IGP03N120H2

IGP03N120H2
IGW03N120H2
HighSpeed 2-Technology
C
•
•
•
•
•
Designed for:
- SMPS
- Lamp Ballast
- ZVS-Converter
- optimised for soft-switching / resonant topologies
G
2nd generation HighSpeed-Technology
for 1200V applications offers:
- loss reduction in resonant circuits
- temperature stable behavior
- parallel switching capability
- tight parameter distribution
- Eoff optimized for IC =3A
E
PG-TO-247-3
PG-TO220-3-1
Qualified according to JEDEC2 for target applications
Pb-free lead plating; RoHS compliant
Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/
Type
VCE
IC
Eoff
Tj
Marking
Package
IGW03N120H2
1200V
3A
0.15mJ
150°C
G03H1202
PG-TO-247-3
IGP03N120H2
1200V
3A
0.15mJ
150°C
G03H1202
PG-TO-220-3-1
Maximum Ratings
Parameter
Symbol
Value
Unit
Collector-emitter voltage
VCE
1200
V
Triangular collector current
IC
A
9.6
3.9
TC = 25°C, f = 140kHz
TC = 100°C, f = 140kHz
Pulsed collector current, tp limited by Tjmax
ICpuls
9.9
Turn off safe operating area
-
9.9
Gate-emitter voltage
VGE
±20
V
Power dissipation
Ptot
62.5
W
-40...+150
°C
VCE ≤ 1200V, Tj ≤ 150°C
TC = 25°C
Operating junction and storage temperature
Tj , Tstg
Soldering temperature, 1.6mm (0.063 in.) from case for 10s
-
2
260
J-STD-020 and JESD-022
Power Semiconductors
1
Rev. 2.6 Febr. 08
IGP03N120H2
IGW03N120H2
Thermal Resistance
Parameter
Symbol
Conditions
Max. Value
Unit
2.0
K/W
Characteristic
IGBT thermal resistance,
RthJC
junction – case
Thermal resistance,
RthJA
junction – ambient
PG- TO- 220- 3-1
62
PG-TO-247-3
40
Electrical Characteristic, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Value
min.
Typ.
max.
1200
-
-
T j = 25°C
-
2.2
2.8
T j = 150 °C
-
2.5
-
V G E = 10 V, I C = 3 A ,
T j = 25°C
-
2.4
-
2.1
3
3.9
Unit
Static Characteristic
Collector-emitter breakdown voltage
V ( B R ) C E S V G E = 0 V , I C =300 μA
Collector-emitter saturation voltage
VCE(sat)
V
V G E = 15 V, I C = 3 A
Gate-emitter threshold voltage
VGE(th)
I C = 9 0 μA,V C E = V G E
Zero gate voltage collector current
ICES
V C E = 12 00 V, V G E = 0 V
μA
T j = 25°C
-
-
20
T j = 150 °C
-
-
80
Gate-emitter leakage current
IGES
V C E = 0 V ,V G E =20V
-
-
100
nA
Transconductance
gfs
V C E =20V, I C = 3 A
-
2
-
S
Input capacitance
Ciss
V C E =25V,
-
205
-
pF
Output capacitance
Coss
VGE=0V,
-
24
-
Reverse transfer capacitance
Crss
f=1MHz
-
7
-
Gate charge
QGate
V C C = 96 0 V, I C = 3 A
-
22
-
nC
PG- TO- 220- 3-1
-
7
-
nH
PG-TO-247-3
-
13
-
Dynamic Characteristic
V G E =15V
Internal emitter inductance
measured 5mm (0.197 in.) from case
Power Semiconductors
LE
2
Rev. 2.6 Febr. 08
IGP03N120H2
IGW03N120H2
Switching Characteristic, Inductive Load, at Tj=25 °C
Parameter
Symbol
Conditions
Value
min.
typ.
max.
-
9.2
-
-
5.2
-
-
281
-
-
29
-
-
0.14
-
-
0.15
-
-
0.29
-
Unit
IGBT Characteristic
Turn-on delay time
td(on)
Rise time
tr
Turn-off delay time
td(off)
Fall time
tf
Turn-on energy
Eon
Turn-off energy
Eoff
Total switching energy
Ets
T j = 25°C ,
V C C = 80 0 V, I C = 3 A ,
V G E =15V/0V,
R G = 8 2Ω ,
L σ 2 ) =1 80nH,
C σ 2 ) =40pF
Energy losses include
“tail” and diode 3)
reverse recovery.
ns
mJ
Switching Characteristic, Inductive Load, at Tj=150 °C
Parameter
Symbol
Conditions
Value
min.
typ.
max.
-
9.4
-
-
6.7
-
-
340
-
-
63
-
-
0.22
-
-
0.26
-
-
0.48
-
Unit
IGBT Characteristic
Turn-on delay time
td(on)
Rise time
tr
Turn-off delay time
td(off)
Fall time
tf
Turn-on energy
Eon
Turn-off energy
Eoff
Total switching energy
Ets
T j = 150 °C
V C C = 80 0 V,
IC=3A,
V G E =15V/0V,
R G = 8 2Ω ,
L σ 2 ) =1 80nH,
C σ 2 ) =40pF
Energy losses include
“tail” and diode 3)
reverse recovery.
ns
mJ
Switching Energy ZVT, Inductive Load
Parameter
Symbol
Conditions
Value
min.
typ.
max.
Unit
IGBT Characteristic
Turn-off energy
Eoff
mJ
V C C = 80 0 V,
IC=3A,
V G E =15V/0V,
R G = 8 2Ω ,
C r 2 ) = 4n F
2)
3)
T j = 25°C
-
0.05
-
T j = 150 °C
-
0.09
-
Leakage inductance Lσ and stray capacity Cσ due to dynamic test circuit in figure E
Commutation diode from device IKP03N120H2
Power Semiconductors
3
Rev. 2.6 Febr. 08
IGP03N120H2
IGW03N120H2
Ic
12A
t p =1 μs
10A
5 μs
IC, COLLECTOR CURRENT
IC, COLLECTOR CURRENT
10A
8A
TC=80°C
6A
TC=110°C
4A
2A
0A
10Hz
Ic
100Hz
10 μs
1A
50 μs
100 μs
0,1A
500 μs
DC
1kHz
10kHz
,01A
100kHz
1V
10V
100V
1000V
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 2. Safe operating area
(D = 0, TC = 25°C, Tj ≤ 150°C)
f, SWITCHING FREQUENCY
Figure 1. Collector current as a function of
switching frequency
(Tj ≤ 150°C, D = 0.5, VCE = 800V,
VGE = +15V/0V, RG = 82Ω)
12A
60W
10A
IC, COLLECTOR CURRENT
Ptot,
POWER DISSIPATION
50W
40W
30W
20W
10W
0W
25°C
50°C
75°C
100°C
6A
4A
2A
0A
25°C
125°C
TC, CASE TEMPERATURE
Figure 3. Power dissipation as a function
of case temperature
(Tj ≤ 150°C)
Power Semiconductors
8A
50°C
75°C
100°C
125°C
150°C
TC, CASE TEMPERATURE
Figure 4. Collector current as a function of
case temperature
(VGE ≤ 15V, Tj ≤ 150°C)
4
Rev. 2.6 Febr. 08
IGP03N120H2
IGW03N120H2
10A
10A
9A
8A
IC, COLLECTOR CURRENT
IC, COLLECTOR CURRENT
8A
VGE=15V
6A
12V
10V
8V
6V
4A
2A
7A
6A
5A
VGE=15V
12V
10V
8V
6V
4A
3A
2A
1A
0A
0V
1V
2V
3V
4V
0A
0V
5V
12A
IC, COLLECTOR CURRENT
10A
8A
6A
Tj=+150°C
Tj=+25°C
4A
2A
0A
3V
5V
7V
9V
VGE, GATE-EMITTER VOLTAGE
Figure 7. Typical transfer characteristics
(VCE = 20V)
Power Semiconductors
2V
3V
4V
5V
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 6. Typical output characteristics
(Tj = 150°C)
VCE(sat), COLLECTOR-EMITTER SATURATION VOLTAGE
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 5. Typical output characteristics
(Tj = 25°C)
1V
3V
IC=6A
IC=3A
2V
IC=1.5A
1V
0V
-50°C
0°C
50°C
100°C
150°C
Tj, JUNCTION TEMPERATURE
Figure 8. Typical collector-emitter
saturation voltage as a function of junction
temperature
(VGE = 15V)
5
Rev. 2.6 Febr. 08
IGP03N120H2
IGW03N120H2
1000ns
1000ns
td(off)
100ns
t, SWITCHING TIMES
t, SWITCHING TIMES
td(off)
tf
td(on)
10ns
100ns
tf
td(on)
10ns
tr
tr
1ns
0A
2A
1ns
4A
IC, COLLECTOR CURRENT
Figure 9. Typical switching times as a
function of collector current
(inductive load, Tj = 150°C,
VCE = 800V, VGE = +15V/0V, RG = 82Ω,
dynamic test circuit in Fig.E)
100ns
tf
td(on)
tr
50°C
75°C
100°C
125°C
150°C
VGE(th), GATE-EMITTER THRESHOLD VOLTAGE
t, SWITCHING TIMES
100Ω
150Ω
5V
td(off)
1ns
25°C
50Ω
RG, GATE RESISTOR
Figure 10. Typical switching times as a
function of gate resistor
(inductive load, Tj = 150°C,
VCE = 800V, VGE = +15V/0V, IC = 3A,
dynamic test circuit in Fig.E)
1000ns
10ns
0Ω
Tj, JUNCTION TEMPERATURE
Figure 11. Typical switching times as a
function of junction temperature
(inductive load, VCE = 800V,
VGE = +15V/0V, IC = 3A, RG = 82Ω,
dynamic test circuit in Fig.E)
Power Semiconductors
4V
max.
3V
typ.
2V
min.
1V
0V
-50°C
0°C
50°C
100°C
150°C
Tj, JUNCTION TEMPERATURE
Figure 12. Gate-emitter threshold voltage
as a function of junction temperature
(IC = 0.09mA)
6
Rev. 2.6 Febr. 08
IGP03N120H2
IGW03N120H2
1.0mJ
1
1
Ets
0.7mJ
1
E, SWITCHING ENERGY LOSSES
E, SWITCHING ENERGY LOSSES
) Eon and Ets include losses
due to diode recovery.
Eoff
0.5mJ
1
Eon
0A
2A
0.4mJ
0.3mJ
0.5mJ
1
E, SWITCHING ENERGY LOSSES
) Eon and Ets include losses
due to diode recovery.
Ets
1
0.4mJ
0.3mJ
Eoff
1
Eon
0.2mJ
0.1mJ
25°C
80°C
125°C
150°C
1
Eon
50Ω
100Ω
150Ω
200Ω
250Ω
IC=3A, TJ=150°C
0.16mJ
0.12mJ
IC=3A, TJ=25°C
0.08mJ
IC=1A, TJ=150°C
0.04mJ
IC=1A, TJ=25°C
0.00mJ
0V/us
1000V/us
2000V/us
3000V/us
dv/dt, VOLTAGE SLOPE
Tj, JUNCTION TEMPERATURE
Figure 15. Typical switching energy losses
as a function of junction temperature
(inductive load, VCE = 800V,
VGE = +15V/0V, IC = 3A, RG = 82Ω,
dynamic test circuit in Fig.E )
Power Semiconductors
Eoff
RG, GATE RESISTOR
Figure 14. Typical switching energy losses
as a function of gate resistor
(inductive load, Tj = 150°C,
VCE = 800V, VGE = +15V/0V, IC = 3A,
dynamic test circuit in Fig.E )
Eoff, TURN OFF SWITCHING ENERGY LOSS
IC, COLLECTOR CURRENT
Figure 13. Typical switching energy losses
as a function of collector current
(inductive load, Tj = 150°C,
VCE = 800V, VGE = +15V/0V, RG = 82Ω,
dynamic test circuit in Fig.E )
1
0.5mJ
0Ω
4A
Ets
0.6mJ
0.2mJ
0.0mJ
) Eon and Ets include losses
due to diode recovery.
Figure 16. Typical turn off switching energy
loss for soft switching
(dynamic test circuit in Fig. E)
7
Rev. 2.6 Febr. 08
IGP03N120H2
IGW03N120H2
D=0.5
0
10 K/W
VGE, GATE-EMITTER VOLTAGE
ZthJC, TRANSIENT THERMAL RESISTANCE
20V
0.2
0.1
0.05
-1
10 K/W
R,(K/W)
1.082517
0.328671
0.588811
0.02
0.01
τ, (s)
0.000795
0.000179
0.004631
R1
R2
-2
10 K/W
single pulse
1µs
10µs
C 1 = τ 1 /R 1 C 2 = τ 2 /R 2
100µs
1ms
10ms
15V
UCE=240V
10V
UCE=960V
5V
0V
0nC
100ms
QGE, GATE CHARGE
Figure 16. IGBT transient thermal resistance
(D = tp / T)
10nC
20nC
30nC
QGE, GATE CHARGE
Figure 17. Typical gate charge
(IC = 3A)
1000V
1nF
100pF
Coss
10pF
Crss
800V
2A
600V
400V
1A
200V
0A
0V
0V
10V
20V
0.0
30V
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 18. Typical capacitance as a
function of collector-emitter voltage
(VGE = 0V, f = 1MHz)
Power Semiconductors
ICE COLLECTOR CURRENT
C, CAPACITANCE
Ciss
VCE, COLLECTOR-EMITTER VOLTAGE
3A
0.2
0.4
0.6
0.8
1.0
1.2
tp, PULSE WIDTH
Figure 20. Typical turn off behavior, hard
switching
(VGE=15/0V, RG=82Ω, Tj = 150°C,
Dynamic test circuit in Figure E)
8
Rev. 2.6 Febr. 08
IGP03N120H2
IGW03N120H2
VGE, GATE-EMITTER VOLTAGE
2A
600V
400V
1A
200V
0A
ICE COLLECTOR CURRENT
3A
800V
0V
0.0
0.4
0.8
1.2
1.6
2.0
2.4
2.8
tp, PULSE WIDTH
Figure 21. Typical turn off behavior, soft
switching
(VGE=15/0V, RG=82Ω, Tj = 150°C,
Dynamic test circuit in Figure E)
Power Semiconductors
9
Rev. 2.6 Febr. 08
IGP03N120H2
IGW03N120H2
PG-TO247-3
Power Semiconductors
10
Rev. 2.6 Febr. 08
IGP03N120H2
IGW03N120H2
PG-TO220-3-1
Power Semiconductors
11
Rev. 2.6 Febr. 08
IGP03N120H2
IGW03N120H2
i,v
tr r =tS +tF
diF /dt
Qr r =QS +QF
tr r
IF
tS
QS
Ir r m
tF
QF
10% Ir r m
dir r /dt
90% Ir r m
t
VR
Figure C. Definition of diodes
switching characteristics
τ1
τ2
r1
τn
r2
rn
Tj (t)
p(t)
r2
r1
rn
Figure A. Definition of switching times
TC
Figure D. Thermal equivalent
circuit
½ Lσ
öö
DUT
(Diode)
L
Cσ
Cr
VDC
RG
DUT
(IGBT)
½ Lσ
Figure E. Dynamic test circuit
Leakage inductance Lσ = 180nH,
Stray capacitor Cσ = 40pF,
Relief capacitor Cr = 4nF (only for
ZVT switching)
Figure B. Definition of switching losses
Power Semiconductors
12
Rev. 2.6 Febr. 08
IGP03N120H2
IGW03N120H2
Edition 2006-01
Published by
Infineon Technologies AG
81726 München, Germany
© Infineon Technologies AG 2/18/08.
All Rights Reserved.
Attention please!
The information given in this data sheet shall in no event be regarded as a guarantee of conditions or
characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical
values stated herein and/or any information regarding the application of the device, Infineon Technologies
hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of
non-infringement of intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices please contact your nearest
Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements components may contain dangerous substances. For information on the types
in question please contact your nearest Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or systems with the express
written approval of Infineon Technologies, if a failure of such components can reasonably be expected to
cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or
system. Life support devices or systems are intended to be implanted in the human body, or to support
and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health
of the user or other persons may be endangered.
Power Semiconductors
13
Rev. 2.6 Febr. 08