SGP15N120

SGP15N120
SGW15N120
Fast IGBT in NPT-technology
C
• 40% lower Eoff compared to previous generation
• Short circuit withstand time – 10 µs
• Designed for:
- Motor controls
- Inverter
- SMPS
• NPT-Technology offers:
- very tight parameter distribution
- high ruggedness, temperature stable behaviour
- parallel switching capability
G
PG-TO-220-3-1
E
PG-TO-247-3
1
• Qualified according to JEDEC for target applications
• Pb-free lead plating; RoHS compliant
• Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/
VCE
IC
Eoff
Tj
Marking
SGP15N120
1200V
15A
1.5mJ
150°C
GP15N120
SGW15N120
1200V
15A
1.5mJ
150°C
Type
Package
PG-TO-220-3-1
SGW15N120 PG-TO-247-3
Maximum Ratings
Parameter
Symbol
Value
Unit
Collector-emitter voltage
VCE
1200
V
DC collector current
IC
A
TC = 25°C
30
TC = 100°C
15
Pulsed collector current, tp limited by Tjmax
ICpuls
52
Turn off safe operating area
-
52
Gate-emitter voltage
VGE
±20
V
Avalanche energy, single pulse
EAS
85
mJ
tSC
10
µs
Ptot
198
W
-55...+150
°C
VCE ≤ 1200V, Tj ≤ 150°C
IC = 15A, VCC = 50V, RGE = 25Ω, start at Tj = 25°C
Short circuit withstand time2
VGE = 15V, 100V≤ VCC ≤1200V, Tj ≤ 150°C
Power dissipation
TC = 25°C
Operating junction and storage temperature
Tj , Tstg
Soldering temperature, 1.6mm (0.063 in.) from case for 10s
-
1
2
260
J-STD-020 and JESD-022
Allowed number of short circuits: <1000; time between short circuits: >1s.
Power Semiconductors
1
Rev. 2.6
Nov. 09
SGP15N120
SGW15N120
Thermal Resistance
Parameter
Symbol
Conditions
Max. Value
Unit
0.63
K/W
Characteristic
IGBT thermal resistance,
RthJC
junction – case
Thermal resistance,
RthJA
junction – ambient
PG-TO-220-3-1
62
PG-TO-247-3
40
Electrical Characteristic, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Value
Unit
min.
typ.
max.
1200
-
-
2.5
3.1
3.6
T j = 15 0° C
-
3.7
4.3
3
4
5
T j = 25° C
-
-
200
T j = 15 0° C
-
-
800
-
-
100
nA
11
-
S
pF
Static Characteristic
Collector-emitter breakdown voltage
V ( B R ) C E S V G E = 0V,
I C = 10 00 µA
Collector-emitter saturation voltage
VCE(sat)
V
V G E = 15V, I C = 15A
T j = 25° C
Gate-emitter threshold voltage
VGE(th)
I C = 60 0µA, V C E =V G E
Zero gate voltage collector current
ICES
V C E =1200V,V G E =0V
µA
Gate-emitter leakage current
IGES
V C E =0V,V GE =20V
Transconductance
gfs
V C E = 20V, I C = 15A
Input capacitance
Ciss
V C E = 25V,
-
1250
1500
Output capacitance
Coss
V G E = 0V,
-
100
120
Reverse transfer capacitance
Crss
f= 1 M Hz
-
65
80
Gate charge
QGate
V C C = 9 60V, I C = 15A
-
130
175
nC
-
7
-
nH
-
A
Dynamic Characteristic
V G E = 1 5V
Internal emitter inductance
LE
measured 5mm (0.197 in.) from case
Short circuit collector current
2)
2)
PG -TO -220-3-1
PG -TO -247-3
IC(SC)
V G E = 1 5V,t S C ≤5µs
100V ≤ V C C ≤1200V,
T j ≤ 150° C
13
-
145
Allowed number of short circuits: <1000; time between short circuits: >1s.
Power Semiconductors
2
Rev. 2.6
Nov. 09
SGP15N120
SGW15N120
Switching Characteristic, Inductive Load, at Tj=25 °C
Parameter
Symbol
Conditions
Value
min.
typ.
max.
-
18
24
-
23
30
-
580
750
-
22
29
-
1.1
1.5
-
0.8
1.1
-
1.9
2.6
Unit
IGBT Characteristic
Turn-on delay time
td(on)
Rise time
tr
Turn-off delay time
td(off)
Fall time
tf
Turn-on energy
Eon
Turn-off energy
Eoff
Total switching energy
Ets
T j = 25° C,
V C C = 8 00V, I C = 15A,
V G E = 1 5V/ 0 V,
R G = 3 3Ω ,
L σ 1 ) = 180nH,
1)
C σ = 4 0 pF
Energy losses include
“tail” and diode
reverse recovery.
ns
mJ
Switching Characteristic, Inductive Load, at Tj=150 °C
Parameter
Symbol
Conditions
Value
min.
typ.
max.
-
38
46
-
30
36
-
652
780
-
31
37
-
1.9
2.3
-
1.5
2.0
-
3.4
4.3
Unit
IGBT Characteristic
Turn-on delay time
td(on)
Rise time
tr
Turn-off delay time
td(off)
Fall time
tf
Turn-on energy
Eon
Turn-off energy
Eoff
Total switching energy
Ets
1)
T j = 15 0° C
V C C = 8 00V,
I C = 15A,
V G E = 1 5V/ 0 V,
R G = 3 3Ω ,
L σ 1 ) = 180nH,
1)
C σ = 4 0 pF
Energy losses include
“tail” and diode
reverse recovery.
ns
mJ
Leakage inductance Lσ and stray capacity Cσ due to dynamic test circuit in figure E.
Power Semiconductors
3
Rev. 2.6
Nov. 09
SGP15N120
SGW15N120
70A
100A
Ic
tp=2µs
15µs
50A
40A
IC, COLLECTOR CURRENT
IC, COLLECTOR CURRENT
60A
TC=80°C
30A
TC=110°C
20A
10A
50µs
10A
200µs
1A
1ms
Ic
DC
0A
10Hz
100Hz
1kHz
10kHz
0.1A
100kHz
f, SWITCHING FREQUENCY
Figure 1. Collector current as a function of
switching frequency
(Tj ≤ 150°C, D = 0.5, VCE = 800V,
VGE = +15V/0V, RG = 33Ω)
1V
10V
100V
1000V
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 2. Safe operating area
(D = 0, TC = 25°C, Tj ≤ 150°C)
35A
200W
30A
IC, COLLECTOR CURRENT
Ptot,
POWER DISSIPATION
175W
150W
125W
100W
75W
50W
20A
15A
10A
5A
25W
0W
25°C
25A
50°C
75°C
100°C
0A
25°C
125°C
TC, CASE TEMPERATURE
Figure 3. Power dissipation as a function
of case temperature
(Tj ≤ 150°C)
Power Semiconductors
50°C
75°C
100°C
125°C
TC, CASE TEMPERATURE
Figure 4. Collector current as a function of
case temperature
(VGE ≤ 15V, Tj ≤ 150°C)
4
Rev. 2.6
Nov. 09
50A
50A
40A
40A
V G E =17V
IC, COLLECTOR CURRENT
IC, COLLECTOR CURRENT
SGP15N120
SGW15N120
15V
30A
13V
11V
9V
20A
7V
10A
0A
0V
1V
2V
3V
4V
5V
6V
30A
TJ=+150°C
TJ=+25°C
TJ=-40°C
10A
7V
9V
11V
VCE(sat), COLLECTOR-EMITTER SATURATION VOLTAGE
IC, COLLECTOR CURRENT
40A
5V
VGE, GATE-EMITTER VOLTAGE
Figure 7. Typical transfer characteristics
(VCE = 20V)
Power Semiconductors
13V
11V
9V
20A
7V
10A
1V
2V
3V
4V
5V
6V
7V
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 6. Typical output characteristics
(Tj = 150°C)
50A
0A
3V
15V
30A
0A
0V
7V
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 5. Typical output characteristics
(Tj = 25°C)
20A
V G E =17V
6V
5V
IC=30A
4V
IC=15A
3V
IC=7.5A
2V
1V
0V
-50°C
0°C
50°C
100°C
150°C
Tj, JUNCTION TEMPERATURE
Figure 8. Typical collector-emitter
saturation voltage as a function of junction
temperature
(VGE = 15V)
5
Rev. 2.6
Nov. 09
SGP15N120
SGW15N120
1000ns
1000ns
td(off)
t, SWITCHING TIMES
t, SWITCHING TIMES
td(off)
100ns
td(on)
tf
100ns
td(on)
tf
tr
tr
10ns
0Ω
10ns
0A
10A
20A
30A
40A
IC, COLLECTOR CURRENT
Figure 9. Typical switching times as a
function of collector current
(inductive load, Tj = 150°C,
VCE = 800V, VGE = +15V/0V, RG = 33Ω,
dynamic test circuit in Fig.E )
VGE(th), GATE-EMITTER THRESHOLD VOLTAGE
td(off)
t, SWITCHING TIMES
50Ω
6V
1000ns
100ns
td(on)
tr
tf
10ns
-50°C
25Ω
RG, GATE RESISTOR
Figure 10. Typical switching times as a
function of gate resistor
(inductive load, Tj = 150°C,
VCE = 800V, VGE = +15V/0V, IC = 15A,
dynamic test circuit in Fig.E )
0°C
50°C
100°C
max.
4V
typ.
3V
min.
2V
1V
0V
-50°C
150°C
Tj, JUNCTION TEMPERATURE
Figure 11. Typical switching times as a
function of junction temperature
(inductive load, VCE = 800V,
VGE = +15V/0V, IC = 15A, RG = 33Ω,
dynamic test circuit in Fig.E )
Power Semiconductors
5V
0°C
50°C
100°C
150°C
Tj, JUNCTION TEMPERATURE
Figure 12. Gate-emitter threshold voltage
as a function of junction temperature
(IC = 0.3mA)
6
Rev. 2.6
Nov. 09
SGP15N120
SGW15N120
14mJ
*) Eon and Ets include losses
due to diode recovery.
Ets*
E, SWITCHING ENERGY LOSSES
E, SWITCHING ENERGY LOSSES
12mJ
5mJ
*) Eon and Ets include losses
due to diode recovery.
10mJ
8mJ
Eon*
6mJ
4mJ
Eoff
2mJ
0mJ
0A
10A
20A
30A
40A
3mJ
Eon*
2mJ
Eoff
1mJ
0mJ
0Ω
50A
IC, COLLECTOR CURRENT
Figure 13. Typical switching energy losses
as a function of collector current
(inductive load, Tj = 150°C,
VCE = 800V, VGE = +15V/0V, RG = 33Ω,
dynamic test circuit in Fig.E )
Ets*
4mJ
25Ω
50Ω
75Ω
RG, GATE RESISTOR
Figure 14. Typical switching energy losses
as a function of gate resistor
(inductive load, Tj = 150°C,
VCE = 800V, VGE = +15V/0V, IC = 15A,
dynamic test circuit in Fig.E )
4mJ
3mJ
Eon*
2mJ
Eoff
1mJ
0mJ
-50°C
0°C
50°C
100°C
D=0.5
Ets*
ZthJC, TRANSIENT THERMAL IMPEDANCE
E, SWITCHING ENERGY LOSSES
*) Eon and Ets include losses
due to diode recovery.
150°C
10 K/W
0.1
0.05
R,(K/W)
0.09751
0.29508
0.13241
0.10485
0.02
-2
10 K/W 0.01
τ, (s)
0.67774
0.11191
0.00656
0.00069
R1
-3
10 K/W
1µs
single pulse
10µs
100µs
R2
C 1 = τ 1 /R 1 C 2 = τ 2 /R 2
1ms
10ms 100ms
1s
tp, PULSE WIDTH
Tj, JUNCTION TEMPERATURE
Figure 15. Typical switching energy losses
as a function of junction temperature
(inductive load, VCE = 800V,
VGE = +15V/0V, IC = 15A, RG = 33Ω,
dynamic test circuit in Fig.E )
Power Semiconductors
0.2
-1
Figure 16. IGBT transient thermal
impedance as a function of pulse width
(D = tp / T)
7
Rev. 2.6
Nov. 09
SGP15N120
SGW15N120
20V
Ciss
15V
C, CAPACITANCE
VGE, GATE-EMITTER VOLTAGE
1nF
UCE=960V
10V
5V
100pF
0V
0nC
Coss
Crss
50nC
100nC
150nC
0V
QGE, GATE CHARGE
Figure 17. Typical gate charge
(IC = 15A)
10V
20V
30V
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 18. Typical capacitance as a
function of collector-emitter voltage
(VGE = 0V, f = 1MHz)
IC(sc), SHORT CIRCUIT COLLECTOR CURRENT
tsc, SHORT CIRCUIT WITHSTAND TIME
30µs
20µs
10µs
0µs
10V
11V
12V
13V
14V
250A
200A
150A
100A
50A
0A
10V
15V
VGE, GATE-EMITTER VOLTAGE
Figure 19. Short circuit withstand time as a
function of gate-emitter voltage
(VCE = 1200V, start at Tj = 25°C)
Power Semiconductors
300A
12V
14V
16V
18V
20V
VGE, GATE-EMITTER VOLTAGE
Figure 20. Typical short circuit collector
current as a function of gate-emitter voltage
(100V≤VCE ≤1200V, TC = 25°C, Tj ≤ 150°C)
8
Rev. 2.6
Nov. 09
SGP15N120
SGW15N120
PG-TO220-3-1
Power Semiconductors
9
Rev. 2.6
Nov. 09
SGP15N120
SGW15N120
Power Semiconductors
10
Rev. 2.6
Nov. 09
SGP15N120
SGW15N120
i,v
tr r =tS +tF
diF /dt
Qr r =QS +QF
IF
tr r
tS
QS
Ir r m
tF
10% Ir r m
QF
dir r /dt
90% Ir r m
t
VR
Figure C. Definition of diodes
switching characteristics
τ1
τ2
r1
r2
τn
rn
Tj (t)
p(t)
r1
r2
rn
Figure A. Definition of switching times
TC
Figure D. Thermal equivalent
circuit
Figure B. Definition of switching losses
Power Semiconductors
Figure E. Dynamic test circuit
Leakage inductance Lσ =180nH,
and stray capacity Cσ =40pF.
11
Rev. 2.6
Nov. 09
SGP15N120
SGW15N120
Edition 2006-01
Published by
Infineon Technologies AG
81726 München, Germany
© Infineon Technologies AG 11/19/09.
All Rights Reserved.
Attention please!
The information given in this data sheet shall in no event be regarded as a guarantee of conditions or
characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical
values stated herein and/or any information regarding the application of the device, Infineon Technologies
hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of
non-infringement of intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices please contact your nearest
Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements components may contain dangerous substances. For information on the types
in question please contact your nearest Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or systems with the express
written approval of Infineon Technologies, if a failure of such components can reasonably be expected to
cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or
system. Life support devices or systems are intended to be implanted in the human body, or to support
and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health
of the user or other persons may be endangered.
Power Semiconductors
12
Rev. 2.6
Nov. 09