SGP20N60HS SGW20N60HS High Speed IGBT in NPT-technology C • 30% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs G E • Designed for operation above 30 kHz • NPT-Technology for 600V applications offers: - parallel switching capability - moderate Eoff increase with temperature - very tight parameter distribution • • • • PG-TO-220-3-1 PG-TO-247-3 High ruggedness, temperature stable behaviour Pb-free lead plating; RoHS compliant Qualified according to JEDEC1 for target applications Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/ VCE IC Eoff Tj Marking SGP20N60HS 600V 20 240µJ 150°C G20N60HS PG-TO-220-3-1 SGW20N60HS 600V 20 240µJ 150°C G20N60HS PG-TO-247-3 Type Package Maximum Ratings Parameter Symbol Collector-emitter voltage VCE DC collector current IC Value Unit 600 V A TC = 25°C 36 TC = 100°C 20 Pulsed collector current, tp limited by Tjmax ICpuls 80 Turn off safe operating area - 80 Avalanche energy single pulse IC = 20A, VCC=50V, RGE=25Ω start TJ=25°C EAS 115 mJ Gate-emitter voltage static transient (tp<1µs, D<0.05) VGE ±20 ±30 V Short circuit withstand time2) tSC 10 µs Ptot 178 W Operating junction and storage temperature Tj , Tstg -55...+150 °C Time limited operating junction temperature for t < 150h Tj(tl) 175 Soldering temperature, 1.6mm (0.063 in.) from case for 10s - 260 VCE ≤ 600V, Tj ≤ 150°C VGE = 15V, VCC ≤ 600V, Tj ≤ 150°C Power dissipation TC = 25°C 1 2) J-STD-020 and JESD-022 Allowed number of short circuits: <1000; time between short circuits: >1s. Power Semiconductors 1 Rev 2.5 Nov 09 SGP20N60HS SGW20N60HS Thermal Resistance Parameter Symbol Conditions Max. Value Unit 0.7 K/W Characteristic IGBT thermal resistance, junction – case RthJC Thermal resistance, junction – ambient RthJA PG-TO-220-3-1 62 PG-TO-247-3-21 40 Electrical Characteristic, at Tj = 25 °C, unless otherwise specified Parameter Symbol Conditions Value min. Typ. max. 600 - - T j = 25° C 2.8 3.15 T j = 15 0° C 3.5 4.00 4 5 Unit Static Characteristic Collector-emitter breakdown voltage V ( B R ) C E S V G E = 0V, I C = 50 0µA Collector-emitter saturation voltage VCE(sat) V V G E = 15V, I C = 20A Gate-emitter threshold voltage VGE(th) I C = 50 0µA, V C E =V G E Zero gate voltage collector current ICES V C E = 600V ,V G E = 0V 3 µA T j = 25° C - - 40 T j = 15 0° C - - 2500 100 Gate-emitter leakage current IGES V C E = 0V ,V G E = 2 0V - - Transconductance gfs V C E = 20V, I C = 20A - 14 S nA Input capacitance Ciss V C E = 25V, - 1100 pF Output capacitance Coss V G E = 0V, - 105 Reverse transfer capacitance Crss f= 1 M Hz - 64 Gate charge QGate V C C = 4 80V, I C = 20A - 100 nC - 7 nH Dynamic Characteristic V G E = 1 5V Internal emitter inductance LE measured 5mm (0.197 in.) from case Short circuit collector current 1) 1) PG -TO -220-3-1 PG -TO -247-3-21 IC(SC) V G E = 1 5V,t S C ≤10µs V C C ≤ 600V, T j ≤ 150° C 13 - 170 A Allowed number of short circuits: <1000; time between short circuits: >1s. Power Semiconductors 2 Rev 2.5 Nov 09 SGP20N60HS SGW20N60HS Switching Characteristic, Inductive Load, at Tj=25 °C Parameter Symbol Conditions Value min. typ. - 18 - 15 - 207 max. Unit IGBT Characteristic Turn-on delay time td(on) Rise time tr Turn-off delay time td(off) Fall time tf Turn-on energy Eon Turn-off energy Eoff Total switching energy Ets T j = 25° C, V C C = 4 00V, I C = 20A, V G E = 0/ 1 5V , R G = 1 6Ω L σ 1 ) = 60nH, C σ 1 ) = 40pF Energy losses include “tail” and diode reverse recovery. - 13 - 0.39 - 0.30 - 0.69 ns mJ Switching Characteristic, Inductive Load, at Tj=150 °C Parameter Symbol Conditions Value min. typ. - 15 - 8.5 - 65 max. Unit IGBT Characteristic Turn-on delay time td(on) Rise time tr Turn-off delay time td(off) Fall time tf Turn-on energy Eon Turn-off energy Eoff Total switching energy Ets Turn-on delay time td(on) Rise time tr Turn-off delay time td(off) Fall time tf Turn-on energy Eon Turn-off energy Eoff Total switching energy Ets 1) T j = 15 0° C V C C = 4 00V, I C = 20A, V G E = 0/ 1 5V , R G = 2. 2Ω L σ 1 ) = 60nH, C σ 1 ) = 40pF Energy losses include “tail” and diode reverse recovery. T j = 15 0° C V C C = 4 00V, I C = 20A, V G E = 0/ 1 5V , R G = 16Ω L σ 1 ) = 60nH, C σ 1 ) = 40pF Energy losses include “tail” and diode reverse recovery. - 35 - 0.46 - 0.24 - 0.7 - 17 - 13 - 222 - 13 - 0.6 - 0.36 - 0.96 ns mJ ns mJ Leakage inductance L σ and Stray capacity C σ due to test circuit in Figure E. Power Semiconductors 3 Rev 2.5 Nov 09 SGP20N60HS SGW20N60HS 100A 80A tP=4µs TC=80°C IC, COLLECTOR CURRENT IC, COLLECTOR CURRENT 70A 60A 50A TC=110°C 40A 30A Ic 20A 10A 50µs 200µs 1ms 1A Ic 10A 0A 10Hz 15µs 100Hz 1kHz DC 10kHz 0.1A 1V 100kHz f, SWITCHING FREQUENCY Figure 1. Collector current as a function of switching frequency (Tj ≤ 150°C, D = 0.5, VCE = 400V, VGE = 0/+15V, RG = 16Ω) 10V 100V 1000V VCE, COLLECTOR-EMITTER VOLTAGE Figure 2. Safe operating area (D = 0, TC = 25°C, Tj ≤150°C;VGE=15V) 180W 30A IC, COLLECTOR CURRENT Ptot, POWER DISSIPATION 160W 140W 120W 100W 80W 60W 20A 10A 40W 20W 0W 25°C 50°C 75°C 100°C 0A 25°C 125°C TC, CASE TEMPERATURE Figure 3. Power dissipation as a function of case temperature (Tj ≤ 150°C) Power Semiconductors 75°C 125°C TC, CASE TEMPERATURE Figure 4. Collector current as a function of case temperature (VGE ≤ 15V, Tj ≤ 150°C) 4 Rev 2.5 Nov 09 SGP20N60HS SGW20N60HS V G E =20V 50A V G E =20V 50A 15V IC, COLLECTOR CURRENT IC, COLLECTOR CURRENT 15V 13V 40A 11V 9V 30A 7V 5V 20A 10A 0V 2V 4V 9V 30A 7V 5V 20A 0A 6V T J = -5 5 °C 2 5 °C 1 5 0 °C 40A 20A 0V 2V 4V 6V 8V VGE, GATE-EMITTER VOLTAGE Figure 7. Typical transfer characteristic (VCE=10V) Power Semiconductors 0V 2V 4V 6V VCE, COLLECTOR-EMITTER VOLTAGE Figure 6. Typical output characteristic (Tj = 150°C) VCE(sat), COLLECTOR-EMITT SATURATION VOLTAGE VCE, COLLECTOR-EMITTER VOLTAGE Figure 5. Typical output characteristic (Tj = 25°C) IC, COLLECTOR CURRENT 11V 10A 0A 0A 13V 40A 5,5V 5,0V I C =40A 4,5V 4,0V 3,5V I C =20A 3,0V 2,5V I C =10A 2,0V 1,5V 1,0V -50°C 0°C 50°C 100°C 150°C TJ, JUNCTION TEMPERATURE Figure 8. Typical collector-emitter saturation voltage as a function of junction temperature (VGE = 15V) 5 Rev 2.5 Nov 09 SGP20N60HS SGW20N60HS t d (o ff) tf t, SWITCHING TIMES t, SWITCHING TIMES 100ns t d (o n ) 10ns tr 1ns 0A 10A 20A td(on) tr tf 100°C t d(on) tr 10Ω 20Ω 30Ω 40Ω 5,0V 4,5V max. 4,0V 3,5V typ. 3,0V 2,5V min. 2,0V 1,5V -50°C 150°C TJ, JUNCTION TEMPERATURE Figure 11. Typical switching times as a function of junction temperature (inductive load, VCE=400V, VGE=0/15V, IC=20A, RG=16Ω, Dynamic test circuit in Figure E) Power Semiconductors 10 ns RG, GATE RESISTOR Figure 10. Typical switching times as a function of gate resistor (inductive load, TJ=150°C, VCE=400V, VGE=0/15V, IC=20A, Dynamic test circuit in Figure E) VGE(th), GATE-EMITT TRSHOLD VOLTAGE t, SWITCHING TIMES 100ns 50°C tf 0Ω td(off) 0°C t d(off) 1 ns 30A IC, COLLECTOR CURRENT Figure 9. Typical switching times as a function of collector current (inductive load, TJ=150°C, VCE=400V, VGE=0/15V, RG=16Ω, Dynamic test circuit in Figure E) 10ns 100 ns 0°C 50°C 100°C 150°C TJ, JUNCTION TEMPERATURE Figure 12. Gate-emitter threshold voltage as a function of junction temperature (IC = 0.5mA) 6 Rev 2.5 Nov 09 SGP20N60HS SGW20N60HS *) E o n include losse s *) Eon include losses E ts * 2 ,0m J E on* 1 ,0m J E o ff 0 ,0m J 0A 10A 20 A 3 0A Eon* E off 20Ω 30Ω 40Ω D=0.5 0.2 -1 10 K/W 0.1 0.05 R,(K/W) 0.1882 0.3214 0.1512 0.0392 0.02 -2 10 K/W 0.01 τ, (s) 0.1137 -2 2.24*10 -4 7.86*10 -5 9.41*10 R1 R2 -3 10 K/W single pulse C 1 = τ 1 /R 1 C 2 = τ 2 /R 2 -4 10 K/W 1µs 150°C TJ, JUNCTION TEMPERATURE Figure 15. Typical switching energy losses as a function of junction temperature (inductive load, VCE=400V, VGE=0/15V, IC=20A, RG=16Ω, Dynamic test circuit in Figure E) Power Semiconductors 10Ω RG, GATE RESISTOR Figure 14. Typical switching energy losses as a function of gate resistor (inductive load, TJ=150°C, VCE=400V, VGE=0/15V, IC=20A, Dynamic test circuit in Figure E) ZthJC, TRANSIENT THERMAL RESISTANCE E, SWITCHING ENERGY LOSSES 0,50mJ 100°C 0Ω 0 Ets* 50°C E off 0,5 mJ 10 K/W 0,75mJ 0,00mJ 0°C E on * 0,0 mJ IC, COLLECTOR CURRENT Figure 13. Typical switching energy losses as a function of collector current (inductive load, TJ=150°C, VCE=400V, VGE=0/15V, RG=16Ω, Dynamic test circuit in Figure E) 0,25mJ 1,0 mJ 40A *) E on include losses due to diode recovery E ts * due to diode recovery E, SWITCHING ENERGY LOSSES E, SWITCHING ENERGY LOSSES due to diode recove ry 10µs 100µs 1ms 10ms 100ms tP, PULSE WIDTH Figure 16. IGBT transient thermal resistance (D = tp / T) 7 Rev 2.5 Nov 09 SGP20N60HS SGW20N60HS 15V 120V c, CAPACITANCE VGE, GATE-EMITTER VOLTAGE Ciss 1nF 480V 10V Crss 5V 0V 0nC 50nC 10pF 100nC 15µs 10µs tSC, 5µs 0µs 10V 11V 12V 13V 10V 20V 250A 200A 150A 100A 50A 0A 10V 14V VGE, GATE-EMITETR VOLTAGE Figure 19. Short circuit withstand time as a function of gate-emitter voltage (VCE=600V, start at TJ=25°C) Power Semiconductors 0V VCE, COLLECTOR-EMITTER VOLTAGE Figure 18. Typical capacitance as a function of collector-emitter voltage (VGE=0V, f = 1 MHz) IC(sc), short circuit COLLECTOR CURRENT QGE, GATE CHARGE Figure 17. Typical gate charge (IC=20 A) SHORT CIRCUIT WITHSTAND TIME Coss 100pF 12V 14V 16V 18V VGE, GATE-EMITETR VOLTAGE Figure 20. Typical short circuit collector current as a function of gateemitter voltage (VCE ≤ 600V, Tj ≤ 150°C) 8 Rev 2.5 Nov 09 SGP20N60HS SGW20N60HS PG-TO220-3-1 Power Semiconductors 9 Rev 2.5 Nov 09 SGP20N60HS SGW20N60HS Power Semiconductors 10 Rev 2.5 Nov 09 SGP20N60HS SGW20N60HS τ1 τ2 r1 r2 τn rn Tj (t) p(t) r1 r2 rn TC Figure D. Thermal equivalent circuit Figure A. Definition of switching times Figure B. Definition of switching losses Power Semiconductors Figure E. Dynamic test circuit Leakage inductance Lσ =60nH and Stray capacity C σ =40pF. 11 Rev 2.5 Nov 09 SGP20N60HS SGW20N60HS Published by Infineon Technologies AG 81726 Munich, Germany © 2008 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Power Semiconductors 12 Rev 2.5 Nov 09