SGB02N60 Data Sheet (793 KB, EN)

SGB02N60
Fast IGBT in NPT-technology
C
• 75% lower Eoff compared to previous generation
combined with low conduction losses
• Short circuit withstand time – 10 µs
• Designed for:
- Motor controls
- Inverter
• NPT-Technology for 600V applications offers:
- very tight parameter distribution
- high ruggedness, temperature stable behaviour
- parallel switching capability
G
E
PG-TO-263-3-2 (D²-PAK)
(TO-263AB)
2
• Qualified according to JEDEC for target applications
• Pb-free lead plating; RoHS compliant
• Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/
Type
SGB02N60
VCE
IC
VCE(sat)150°C
Tj
Marking
Package
600V
2A
2.2V
150°C
G02N60
PG-TO-263-3-2
Maximum Ratings
Parameter
Symbol
Collector-emitter voltage
VCE
DC collector current
IC
Value
600
Unit
V
A
TC = 25°C
6.0
TC = 100°C
2.9
Pulsed collector current, tp limited by Tjmax
ICpul s
12
Turn off safe operating area
-
12
Gate-emitter voltage
VGE
±20
V
Avalanche energy, single pulse
EAS
13
mJ
tSC
10
µs
Ptot
30
W
-55...+150
°C
VCE ≤ 600V, Tj ≤ 150°C
IC = 2 A, VCC = 50 V, RGE = 25 Ω ,
start at Tj = 25°C
1)
Short circuit withstand time
VGE = 15V, VCC ≤ 600V, Tj ≤ 150°C
Power dissipation
TC = 25°C
Tj , Tstg
Operating junction and storage temperature
Soldering temperature (reflow soldering, MSL1)
2
1)
245
J-STD-020 and JESD-022
Allowed number of short circuits: <1000; time between short circuits: >1s.
1
Rev. 2.3
Nov 06
SGB02N60
Thermal Resistance
Parameter
Symbol
Conditions
Max. Value
Unit
RthJC
4.2
K/W
RthJA
40
Characteristic
IGBT thermal resistance,
junction – case
Thermal resistance,
junction – ambient
1)
Electrical Characteristic, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Value
min.
Typ.
max.
600
-
-
1.7
1.9
2.4
T j =1 5 0° C
-
2.2
2.7
3
4
5
Unit
Static Characteristic
Collector-emitter breakdown voltage
V ( B R ) C E S V G E = 0V , I C = 5 00 µA
Collector-emitter saturation voltage
VCE(sat)
V
V G E = 15 V , I C = 2 A
T j =2 5 °C
Gate-emitter threshold voltage
VGE(th)
I C = 15 0 µA , V C E = V G E
Zero gate voltage collector current
ICES
V C E = 60 0 V, V G E = 0 V
µA
T j =2 5 °C
-
-
20
T j =1 5 0° C
-
-
250
Gate-emitter leakage current
IGES
V C E = 0V , V G E =2 0 V
-
-
100
nA
Transconductance
gfs
V C E = 20 V , I C = 2 A
-
1.6
-
S
Input capacitance
Ciss
V C E = 25 V ,
-
142
170
pF
Output capacitance
Coss
V G E = 0V ,
-
18
22
Reverse transfer capacitance
Crss
f= 1 MH z
-
10
12
Gate charge
QGate
V C C = 48 0 V, I C =2 A
-
14
18
nC
-
7
-
nH
-
20
-
A
Dynamic Characteristic
V G E = 15 V
LE
Internal emitter inductance
measured 5mm (0.197 in.) from case
2)
Short circuit collector current
IC(SC)
V G E = 15 V ,t S C ≤ 10 µs
V C C ≤ 6 0 0 V,
T j ≤ 1 5 0° C
1)
2
Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm (one layer, 70µm thick) copper area for
collector connection. PCB is vertical without blown air.
2)
Allowed number of short circuits: <1000; time between short circuits: >1s.
2
Rev. 2.3
Nov 06
SGB02N60
Switching Characteristic, Inductive Load, at Tj=25 °C
Parameter
Symbol
Conditions
Value
min.
typ.
max.
-
20
24
-
13
16
-
259
311
-
52
62
-
0.036
0.041
-
0.028
0.036
-
0.064
0.078
Unit
IGBT Characteristic
Turn-on delay time
td(on)
Rise time
tr
Turn-off delay time
td(off)
Fall time
tf
Turn-on energy
Eon
Turn-off energy
Eoff
Total switching energy
Ets
T j =2 5 °C ,
V C C = 40 0 V, I C = 2 A,
V G E = 0/ 15 V ,
R G = 11 8Ω ,
1)
L σ = 18 0 nH ,
1)
C σ = 18 0 pF
Energy losses include
“tail” and diode
reverse recovery.
ns
mJ
Switching Characteristic, Inductive Load, at Tj=150 °C
Parameter
Symbol
Conditions
Value
min.
typ.
max.
-
20
24
-
14
17
-
287
344
-
67
80
-
0.054
0.062
-
0.043
0.056
-
0.097
0.118
Unit
IGBT Characteristic
Turn-on delay time
td(on)
Rise time
tr
Turn-off delay time
td(off)
Fall time
tf
Turn-on energy
Eon
Turn-off energy
Eoff
Total switching energy
Ets
1)
T j =1 5 0° C,
V C C = 40 0 V, I C =2 A ,
V G E = 0/ 15 V ,
R G = 11 8Ω ,
1)
L σ = 18 0 nH ,
1)
C σ = 18 0 pF
Energy losses include
“tail” and diode
reverse recovery.
ns
mJ
Leakage inductance L σ a nd Stray capacity C σ due to dynamic test circuit in Figure E.
3
Rev. 2.3
Nov 06
SGB02N60
16A
Ic
t p =2 µ s
10A
14A
IC, COLLECTOR CURRENT
IC, COLLECTOR CURRENT
12A
10A
T C =80°C
8A
6A
4A
2A
0A
10Hz
T C =110°C
15 µ s
1A
50 µ s
200 µ s
0.1A
1ms
DC
Ic
0.01A
100Hz
1kHz
10kHz
1V
100kHz
35W
7A
30W
6A
25W
5A
20W
15W
10W
5W
0W
25°C
100V
1000V
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 2. Safe operating area
(D = 0, TC = 25°C, Tj ≤ 150°C)
IC, COLLECTOR CURRENT
Ptot, POWER DISSIPATION
f, SWITCHING FREQUENCY
Figure 1. Collector current as a function of
switching frequency
(Tj ≤ 150°C, D = 0.5, VCE = 400V,
VGE = 0/+15V, RG = 118Ω)
10V
4A
3A
2A
1A
50°C
75°C
100°C
0A
25°C
125°C
TC, CASE TEMPERATURE
Figure 3. Power dissipation (IGBT) as a
function of case temperature
(Tj ≤ 150°C)
50°C
75°C
100°C
125°C
TC, CASE TEMPERATURE
Figure 4. Collector current as a function of
case temperature
(VGE ≤ 15V, Tj ≤ 150°C)
4
Rev. 2.3
Nov 06
7A
7A
6A
6A
5A
V G E =20V
IC, COLLECTOR CURRENT
IC, COLLECTOR CURRENT
SGB02N60
15V
4A
13V
11V
3A
9V
7V
2A
5V
1V
2V
3V
4V
13V
11V
3A
9V
2A
7V
5V
7A
Tj=+25°C
6A
-55°C
+150°C
5A
4A
3A
2A
1A
2V
4V
6V
8V
10V
1V
2V
3V
4V
5V
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 6. Typical output characteristics
(Tj = 150°C)
VCE(sat), COLLECTOR-EMITTER SATURATION VOLTAGE
8A
IC, COLLECTOR CURRENT
15V
4A
0A
0V
5V
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 5. Typical output characteristics
(Tj = 25°C)
0A
0V
V G E =20V
1A
1A
0A
0V
5A
VGE, GATE-EMITTER VOLTAGE
Figure 7. Typical transfer characteristics
(VCE = 10V)
4.0V
3.5V
IC = 4A
3.0V
2.5V
IC = 2A
2.0V
1.5V
1.0V
-50°C
0°C
50°C
100°C
150°C
Tj, JUNCTION TEMPERATURE
Figure 8. Typical collector-emitter
saturation voltage as a function of junction
temperature
(VGE = 15V)
5
Rev. 2.3
Nov 06
SGB02N60
t d(off)
tf
100ns
t, SWITCHING TIMES
t, SWITCHING TIMES
t d(off)
td(on)
tf
100ns
t d(on)
tr
10ns
0A
1A
2A
3A
4A
tr
10ns
0Ω
5A
IC, COLLECTOR CURRENT
Figure 9. Typical switching times as a
function of collector current
(inductive load, Tj = 150°C, VCE = 400V,
VGE = 0/+15V, RG = 11 8Ω,
Dynamic test circuit in Figure E)
300 Ω
400 Ω
RG, GATE RESISTOR
Figure 10. Typical switching times as a
function of gate resistor
(inductive load, Tj = 150°C, VCE = 400V,
VGE = 0/+15V, IC = 2A,
Dynamic test circuit in Figure E)
VGE(th), GATE-EMITTER THRESHOLD VOLTAGE
t, SWITCHING TIMES
200 Ω
5.5V
t d(off)
100ns
tf
t d(on)
tr
10ns
0°C
100 Ω
50°C
100°C
5.0V
4.5V
4.0V
max.
3.5V
3.0V
typ.
2.5V
min.
2.0V
150°C
-50°C
Tj, JUNCTION TEMPERATURE
Figure 11. Typical switching times as a
function of junction temperature
(inductive load, VCE = 400V, VGE = 0/+15V,
IC = 2A, RG = 1 1 8Ω,
Dynamic test circuit in Figure E)
0°C
50°C
100°C
150°C
Tj, JUNCTION TEMPERATURE
Figure 12. Gate-emitter threshold voltage
as a function of junction temperature
(IC = 0.15mA)
6
Rev. 2.3
Nov 06
SGB02N60
0.2mJ
*) Eon and Ets include losses
due to diode recovery.
0.2mJ
E, SWITCHING ENERGY LOSSES
E, SWITCHING ENERGY LOSSES
*) Eon and Ets include losses
due to diode recovery.
E ts *
E on *
0.1mJ
E off
E ts *
0.1mJ
E on *
E off
0.0mJ
0A
1A
2A
3A
4A
0.0mJ
0Ω
5A
IC, COLLECTOR CURRENT
Figure 13. Typical switching energy losses
as a function of collector current
(inductive load, Tj = 150°C, VCE = 400V,
VGE = 0/+15V, RG = 11 8Ω,
Dynamic test circuit in Figure E)
100 Ω
200 Ω
300 Ω
400 Ω
RG, GATE RESISTOR
Figure 14. Typical switching energy losses
as a function of gate resistor
(inductive load, Tj = 150°C, VCE = 400V,
VGE = 0/+15V, IC = 2A,
Dynamic test circuit in Figure E)
0.2mJ
D=0.5
E ts *
E on *
0.1mJ
E off
0.0mJ
0°C
50°C
100°C
ZthJC, TRANSIENT THERMAL IMPEDANCE
E, SWITCHING ENERGY LOSSES
*) Eon and Ets include losses
due to diode recovery.
150°C
0
10 K/W
0.2
0.1
0.05
0.02
R,(K/W)
1.026
1.3
1.69
0.183
-1
10 K/W
0.01
τ, (s)
0.035
3.62*10-3
4.02*10-4
4.21*10-5
R1
R2
-2
10 K/W
1µs
single pulse
10µs 100µs
C 1 = τ 1 / R 1 C 2 = τ 2 /R 2
1m s
10m s 100m s
1s
tp, PULSE WIDTH
Tj, JUNCTION TEMPERATURE
Figure 15. Typical switching energy losses
as a function of junction temperature
(inductive load, VCE = 400V, VGE = 0/+15V,
IC = 2A, RG = 1 1 8Ω,
Dynamic test circuit in Figure E)
Figure 16. IGBT transient thermal
impedance as a function of pulse width
(D = tp / T)
7
Rev. 2.3
Nov 06
SGB02N60
25V
C iss
15V
120V
C, CAPACITANCE
VGE, GATE-EMITTER VOLTAGE
20V
480V
10V
100pF
C oss
5V
10pF
C rss
0V
0nC
5nC
10nC
15nC
0V
QGE, GATE CHARGE
Figure 17. Typical gate charge
(IC = 2A)
30V
40A
IC(sc), SHORT CIRCUIT COLLECTOR CURRENT
tsc, SHORT CIRCUIT WITHSTAND TIME
20V
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 18. Typical capacitance as a
function of collector-emitter voltage
(VGE = 0V, f = 1MHz)
25 µ s
20 µ s
15 µ s
10 µ s
5µ s
0µ s
10V
10V
11V
12V
13V
14V
30A
20A
10A
0A
10V
15V
VGE, GATE-EMITTER VOLTAGE
Figure 19. Short circuit withstand time as a
function of gate-emitter voltage
(VCE = 600V, start at Tj = 25°C)
12V
14V
16V
18V
20V
VGE, GATE-EMITTER VOLTAGE
Figure 20. Typical short circuit collector
current as a function of gate-emitter voltage
(VCE ≤ 600V,Tj = 150°C)
8
Rev. 2.3
Nov 06
SGB02N60
PG-TO263-3-2
9
Rev. 2.3
Nov 06
SGB02N60
τ1
τ2
r1
r2
τn
rn
Tj (t)
p(t)
r1
r2
rn
TC
Figure D. Thermal equivalent
circuit
Figure A. Definition of switching times
Figure B. Definition of switching losses
Figure E. Dynamic test circuit
Leakage inductance Lσ =180nH
an d Stray capacity C σ =180pF.
10
Rev. 2.3
Nov 06
SGB02N60
Edition 2006-01
Published by
Infineon Technologies AG
81726 München, Germany
© Infineon Technologies AG 11/30/06.
All Rights Reserved.
Attention please!
The information given in this data sheet shall in no event be regarded as a guarantee of conditions or
characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical
values stated herein and/or any information regarding the application of the device, Infineon Technologies
hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of
non-infringement of intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices please contact your nearest
Infineon Technologies Office (www.infineon.com).
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Due to technical requirements components may contain dangerous substances. For information on the types
in question please contact your nearest Infineon Technologies Office.
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of the user or other persons may be endangered.
11
Rev. 2.3
Nov 06