IGBT Highspeed5IGBTinTRENCHSTOPTM5technology IGP40N65H5,IGW40N65H5 650VIGBThighspeedswitchingseriesfifthgeneration Datasheet IndustrialPowerControl IGP40N65H5,IGW40N65H5 Highspeedswitchingseriesfifthgeneration Highspeed5IGBTinTRENCHSTOPTM5technology FeaturesandBenefits: C HighspeedH5technologyoffering •Best-in-Classefficiencyinhardswitchingandresonant topologies •PlugandplayreplacementofpreviousgenerationIGBTs •650Vbreakdownvoltage •LowgatechargeQG •Maximumjunctiontemperature175°C •QualifiedaccordingtoJEDECfortargetapplications •Pb-freeleadplating;RoHScompliant •CompleteproductspectrumandPSpiceModels: http://www.infineon.com/igbt/ G E Applications: 1 2 3 •Solarconverters •Uninterruptiblepowersupplies •Weldingconverters •Midtohighrangeswitchingfrequencyconverters Packagepindefinition: •Pin1-gate •Pin2&backside-collector •Pin3-emitter KeyPerformanceandPackageParameters Type VCE IC VCEsat,Tvj=25°C Tvjmax Marking Package IGP40N65H5 650V 40A 1.65V 175°C G40EH5 PG-TO220-3 IGW40N65H5 650V 40A 1.65V 175°C G40EH5 PG-TO247-3 2 Rev.2.1,2015-04-30 IGP40N65H5,IGW40N65H5 Highspeedswitchingseriesfifthgeneration TableofContents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical Characteristics Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Package Drawing PG-TO220-3 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12 Package Drawing PG-TO247-3 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13 Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15 3 Rev.2.1,2015-04-30 IGP40N65H5,IGW40N65H5 Highspeedswitchingseriesfifthgeneration MaximumRatings Foroptimumlifetimeandreliability,Infineonrecommendsoperatingconditionsthatdonotexceed80%ofthemaximumratingsstatedinthisdatasheet. Parameter Symbol Value Unit Collector-emittervoltage,Tvj≥25°C VCE 650 V DCcollectorcurrent,limitedbyTvjmax TC=25°C TC=100°C IC 74.0 46.0 A Pulsedcollectorcurrent,tplimitedbyTvjmax ICpuls 120.0 A Turn off safe operating area VCE≤650V,Tvj≤175°C,tp=1µs - 120.0 A Gate-emitter voltage TransientGate-emittervoltage(tp≤10µs,D<0.010) VGE ±20 ±30 V PowerdissipationTC=25°C PowerdissipationTC=100°C Ptot 250.0 125.0 W Operating junction temperature Tvj -40...+175 °C Storage temperature Tstg -55...+150 °C PG-TO220-3 PG-TO247-3 260 260 °C M 0.6 Nm Soldering temperature, wave soldering 1.6mm (0.063in.) from case for 10s Mounting torque, M3 screw Maximum of mounting processes: 3 ThermalResistance Parameter Characteristic Symbol Conditions IGBT thermal resistance, junction - case Rth(j-c) Thermal resistance junction - ambient Rth(j-a) Max.Value Unit 0.60 K/W 62 40 K/W PG-TO220-3 PG-TO247-3 ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified Parameter Symbol Conditions Value Unit min. typ. max. 650 - - Collector-emitter saturation voltage VCEsat VGE=15.0V,IC=40.0A Tvj=25°C Tvj=125°C Tvj=175°C - 1.65 1.85 1.95 2.10 - Gate-emitter threshold voltage VGE(th) IC=0.40mA,VCE=VGE 3.2 4.0 4.8 Zero gate voltage collector current ICES VCE=650V,VGE=0V Tvj=25°C Tvj=175°C - - Gate-emitter leakage current IGES VCE=0V,VGE=20V - - 100 nA Transconductance gfs VCE=20V,IC=40.0A - 50.0 - S StaticCharacteristic Collector-emitter breakdown voltage V(BR)CES VGE=0V,IC=0.20mA 4 V V V 40.0 µA 2000.0 Rev.2.1,2015-04-30 IGP40N65H5,IGW40N65H5 Highspeedswitchingseriesfifthgeneration ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified Parameter Symbol Conditions Value min. typ. max. - 2500 - - 40 - - 9 - Unit DynamicCharacteristic Input capacitance Cies Output capacitance Coes Reverse transfer capacitance Cres Gate charge QG VCC=520V,IC=40.0A, VGE=15V - 95.0 - nC Internal emitter inductance measured 5mm (0.197 in.) from case LE PG-TO220-3 PG-TO247-3 - 7.0 13.0 - nH VCE=25V,VGE=0V,f=1MHz pF SwitchingCharacteristic,InductiveLoad Parameter Symbol Conditions Value Unit min. typ. max. - 22 - ns - 12 - ns - 165 - ns - 13 - ns - 0.39 - mJ - 0.12 - mJ - 0.51 - mJ - 19 - ns - 4 - ns - 190 - ns - 24 - ns - 0.09 - mJ - 0.05 - mJ - 0.14 - mJ IGBTCharacteristic,atTvj=25°C Turn-on delay time td(on) Rise time tr Turn-off delay time td(off) Fall time tf Turn-on energy Eon Turn-off energy Eoff Total switching energy Ets Turn-on delay time td(on) Rise time tr Turn-off delay time td(off) Fall time tf Turn-on energy Eon Turn-off energy Eoff Total switching energy Ets Tvj=25°C, VCC=400V,IC=20.0A, VGE=0.0/15.0V, RG(on)=15.0Ω,RG(off)=15.0Ω, Lσ=30nH,Cσ=30pF Lσ,CσfromFig.E Energy losses include “tail” and diode reverse recovery. Tvj=25°C, VCC=400V,IC=5.0A, VGE=0.0/15.0V, RG(on)=15.0Ω,RG(off)=15.0Ω, Lσ=30nH,Cσ=30pF Lσ,CσfromFig.E Energy losses include “tail” and diode reverse recovery. 5 Rev.2.1,2015-04-30 IGP40N65H5,IGW40N65H5 Highspeedswitchingseriesfifthgeneration SwitchingCharacteristic,InductiveLoad Parameter Symbol Conditions Value Unit min. typ. max. - 20 - ns - 12 - ns - 195 - ns - 22 - ns - 0.54 - mJ - 0.22 - mJ - 0.76 - mJ - 19 - ns - 5 - ns - 240 - ns - 33 - ns - 0.15 - mJ - 0.07 - mJ - 0.22 - mJ IGBTCharacteristic,atTvj=150°C Turn-on delay time td(on) Rise time tr Turn-off delay time td(off) Fall time tf Turn-on energy Eon Turn-off energy Eoff Total switching energy Ets Turn-on delay time td(on) Rise time tr Turn-off delay time td(off) Fall time tf Turn-on energy Eon Turn-off energy Eoff Total switching energy Ets Tvj=150°C, VCC=400V,IC=20.0A, VGE=0.0/15.0V, RG(on)=15.0Ω,RG(off)=15.0Ω, Lσ=30nH,Cσ=30pF Lσ,CσfromFig.E Energy losses include “tail” and diode reverse recovery. Tvj=150°C, VCC=400V,IC=5.0A, VGE=0.0/15.0V, RG(on)=15.0Ω,RG(off)=15.0Ω, Lσ=30nH,Cσ=30pF Lσ,CσfromFig.E Energy losses include “tail” and diode reverse recovery. 6 Rev.2.1,2015-04-30 IGP40N65H5,IGW40N65H5 Highspeedswitchingseriesfifthgeneration 275 250 100 10 Ptot,POWERDISSIPATION[W] IC,COLLECTORCURRENT[A] 225 tp=1µs 10µs 50µs 100µs 1 200µs 200 175 150 125 100 75 500µs 50 DC 25 0.1 1 10 100 0 1000 25 VCE,COLLECTOR-EMITTERVOLTAGE[V] 50 75 100 125 150 175 TC,CASETEMPERATURE[°C] Figure 1. Forwardbiassafeoperatingarea (D=0,TC=25°C,Tvj≤175°C;VGE=15V. RecommendeduseatVGE≥7.5V) Figure 2. Powerdissipationasafunctionofcase temperature (Tvj≤175°C) 80 120 70 VGE=20V 60 IC,COLLECTORCURRENT[A] IC,COLLECTORCURRENT[A] 100 50 40 30 20 18V 80 15V 12V 60 10V 8V 7V 40 6V 5V 20 10 0 25 50 75 100 125 150 0 175 TC,CASETEMPERATURE[°C] 0 1 2 3 4 5 VCE,COLLECTOR-EMITTERVOLTAGE[V] Figure 3. Collectorcurrentasafunctionofcase temperature (VGE≥15V,Tvj≤175°C) Figure 4. Typicaloutputcharacteristic (Tvj=25°C) 7 Rev.2.1,2015-04-30 IGP40N65H5,IGW40N65H5 Highspeedswitchingseriesfifthgeneration 120 120 Tj=25°C Tj=150°C 100 100 IC,COLLECTORCURRENT[A] IC,COLLECTORCURRENT[A] VGE=20V 18V 80 15V 12V 60 10V 8V 7V 40 6V 80 60 40 5V 20 0 20 0 1 2 3 4 0 5 4.5 VCE,COLLECTOR-EMITTERVOLTAGE[V] 5.5 6.0 6.5 7.0 7.5 8.0 8.5 VGE,GATE-EMITTERVOLTAGE[V] Figure 5. Typicaloutputcharacteristic (Tvj=150°C) Figure 6. Typicaltransfercharacteristic (VCE=20V) 2.50 1000 IC=10A IC=20A IC=40A 2.25 td(off) tf td(on) tr 2.00 t,SWITCHINGTIMES[ns] VCEsat,COLLECTOR-EMITTERSATURATION[V] 5.0 1.75 1.50 1.25 100 10 1.00 0.75 0.50 0 25 50 75 100 125 150 1 175 Tvj,JUNCTIONTEMPERATURE[°C] 0 20 40 60 80 100 120 IC,COLLECTORCURRENT[A] Figure 7. Typicalcollector-emittersaturationvoltageas Figure 8. Typicalswitchingtimesasafunctionof afunctionofjunctiontemperature collectorcurrent (VGE=15V) (inductiveload,Tvj=150°C,VCE=400V, VGE=15/0V,rG=15Ω,Dynamictestcircuitin Figure E) 8 Rev.2.1,2015-04-30 IGP40N65H5,IGW40N65H5 Highspeedswitchingseriesfifthgeneration 1000 1000 td(off) tf td(on) tr t,SWITCHINGTIMES[ns] t,SWITCHINGTIMES[ns] td(off) tf td(on) tr 100 10 1 5 15 25 35 45 55 65 75 100 10 1 85 25 rG,GATERESISTOR[Ω] Figure 9. Typicalswitchingtimesasafunctionofgate resistor (inductiveload,Tvj=150°C,VCE=400V, VGE=15/0V,IC=20A,Dynamictestcircuitin Figure E) 100 125 150 175 8 typ. min. max. 5.0 Eoff Eon Ets 7 E,SWITCHINGENERGYLOSSES[mJ] VGE(th),GATE-EMITTERTHRESHOLDVOLTAGE[V] 75 Figure 10. Typicalswitchingtimesasafunctionof junctiontemperature (inductiveload,VCE=400V,VGE=15/0V, IC=20A,rG=15Ω,Dynamictestcircuitin Figure E) 5.5 4.5 4.0 3.5 3.0 2.5 2.0 6 5 4 3 2 1 1.5 1.0 50 Tvj,JUNCTIONTEMPERATURE[°C] 0 25 50 75 100 125 0 150 Tvj,JUNCTIONTEMPERATURE[°C] 0 20 40 60 80 100 120 IC,COLLECTORCURRENT[A] Figure 11. Gate-emitterthresholdvoltageasafunction ofjunctiontemperature (IC=0.4mA) 9 Figure 12. Typicalswitchingenergylossesasa functionofcollectorcurrent (inductiveload,Tvj=150°C,VCE=400V, VGE=15/0V,rG=15Ω,Dynamictestcircuitin Figure E) Rev.2.1,2015-04-30 IGP40N65H5,IGW40N65H5 Highspeedswitchingseriesfifthgeneration 1.6 0.8 Eoff Eon Ets 0.7 E,SWITCHINGENERGYLOSSES[mJ] E,SWITCHINGENERGYLOSSES[mJ] 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 Eoff Eon Ets 0.6 0.5 0.4 0.3 0.2 0.1 5 15 25 35 45 55 65 75 0.0 85 25 rG,GATERESISTOR[Ω] Figure 13. Typicalswitchingenergylossesasa functionofgateresistor (inductiveload,Tvj=150°C,VCE=400V, VGE=15/0V,IC=20A,Dynamictestcircuitin Figure E) 125 150 175 130V 520V 14 VGE,GATE-EMITTERVOLTAGE[V] E,SWITCHINGENERGYLOSSES[mJ] 100 16 Eoff Eon Ets 0.8 0.7 0.6 0.5 0.4 0.3 0.2 12 10 8 6 4 2 0.1 0.0 200 75 Figure 14. Typicalswitchingenergylossesasa functionofjunctiontemperature (inductiveload,VCE=400V,VGE=15/0V, IC=20A,rG=15Ω,Dynamictestcircuitin Figure E) 1.0 0.9 50 Tvj,JUNCTIONTEMPERATURE[°C] 250 300 350 400 450 0 500 VCE,COLLECTOR-EMITTERVOLTAGE[V] Figure 15. Typicalswitchingenergylossesasa functionofcollectoremittervoltage (inductiveload,Tvj=150°C,VGE=15/0V, IC=20A,rG=15Ω,Dynamictestcircuitin Figure E) 0 20 40 60 80 100 QGE,GATECHARGE[nC] Figure 16. Typicalgatecharge (IC=40A) 10 Rev.2.1,2015-04-30 IGP40N65H5,IGW40N65H5 Highspeedswitchingseriesfifthgeneration 1E+4 1 Zth(j-c),TRANSIENTTHERMALRESISTANCE[K/W] Cies Coes Cres C,CAPACITANCE[pF] 1000 100 10 1 0 5 10 15 20 25 D=0.5 0.2 0.05 0.02 0.01 single pulse 0.01 i: 1 2 3 4 ri[K/W]: 0.08245484 0.144197 0.2151774 0.1581708 τi[s]: 7.3E-5 7.0E-4 0.01235548 0.08020881 0.001 1E-6 30 VCE,COLLECTOR-EMITTERVOLTAGE[V] 0.1 0.1 1E-5 1E-4 0.001 0.01 0.1 1 tp,PULSEWIDTH[s] Figure 17. Typicalcapacitanceasafunctionof collector-emittervoltage (VGE=0V,f=1MHz) Figure 18. IGBTtransientthermalresistance (D=tp/T) 11 Rev.2.1,2015-04-30 IGP40N65H5,IGW40N65H5 Highspeedswitchingseriesfifthgeneration Package Drawing PG-TO220-3 12 Rev.2.1,2015-04-30 IGP40N65H5,IGW40N65H5 Highspeedswitchingseriesfifthgeneration Package Drawing PG-TO247-3 13 Rev.2.1,2015-04-30 IGP40N65H5,IGW40N65H5 Highspeedswitchingseriesfifthgeneration Testing Conditions VGE(t) I,V 90% VGE t rr = t a + t b Q rr = Q a + Q b dIF/dt a 10% VGE b t Qa IC(t) Qb dI 90% IC 90% IC 10% IC 10% IC Figure C. Definition of diode switching characteristics t VCE(t) t td(off) tf td(on) t tr Figure A. VGE(t) 90% VGE Figure D. 10% VGE t IC(t) CC 2% IC t Figure E. Dynamic test circuit Parasitic inductance Ls, parasitic capacitor Cs, relief capacitor Cr, (only for ZVT switching) VCE(t) t2 E off = t4 VCE x IC x dt E t1 t1 on = VCE x IC x d t 2% VCE t3 t2 t3 t4 t Figure B. 14 Rev.2.1,2015-04-30 IGP40N65H5,IGW40N65H5 Highspeedswitchingseriesfifthgeneration RevisionHistory IGP40N65H5, IGW40N65H5 Revision:2015-04-30,Rev.2.1 Previous Revision Revision Date Subjects (major changes since last revision) 1.1 2012-11-09 Preliminary data sheet 1.2 2013-12-16 New Marking Pattern 1.3 2014-12-04 Minor changes Fig.1, Fig.14 and typ. Eoff at 150°C to 0.22mJ 2.1 2015-04-30 Final data sheet WeListentoYourComments Anyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall? Yourfeedbackwillhelpustocontinuouslyimprovethequalityofthisdocument. Pleasesendyourproposal(includingareferencetothisdocument)to:[email protected] Publishedby InfineonTechnologiesAG 81726Munich,Germany 81726München,Germany ©2015InfineonTechnologiesAG AllRightsReserved. LegalDisclaimer Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics. Withrespecttoanyexamplesorhintsgivenherein,anytypicalvaluesstatedhereinand/oranyinformationregardingthe applicationofthedevice,InfineonTechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind, includingwithoutlimitation,warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty. Information Forfurtherinformationontechnology,deliverytermsandconditionsandprices,pleasecontactthenearestInfineon TechnologiesOffice(www.infineon.com). Warnings Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesin question,pleasecontactthenearestInfineonTechnologiesOffice. TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystems and/orautomotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineon Technologies,ifafailureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support, automotive,aviationandaerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Life supportdevicesorsystemsareintendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustain and/orprotecthumanlife.Iftheyfail,itisreasonabletoassumethatthehealthoftheuserorotherpersonsmaybe endangered. 15 Rev.2.1,2015-04-30