TRENCHSTOP™ Series IGB15N60T q Low Loss IGBT : IGBT in TRENCHSTOP™ and Fieldstop technology C G Features: Very low VCE(sat) 1.5V (typ.) Maximum Junction Temperature 175°C Short circuit withstand time 5s Designed for frequency inverters for washing machines, fans, pumps and vacuum cleaners TRENCHSTOP™ technology for 600V applications offers : - very tight parameter distribution - high ruggedness, temperature stable behavior - very high switching speed Positive temperature coefficient in VCE(sat) Low EMI Low Gate Charge Pb-free lead plating; RoHS compliant Qualified according to JEDEC1 for target applications Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/ Type IGB15N60T E PG-TO263-3 VCE IC VCE(sat),Tj=25°C Tj,max Marking Code Package 600V 15A 1.5V 175C G15T60 PG-TO263-3 Maximum Ratings Parameter Symbol Value Collector-emitter voltage, Tj ≥ 25C VCE 600 IC 26 Unit V DC collector current, limited by Tjmax TC = 25C, value limited by bondwire 23 TC = 100C A Pulsed collector current, tp limited by Tjmax ICpul s 45 Turn off safe operating area, VCE = 600V, Tj = 175C, tp = 1µs - 45 Gate-emitter voltage VGE 20 V tSC 5 s Power dissipation TC = 25C Ptot 130 W Operating junction temperature Tj -40...+175 Storage temperature Tstg -55...+150 Short circuit withstand time 2) VGE = 15V, VCC 400V, Tj 150C Soldering temperature (reflow soldering, MSL1) 1 2) C 260 J-STD-020 and JESD-022 Allowed number of short circuits: <1000; time between short circuits: >1s. IFAG IPC TD VLS 1 Rev. 2.6 30.04.2015 TRENCHSTOP™ Series IGB15N60T q Thermal Resistance Parameter Symbol Conditions Max. Value Unit 1.15 K/W Characteristic RthJC IGBT thermal resistance, junction – case RthJA Thermal resistance, 6cm² Cu 40 junction – ambient Electrical Characteristic, at Tj = 25 C, unless otherwise specified Parameter Symbol Conditions Value min. Typ. max. 600 - - T j =2 5 C - 1.5 2.05 T j =1 7 5 C - 1.9 - 4.1 4.9 5.7 Unit Static Characteristic Collector-emitter breakdown voltage V ( B R ) C E S V G E = 0V , I C = 0 .2m A Collector-emitter saturation voltage VCE(sat) V V G E = 15 V , I C = 15 A Gate-emitter threshold voltage VGE(th) I C = 21 0µ A , V C E = V G E Zero gate voltage collector current ICES V C E = 60 0 V , V G E = 0V µA T j =2 5 C - - 40 T j =1 7 5 C - - 1000 Gate-emitter leakage current IGES V C E = 0V , V G E =2 0 V - - 100 nA Transconductance gfs V C E = 20 V , I C = 15 A - 8.7 - S Integrated gate resistor RGint Ω - Dynamic Characteristic Input capacitance Ciss V C E = 25 V , - 860 - Output capacitance Coss V G E = 0V , - 55 - Reverse transfer capacitance Crss f= 1 MH z - 24 - Gate charge QGate V C C = 48 0 V, I C =1 5 A - 87 - nC - 7 - nH - 137.5 - A pF V G E = 15 V LE Internal emitter inductance measured 5mm (0.197 in.) from case Short circuit collector current 1) 1) IC(SC) V G E = 15 V ,t S C 5 s V C C = 4 0 0 V, T j = 15 0 C Allowed number of short circuits: <1000; time between short circuits: >1s. IFAG IPC TD VLS 2 Rev. 2.6 30.04.2015 TRENCHSTOP™ Series IGB15N60T q Switching Characteristic, Inductive Load, at Tj=25 C Parameter Symbol Conditions Value min. Typ. max. - 17 - - 11 - - 188 - - 50 - - 0.22 - - 0.35 - - 0.57 - Unit IGBT Characteristic Turn-on delay time td(on) Rise time tr Turn-off delay time td(off) Fall time tf Turn-on energy Eon Turn-off energy Eoff Total switching energy Ets T j=25 C, VCC=400V,IC=15A, VGE=0/15V,rG=15, L =154nH,C =39pF L , C f rom Fig. E Energy losses include “tail” and diode reverse recovery. Diode from IKW30N60T ns mJ Switching Characteristic, Inductive Load, at Tj=175 C Parameter Symbol Conditions Value min. Typ. max. - 17 - - 15 - - 212 - - 79 - - 0.34 - - 0.47 - - 0.81 - Unit IGBT Characteristic Turn-on delay time td(on) Rise time tr Turn-off delay time td(off) Fall time tf Turn-on energy Eon Turn-off energy Eoff Total switching energy Ets IFAG IPC TD VLS T j=175 C, VCC=400V,IC=15A, VGE=0/15V,rG=15, L =154nH,C =39pF L , C f rom Fig. E Energy losses include “tail” and diode reverse recovery. Diode from IKW30N60T 3 ns mJ Rev. 2.6 30.04.2015 TRENCHSTOP™ Series IGB15N60T q t p =2µs 10µs T C =80°C 30A IC, COLLECTOR CURRENT IC, COLLECTOR CURRENT 40A T C =110°C 20A Ic 10A 10A 50µs 1A 1ms DC 10ms Ic 0A 10Hz 100Hz 1kHz 10kHz 0.1A 1V 100kHz f, SWITCHING FREQUENCY 100V 1000V VCE, COLLECTOR-EMITTER VOLTAGE Figure 1. Collector current as a function of switching frequency (Tj 175C, D = 0.5, VCE = 400V, VGE = 0/15V, rG = 15) Figure 2. Safe operating area (D = 0, TC = 25C, Tj 175C; VGE=0/15V) 120W 25A IC, COLLECTOR CURRENT Ptot, POWER DISSIPATION 10V 100W 80W 60W 40W 20A 15A 10A 5A 20W 0W 25°C __ Icmax --- max. current limited by bondwire 0A 50°C 75°C 100°C 125°C 150°C 25°C TC, CASE TEMPERATURE Figure 3. Power dissipation as a function of case temperature (Tj 175C) IFAG IPC TD VLS 50°C 75°C 100°C 125°C 150°C TC, CASE TEMPERATURE Figure 4. Collector current as a function of case temperature (VGE 15V, Tj 175C) 4 Rev. 2.6 30.04.2015 TRENCHSTOP™ Series IGB15N60T q 40A 40A 30A 35A V G E =20V IC, COLLECTOR CURRENT IC, COLLECTOR CURRENT 35A 15V 25A 13V 11V 20A 9V 15A 7V 10A 5A V G E =20V 30A 15V 13V 25A 11V 20A 9V 15A 7V 10A 5A 0A 0A 0V 1V 2V 3V 0V VCE, COLLECTOR-EMITTER VOLTAGE VCE(sat), COLLECTOR-EMITT SATURATION VOLTAGE IC, COLLECTOR CURRENT 30A 25A 20A 15A 10A T J =175°C 25°C 0A 2V 4V 6V 8V 2.5V IC =30A 2.0V 1.5V I C =15A 1.0V IC =7.5A 0.5V 0.0V 0°C VGE, GATE-EMITTER VOLTAGE Figure 7. Typical transfer characteristic (VCE=20V) IFAG IPC TD VLS 3V Figure 6. Typical output characteristic (Tj = 175°C) 35A 0V 2V VCE, COLLECTOR-EMITTER VOLTAGE Figure 5. Typical output characteristic (Tj = 25°C) 5A 1V 50°C 100°C 150°C TJ, JUNCTION TEMPERATURE Figure 8. Typical collector-emitter saturation voltage as a function of junction temperature (VGE = 15V) 5 Rev. 2.6 30.04.2015 TRENCHSTOP™ Series IGB15N60T q t d(off) t d(off) tf t d(on) 10ns t, SWITCHING TIMES t, SWITCHING TIMES 100ns 100ns tf tr t d(on) tr 1ns 10ns 0A 5A 10A 15A 20A 25A IC, COLLECTOR CURRENT RG, GATE RESISTOR Figure 9. Typical switching times as a function of collector current (inductive load, TJ=175°C, VCE = 400V, VGE = 0/15V, rG = 15Ω, Dynamic test circuit in Figure E) Figure 10. Typical switching times as a function of gate resistor (inductive load, TJ = 175°C, VCE= 400V, VGE = 0/15V, IC = 15A, Dynamic test circuit in Figure E) t d(off) t, SWITCHING TIMES 100ns tf t d(on) 10ns tr 25°C 50°C 75°C 6V m ax. typ. 5V 4V m in. 3V 2V 1V 0V -50°C 100°C 125°C 150°C TJ, JUNCTION TEMPERATURE Figure 11. Typical switching times as a function of junction temperature (inductive load, VCE = 400V, VGE = 0/15V, IC = 15A, rG=15Ω, Dynamic test circuit in Figure E) IFAG IPC TD VLS VGE(th), GATE-EMITT TRSHOLD VOLTAGE 7V 0°C 50°C 100°C 150°C TJ, JUNCTION TEMPERATURE Figure 12. Gate-emitter threshold voltage as a function of junction temperature (IC = 0.21mA) 6 Rev. 2.6 30.04.2015 TRENCHSTOP™ Series *) E on and E ts include losses 1.6m J *) E on and E ts include losses 1.6 m J due to diode recovery due to diode recovery E ts * 1.2m J E off 0.8m J E on * 0.4m J E, SWITCHING ENERGY LOSSES E, SWITCHING ENERGY LOSSES IGB15N60T q E ts * 1.4 m J 1.2 m J 1.0 m J 0.8 m J 0.6 m J E off 0.4 m J E on * 0.0m J 0A 5A 10A 15A 20A 25A 0.2 m J IC, COLLECTOR CURRENT RG, GATE RESISTOR Figure 13. Typical switching energy losses as a function of collector current (inductive load, TJ = 175°C, VCE = 400V, VGE = 0/15V, rG = 15Ω, Dynamic test circuit in Figure E) Figure 14. Typical switching energy losses as a function of gate resistor (inductive load, TJ = 175°C, VCE = 400V, VGE = 0/15V, IC = 15A, Dynamic test circuit in Figure E) 0.9m J 1.2m J *) E on and E ts include losses *) E on and E ts include losses due to diode recovery 0.7m J 0.6m J E ts * 0.5m J 0.4m J E off 0.3m J E on * 0.2m J 25°C due to diode recovery 1.0m J E, SWITCHING ENERGY LOSSES E, SWITCHING ENERGY LOSSES 0.8m J 0.8m J E ts * 0.6m J E off 0.4m J 0.2m J E on * 0.0m J 300V 50°C TJ, JUNCTION TEMPERATURE Figure 15. Typical switching energy losses as a function of junction temperature (inductive load, VCE = 400V, VGE = 0/15V, IC = 15A, rG = 15Ω, Dynamic test circuit in Figure E) IFAG IPC TD VLS 350V 400V 450V 75°C 100°C 125°C 150°C VCE, COLLECTOR-EMITTER VOLTAGE Figure 16. Typical switching energy losses as a function of collector emitter voltage (inductive load, TJ = 175°C, VGE = 0/15V, IC = 15A, rG = 15Ω, Dynamic test circuit in Figure E) 7 Rev. 2.6 30.04.2015 TRENCHSTOP™ Series IGB15N60T q 1nF 15V 120V 480V c, CAPACITANCE VGE, GATE-EMITTER VOLTAGE C iss 10V 100pF C oss 5V C rss 0V 0nC 20nC 40nC 60nC 80nC 100nC 10pF QGE, GATE CHARGE 0V 10V 20V 30V 40V 50V VCE, COLLECTOR-EMITTER VOLTAGE Figure 17. Typical gate charge (IC=15 A) Figure 18. Typical capacitance as a function of collector-emitter voltage (VGE=0V, f = 1 MHz) tSC, SHORT CIRCUIT WITHSTAND TIME IC(sc), short circuit COLLECTOR CURRENT 12µs 200A 150A 100A 50A 0A 12V 14V 16V 8µs 6µs 4µs 2µs 0µs 10V 18V VGE, GATE-EMITTETR VOLTAGE Figure 19. Typical short circuit collector current as a function of gateemitter voltage (VCE 400V, Tj 150C) IFAG IPC TD VLS 10µs 11V 12V 13V 14V VGE, GATE-EMITETR VOLTAGE Figure 20. Short circuit withstand time as a function of gate-emitter voltage (VCE=400V, start at TJ=25°C, TJmax<150°C) 8 Rev. 2.6 30.04.2015 TRENCHSTOP™ Series IGB15N60T q 0 ZthJC, TRANSIENT THERMAL IMPEDANCE 10 K/W D=0.5 0.2 R,(K/W) 0.13265 0.37007 0.30032 0.34701 0.1 -1 10 K/W R1 , (s) 5.67*10-2 1.558*10-2 2.147*10-3 2.724*10-4 R2 0.05 0.02 C 1 = 1 /R 1 C 2 = 2 /R 2 0.01 single pulse -2 10 K/W 1µs 10µs 100µs 1ms 10ms 100ms tP, PULSE WIDTH Figure 21. IGBT transient thermal impedance (D = tp / T) IFAG IPC TD VLS 9 Rev. 2.6 30.04.2015 TRENCHSTOP™ Series IGB15N60T q PG-TO263-3 IFAG IPC TD VLS 10 Rev. 2.6 30.04.2015 TRENCHSTOP™ Series IGB15N60T q i,v tr r =tS +tF diF /dt Qr r =QS +QF tr r IF tS QS Ir r m tF QF 10% Ir r m dir r /dt 90% Ir r m t VR Figure C. Definition of diodes switching characteristics 1 2 r1 n r2 rn Tj (t) p(t) r1 r2 rn Figure A. Definition of switching times TC Figure D. Thermal equivalent circuit Figure B. Definition of switching losses IFAG IPC TD VLS 11 Rev. 2.6 30.04.2015 TRENCHSTOP™ Series IGB15N60T q Published by Infineon Technologies AG 81726 Munich, Germany © 2015 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. The Infineon Technologies component described in this Data Sheet may be used in life-support devices or systems and/or automotive, aviation and aerospace applications or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support, automotive, aviation and aerospace device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. IFAG IPC TD VLS 12 Rev. 2.6 30.04.2015