IGB30N60T Data Sheet (669 KB, EN)

TRENCHSTOP™ Series
IGB30N60T
q
Low Loss IGBT : IGBT in TRENCHSTOP™ and Fieldstop technology
Features:

Very low VCE(sat) 1.5V (typ.)

Maximum Junction Temperature 175°C

Short circuit withstand time 5s

Designed for frequency inverters for washing machines, fans, pumps and vacuum
cleaners

TRENCHSTOP™ technology for 600V applications offers :
- very tight parameter distribution
- high ruggedness, temperature stable behavior
- very high switching speed

Positive temperature coefficient in VCE(sat)

Low EMI

Pb-free lead plating; RoHS compliant

Qualified according to JEDEC1 for target applications

Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/
Type
IGB30N60T
C
G
E
PG-TO263-3
VCE
IC
VCE(sat),Tj=25°C
Tj,max
Marking Code
Package
600V
30A
1.5V
175C
G30T60
PG-TO263-3
Maximum Ratings
Parameter
Symbol
Value
Collector-emitter voltage, Tj ≥ 25C
VCE
600
IC
45
Unit
V
DC collector current, limited by Tjmax
TC = 25C, value limited by bondwire
39
TC = 100C
A
Pulsed collector current, tp limited by Tjmax
ICpul s
90
Turn off safe operating area, VCE = 600V, Tj = 175C, tp = 1µs
-
90
Gate-emitter voltage
VGE
20
V
tSC
5
s
Power dissipation TC = 25C
Ptot
187
W
Operating junction temperature
Tj
-40...+175
Storage temperature
Tstg
-55...+150
Soldering temperature (reflow soldering, MSL1)
-
Short circuit withstand time
2)
VGE = 15V, VCC  400V, Tj  150C
1
2)
C
260
J-STD-020 and JESD-022
Allowed number of short circuits: <1000; time between short circuits: >1s.
IFAG IPC TD VLS
1
Rev. 2.5 19.05.2015
TRENCHSTOP™ Series
IGB30N60T
q
Thermal Resistance
Parameter
Symbol
Conditions
Max. Value
Unit
0.80
K/W
Characteristic
RthJC
IGBT thermal resistance,
junction – case
RthJA
Thermal resistance,
6 cm² Cu
40
junction – ambient
Electrical Characteristic, at Tj = 25 C, unless otherwise specified
Parameter
Symbol
Conditions
Value
min.
typ.
max.
600
-
-
T j =2 5 C
-
1.5
2.05
T j =1 7 5 C
-
1.9
-
4.1
4.9
5.7
Unit
Static Characteristic
Collector-emitter breakdown voltage
V ( B R ) C E S V G E = 0V , I C = 0 .2m A
Collector-emitter saturation voltage
VCE(sat)
V
V G E = 15 V , I C = 30 A
Gate-emitter threshold voltage
VGE(th)
I C = 0. 43m A ,
VCE=VGE
Zero gate voltage collector current
ICES
V C E = 60 0 V ,
V G E = 0V
µA
T j =2 5 C
-
-
40
T j =1 7 5 C
-
-
2000
Gate-emitter leakage current
IGES
V C E = 0V , V G E =2 0 V
-
-
100
nA
Transconductance
gfs
V C E = 20 V , I C = 30 A
-
16.7
-
S
Integrated gate resistor
RGint
Ω
-
Dynamic Characteristic
Input capacitance
Ciss
V C E = 25 V ,
-
1630
-
Output capacitance
Coss
V G E = 0V ,
-
108
-
Reverse transfer capacitance
Crss
f= 1 MH z
-
50
-
Gate charge
QGate
V C C = 48 0 V, I C =3 0 A
-
167
-
nC
-
7
-
nH
-
275
-
A
pF
V G E = 15 V
LE
Internal emitter inductance
measured 5mm (0.197 in.) from case
Short circuit collector current
1)
1)
IC(SC)
V G E = 15 V ,t S C  5 s
V C C = 4 0 0 V,
T j = 15 0 C
Allowed number of short circuits: <1000; time between short circuits: >1s.
IFAG IPC TD VLS
2
Rev. 2.5 19.05.2015
TRENCHSTOP™ Series
IGB30N60T
q
Switching Characteristic, Inductive Load, at Tj=25 C
Parameter
Symbol
Conditions
Value
min.
Typ.
max.
-
23
-
-
21
-
-
254
-
-
46
-
-
0.69
-
-
0.77
-
-
1.46
-
Unit
IGBT Characteristic
Turn-on delay time
td(on)
Rise time
tr
Turn-off delay time
td(off)
Fall time
tf
Turn-on energy
Eon
Turn-off energy
Eoff
Total switching energy
Ets
T j=25 C,
VCC=400V,IC=30A,
VGE=0/15V,
rG=10.6,
L =136nH,C =39pF
L , C f rom Fig. E
Energy losses include
“tail” and diode reverse
recovery.
ns
mJ
Switching Characteristic, Inductive Load, at Tj=175 C
Parameter
Symbol
Conditions
Value
min.
Typ.
max.
-
24
-
-
26
-
-
292
-
-
90
-
-
1.0
-
-
1.1
-
-
2.1
-
Unit
IGBT Characteristic
Turn-on delay time
td(on)
Rise time
tr
Turn-off delay time
td(off)
Fall time
tf
Turn-on energy
Eon
Turn-off energy
Eoff
Total switching energy
Ets
IFAG IPC TD VLS
T j=175 C,
VCC=400V,IC=30A,
VGE=0/15V,
rG=10.6,
L =136nH,C =39pF
L , C f rom Fig. E
Energy losses include
“tail” and diode reverse
recovery.
3
ns
mJ
Rev. 2.5 19.05.2015
TRENCHSTOP™ Series
IGB30N60T
q
tp=2µs
90A
10µs
70A
60A
IC, COLLECTOR CURRENT
IC, COLLECTOR CURRENT
80A
T C =80°C
50A
T C =110°C
40A
30A
Ic
20A
1kHz
10kHz
1A
1ms
DC
0,1A
1V
100kHz
f, SWITCHING FREQUENCY
10ms
10V
100V
1000V
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 1. Collector current as a function of
switching frequency
(Tj  175C, D = 0.5, VCE = 400V,
VGE = 0/15V, rG = 10)
Figure 2. Safe operating area
(D = 0, TC = 25C, Tj 175C;
VGE=0/15V)
40A
IC, COLLECTOR CURRENT
160W
Ptot, POWER DISSIPATION
50µs
Ic
10A
0A
100Hz
10A
120W
80W
40W
30A
20A
10A
__ Icmax
--- max. current limited by bondwire
0W
25°C
50°C
75°C
0A
25°C
100°C 125°C 150°C
TC, CASE TEMPERATURE
Figure 3. Power dissipation as a function
of case temperature
(Tj  175C)
IFAG IPC TD VLS
50°C
75°C
100°C 125°C 150°C
TC, CASE TEMPERATURE
Figure 4. Collector current as a function of
case temperature
(VGE  15V, Tj  175C)
4
Rev. 2.5 19.05.2015
TRENCHSTOP™ Series
IGB30N60T
q
80A
50A
60A
V G E =20V
V G E =20V
IC, COLLECTOR CURRENT
IC, COLLECTOR CURRENT
70A
15V
50A
13V
11V
40A
9V
30A
7V
20A
40A
15V
13V
30A
11V
20A
7V
9V
10A
10A
0A
0A
0V
1V
2V
3V
0V
VCE, COLLECTOR-EMITTER VOLTAGE
VCE(sat), COLLECTOR-EMITT SATURATION VOLTAGE
IC, COLLECTOR CURRENT
40A
30A
20A
T J =175°C
10A
25°C
0A
4V
6V
8V
2.5V
IC =60A
2.0V
I C =30A
1.5V
IC =15A
1.0V
0.5V
0.0V
0°C
VGE, GATE-EMITTER VOLTAGE
Figure 7. Typical transfer characteristic
(VCE=20V)
IFAG IPC TD VLS
3V
Figure 6. Typical output characteristic
(Tj = 175°C)
50A
2V
2V
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 5. Typical output characteristic
(Tj = 25°C)
0V
1V
50°C
100°C
150°C
TJ, JUNCTION TEMPERATURE
Figure 8. Typical collector-emitter
saturation voltage as a function
of junction temperature
(VGE = 15V)
5
Rev. 2.5 19.05.2015
TRENCHSTOP™ Series
IGB30N60T
q
t d(off)
t d(off)
tf
t, SWITCHING TIMES
t, SWITCHING TIMES
100ns
t d(on)
10ns
tf
100ns
t d(on)
tr
tr
10ns
1ns
0A
10A
20A

30A
IC, COLLECTOR CURRENT



RG, GATE RESISTOR
Figure 9. Typical switching times as a
function of collector current
(inductive load, TJ=175°C,
VCE = 400V, VGE = 0/15V, rG = 10Ω,
Dynamic test circuit in Figure E)
Figure 10. Typical switching times as a
function of gate resistor
(inductive load, TJ = 175°C,
VCE= 400V, VGE = 0/15V, IC = 30A,
Dynamic test circuit in Figure E)
t, SWITCHING TIMES
t d(off)
100ns
tf
t d(on)
tr
10ns
25°C
50°C
75°C
6V
m ax.
typ.
5V
4V
m in.
3V
2V
1V
0V
-50°C
100°C 125°C 150°C
TJ, JUNCTION TEMPERATURE
Figure 11. Typical switching times as a
function of junction temperature
(inductive load, VCE = 400V,
VGE = 0/15V, IC = 30A, rG=10Ω,
Dynamic test circuit in Figure E)
IFAG IPC TD VLS
VGE(th), GATE-EMITT TRSHOLD VOLTAGE
7V
0°C
50°C
100°C
150°C
TJ, JUNCTION TEMPERATURE
Figure 12. Gate-emitter threshold voltage as
a function of junction
temperature
(IC = 0.43mA)
6
Rev. 2.5 19.05.2015
IGB30N60T
q
TRENCHSTOP™ Series
*) Eon and Ets include losses
due to diode recovery
5.0mJ
*) E on and E ts include losses
Ets*
due to diode recovery
4.0mJ
3.0mJ
2.0mJ
Eoff
1.0mJ
E, SWITCHING ENERGY LOSSES
E, SWITCHING ENERGY LOSSES
E ts *
3.0m J
E off
2.0m J
1.0m J
E on *
Eon*
0.0m J
0.0mJ
0A
10A
20A
30A
40A

50A

IC, COLLECTOR CURRENT
*) Eon and Ets include losses
due to diode recovery
*) E on and E ts include losses
Eoff
Eon*
due to diode recovery
3.0m J
E, SWITCHING ENERGY LOSSES
E, SWITCHING ENERGY LOSSES
1.5mJ
0.5mJ

Figure 14. Typical switching energy losses
as a function of gate resistor
(inductive load, TJ = 175°C,
VCE = 400V, VGE = 0/15V, IC = 30A,
Dynamic test circuit in Figure E)
Ets*
1.0mJ

RG, GATE RESISTOR
Figure 13. Typical switching energy losses
as a function of collector current
(inductive load, TJ = 175°C,
VCE = 400V, VGE = 0/15V, rG = 10Ω,
Dynamic test circuit in Figure E)
2.0mJ

2.5m J
2.0m J
E ts *
1.5m J
E off
1.0m J
E on *
0.5m J
0.0mJ
25°C
50°C
75°C
0.0m J
300V
100°C 125°C 150°C
TJ, JUNCTION TEMPERATURE
Figure 15. Typical switching energy losses
as a function of junction
temperature
(inductive load, VCE = 400V,
VGE = 0/15V, IC = 30A, rG = 10Ω,
Dynamic test circuit in Figure E)
IFAG IPC TD VLS
350V
400V
450V
500V
550V
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 16. Typical switching energy losses
as a function of collector emitter
voltage
(inductive load, TJ = 175°C,
VGE = 0/15V, IC = 30A, rG = 10Ω,
Dynamic test circuit in Figure E)
7
Rev. 2.5 19.05.2015
C iss
1nF
15V
120V
c, CAPACITANCE
VGE, GATE-EMITTER VOLTAGE
TRENCHSTOP™ Series
IGB30N60T
q
480V
10V
5V
C oss
100pF
C rss
0V
0nC
30nC
60nC
90nC 120nC 150nC 180nC
0V
QGE, GATE CHARGE
10V
20V
30V
40V
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 17. Typical gate charge
(IC=30 A)
Figure 18. Typical capacitance as a function
of collector-emitter voltage
(VGE=0V, f = 1 MHz)
tSC, SHORT CIRCUIT WITHSTAND TIME
IC(sc), short circuit COLLECTOR CURRENT
12µs
400A
300A
200A
100A
0A
12V
14V
16V
8µs
6µs
4µs
2µs
0µs
10V
18V
VGE, GATE-EMITTETR VOLTAGE
Figure 19. Typical short circuit collector
current as a function of gateemitter voltage
(VCE  400V, Tj  150C)
IFAG IPC TD VLS
10µs
11V
12V
13V
14V
VGE, GATE-EMITETR VOLTAGE
Figure 20. Short circuit withstand time as a
function of gate-emitter voltage
(VCE=400V, start at TJ=25°C,
TJmax<150°C)
8
Rev. 2.5 19.05.2015
TRENCHSTOP™ Series
IGB30N60T
q
ZthJC, TRANSIENT THERMAL IMPEDANCE
D=0.5
0.2
-1
10 K/W
0.1
R,(K/W)
0.29566
0.25779
0.19382
0.05279
0.05
0.02
0.01
-2
10 K/W
R1
, (s)
6.478*10-2
6.12*10-3
4.679*10-4
6.45*10-5
R2
C 1 =  1 /R 1
C 2 =  2 /R 2
single pulse
1µs
10µs 100µs
1ms
10ms 100ms
tP, PULSE WIDTH
Figure 21. IGBT transient thermal
impedance
(D = tp / T)
IFAG IPC TD VLS
9
Rev. 2.5 19.05.2015
TRENCHSTOP™ Series
IGB30N60T
q
PG-TO263-3
IFAG IPC TD VLS
10
Rev. 2.5 19.05.2015
TRENCHSTOP™ Series
IGB30N60T
q
i,v
tr r =tS +tF
diF /dt
Qr r =QS +QF
tr r
IF
tS
QS
Ir r m
tF
QF
10% Ir r m
dir r /dt
90% Ir r m
t
VR
Figure C. Definition of diodes
switching characteristics
1
2
r1
n
r2
rn
Tj (t)
p(t)
r1
r2
rn
Figure A. Definition of switching times
TC
Figure D. Thermal equivalent
circuit
Figure B. Definition of switching losses
IFAG IPC TD VLS
11
Rev. 2.5 19.05.2015
TRENCHSTOP™ Series
IGB30N60T
q
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2015 Infineon Technologies AG
All Rights Reserved.
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IFAG IPC TD VLS
12
Rev. 2.5 19.05.2015