SKW25N120 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode • 40lower Eoff compared to previous generation • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter G - SMPS • NPT-Technology offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour - parallel switching capability • Pb-free lead plating; RoHS compliant 1 • Qualified according to JEDEC for target applications • Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/ Type SKW25N120 C E PG-TO-247-3-21 (TO-247AC) VCE IC Eoff Tj Marking Package 1200V 25A 2.9mJ 150°C K25N120 PG-TO-247-3-21 Maximum Ratings Parameter Symbol Value Unit Collector-emitter voltage VCE 1200 V DC collector current IC A TC = 25°C 46 TC = 100°C 25 Pulsed collector current, tp limited by Tjmax ICpul s 84 Turn off safe operating area - 84 VCE ≤ 1200V, Tj ≤ 150°C IF Diode forward current TC = 25°C 42 TC = 100°C 25 Diode pulsed current, tp limited by Tjmax IFpul s 80 Gate-emitter voltage VGE ±20 V tSC 10 µs Ptot 313 W -55...+150 °C 2 Short circuit withstand time VGE = 15V, 100V≤VCC ≤1200V, Tj ≤ 150°C Power dissipation TC = 25°C Operating junction and storage temperature Tj , Tstg Soldering temperature, Ts 260 wavesoldering, 1.6mm (0.063 in.) from case for 10s 1 2 J-STD-020 and JESD-022 Allowed number of short circuits: <1000; time between short circuits: >1s. Power Semiconductors 1 Rev. 2_1 Apr 06 SKW25N120 Thermal Resistance Parameter Symbol Conditions Max. Value Unit RthJC 0.4 K/W RthJCD 1.15 Characteristic IGBT thermal resistance, junction – case Diode thermal resistance, junction – case RthJA Thermal resistance, 40 junction – ambient Electrical Characteristic, at Tj = 25 °C, unless otherwise specified Parameter Symbol Conditions Value min. typ. max. 1200 - - 2.5 3.1 3.6 - 3.7 4.3 2.0 2.5 Unit Static Characteristic Collector-emitter breakdown voltage V ( B R ) C E S V G E = 0V , I C = 15 0 0 µA Collector-emitter saturation voltage VCE(sat) V G E = 15 V , I C = 25 A T j =2 5 °C T j =1 5 0° C VF Diode forward voltage V G E = 0V , I F = 2 5 A T j =2 5 °C T j =1 5 0° C - 1.75 3 4 Gate-emitter threshold voltage VGE(th) I C = 10 0 0 µA , VCE=VGE Zero gate voltage collector current ICES V C E =1200V,V G E =0V . V 5 µA T j =2 5 °C - - 350 T j =1 5 0° C - - 1400 - - 100 nA 20 - S pF Gate-emitter leakage current IGES V C E =0V,V G E =20V Transconductance gfs V C E = 20 V , I C = 25 A Input capacitance Ciss V C E = 25 V , - 2150 2600 Output capacitance Coss V G E = 0V , - 260 310 Reverse transfer capacitance Crss f= 1 MH z - 110 130 Gate charge QGate V C C = 96 0 V, I C =2 5 A - 225 300 nC - 13 - nH - 240 - A Dynamic Characteristic V G E = 15 V LE Internal emitter inductance Measured 5mm (0.197 in.) from case 1) Short circuit collector current 1) IC(SC) V G E = 15 V ,t S C ≤ 10 µs 10 0 V≤ V C C ≤ 12 0 0 V, T j ≤ 1 5 0° C Allowed number of short circuits: <1000; time between short circuits: >1s Power Semiconductors 2 Rev. 2_1 Apr 06 SKW25N120 Switching Characteristic, Inductive Load, at Tj=25 °C Parameter Symbol Conditions Value Unit Min. typ. max. - 45 60 - 40 52 - 730 950 - 30 39 - 2.2 2.9 - 1.5 2.0 - 3.7 4.9 90 ns IGBT Characteristic Turn-on delay time td(on) Rise time tr Turn-off delay time td(off) Fall time tf Turn-on energy Eon Turn-off energy Eoff Total switching energy Ets T j =2 5 °C , V C C = 80 0 V, I C = 2 5 A, V G E = 15 /0 V , R G = 22 Ω, 1) L σ =1 8 0n H, 1) C σ = 4 0p F Energy losses include “tail” and diode reverse recovery. ns mJ Anti-Parallel Diode Characteristic Diode reverse recovery time trr T j =2 5 °C , - tS V R = 8 00 V , I F = 2 5 A, - tF d i F / d t =6 5 0 A/ µs - Diode reverse recovery charge Qrr - 1.0 µC Diode peak reverse recovery current Irrm - 20 A Diode peak rate of fall of reverse recovery current during t F d i r r /d t - 470 A/µs Switching Characteristic, Inductive Load, at Tj=150 °C Parameter Symbol Conditions Value Unit Min. typ. max. - 50 60 - 36 43 - 820 990 - 42 50 - 3.8 4.6 - 2.9 3.8 - 6.7 8.4 280 ns IGBT Characteristic Turn-on delay time td(on) Rise time tr Turn-off delay time td(off) Fall time tf Turn-on energy Eon Turn-off energy Eoff Total switching energy Ets T j =1 5 0° C V C C = 80 0 V, I C = 2 5 A, V G E = 15 /0 V , R G = 22 Ω, 1) L σ =1 8 0n H, 1) C σ = 4 0p F Energy losses include “tail” and diode reverse recovery. ns mJ Anti-Parallel Diode Characteristic Diode reverse recovery time trr T j =1 5 0° C - tS V R = 8 00 V , I F = 2 5 A, - tF d i F / d t =7 5 0 A/ µs - Diode reverse recovery charge Qrr - 4.3 µC Diode peak reverse recovery current Irrm - 32 A Diode peak rate of fall of reverse recovery current during t F d i r r /d t - 130 A/µs 1) Leakage inductance Lσ and stray capacity Cσ due to dynamic test circuit in figure E. Power Semiconductors 3 Rev. 2_1 Apr 06 SKW25N120 Ic 100A 100A tp=1µs 80A 60A IC, COLLECTOR CURRENT IC, COLLECTOR CURRENT 15µs TC=80°C 40A TC=110°C 20A 0A 10Hz Ic 100Hz 200µs 1ms 1A DC 0.1A 1kHz 10kHz 1V 100kHz f, SWITCHING FREQUENCY Figure 1. Collector current as a function of switching frequency (Tj ≤ 150°C, D = 0.5, VCE = 800V, VGE = +15V/0V, RG = 22Ω) 100V 1000V 60A 300W 50A 250W IC, COLLECTOR CURRENT Ptot, POWER DISSIPATION 10V VCE, COLLECTOR-EMITTER VOLTAGE Figure 2. Safe operating area (D = 0, TC = 25°C, Tj ≤ 150°C) 350W 200W 150W 100W 40A 30A 20A 10A 50W 0W 25°C 50µs 10A 50°C 75°C 100°C 0A 25°C 125°C TC, CASE TEMPERATURE Figure 3. Power dissipation as a function of case temperature (Tj ≤ 150°C) Power Semiconductors 50°C 75°C 100°C 125°C TC, CASE TEMPERATURE Figure 4. Collector current as a function of case temperature (VGE ≤ 15V, Tj ≤ 150°C) 4 Rev. 2_1 Apr 06 SKW25N120 80A 80A 70A 70A 60A V G E =17V IC, COLLECTOR CURRENT IC, COLLECTOR CURRENT 60A 15V 50A 13V 40A 11V 9V 30A 7V 20A 10A 0A 0V 1V 2V 3V 4V 5V 6V 60A IC, COLLECTOR CURRENT 40A 11V 9V 30A 7V 20A 50A Tj=+150°C Tj=+25°C Tj=-40°C 20A 10A 4V 5V 6V 7V 8V 9V 10V 11V VGE, GATE-EMITTER VOLTAGE Figure 7. Typical transfer characteristics (VCE = 20V) Power Semiconductors 1V 2V 3V 4V 5V 6V 7V VCE, COLLECTOR-EMITTER VOLTAGE Figure 6. Typical output characteristics (Tj = 150°C) VCE(sat), COLLECTOR-EMITTER SATURATION VOLTAGE 70A 0A 3V 13V 0A 0V 7V 80A 30A 15V 50A 10A VCE, COLLECTOR-EMITTER VOLTAGE Figure 5. Typical output characteristics (Tj = 25°C) 40A V G E =17V 6V 5V IC=50A 4V IC=25A 3V IC=12.5A 2V 1V 0V -50°C 0°C 50°C 100°C 150°C Tj, JUNCTION TEMPERATURE Figure 8. Typical collector-emitter saturation voltage as a function of junction temperature (VGE = 15V) 5 Rev. 2_1 Apr 06 SKW25N120 1000ns 1000ns td(off) t, SWITCHING TIMES t, SWITCHING TIMES td(off) tf 100ns td(on) 10ns 0A 100ns td(on) tf tr tr 20A 40A 10ns 0Ω 60A IC, COLLECTOR CURRENT Figure 9. Typical switching times as a function of collector current (inductive load, Tj = 150°C, VCE = 800V, VGE = +15V/0V, RG = 2 2Ω, dynamic test circuit in Fig.E ) 10Ω 20Ω 30Ω 40Ω 50Ω RG, GATE RESISTOR Figure 10. Typical switching times as a function of gate resistor (inductive load, Tj = 150°C, VCE = 800V, VGE = +15V/0V, IC = 25A, dynamic test circuit in Fig.E ) 1000ns t, SWITCHING TIMES td(off) 100ns td(on) tr tf 10ns -50°C 0°C 50°C 100°C VGE(th), GATE-EMITTER THRESHOLD VOLTAGE 6V max. 4V typ. 3V min. 2V 1V 0V -50°C 150°C Tj, JUNCTION TEMPERATURE Figure 11. Typical switching times as a function of junction temperature (inductive load, VCE = 800V, VGE = +15V/0V, IC = 25A, RG = 22Ω, dynamic test circuit in Fig.E ) Power Semiconductors 5V 0°C 50°C 100°C 150°C Tj, JUNCTION TEMPERATURE Figure 12. Gate-emitter threshold voltage as a function of junction temperature (IC = 0.3mA) 6 Rev. 2_1 Apr 06 SKW25N120 25mJ 10mJ 20mJ 15mJ Eon* 10mJ Eoff 5mJ 0mJ 0A 20A 40A *) Eon and Ets include losses due to diode recovery. Ets* E, SWITCHING ENERGY LOSSES E, SWITCHING ENERGY LOSSES *) Eon and Ets include losses due to diode recovery. 8mJ 6mJ Eon* 4mJ IC, COLLECTOR CURRENT Figure 13. Typical switching energy losses as a function of collector current (inductive load, Tj = 150°C, VCE = 800V, VGE = +15V/0V, RG = 2 2Ω, dynamic test circuit in Fig.E ) Eoff 2mJ 0mJ 60A Ets* 0Ω 10Ω 20Ω 30Ω 40Ω 50Ω RG, GATE RESISTOR Figure 14. Typical switching energy losses as a function of gate resistor (inductive load, Tj = 150°C, VCE = 800V, VGE = +15V/0V, IC = 25A, dynamic test circuit in Fig.E ) E, SWITCHING ENERGY LOSSES *) Eon and Ets include losses due to diode recovery. Ets* 6mJ Eon* 4mJ Eoff 2mJ 0mJ -50°C 0°C 50°C 100°C ZthJC, TRANSIENT THERMAL IMPEDANCE 8mJ -1 10 K/W 0.2 0.1 0.05 R,(K/W) 0.07417 0.20899 0.08065 0.03681 -2 10 K/W 0.02 0.01 τ, (s) 0.4990 0.08994 0.00330 0.00038 R1 R2 single pulseC 1 = τ 1 / R 1 C 2 = τ 2 /R 2 -3 10 K/W 1µs 150°C 10µs 100µs 1ms 10ms 100ms 1s tp, PULSE WIDTH Tj, JUNCTION TEMPERATURE Figure 15. Typical switching energy losses as a function of junction temperature (inductive load, VCE = 800V, VGE = +15V/0V, IC = 25A, RG = 22Ω, dynamic test circuit in Fig.E ) Power Semiconductors D=0.5 Figure 16. IGBT transient thermal impedance as a function of pulse width (D = tp / T) 7 Rev. 2_1 Apr 06 SKW25N120 20V 15V 10V C, CAPACITANCE VGE, GATE-EMITTER VOLTAGE Ciss UCE=960V 5V 0V 0nC Coss 100nC 200nC 300nC 10V 20V 30V VCE, COLLECTOR-EMITTER VOLTAGE Figure 18. Typical capacitance as a function of collector-emitter voltage (VGE = 0V, f = 1MHz) 30µs IC(sc), SHORT CIRCUIT COLLECTOR CURRENT 500A 25µs 20µs 15µs 10µs 5µs 0µs 10V Crss 100pF 0V QGE, GATE CHARGE Figure 17. Typical gate charge (IC = 25A) tsc, SHORT CIRCUIT WITHSTAND TIME 1nF 11V 12V 13V 14V 300A 200A 100A 0A 10V 15V VGE, GATE-EMITTER VOLTAGE Figure 19. Short circuit withstand time as a function of gate-emitter voltage (VCE = 1200V, start at Tj = 25°C) Power Semiconductors 400A 12V 14V 16V 18V 20V VGE, GATE-EMITTER VOLTAGE Figure 20. Typical short circuit collector current as a function of gate-emitter voltage (100V≤VCE ≤1200V, TC = 25°C, Tj ≤ 150°C) 8 Rev. 2_1 Apr 06 500ns 5µC 400ns 4µC Qrr, REVERSE RECOVERY CHARGE trr, REVERSE RECOVERY TIME SKW25N120 IF=25A 300ns 200ns IF=12A 100ns 0ns 300A/µs 500A/µs 700A/µs d i F / d t, DIODE CURRENT SLOPE Figure 21. Typical reverse recovery time as a function of diode current slope (VR = 800V, Tj = 150°C, dynamic test circuit in Fig.E ) 30A IF=12A 10A 500A/µs 700A/µs 1µC 500A/µs 700A/µs 900A/µs 300A/µs IF=12A 200A/µs IF=25A 100A/µs 0A/µs 300A/µs 900A/µs d i F / d t, DIODE CURRENT SLOPE Figure 23. Typical reverse recovery current as a function of diode current slope (VR = 800V, Tj = 150°C, dynamic test circuit in Fig.E ) Power Semiconductors OF REVERSE RECOVERY CURRENT IF=25A d i r r /d t, DIODE PEAK RATE OF FALL Irr, REVERSE RECOVERY CURRENT 2µC 400A/µs 40A 0A 300A/µs IF=12A d i F / d t, DIODE CURRENT SLOPE Figure 22. Typical reverse recovery charge as a function of diode current slope (VR = 800V, Tj = 150°C, dynamic test circuit in Fig.E ) 50A 20A 3µC 0µC 300A/µs 900A/µs IF=25A 500A/µs 700A/µs 900A/µs diF/dt, DIODE CURRENT SLOPE Figure 24. Typical diode peak rate of fall of reverse recovery current as a function of diode current slope (VR = 800V, Tj = 150°C, dynamic test circuit in Fig.E ) 9 Rev. 2_1 Apr 06 SKW25N120 80A 3.0V IF=50A 2.5V TJ=150°C VF, FORWARD VOLTAGE IF, FORWARD CURRENT 60A 40A TJ=25°C 20A IF=25A 2.0V 1.5V IF=12A 1.0V 0.5V 0A 0V 1V 2V 3V 0.0V 0°C 4V 40°C 80°C 120°C Tj, JUNCTION TEMPERATURE Figure 26. Typical diode forward voltage as a function of junction temperature 0 10 K/W D=0.5 0.2 0.1 R,(K/W) 0.05339 0.40771 0.22473 0.46420 0. 02 -1 10 K/W 0.05 R1 0. 01 ZthJCD, TRANSIENT THERMAL IMPEDANCE VF, FORWARD VOLTAGE Figure 25. Typical diode forward current as a function of forward voltage single pulse 100µs R2 C 1 = τ 1 / R 1 C 2 = τ 2 /R 2 -2 10 K/W 10µs τ, (s) 0.30438 0.09698 0.00521 0.00042 1ms 10ms 100ms 1s tp, PULSE WIDTH Figure 27. Diode transient thermal impedance as a function of pulse width (D = tp / T) Power Semiconductors 10 Rev. 2_1 Apr 06 SKW25N120 PG-TO247-3-21 Power Semiconductors 11 Rev. 2_1 Apr 06 SKW25N120 i,v tr r =tS +tF diF /dt Qr r =QS +QF IF tS QS Ir r m tr r tF QF 10% Ir r m dir r /dt 90% Ir r m t VR Figure C. Definition of diodes switching characteristics τ1 τ2 r1 r2 τn rn Tj (t) p(t) r1 r2 rn Figure A. Definition of switching times TC Figure D. Thermal equivalent circuit Figure B. Definition of switching losses Power Semiconductors Figure E. Dynamic test circuit Leakage inductance Lσ =180nH, and stray capacity Cσ =40pF. 12 Rev. 2_1 Apr 06 SKW25N120 Edition 2006-01 Published by Infineon Technologies AG 81726 München, Germany © Infineon Technologies AG 5/10/06. All Rights Reserved. Attention please! The information given in this data sheet shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Power Semiconductors 13 Rev. 2_1 Apr 06