IHW40N60RF Data Sheet (2 MB, EN)

IGBT
ReverseconductingIGBT
IHW40N60RF
ResonantSwitchingSeries
Datasheet
IndustrialPowerControl
IHW40N60RF
ResonantSwitchingSeries
ReverseconductingIGBT
Features:
C
•Powerfulmonolithicbodydiodewithlowforwardvoltage
designedforsoftcommutationonly
•TRENCHSTOPTMtechnologyapplicationsoffers:
-verytightparameterdistribution
-highruggedness,temperaturestablebehavior
-lowVCEsat
•LowEMI
•QualifiedaccordingtoJESD-022fortargetapplications
•Pb-freeleadplating;RoHScompliant
•CompleteproductspectrumandPSpiceModels:
http://www.infineon.com/igbt/
G
E
Applications:
•Inductivecooking
•Inverterizedmicrowaveovens
•Resonantconverters
•Softswitchingapplications
G
C
E
KeyPerformanceandPackageParameters
Type
IHW40N60RF
VCE
IC
VCEsat,Tvj=25°C
Tvjmax
Marking
Package
600V
40A
1.85V
175°C
H40RF60
PG-TO247-3
2
Rev.2.6,2015-01-26
IHW40N60RF
ResonantSwitchingSeries
TableofContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Electrical Characteristics Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13
Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15
3
Rev.2.6,2015-01-26
IHW40N60RF
ResonantSwitchingSeries
MaximumRatings
Foroptimumlifetimeandreliability,Infineonrecommendsoperatingconditionsthatdonotexceed80%ofthemaximumratingsstatedinthisdatasheet.
Parameter
Symbol
Value
Unit
Collector-emittervoltage,Tvj≥25°C
VCE
600
V
DCcollectorcurrent,limitedbyTvjmax
TC=25°C
TC=100°C
IC
80.0
40.0
A
Pulsedcollectorcurrent,tplimitedbyTvjmax
ICpuls
120.0
A
Turn off safe operating area
VCE≤600V,Tvj≤175°C,tp=1µs
-
120.0
A
Diodeforwardcurrent,limitedbyTvjmax
TC=25°C
TC=100°C
IF
80.0
40.0
A
Diodepulsedcurrent,tplimitedbyTvjmax
IFpuls
120.0
A
Gate-emitter voltage
VGE
±20
V
PowerdissipationTC=25°C
PowerdissipationTC=100°C
Ptot
305.0
152.5
W
Operating junction temperature
Tvj
-40...+175
°C
Storage temperature
Tstg
-55...+150
°C
Soldering temperature,
wave soldering 1.6mm (0.063in.) from case for 10s
°C
260
Mounting torque, M3 screw
Maximum of mounting processes: 3
M
0.6
Nm
ThermalResistance
Parameter
Characteristic
Symbol Conditions
Max.Value
Unit
IGBT thermal resistance,
junction - case
Rth(j-c)
0.49
K/W
Diode thermal resistance,
junction - case
Rth(j-c)
0.49
K/W
Thermal resistance
junction - ambient
Rth(j-a)
40
K/W
4
Rev.2.6,2015-01-26
IHW40N60RF
ResonantSwitchingSeries
ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified
Parameter
Symbol Conditions
Value
Unit
min.
typ.
max.
600
-
-
V
VGE=15.0V,IC=40.0A
Tvj=25°C
Tvj=175°C
-
1.85
2.30
2.40
-
V
-
1.75
2.00
2.20
-
V
4.1
4.9
5.7
V
StaticCharacteristic
Collector-emitter breakdown voltage V(BR)CES VGE=0V,IC=0.50mA
Collector-emitter saturation voltage VCEsat
Diode forward voltage
VF
VGE=0V,IF=40.0A
Tvj=25°C
Tvj=175°C
Gate-emitter threshold voltage
VGE(th)
IC=0.58mA,VCE=VGE
Zero gate voltage collector current
ICES
VCE=600V,VGE=0V
Tvj=25°C
Tvj=175°C
-
-
Gate-emitter leakage current
IGES
VCE=0V,VGE=20V
-
-
100
nA
Transconductance
gfs
VCE=20V,IC=40.0A
-
24.0
-
S
Integrated gate resistor
rG
40.0 µA
3000.0
Ω
none
ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified
Parameter
Symbol Conditions
Value
Unit
min.
typ.
max.
-
2400
-
-
88
-
-
68
-
-
220.0
-
nC
-
13.0
-
nH
DynamicCharacteristic
Input capacitance
Cies
Output capacitance
Coes
Reverse transfer capacitance
Cres
Gate charge
QG
Internal emitter inductance
measured 5mm (0.197 in.) from
case
LE
VCE=25V,VGE=0V,f=1MHz
VCC=480V,IC=40.0A,
VGE=15V
pF
SwitchingCharacteristic,InductiveLoad
Parameter
Symbol Conditions
Value
Unit
min.
typ.
max.
-
175
-
ns
-
14
-
ns
-
0.56
-
mJ
IGBTCharacteristic,atTvj=25°C
Turn-off delay time
td(off)
Fall time
tf
Turn-off energy
Eoff
Tvj=25°C,
VCC=400V,IC=40.0A,
VGE=0.0/15.0V,
RG(on)=5.6Ω,RG(off)=5.6Ω,
Lσ=90nH,Cσ=67pF
Lσ,CσfromFig.E
Energy losses include “tail” and
diode reverse recovery.
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Rev.2.6,2015-01-26
IHW40N60RF
ResonantSwitchingSeries
SwitchingCharacteristic,InductiveLoad
Parameter
Symbol Conditions
Value
Unit
min.
typ.
max.
-
205
-
ns
-
23
-
ns
-
0.79
-
mJ
IGBTCharacteristic,atTvj=125°C
Turn-off delay time
td(off)
Fall time
tf
Turn-off energy
Eoff
Tvj=125°C,
VCC=400V,IC=40.0A,
VGE=0.0/15.0V,
RG(on)=5.6Ω,RG(off)=5.6Ω,
Lσ=90nH,Cσ=67pF
Lσ,CσfromFig.E
Energy losses include “tail” and
diode reverse recovery.
6
Rev.2.6,2015-01-26
IHW40N60RF
ResonantSwitchingSeries
140
100
IC,COLLECTORCURRENT[A]
IC,COLLECTORCURRENT[A]
120
100
TC=80°
80
TC=110°
60
40
tp=1µs
10µs
10
50µs
100µs
200µs
500µs
1
DC
20
0
1
10
100
0.1
1000
1
f,SWITCHINGFREQUENCY[kHz]
10
100
1000
VCE,COLLECTOR-EMITTERVOLTAGE[V]
Figure 1. Collectorcurrentasafunctionofswitching
frequency
(Tvj≤175°C,D=0.5,VCE=400V,VGE=0/15V,
RG=5.6Ω)
Figure 2. Forwardbiassafeoperatingarea
(D=0,TC=25°C,Tvj≤175°C;VGE=15V)
350
80
IC,COLLECTORCURRENT[A]
Ptot,POWERDISSIPATION[W]
300
250
200
150
100
60
40
20
50
0
25
50
75
100
125
150
0
175
TC,CASETEMPERATURE[°C]
25
50
75
100
125
150
175
TC,CASETEMPERATURE[°C]
Figure 3. Powerdissipationasafunctionofcase
temperature
(Tvj≤175°C)
Figure 4. Collectorcurrentasafunctionofcase
temperature
(VGE≥15V,Tvj≤175°C)
7
Rev.2.6,2015-01-26
IHW40N60RF
ResonantSwitchingSeries
120
120
VGE=20V
VGE=20V
100
17V
IC,COLLECTORCURRENT[A]
IC,COLLECTORCURRENT[A]
100
15V
80
13V
11V
9V
60
7V
40
20
0
17V
15V
80
13V
11V
9V
60
7V
40
20
0
1
2
3
4
0
5
0
VCE,COLLECTOR-EMITTERVOLTAGE[V]
Figure 5. Typicaloutputcharacteristic
(Tvj=25°C)
3
4
5
4.0
VCEsat,COLLECTOR-EMITTERSATURATION[V]
Tj=25°C
Tj=175°C
100
IC,COLLECTORCURRENT[A]
2
Figure 6. Typicaloutputcharacteristic
(Tvj=175°C)
120
80
60
40
20
0
1
VCE,COLLECTOR-EMITTERVOLTAGE[V]
4
5
6
7
8
9
10
11
IC=20A
IC=40A
IC=80A
3.5
3.0
2.5
2.0
1.5
1.0
12
VGE,GATE-EMITTERVOLTAGE[V]
25
50
75
100
125
150
175
Tvj,JUNCTIONTEMPERATURE[°C]
Figure 7. Typicaltransfercharacteristic
(VCE=20V)
Figure 8. Typicalcollector-emittersaturationvoltageas
afunctionofjunctiontemperature
(VGE=15V)
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Rev.2.6,2015-01-26
IHW40N60RF
ResonantSwitchingSeries
1000
td(off)
tf
td(off)
tf
t,SWITCHINGTIMES[ns]
t,SWITCHINGTIMES[ns]
1000
100
10
0
10
20
30
40
50
60
70
100
10
80
0
10
IC,COLLECTORCURRENT[A]
Figure 9. Typicalswitchingtimesasafunctionof
collectorcurrent
(inductiveload,Tvj=175°C,VCE=400V,
VGE=0/15V,RG(on)=5.6Ω,RG(off)=5.6Ω,
dynamic test circuit in Figure E)
40
50
7
VGE(th),GATE-EMITTERTHRESHOLDVOLTAGE[V]
td(off)
tf
t,SWITCHINGTIMES[ns]
30
Figure 10. Typicalswitchingtimesasafunctionofgate
resistance
(inductiveload,Tvj=175°C,VCE=400V,
VGE=0/15V,IC=40A,dynamictestcircuitin
Figure E)
1000
100
10
1
20
RG,GATERESISTANCE[Ω]
25
50
75
100
125
150
6
5
4
3
2
1
175
Tvj,JUNCTIONTEMPERATURE[°C]
Figure 11. Typicalswitchingtimesasafunctionof
junctiontemperature
(inductiveload,VCE=400V,VGE=0/15V,
IC=40A,RG(on)=5.6Ω,RG(off)=5.6Ω,dynamic
test circuit in Figure E)
typ.
min.
max.
0
25
50
75
100
125
150
175
Tvj,JUNCTIONTEMPERATURE[°C]
Figure 12. Gate-emitterthresholdvoltageasafunction
ofjunctiontemperature
(IC=0.58mA)
9
Rev.2.6,2015-01-26
IHW40N60RF
ResonantSwitchingSeries
2.00
3.0
E,SWITCHINGENERGYLOSSES[mJ]
E,SWITCHINGENERGYLOSSES[mJ]
1.75
Eoff
1.50
1.25
1.00
0.75
0.50
2.5
Eoff
2.0
1.5
1.0
0.5
0.25
0.00
0
10
20
30
40
50
60
70
0.0
80
0
10
IC,COLLECTORCURRENT[A]
Figure 13. Typicalswitchingenergylossesasa
functionofcollectorcurrent
(inductiveload,Tvj=175°C,VCE=400V,
VGE=0/15V,RG(on)=5.6Ω,RG(off)=5.6Ω,
dynamic test circuit in Figure E)
40
50
1.00
0.75
E,SWITCHINGENERGYLOSSES[mJ]
E,SWITCHINGENERGYLOSSES[mJ]
30
Figure 14. Typicalswitchingenergylossesasa
functionofgateresistance
(inductiveload,Tvj=175°C,VCE=400V,
VGE=0/15V,IC=40A,dynamictestcircuitin
Figure E)
0.80
Eoff
0.70
0.65
0.60
0.55
0.50
20
RG,GATERESISTANCE[Ω]
25
50
75
100
125
150
Eoff
0.50
0.25
0.00
200
175
Tvj,JUNCTIONTEMPERATURE[°C]
Figure 15. Typicalswitchingenergylossesasa
functionofjunctiontemperature
(inductiveload,VCE=400V,VGE=0/15V,
IC=40A,RG(on)=5.6Ω,RG(off)=5.6Ω,dynamic
test circuit in Figure E)
0.75
300
400
VCE,COLLECTOR-EMITTERVOLTAGE[V]
10
Figure 16. Typicalswitchingenergylossesasa
functionofcollectoremittervoltage
(inductiveload,Tvj=175°C,VGE=0/15V,
IC=40A,RG(on)=5.6Ω,RG(off)=5.6Ω,dynamic
test circuit in Figure E)
Rev.2.6,2015-01-26
IHW40N60RF
ResonantSwitchingSeries
16
120V
480V
12
Cies
Coes
Cres
1000
C,CAPACITANCE[pF]
VGE,GATE-EMITTERVOLTAGE[V]
14
10
8
6
100
4
2
0
0
50
100
150
200
10
250
QGE,GATECHARGE[nC]
20
30
Figure 18. Typicalcapacitanceasafunctionof
collector-emittervoltage
(VGE=0V,f=1MHz)
1
Zth(j-c),TRANSIENTTHERMALIMPEDANCE[K/W]
1
Zth(j-c),TRANSIENTTHERMALIMPEDANCE[K/W]
10
VCE,COLLECTOR-EMITTERVOLTAGE[V]
Figure 17. Typicalgatecharge
(IC=40A)
D=0.5
0.2
0.1
0.1
0.05
0.02
0.01
single pulse
0.01
i:
1
2
3
4
ri[K/W]: 0.0655 0.1301 0.1899
0.1045
τi[s]:
1.4E-4 1.0E-3 0.01054274 0.07949796
0.001
1E-6
0
1E-5
1E-4
0.001
0.01
0.1
D=0.5
0.2
0.05
0.02
0.01
single pulse
0.01
i:
1
2
3
4
ri[K/W]: 0.0655 0.1301 0.1899
0.1045
τi[s]:
1.4E-4 1.0E-3 0.01054274 0.07949796
0.001
1E-6
1
tp,PULSEWIDTH[s]
0.1
0.1
1E-5
1E-4
0.001
0.01
0.1
1
tp,PULSEWIDTH[s]
Figure 19. IGBTtransientthermalimpedance
(D=tp/T)
Figure 20. Diodetransientthermalimpedanceasa
functionofpulsewidth
(D=tp/T)
11
Rev.2.6,2015-01-26
IHW40N60RF
ResonantSwitchingSeries
120
3.00
Tj=25°C
Tj=175°C
IF=20A
IF=40A
IF=80A
2.75
VF,FORWARDVOLTAGE[V]
IF,FORWARDCURRENT[A]
100
80
60
40
2.50
2.25
2.00
1.75
1.50
20
1.25
0
0
1
2
3
1.00
4
VF,FORWARDVOLTAGE[V]
25
50
75
100
125
150
175
Tvj,JUNCTIONTEMPERATURE[°C]
Figure 21. Typicaldiodeforwardcurrentasafunction
offorwardvoltage
12
Figure 22. Typicaldiodeforwardvoltageasafunction
ofjunctiontemperature
Rev.2.6,2015-01-26
IHW40N60RF
ResonantSwitchingSeries
PG-TO247-3
13
Rev.2.6,2015-01-26
IHW40N60RF
ResonantSwitchingSeries
VGE(t)
I,V
90% VGE
t rr = t a + t b
Q rr = Q a + Q b
dIF/dt
a
10% VGE
b
t
Qa
IC(t)
Qb
dI
90% IC
90% IC
10% IC
10% IC
Figure C. Definition of diode switching
characteristics
t
VCE(t)
t
td(off)
tf
td(on)
t
tr
Figure A.
VGE(t)
90% VGE
Figure D.
10% VGE
t
IC(t)
CC
2% IC
t
Figure E. Dynamic test circuit
Parasitic inductance Ls,
parasitic capacitor Cs,
relief capacitor Cr,
(only for ZVT switching)
VCE(t)
t2
E
off
=
t4
VCE x IC x dt
E
t1
t1
on
=
VCE x IC x d t
2% VCE
t3
t2
t3
t4
t
Figure B.
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Rev.2.6,2015-01-26
IHW40N60RF
Resonant Switching Series
Revision History
IHW40N60RF
Revision: 2015-01-26, Rev. 2.6
Previous Revision
Revision
Date
Subjects (major changes since last revision)
0.1
2009-06-15
-
0.2
2010-03-02
-
2.3
2010-03-02
-
2.4
2013-12-10
New value ICES max limit at 175°C
2.5
2014-03-12
Storage temp -55...+150°C
2.6
2015-01-26
Minor changes
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Published by
Infineon Technologies AG
81726 Munich, Germany
81726 München, Germany
© 2015 Infineon Technologies AG
All Rights Reserved.
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With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the
application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind,
including without limitation, warranties of non-infringement of intellectual property rights of any third party.
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For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon
Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances. For information on the types in
question, please contact the nearest Infineon Technologies Office.
The Infineon Technologies component described in this Data Sheet may be used in life-support devices or systems
and/or automotive, aviation and aerospace applications or systems only with the express written approval of Infineon
Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support,
automotive, aviation and aerospace device or system or to affect the safety or effectiveness of that device or system. Life
support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain
and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be
endangered.
15
Rev. 2.6, 2015-01-26