IGP01N120H2

IGP01N120H2
IGD01N120H2
HighSpeed 2-Technology
C
•
•
Designed for:
- SMPS
- Lamp Ballast
- ZVS-Converter
- optimised for soft-switching / resonant topologies
G
E
nd
2 generation HighSpeed-Technology
for 1200V applications offers:
- loss reduction in resonant circuits
- temperature stable behavior
- parallel switching capability
- tight parameter distribution
- Eoff optimized for IC =1A
PG-TO-252-3-1
PG-TO-220-3-1
2
• Qualified according to JEDEC for target applications
• Pb-free lead plating; RoHS compliant
• Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/
Type
VCE
IC
Eoff
Tj
Marking
IGP01N120H2
1200V
1A
0.09mJ
150°C
G01H1202
PG-TO-220-3-1
IGD01N120H2
1200V
1A
0.09mJ
150°C
G01H1202
G1H1202
PG-TO-252-3-11
Package
Maximum Ratings
Parameter
Symbol
Value
Unit
Collector-emitter voltage
VCE
1200
V
Triangular collector current
IC
A
TC = 25°C, f = 140kHz
3.2
TC = 100°C, f = 140kHz
1.3
Pulsed collector current, tp limited by Tjmax
ICpul s
3.5
Turn off safe operating area
-
3.5
Gate-emitter voltage
VGE
±20
V
Power dissipation
Ptot
28
W
-40...+150
°C
VCE ≤ 1200V, Tj ≤ 150°C
TC = 25°C
Operating junction and storage temperature
Tj , Tstg
Soldering temperature
PG-TO-252: Reflow soldering, MSL3
Others: wavesoldering, 1.6 mm (0.063 in.) from case for 10s
-
2
260
260
J-STD-020 and JESD-022
Power Semiconductors
1
Rev. 2.4 Sept. 07
IGP01N120H2
IGD01N120H2
Thermal Resistance
Parameter
Symbol
Conditions
Max. Value
Unit
4.5
K/W
Characteristic
RthJC
IGBT thermal resistance,
junction – case
Thermal resistance,
RthJA
PG-TO-220-3-1
62
RthJA
PG-TO-252-3-1
50
junction – ambient
1)
SMD version, device on PCB
Electrical Characteristic, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Value
min.
Typ.
max.
1200
-
-
T j =2 5 °C
-
2.2
2.8
T j =1 5 0° C
-
2.5
-
V G E = 10 V , I C = 1 A,
T j =2 5 °C
-
2.4
-
2.1
3
3.9
Unit
Static Characteristic
Collector-emitter breakdown voltage
V ( B R ) C E S V G E = 0V , I C = 3 00 µA
Collector-emitter saturation voltage
VCE(sat)
V
V G E = 15 V , I C = 1 A
Gate-emitter threshold voltage
VGE(th)
I C = 30 µA , V C E = V G E
Zero gate voltage collector current
ICES
V C E = 12 0 0V , V G E = 0V
µA
T j =2 5 °C
-
-
20
T j =1 5 0° C
-
-
80
Gate-emitter leakage current
IGES
V C E = 0V , V G E =2 0 V
-
-
40
nA
Transconductance
gfs
V C E = 20 V , I C = 1 A
-
0.75
-
S
Input capacitance
Ciss
V C E = 25 V ,
-
91.6
-
pF
Output capacitance
Coss
V G E = 0V ,
-
9.8
-
Reverse transfer capacitance
Crss
f= 1 MH z
-
3.4
-
Gate charge
QGate
V C C = 96 0 V, I C =1 A
-
8.6
-
nC
-
7
-
nH
Dynamic Characteristic
V G E = 15 V
Internal emitter inductance
LE
measured 5mm (0.197 in.) from case
1)
2
Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm (one layer, 70µm thick) copper area for
collector connection. PCB is vertical without blown air.
Power Semiconductors
2
Rev. 2.4 Sept. 07
IGP01N120H2
IGD01N120H2
Switching Characteristic, Inductive Load, at Tj=25 °C
Parameter
Symbol
Conditions
Value
min.
Typ.
max.
-
13
-
-
6.3
-
-
370
-
-
28
-
-
0.08
-
-
0.06
-
-
0.14
-
Unit
IGBT Characteristic
Turn-on delay time
td(on)
Rise time
tr
Turn-off delay time
td(off)
Fall time
tf
Turn-on energy
Eon
Turn-off energy
Eoff
Total switching energy
Ets
T j =2 5 °C ,
V C C = 80 0 V,
I C = 1 A,
V G E = 15 V /0 V ,
R G = 24 1Ω ,
2)
L σ =1 8 0n H,
2)
C σ = 4 0p F
Energy losses include
3)
“tail” and diode
reverse recovery.
ns
mJ
Switching Characteristic, Inductive Load, at Tj=150 °C
Parameter
Symbol
Conditions
Value
min.
Typ.
max.
-
12
-
-
8.9
-
-
450
-
-
43
-
-
0.11
-
-
0.09
-
-
0.2
-
Unit
IGBT Characteristic
Turn-on delay time
td(on)
Rise time
tr
Turn-off delay time
td(off)
Fall time
tf
Turn-on energy
Eon
Turn-off energy
Eoff
Total switching energy
Ets
T j =1 5 0° C
V C C = 80 0 V,
I C = 1 A,
V G E = 15 V /0 V ,
R G = 24 1Ω ,
2)
L σ =1 8 0n H,
2)
C σ = 4 0p F
Energy losses include
4)
“tail” and diode
reverse recovery.
ns
mJ
Switching Energy ZVT, Inductive Load
Parameter
Symbol
Conditions
Value
min.
Typ.
max.
Unit
IGBT Characteristic
Turn-off energy
Eoff
V C C = 80 0 V,
mJ
I C = 1 A,
V G E = 15 V /0 V ,
R G = 24 1Ω ,
2)
C r =1 nF
2 )
4)
T j =2 5 °C
-
0.02
-
T j =1 5 0° C
-
0.044
-
Leakage inductance Lσ and stray capacity Cσ due to dynamic test circuit in figure E
Commutation diode from device IKP01N120H2
Power Semiconductors
3
Rev. 2.4 Sept. 07
IGP01N120H2
IGD01N120H2
10A
5A
t p =1 µs
Ic
2 µs
IC, COLLECTOR CURRENT
IC, COLLECTOR CURRENT
4A
3A
TC=80°C
2A
1A
TC=110°C
Ic
1A
5 µs
20 µs
0,1A
50 µs
200 µs
DC
,01A
0A
10Hz
100Hz
1kHz
10kHz
100kHz
1V
f, SWITCHING FREQUENCY
Figure 1. Collector current as a function of
switching frequency
(Tj ≤ 150°C, D = 0.5, VCE = 800V,
VGE = +15V/0V, RG = 241Ω)
10V
100V
1000V
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 2. Safe operating area
(D = 0, TC = 25°C, Tj ≤ 150°C)
30W
4A
IC, COLLECTOR CURRENT
Ptot, POWER DISSIPATION
25W
20W
15W
10W
5W
0W
25°C
50°C
75°C
100°C
125°C
2A
1A
0A
25°C
150°C
TC, CASE TEMPERATURE
Figure 3. Power dissipation as a function
of case temperature
(Tj ≤ 150°C)
Power Semiconductors
3A
50°C
75°C
100°C
125°C
150°C
TC, CASE TEMPERATURE
Figure 4. Collector current as a function of
case temperature
(VGE ≤ 15V, Tj ≤ 150°C)
4
Rev. 2.4 Sept. 07
5A
5A
4A
4A
IC, COLLECTOR CURRENT
IC, COLLECTOR CURRENT
IGP01N120H2
IGD01N120H2
VGE=15V
3A
12V
10V
8V
6V
2A
1A
0A
0V
1V
2V
3V
4V
IC, COLLECTOR CURRENT
4A
Tj=+150°C
Tj=+25°C
3A
2A
1A
0A
3V
5V
7V
9V
VGE, GATE-EMITTER VOLTAGE
Figure 7. Typical transfer characteristics
(VCE = 20V)
Power Semiconductors
2A
1A
1V
2V
3V
4V
5V
6V
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 6. Typical output characteristics
(Tj = 150°C)
VCE(sat), COLLECTOR-EMITTER SATURATION VOLTAGE
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 5. Typical output characteristics
(Tj = 25°C)
12V
10V
8V
6V
3A
0A
0V
5V
5A
VGE=15V
4V
IC=2A
3V
IC=1A
2V
IC=0.5A
1V
0V
-50°C
0°C
50°C
100°C
150°C
Tj, JUNCTION TEMPERATURE
Figure 8. Typical collector-emitter
saturation voltage as a function of junction
temperature
(VGE = 15V)
5
Rev. 2.4 Sept. 07
IGP01N120H2
IGD01N120H2
1000ns
td(off)
100ns
t, SWITCHING TIMES
t, SWITCHING TIMES
td(off)
100ns
tf
td(on)
tf
10ns
td(on)
tr
10ns
tr
0A
1A
1ns
50Ω
2A
IC, COLLECTOR CURRENT
Figure 9. Typical switching times as a
function of collector current
(inductive load, Tj = 150°C,
VCE = 800V, VGE = +15V/0V, RG = 241Ω,
dynamic test circuit in Fig.E)
100Ω
150Ω
200Ω
RG, GATE RESISTOR
Figure 10. Typical switching times as a
function of gate resistor
(inductive load, Tj = 150°C,
VCE = 800V, VGE = +15V/0V, IC = 1A,
dynamic test circuit in Fig.E)
t, SWITCHING TIMES
td(off)
100ns
tf
td(on)
10ns
0°C
tr
50°C
100°C
150°C
VGE(th), GATE-EMITTER THRESHOLD VOLTAGE
6V
Tj, JUNCTION TEMPERATURE
Figure 11. Typical switching times as a
function of junction temperature
(inductive load, VCE = 800V,
VGE = +15V/0V, IC = 1A, RG = 241Ω,
dynamic test circuit in Fig.E)
Power Semiconductors
5V
4V
3V
max.
typ.
2V
min.
1V
0V
-50°C
0°C
50°C
100°C
150°C
Tj, JUNCTION TEMPERATURE
Figure 12. Gate-emitter threshold voltage
as a function of junction temperature
(IC = 0.03mA)
6
Rev. 2.4 Sept. 07
IGP01N120H2
IGD01N120H2
1
E, SWITCHING ENERGY LOSSES
) Eon and Ets include losses
due to diode recovery.
0.25mJ
Ets
0.4mJ
Eoff
1
Eon
0.2mJ
Ets
1
0.20mJ
0.15mJ
1
Eon
0.10mJ
Eoff
0.0mJ
0A
1A
2A
0.05mJ
50Ω
3A
IC, COLLECTOR CURRENT
Figure 13. Typical switching energy losses
as a function of collector current
(inductive load, Tj = 150°C,
VCE = 800V, VGE = +15V/0V, RG = 241Ω,
dynamic test circuit in Fig.E )
) Eon and Ets include losses
due to diode recovery.
Ets
1
0.15mJ
1
Eon
0.10mJ
0.05mJ
0.00mJ
Eoff
-40°C
25°C
100°C
150°C
200Ω
IC=1A, TJ=150°C
0.04mJ
IC=1A, TJ=25°C
IC=0.3A, TJ=150°C
0.02mJ
IC=0.3A, TJ=25°C
0.00mJ
0V/us
1000V/us
2000V/us
3000V/us
dv/dt, VOLTAGE SLOPE
Tj, JUNCTION TEMPERATURE
Figure 15. Typical switching energy losses
as a function of junction temperature
(inductive load, VCE = 800V,
VGE = +15V/0V, IC = 1A, RG = 241Ω,
dynamic test circuit in Fig.E )
Power Semiconductors
150Ω
0.06mJ
1
0.20mJ
100Ω
RG, GATE RESISTOR
Figure 14. Typical switching energy losses
as a function of gate resistor
(inductive load, Tj = 150°C,
VCE = 800V, VGE = +15V/0V, IC = 1A,
dynamic test circuit in Fig.E )
Eoff, TURN OFF SWITCHING ENERGY LOSS
0.25mJ
E, SWITCHING ENERGY LOSSES
1
) Eon and Ets include losses
due to diode recovery.
1
E, SWITCHING ENERGY LOSSES
0.6mJ
Figure 16. Typical turn off switching energy
loss for soft switching
(dynamic test circuit in Fig. E)
7
Rev. 2.4 Sept. 07
IGP01N120H2
IGD01N120H2
20V
0.2
0
10 K/W
VGE, GATE-EMITTER VOLTAGE
ZthJC, TRANSIENT THERMAL IMPEDANCE
D=0.5
0.1
0.05
R,(K/W)
2.5069
1.1603
0.8327
0.02
-1
10 K/W
0.01
τ, (s)
0.00066
0.00021
0.00426
R1
single pulse
C 1 = τ 1 / R 1 C 2 = τ 2 /R 2
-2
10 K/W
1µs
10µs
R2
100µs
1ms
10ms
UCE=240V
15V
10V
UCE=960V
5V
0V
0nC
100ms
tp, PULSE WIDTH
5nC
10nC
15nC
QGE, GATE CHARGE
Figure 18. Typical gate charge
(IC = 1A)
Figure 17. IGBT transient thermal
impedance as a function of pulse width
(D = tp / T)
1000V
Ciss
10pF
Coss
Crss
0V
10V
20V
0.8A
600V
0.6A
400V
0.4A
0.2A
200V
0.0A
0V
30V
0.0
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 19. Typical capacitance as a
function of collector-emitter voltage
(VGE = 0V, f = 1MHz)
Power Semiconductors
800V
ICE COLLECTOR CURRENT
C, CAPACITANCE
100pF
VCE, COLLECTOR-EMITTER VOLTAGE
1.0A
0.2
0.4
0.6
0.8
1.0
1.2
tp, PULSE WIDTH
Figure 20. Typical turn off behavior, hard
switching
(VGE=15/0V, RG=220Ω, Tj = 150°C,
Dynamic test circuit in Figure E)
8
Rev. 2.4 Sept. 07
IGP01N120H2
IGD01N120H2
1000V
800V
0.8A
600V
0.6A
400V
0.4A
0.2A
200V
ICE COLLECTOR CURRENT
VCE, COLLECTOR-EMITTER VOLTAGE
1.0A
0.0A
0V
0.0
0.4
0.8
1.2
1.6
2.0
tp, PULSE WIDTH
Figure 21. Typical turn off behavior, soft
switching
(VGE=15/0V, RG=220Ω, Tj = 150°C,
Dynamic test circuit in Figure E)
Power Semiconductors
9
Rev. 2.4 Sept. 07
IGP01N120H2
IGD01N120H2
PG-TO220-3-1
Power Semiconductors
10
Rev. 2.4 Sept. 07
IGP01N120H2
IGD01N120H2
P-TO252-3-11
Power Semiconductors
11
Rev. 2.4 Sept. 07
IGP01N120H2
IGD01N120H2
i,v
tr r =tS +tF
diF /dt
Qr r =QS +QF
IF
tS
QS
Ir r m
tr r
tF
QF
10% Ir r m
dir r /dt
90% Ir r m
t
VR
Figure C. Definition of diodes
switching characteristics
τ1
τ2
r1
τn
r2
rn
Tj (t)
p(t)
r2
r1
rn
Figure A. Definition of switching times
TC
Figure D. Thermal equivalent
circuit
½ Lσ
öö
DUT
(Diode)
L
Cσ
Cr
VDC
RG
DUT
(IGBT)
½ Lσ
Figure E. Dynamic test circuit
Leakage inductance Lσ = 180nH,
Stray capacitor Cσ = 40pF,
Relief capacitor Cr = 1nF (only for
ZVT switching)
Figure B. Definition of switching losses
Power Semiconductors
12
Rev. 2.4 Sept. 07
IGP01N120H2
IGD01N120H2
Edition 2006-01
Published by
Infineon Technologies AG
81726 München, Germany
© Infineon Technologies AG 9/13/07.
All Rights Reserved.
Attention please!
The information given in this data sheet shall in no event be regarded as a guarantee of conditions or
characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical
values stated herein and/or any information regarding the application of the device, Infineon Technologies
hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of
non-infringement of intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices please contact your nearest
Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements components may contain dangerous substances. For information on the types
in question please contact your nearest Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or systems with the express
written approval of Infineon Technologies, if a failure of such components can reasonably be expected to
cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or
system. Life support devices or systems are intended to be implanted in the human body, or to support
and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health
of the user or other persons may be endangered.
Power Semiconductors
13
Rev. 2.4 Sept. 07