGE t iC(t) 2% IC t vCE(t) 2% VCE t1 t2 t3 t4 t 15 Rev.2.2,2014-03-12 IKW50N60H3 Highspeedswitchingseriesthirdgeneration RevisionHistory IKW50N60H3 Revision:2014-03-12,Rev.2.2 Previous Revision Revision Date Subjects (major changes since last revision) 1.1 2010-07-26 Preliminary datasheet 2.1 2013-12-10 New value ICES max limit at 175°C 2.2 2014-03-12 Max ratings Vce, Tvj ≥ 25°C WeListentoYourComments Anyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall? Yourfeedbackwillhelpustocontinuouslyimprovethequalityofthisdocument. Pleasesendyourproposal(includingareferencetothisdocument)to:[email protected] Publishedby InfineonTechnologiesAG 81726Munich,Germany 81726München,Germany ©2014InfineonTechnologiesAG AllRightsReserved. LegalDisclaimer Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics. Withrespecttoanyexamplesorhintsgivenherein,anytypicalvaluesstatedhereinand/oranyinformationregardingthe applicationofthedevice,InfineonTechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind, includingwithoutlimitation,warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty. Information Forfurtherinformationontechnology,deliverytermsandconditionsandprices,pleasecontactthenearestInfineon TechnologiesOffice(www.infineon.com). Warnings Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesin question,pleasecontactthenearestInfineonTechnologiesOffice. TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystems and/orautomotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineon Technologies,ifafailureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support, automotive,aviationandaerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Life supportdevicesorsystemsareintendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustain and/orprotecthumanlife.Iftheyfail,itisreasonabletoassumethatthehealthoftheuserorotherpersonsmaybe endangered. 16 Rev.2.2,2014-03-12