SGW30N60HS Data Sheet (384 KB, EN)

SGP30N60HS
SGW30N60HS
High Speed IGBT in NPT-technology
C
• 30% lower Eoff compared to previous generation
• Short circuit withstand time – 10 µs
G
E
• Designed for operation above 30 kHz
• NPT-Technology for 600V applications offers:
- parallel switching capability
- moderate Eoff increase with temperature
- very tight parameter distribution
•
•
•
•
PG-TO-220-3-1
PG-TO-247-3
High ruggedness, temperature stable behaviour
Pb-free lead plating; RoHS compliant
Qualified according to JEDEC1 for target applications
Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/
Type
Tj
VCE
IC
Eoff)
SGP30N60HS
600V
30
480µJ
150°C G30N60HS
PG-TO-220-3-1
SGW30N60HS
600V
30
480µJ
150°C G30N60HS
PG-TO-247-3
Marking
Package
Maximum Ratings
Parameter
Symbol
Collector-emitter voltage
VCE
DC collector current
IC
Value
600
Unit
V
A
TC = 25°C
41
TC = 100°C
30
Pulsed collector current, tp limited by Tjmax
ICpuls
112
Turn off safe operating area
-
112
Avalanche energy single pulse
IC = 20A, VCC=50V, RGE=25Ω
start TJ=25°C
EAS
165
mJ
Gate-emitter voltage static
transient (tp<1µs, D<0.05)
VGE
±20
±30
V
Short circuit withstand time2)
tSC
10
µs
Ptot
250
W
Operating junction and storage temperature
Tj ,
Tstg
-55...+150
°C
Time limited operating junction temperature for t < 150h
Tj(tl)
175
Soldering temperature, 1.6mm (0.063 in.) from case for 10s
-
260
VCE ≤ 600V, Tj ≤ 150°C
VGE = 15V, VCC ≤ 600V, Tj ≤ 150°C
Power dissipation
TC = 25°C
1
2)
J-STD-020 and JESD-022
Allowed number of short circuits: <1000; time between short circuits: >1s.
Power Semiconductors
1
Rev. 2.4 Nov 09
SGP30N60HS
SGW30N60HS
Thermal Resistance
Parameter
Symbol
Conditions
Max. Value
Unit
0.5
K/W
Characteristic
IGBT thermal resistance,
RthJC
junction – case
Thermal resistance,
junction – ambient
RthJA
PG-TO-220-3-1
62
PG-TO-247-3-21
40
Electrical Characteristic, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Value
min.
Typ.
max.
600
-
-
T j = 25° C
2.8
3.15
T j = 15 0° C
3.5
4.00
4
5
Unit
Static Characteristic
Collector-emitter breakdown voltage
V ( B R ) C E S V G E = 0V, I C = 50 0µA
Collector-emitter saturation voltage
VCE(sat)
V
V G E = 15V, I C = 30A
Gate-emitter threshold voltage
VGE(th)
I C = 70 0µA, V C E =V G E
Zero gate voltage collector current
ICES
V C E = 600V ,V G E = 0V
3
µA
T j = 25° C
-
-
40
T j = 15 0° C
-
-
3000
Gate-emitter leakage current
IGES
V C E = 0V ,V G E = 2 0V
-
-
100
nA
Transconductance
gfs
V C E = 20V, I C = 30A
-
20
-
S
Input capacitance
Ciss
V C E = 25V,
-
1500
Output capacitance
Coss
V G E = 0V,
-
150
Reverse transfer capacitance
Crss
f= 1 M Hz
-
92
Gate charge
QGate
V C C = 4 80V, I C = 30A
-
141
nC
-
7
nH
Dynamic Characteristic
pF
V G E = 1 5V
Internal emitter inductance
LE
measured 5mm (0.197 in.) from case
Short circuit collector current
1)
1)
PG -TO -220-3-1
PG -TO -247-3-21
IC(SC)
V G E = 1 5V,t S C ≤10µs
V C C ≤ 600V,
T j ≤ 150° C
13
-
220
A
Allowed number of short circuits: <1000; time between short circuits: >1s.
Power Semiconductors
2
Rev. 2.4 Nov 09
SGP30N60HS
SGW30N60HS
Switching Characteristic, Inductive Load, at Tj=25 °C
Parameter
Symbol
Conditions
Value
min.
typ.
-
20
-
21
-
250
max.
Unit
IGBT Characteristic
Turn-on delay time
td(on)
Rise time
tr
Turn-off delay time
td(off)
Fall time
tf
Turn-on energy
Eon
Turn-off energy
Eoff
Total switching energy
Ets
T j = 25° C,
V C C = 4 00V, I C = 30A,
V G E = 0/ 1 5V ,
R G = 1 1Ω
L σ 1 ) = 60nH,
1)
C σ = 40 pF
Energy losses include
“tail” and diode
reverse recovery.
-
25
-
0.60
-
0.55
-
1.15
ns
mJ
Switching Characteristic, Inductive Load, at Tj=150 °C
Parameter
Symbol
Conditions
Value
min.
typ.
max.
Unit
IGBT Characteristic
Turn-on delay time
td(on)
Rise time
tr
Turn-off delay time
td(off)
Fall time
tf
Turn-on energy
Eon
Turn-off energy
Eoff
Total switching energy
Ets
Turn-on delay time
td(on)
Rise time
tr
Turn-off delay time
td(off)
Fall time
tf
Turn-on energy
Eon
Turn-off energy
Eoff
Total switching energy
Ets
1)
T j = 15 0° C
V C C = 4 00V, I C = 30A,
V G E = 0/ 1 5V ,
R G = 1. 8Ω
L σ 1 ) = 60nH,
C σ 1 ) = 40pF
Energy losses include
“tail” and diode
reverse recovery.
T j = 15 0° C
V C C = 4 00V, I C = 30A,
V G E = 0/ 1 5V ,
R G = 11Ω
L σ 1 ) = 60nH,
1)
C σ = 40pF
Energy losses include
“tail” and diode
reverse recovery.
-
16
-
13
-
122
-
29
-
0.78
-
0.48
-
1.26
-
20
-
19
-
274
-
27
-
0.91
-
0.70
-
1.61
ns
mJ
ns
mJ
Leakage inductance L σ and Stray capacity C σ due to test circuit in Figure E.
Power Semiconductors
3
Rev. 2.4 Nov 09
SGP30N60HS
SGW30N60HS
100A
tP=4µs
15µs
T C=80°C
IC, COLLECTOR CURRENT
IC, COLLECTOR CURRENT
100A
80A
T C=110°C
60A
40A
Ic
20A
0A
50µs
10A
200µs
1ms
1A
Ic
10Hz
100Hz
1kHz
DC
10kHz
0.1A
1V
100kHz
f, SWITCHING FREQUENCY
Figure 1. Collector current as a function of
switching frequency
(Tj ≤ 150°C, D = 0.5, VCE = 400V,
VGE = 0/+15V, RG = 11Ω)
10V
100V
1000V
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 2. Safe operating area
(D = 0, TC = 25°C, Tj ≤ 150°C;
VGE=15V)
Limited by Bond wire
40A
IC, COLLECTOR CURRENT
Ptot,
POWER DISSIPATION
200W
150W
100W
50W
0W
2 5 °C
5 0 °C
7 5 °C
1 0 0 °C
20A
10A
0A
25°C
1 2 5 °C
TC, CASE TEMPERATURE
Figure 3. Power dissipation as a function of
case temperature
(Tj ≤ 150°C)
Power Semiconductors
30A
75°C
125°C
TC, CASE TEMPERATURE
Figure 4. Collector current as a function of
case temperature
(VGE ≤ 15V, Tj ≤ 150°C)
4
Rev. 2.4 Nov 09
SGP30N60HS
SGW30N60HS
70A
60A
50A
V GE=20V
15V
13V
11V
9V
7V
5V
70A
40A
30A
50A
40A
30A
20A
10A
10A
2V
4V
0A
6V
T J = -5 5 °C
80A
2 5 °C
1 5 0 °C
60A
40A
20A
0A
0V
2V
4V
6V
8V
VGE, GATE-EMITTER VOLTAGE
Figure 7. Typical transfer characteristic
(VCE=10V)
Power Semiconductors
0V
2V
4V
6V
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 6. Typical output characteristic
(Tj = 150°C)
VCE(sat), COLLECTOR-EMITT SATURATION VOLTAGE
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 5. Typical output characteristic
(Tj = 25°C)
IC, COLLECTOR CURRENT
60A
20A
0A 0V
VGE=20V
15V
13V
11V
9V
7V
5V
80A
IC, COLLECTOR CURRENT
IC, COLLECTOR CURRENT
80A
5,5V
5,0V
I C =60A
4,5V
4,0V
3,5V
I C =30A
3,0V
2,5V
I C =15A
2,0V
1,5V
1,0V
-50°C
0°C
50°C
100°C
150°C
TJ, JUNCTION TEMPERATURE
Figure 8. Typical collector-emitter
saturation voltage as a function of
junction temperature
(VGE = 15V)
5
Rev. 2.4 Nov 09
SGP30N60HS
SGW30N60HS
t, SWITCHING TIMES
t, SWITCHING TIMES
td(off)
100ns
tf
100 ns
td(off)
tf
td(on)
td(on)
tr
10ns
0A
10A
20A
30A
40A
10 ns
50A
t, SWITCHING TIMES
td(off)
100ns
tf
tr
td(on)
10ns
0°C
50°C
100°C
5Ω
10Ω
15Ω
20Ω
25Ω
5,5V
5,0V
4,5V
4,0V
3,5V
max.
3,0V
2,5V
typ.
2,0V
1,5V
1,0V
-50°C
150°C
TJ, JUNCTION TEMPERATURE
Figure 11. Typical switching times as a
function of junction temperature
(inductive load, VCE=400V,
VGE=0/15V, IC=30A, RG=11Ω,
Dynamic test circuit in Figure E)
Power Semiconductors
0Ω
RG, GATE RESISTOR
Figure 10. Typical switching times as a
function of gate resistor
(inductive load, TJ=150°C,
VCE=400V, VGE=0/15V, IC=30A,
Dynamic test circuit in Figure E)
VGE(th), GATE-EMITT TRSHOLD VOLTAGE
IC, COLLECTOR CURRENT
Figure 9. Typical switching times as a
function of collector current
(inductive load, TJ=150°C,
VCE=400V, VGE=0/15V, RG=11Ω,
Dynamic test circuit in Figure E)
tr
min.
0°C
50°C
100°C
150°C
TJ, JUNCTION TEMPERATURE
Figure 12. Gate-emitter threshold voltage as
a function of junction temperature
(IC = 0.7mA)
6
Rev. 2.4 Nov 09
SGP30N60HS
SGW30N60HS
5,0mJ
*) Eon and Ets include losses
due to diode recovery
3,0 mJ
4,0mJ
3,0mJ
E on*
2,0mJ
Eoff
1,0mJ
E, SWITCHING ENERGY LOSSES
E, SWITCHING ENERGY LOSSES
*) E on and E ts include losses
due to diode recovery
2,5 mJ
2,0 mJ
1,5 mJ
Ets*
1,0 mJ
Eon*
0,5 mJ
Eoff
0,0mJ
0A
10A
20A
30A
40A
50A
0,0 mJ
60A
E, SWITCHING ENERGY LOSSES
*) Eon and Ets include losses
due to diode recovery
Ets*
1,5mJ
Eon*
1,0mJ
Eoff
0,5mJ
0Ω
5Ω
10Ω
15Ω
0,0mJ
50°C
100°C
-1
10 K/W
30Ω
0.2
0.1
0.05
-2
10 K/W
0.02
R,(K/W)
0.3681
0.0938
0.038
0.01
150°C
τ, (s)
0.0555
1.26E-03
1.49E-04
-3
10 K/W
R1
R2
single pulse
10 K/W
1µs
TJ, JUNCTION TEMPERATURE
Figure 15. Typical switching energy losses
as a function of junction
temperature
(inductive load, VCE=400V,
VGE=0/15V, IC=30A, RG=11Ω,
Dynamic test circuit in Figure E)
Power Semiconductors
25Ω
D=0.5
C 1 = τ 1 /R 1 C 2 = τ 2 /R 2
-4
0°C
20Ω
RG, GATE RESISTOR
Figure 14. Typical switching energy losses
as a function of gate resistor
(inductive load, TJ=150°C,
VCE=400V, VGE=0/15V, IC=30A,
Dynamic test circuit in Figure E)
ZthJC, TRANSIENT THERMAL RESISTANCE
IC, COLLECTOR CURRENT
Figure 13. Typical switching energy losses
as a function of collector current
(inductive load, TJ=150°C,
VCE=400V, VGE=0/15V, RG=11Ω,
Dynamic test circuit in Figure E)
10µs
100µs
1ms
10ms 100ms
tP, PULSE WIDTH
Figure 16. IGBT transient thermal resistance
(D = tp / T)
7
Rev. 2.4 Nov 09
15V
120V
480V
10V
Coss
Crss
100pF
5V
0V
0nC
50nC
100nC
10pF
150nC
15µs
10µs
tSC,
5µs
0µs
10V
11V
12V
13V
10V
20V
300A
250A
200A
150A
100A
50A
0A
10V
14V
VGE, GATE-EMITETR VOLTAGE
Figure 19. Short circuit withstand time as a
function of gate-emitter voltage
(VCE=600V, start at TJ=25°C)
Power Semiconductors
0V
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 18. Typical capacitance as a function
of collector-emitter voltage
(VGE=0V, f = 1 MHz)
IC(sc), short circuit COLLECTOR CURRENT
QGE, GATE CHARGE
Figure 17. Typical gate charge
(IC=30 A)
SHORT CIRCUIT WITHSTAND TIME
Ciss
1nF
c, CAPACITANCE
VGE, GATE-EMITTER VOLTAGE
SGP30N60HS
SGW30N60HS
12V
14V
16V
18V
VGE, GATE-EMITETR VOLTAGE
Figure 20. Typical short circuit collector
current as a function of gateemitter voltage
(VCE ≤ 600V, Tj ≤ 150°C)
8
Rev. 2.4 Nov 09
SGP30N60HS
SGW30N60HS
PG-TO220-3-1
Power Semiconductors
9
Rev. 2.4 Nov 09
SGP30N60HS
SGW30N60HS
Power Semiconductors
10
Rev. 2.4 Nov 09
SGP30N60HS
SGW30N60HS
τ1
τ2
r1
r2
τn
rn
Tj (t)
p(t)
r1
r2
rn
TC
Figure D. Thermal equivalent
circuit
Figure A. Definition of switching times
Figure B. Definition of switching losses
Power Semiconductors
Figure E. Dynamic test circuit
Leakage inductance Lσ =60nH
and Stray capacity C σ =40pF.
11
Rev. 2.4 Nov 09
SGP30N60HS
SGW30N60HS
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2008 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions or
characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or
any information regarding the application of the device, Infineon Technologies hereby disclaims any and all
warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual
property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please contact the nearest
Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances. For information on the
types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies
components may be used in life-support devices or systems only with the express written approval of
Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of
that life-support device or system or to affect the safety or effectiveness of that device or system. Life support
devices or systems are intended to be implanted in the human body or to support and/or maintain and
sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other
persons may be endangered.
Power Semiconductors
12
Rev. 2.4 Nov 09