IGP10N60T Data Sheet (439 KB, EN)

TRENCHSTOP™ Series
IGP10N60T
q
Low Loss IGBT : IGBT in TRENCHSTOP™ and Fieldstop technology
Features:

Very low VCE(sat) 1.5V (typ.)

Maximum Junction Temperature 175°C

Short circuit withstand time 5s

Designed for :
- Variable Speed Drive for washing machines and air conditioners
- induction cooking
- Uninterrupted Power Supply

TRENCHSTOP™ and Fieldstop technology for 600V applications offers :
- very tight parameter distribution
- high ruggedness, temperature stable behaviour

NPT technology offers easy parallel switching capability due to
positive temperature coefficient in VCE(sat)

Low EMI

Low Gate Charge

Qualified according to JEDEC1 for target applications

Pb-free lead plating; RoHS compliant

Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/
Type
IGP10N60T
VCE
IC
VCE(sat),Tj=25°C
Tj,max
Marking Code
600V
10A
1.5V
175C
G10T60
C
G
E
PG-TO-220-3
Package
PG-TO-220-3
Maximum Ratings
Parameter
Symbol
Value
Collector-emitter voltage, Tj ≥ 25C
VCE
600
IC
24
Unit
V
DC collector current, limited by Tjmax
TC = 25C
18
TC = 100C
Pulsed collector current, tp limited by Tjmax
ICpul s
30
Turn off safe operating area, VCE = 600V, Tj = 175C, tp = 1µs
-
30
Gate-emitter voltage
VGE
20
tSC
5
Power dissipation TC = 25C
Ptot
110
Operating junction temperature
Tj
-40...+175
Storage temperature
Tstg
-55...+150
Short circuit withstand time
2)
VGE = 15V, VCC  400V, Tj  150C
Soldering temperature, 1.6mm (0.063 in.) from case for 10s
1
2)
A
V
s
W
C
260
J-STD-020 and JESD-022
Allowed number of short circuits: <1000; time between short circuits: >1s.
IFAG IPC TD VLS
1
Rev. 2.5 30.04.2015
TRENCHSTOP™ Series
IGP10N60T
q
Thermal Resistance
Parameter
Symbol
Conditions
Max. Value
Unit
RthJC
1.35
K/W
RthJA
62
Characteristic
IGBT thermal resistance,
junction – case
Thermal resistance,
junction – ambient
Electrical Characteristic, at Tj = 25 C, unless otherwise specified
Parameter
Symbol
Conditions
Value
min.
typ.
max.
600
-
-
T j =2 5 C
-
1.5
2.05
T j =1 7 5 C
-
1.8
-
4.1
4.6
5.7
Unit
Static Characteristic
Collector-emitter breakdown voltage
V ( B R ) C E S V G E = 0V , I C = 0 .2m A
Collector-emitter saturation voltage
VCE(sat)
V
V G E = 15 V , I C = 10 A
Gate-emitter threshold voltage
VGE(th)
I C = 0. 3m A, V C E = V G E
Zero gate voltage collector current
ICES
V C E = 60 0 V ,
V G E = 0V
µA
T j =2 5 C
-
-
40
T j =1 7 5 C
-
-
1000
Gate-emitter leakage current
IGES
V C E = 0V , V G E =2 0 V
-
-
100
nA
Transconductance
gfs
V C E = 20 V , I C = 10 A
-
6
-
S
Integrated gate resistor
RGint
Ω
none
Dynamic Characteristic
Input capacitance
Ciss
V C E = 25 V ,
-
551
-
Output capacitance
Coss
V G E = 0V ,
-
40
-
Reverse transfer capacitance
Crss
f= 1 MH z
-
17
-
Gate charge
QGate
V C C = 48 0 V, I C =1 0 A
-
62
-
nC
pF
V G E = 15 V
Internal emitter inductance
LE
T O - 22 0- 3- 1
-
7
-
nH
IC(SC)
V G E = 15 V ,t S C  5 s
V C C = 4 0 0 V,
T j = 25  C
-
100
-
A
measured 5mm (0.197 in.) from case
Short circuit collector current
1)
1)
Allowed number of short circuits: <1000; time between short circuits: >1s.
IFAG IPC TD VLS
2
Rev. 2.5 30.04.2015
TRENCHSTOP™ Series
IGP10N60T
q
Switching Characteristic , Inductive Load, at Tj=25 C
3)
Parameter
Symbol
Conditions
Value
min.
typ.
max.
-
12
-
-
8
-
-
215
-
-
38
-
-
0.16
-
-
0.27
-
-
0.43
-
Unit
IGBT Characteristic
Turn-on delay time
td(on)
Rise time
tr
Turn-off delay time
td(off)
Fall time
tf
Turn-on energy
Eon
Turn-off energy
Eoff
Total switching energy
Ets
T j=25 C,
VCC=400V,IC=10A,
VGE=0/15V,rG=23,
L =60nH, C=40pF
L , C f rom Fig. E
Energy losses include
“tail” and diode reverse
recovery.
Diode from IKP10N60T
ns
mJ
Switching Characteristic , Inductive Load, at Tj=175 C
3)
Parameter
Symbol
Conditions
Value
min.
typ.
max.
-
10
-
-
11
-
-
233
-
-
63
-
-
0.26
-
-
0.35
-
-
0.61
-
Unit
IGBT Characteristic
Turn-on delay time
td(on)
Rise time
tr
Turn-off delay time
td(off)
Fall time
tf
Turn-on energy
Eon
Turn-off energy
Eoff
Total switching energy
Ets
IFAG IPC TD VLS
T j=175 C,
VCC=400V,IC=10A,
VGE=0/15V,rG=23,
L =60nH, C=40pF
L , C f rom Fig. E
Energy losses include
“tail” and diode reverse
recovery.
Diode from IKP10N60T
3
ns
mJ
Rev. 2.5 30.04.2015
TRENCHSTOP™ Series
IGP10N60T
q
t p =1µs
T C =80°C
20A
15A
T C =110°C
10A
Ic
5A
0A
10Hz
5µs
10A
25A
IC, COLLECTOR CURRENT
IC, COLLECTOR CURRENT
30A
20µs
100µs
1A
500µs
10ms
Ic
DC
100Hz
1kHz
10kHz
0,1A
1V
100kHz
f, SWITCHING FREQUENCY
10V
100V
1000V
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 1. Collector current as a function of
switching frequency
(Tj  175C, D = 0.5, VCE = 400V,
VGE = 0/15V, rG = 23)
Figure 2. Safe operating area
(D = 0, TC = 25C, Tj 175C;
VGE=0/15V)
120W
20A
IC, COLLECTOR CURRENT
Ptot, POWER DISSIPATION
100W
80W
60W
40W
15A
10A
5A
20W
0W
25°C
0A
50°C
75°C
100°C 125°C 150°C
25°C
TC, CASE TEMPERATURE
Figure 3. Power dissipation as a function
of case temperature
(Tj  175C)
IFAG IPC TD VLS
50°C
75°C
100°C
125°C
150°C
TC, CASE TEMPERATURE
Figure 4. Collector current as a function of
case temperature
(VGE  15V, Tj  175C)
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Rev. 2.5 30.04.2015
TRENCHSTOP™ Series
30A
30A
25A
V G E =20V
IC, COLLECTOR CURRENT
IC, COLLECTOR CURRENT
25A
IGP10N60T
q
15V
20A
12V
10V
15A
8V
6V
10A
5A
V G E =20V
15V
20A
12V
10V
15A
8V
6V
10A
5A
0A
0A
0V
1V
2V
3V
4V
0V
VCE, COLLECTOR-EMITTER VOLTAGE
VCE(sat), COLLECTOR-EMITT SATURATION VOLTAGE
IC, COLLECTOR CURRENT
20A
15A
10A
T J =175°C
25°C
0A
2V
4V
6V
8V
10V
VGE, GATE-EMITTER VOLTAGE
Figure 7. Typical transfer characteristic
(VCE=20V)
IFAG IPC TD VLS
3V
4V
5V
Figure 6. Typical output characteristic
(Tj = 175°C)
25A
0V
2V
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 5. Typical output characteristic
(Tj = 25°C)
5A
1V
3,0V
IC =20A
2,5V
IC =10A
2,0V
1,5V
I C =5A
1,0V
0,5V
0,0V
-50°C
0°C
50°C
100°C
150°C
TJ, JUNCTION TEMPERATURE
Figure 8. Typical collector-emitter
saturation voltage as a function
of junction temperature
(VGE = 15V)
5
Rev. 2.5 30.04.2015
TRENCHSTOP™ Series
IGP10N60T
q
t d(off)
t d(off)
100ns
t, SWITCHING TIMES
t, SWITCHING TIMES
100ns
tf
t d(on)
10ns
tf
t d(on)
10ns
tr
tr
1ns
1ns
0A
5A
10A
15A

20A
IC, COLLECTOR CURRENT




RG, GATE RESISTOR
Figure 9. Typical switching times as a
function of collector current
(inductive load, TJ=175°C,
VCE = 400V, VGE = 0/15V, rG = 23Ω,
Dynamic test circuit in Figure E)
Figure 10. Typical switching times as a
function of gate resistor
(inductive load, TJ = 175°C,
VCE= 400V, VGE = 0/15V, IC = 10A,
Dynamic test circuit in Figure E)
7V
t, SWITCHING TIMES
100ns
tf
t d(on)
10ns
tr
1ns
25°C
50°C
75°C
6V
4V
m ax.
typ.
5V
m in.
3V
2V
1V
0V
-50°C
100°C 125°C 150°C
TJ, JUNCTION TEMPERATURE
Figure 11. Typical switching times as a
function of junction temperature
(inductive load, VCE = 400V,
VGE = 0/15V, IC = 10A, rG=23Ω,
Dynamic test circuit in Figure E)
IFAG IPC TD VLS
VGE(th), GATE-EMITT TRSHOLD VOLTAGE
t d(off)
0°C
50°C
100°C
150°C
TJ, JUNCTION TEMPERATURE
Figure 12. Gate-emitter threshold voltage as
a function of junction
temperature
(IC = 0.3mA)
6
Rev. 2.5 30.04.2015
IGP10N60T
q
TRENCHSTOP™ Series
*) E on and E ts include losses
*) E on and E ts include losses
0,8m J
E off
0,6m J
0,4m J
E on *
0,2m J
0,0m J
0A
5A
10A
15A
0,8 m J
0,6 m J
E off
0,4 m J
E on *
0,2 m J
0,0 m J


IC, COLLECTOR CURRENT



RG, GATE RESISTOR
Figure 13. Typical switching energy losses
as a function of collector current
(inductive load, TJ = 175°C,
VCE = 400V, VGE = 0/15V, rG = 23Ω,
Dynamic test circuit in Figure E)
Figure 14. Typical switching energy losses
as a function of gate resistor
(inductive load, TJ = 175°C,
VCE = 400V, VGE = 0/15V, IC = 10A,
Dynamic test circuit in Figure E)
*) E on and E ts include losses
*) E on and E ts include losses
due to diode recovery
due to diode recovery
0,6m J
E ts *
due to diode recovery
E, SWITCHING ENERGY LOSSES
E, SWITCHING ENERGY LOSSES
E ts *
due to diode recovery
1,0m J
0,5m J
E, SWITCHING ENERGY LOSSES
E, SWITCHING ENERGY LOSSES
0,8m J
E ts *
0,4m J
0,3m J E off
0,2m J
0,1m J
E on *
0,6m J
E ts *
0,4m J
E off
0,2m J
E on *
0,0m J
300V
0,0m J
50°C
100°C
TJ, JUNCTION TEMPERATURE
Figure 15. Typical switching energy losses
as a function of junction
temperature
(inductive load, VCE = 400V,
VGE = 0/15V, IC = 10A, rG = 23Ω,
Dynamic test circuit in Figure E)
IFAG IPC TD VLS
350V
400V
450V
500V
550V
150°C
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 16. Typical switching energy losses
as a function of collector emitter
voltage
(inductive load, TJ = 175°C,
VGE = 0/15V, IC = 10A, rG = 23Ω,
Dynamic test circuit in Figure E)
7
Rev. 2.5 30.04.2015
TRENCHSTOP™ Series
IGP10N60T
q
1nF
15V
c, CAPACITANCE
VGE, GATE-EMITTER VOLTAGE
C iss
120V
480V
10V
100pF
C oss
5V
C rss
0V
0nC
20nC
40nC
60nC
10pF
QGE, GATE CHARGE
0V
10V
20V
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 17. Typical gate charge
(IC=10 A)
Figure 18. Typical capacitance as a function
of collector-emitter voltage
(VGE=0V, f = 1 MHz)
150A
tSC, SHORT CIRCUIT WITHSTAND TIME
IC(sc), short circuit COLLECTOR CURRENT
12µs
125A
100A
75A
50A
25A
0A
12V
14V
16V
8µs
6µs
4µs
2µs
0µs
10V
18V
VGE, GATE-EMITTETR VOLTAGE
Figure 19. Typical short circuit collector
current as a function of gateemitter voltage
(VCE  400V, Tj  150C)
IFAG IPC TD VLS
10µs
11V
12V
13V
14V
VGE, GATE-EMITETR VOLTAGE
Figure 20. Short circuit withstand time as a
function of gate-emitter voltage
(VCE=400V, start at TJ=25°C,
TJmax<150°C)
8
Rev. 2.5 30.04.2015
TRENCHSTOP™ Series
IGP10N60T
q
0
ZthJC, TRANSIENT THERMAL IMPEDANCE
10 K/W
D=0.5
0.1
-1
10 K/W
, (s)
6.53*10-2
8.33*10-3
7.37*10-4
7.63*10-5
R,(K/W)
0.2911
0.4092
0.5008
0.1529
0.2
R1
0.05
0.02
0.01
R2
C 1 =  1 /R 1
C 2 =  2 /R 2
single pulse
-2
10 K/W
10µs
100µs
1ms
10ms
100ms
tP, PULSE WIDTH
Figure 21. IGBT transient thermal
impedance
(D = tp / T)
IFAG IPC TD VLS
9
Rev. 2.5 30.04.2015
TRENCHSTOP™ Series
IGP10N60T
q
PG-TO220-3
IFAG IPC TD VLS
10
Rev. 2.5 30.04.2015
TRENCHSTOP™ Series
IGP10N60T
q
i,v
tr r =tS +tF
diF /dt
Qr r =QS +QF
tr r
IF
tS
QS
Ir r m
tF
QF
10% Ir r m
dir r /dt
90% Ir r m
t
VR
Figure C. Definition of diodes
switching characteristics
1
2
r1
n
r2
rn
Tj (t)
p(t)
r1
r2
rn
Figure A. Definition of switching times
TC
Figure D. Thermal equivalent
circuit
Figure B. Definition of switching losses
IFAG IPC TD VLS
11
Rev. 2.5 30.04.2015
TRENCHSTOP™ Series
IGP10N60T
q
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2015 Infineon Technologies AG
All Rights Reserved.
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to assume that the health of the user or other persons may be endangered.
IFAG IPC TD VLS
12
Rev. 2.5 30.04.2015