INFINEON SKB04N60

SKB04N60
Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode
C
• 75% lower Eoff compared to previous generation
combined with low conduction losses
• Short circuit withstand time – 10 µs
• Designed for frequency inverters for washing machines,
fans, pumps and vacuum cleaners
• NPT-Technology for 600V applications offers:
- very tight parameter distribution
- high ruggedness, temperature stable behaviour
- parallel switching capability
• Very soft, fast recovery anti-parallel EmCon diode
1
• Qualified according to JEDEC for target applications
• Pb-free lead plating; RoHS compliant
• Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/
Type
SKB04N60
VCE
IC
VCE(sat)
Tj
600V
4A
2.3V
150°C
G
E
PG-TO-263-3-2
Marking Package
K04N60 PG-TO-263-3-2
Maximum Ratings
Parameter
Symbol
Value
Unit
Collector-emitter voltage
VCE
600
V
DC collector current
IC
A
TC = 25°C
9.4
TC = 100°C
4.9
Pulsed collector current, tp limited by Tjmax
ICpul s
19
Turn off safe operating area VCE ≤ 600V, Tj ≤ 150°C
-
19
Diode forward current
IF
TC = 25°C
10
TC = 100°C
4
Diode pulsed current, tp limited by Tjmax
IFpul s
19
Gate-emitter voltage
VGE
±20
V
tSC
10
µs
2
Short circuit withstand time
VGE = 15V, VCC ≤ 600V, Tj ≤ 150°C
Ptot
Power dissipation
TC = 25°C
Operating junction and storage temperature
Tj , Tstg
Soldering temperature (reflow soldering, MSL1)
Ts
1
2
W
50
-55...+150
°C
245
°C
J-STD-020 and JESD-022
Allowed number of short circuits: <1000; time between short circuits: >1s.
1
Rev. 2.3
Oct. 07
SKB04N60
Thermal Resistance
Parameter
Symbol
Conditions
Max. Value
Unit
Characteristic
IGBT thermal resistance,
RthJC
2.5
RthJCD
4.5
RthJA
40
K/W
junction – case
Diode thermal resistance,
junction – case
1)
SMD version, device on PCB
Electrical Characteristic, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Value
Unit
min.
Typ.
max.
600
-
-
1.7
2.0
2.4
-
2.3
2.8
1.2
1.4
1.8
T j =1 5 0° C
-
1.25
1.65
3
4
5
T j =2 5 °C
-
-
20
T j =1 5 0° C
-
-
500
-
-
100
nA
3.1
-
S
pF
Static Characteristic
Collector-emitter breakdown voltage
V ( B R ) C E S V G E = 0V , I C = 5 00 µA
Collector-emitter saturation voltage
VCE(sat)
V G E = 15 V , I C = 4 A
T j =2 5 °C
T j =1 5 0° C
VF
Diode forward voltage
V
V G E = 0V , I F = 4 A
T j =2 5 °C
Gate-emitter threshold voltage
VGE(th)
I C = 20 0 µA , V C E = V G E
Zero gate voltage collector current
ICES
V C E = 60 0 V, V G E = 0 V
Gate-emitter leakage current
IGES
V C E = 0V , V G E =2 0 V
Transconductance
gfs
V C E = 20 V , I C = 4 A
µA
Dynamic Characteristic
Ciss
V C E = 25 V ,
-
264
317
Coss
V G E = 0V ,
-
29
35
Reverse transfer capacitance
Crss
f= 1 MH z
-
17
20
Gate charge
QGate
V C C = 48 0 V, I C =4 A
-
24
31
nC
-
7
-
nH
-
40
-
A
Input capacitance
Output capacitance
V G E = 15 V
LE
Internal emitter inductance
measured 5mm (0.197 in.) from case
2)
Short circuit collector current
IC(SC)
V G E = 15 V ,t S C ≤ 10 µs
V C C ≤ 6 0 0 V,
T j ≤ 1 5 0° C
1)
2
Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm (one layer, 70µm thick) copper area for
collector connection. PCB is vertical without blown air.
2)
Allowed number of short circuits: <1000; time between short circuits: >1s.
2
Rev. 2.3
Oct. 07
SKB04N60
Switching Characteristic, Inductive Load, at Tj=25 °C
Parameter
Symbol
Conditions
Value
min.
typ.
max.
-
22
26
-
15
18
-
237
284
-
70
84
-
0.070
0.081
-
0.061
0.079
-
0.131
0.160
Unit
IGBT Characteristic
Turn-on delay time
td(on)
Rise time
tr
Turn-off delay time
td(off)
Fall time
tf
Turn-on energy
Eon
Turn-off energy
Eoff
Total switching energy
Ets
T j =2 5 °C ,
V C C = 40 0 V, I C = 4 A,
V G E = 0/ 15 V ,
R G =67Ω ,
1)
L σ = 18 0 nH ,
1)
C σ = 18 0 pF
Energy losses include
“tail” and diode
reverse recovery.
trr
ns
mJ
Anti-Parallel Diode Characteristic
Diode reverse recovery time
T j =2 5 °C ,
-
180
-
tS
V R = 2 00 V , I F = 4 A,
-
15
-
tF
d i F / d t =2 0 0 A/ µs
-
165
-
ns
Diode reverse recovery charge
Qrr
-
130
-
nC
Diode peak reverse recovery current
Irrm
-
2.5
-
A
Diode peak rate of fall of reverse
recovery current during t b
d i r r /d t
-
180
-
A/µs
Switching Characteristic, Inductive Load, at Tj=150 °C
Parameter
Symbol
Conditions
Value
min.
typ.
max.
-
22
26
-
16
19
-
264
317
-
104
125
-
0.115
0.132
-
0.111
0.144
-
0.226
0.277
Unit
IGBT Characteristic
Turn-on delay time
td(on)
Rise time
tr
Turn-off delay time
td(off)
Fall time
tf
Turn-on energy
Eon
Turn-off energy
Eoff
Total switching energy
Ets
T j =1 5 0° C
V C C = 40 0 V, I C = 4 A,
V G E = 0/ 15 V ,
R G = 67 Ω,
1)
L σ = 18 0 nH ,
1)
C σ = 18 0 pF
Energy losses include
“tail” and diode
reverse recovery.
trr
T j =1 5 0° C
-
230
-
tS
V R = 2 00 V , I F = 4 A,
-
23
-
tF
d i F / d t =2 0 0 A/ µs
-
227
-
ns
mJ
Anti-Parallel Diode Characteristic
Diode reverse recovery time
ns
Diode reverse recovery charge
Qrr
-
300
-
nC
Diode peak reverse recovery current
Irrm
-
4
-
A
Diode peak rate of fall of reverse
recovery current during t b
d i r r /d t
-
200
-
A/µs
1)
Leakage inductance L σ a nd Stray capacity C σ due to dynamic test circuit in Figure E.
3
Rev. 2.3
Oct. 07
SKB04N60
t p =2 µ s
Ic
0A
15 µ s
IC, COLLECTOR CURRENT
IC, COLLECTOR CURRENT
20A
T C =80°C
10A
T C =110°C
Ic
0A
10Hz
50 µ s
1A
200 µ s
1ms
.1A
DC
01A
1V
100Hz
1kHz
10kHz
100V
1000V
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 2. Safe operating area
(D = 0, TC = 25°C, Tj ≤ 150°C)
60W
12A
50W
10A
IC, COLLECTOR CURRENT
Ptot, POWER DISSIPATION
f, SWITCHING FREQUENCY
Figure 1. Collector current as a function of
switching frequency
(Tj ≤ 150°C, D = 0.5, VCE = 400V,
VGE = 0/+15V, RG = 67Ω)
40W
30W
20W
10W
0W
25°C
10V
100kHz
8A
6A
4A
2A
50°C
75°C
100°C
0A
25°C
125°C
TC, CASE TEMPERATURE
Figure 3. Power dissipation as a function
of case temperature
(Tj ≤ 150°C)
50°C
75°C
100°C
125°C
TC, CASE TEMPERATURE
Figure 4. Collector current as a function of
case temperature
(VGE ≤ 15V, Tj ≤ 150°C)
4
Rev. 2.3
Oct. 07
15A
15A
12A
12A
IC, COLLECTOR CURRENT
IC, COLLECTOR CURRENT
SKB04N60
VGE=20V
9A
15V
13V
11V
9V
7V
5V
6A
3A
0A
0V
1V
2V
3V
4V
Tj=+25°C
IC, COLLECTOR CURRENT
-55°C
+150°C
10A
8A
6A
4A
2A
0A
0V
2V
4V
6V
8V
10V
6A
15V
13V
11V
9V
7V
5V
3A
1V
2V
3V
4V
5V
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 6. Typical output characteristics
(Tj = 150°C)
VCE(sat), COLLECTOR-EMITTER SATURATION VOLTAGE
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 5. Typical output characteristics
(Tj = 25°C)
12A
9A
0A
0V
5V
14A
VGE=20V
VGE, GATE-EMITTER VOLTAGE
Figure 7. Typical transfer characteristics
(VCE = 10V)
4.0V
3.5V
IC = 8A
3.0V
IC = 4A
2.5V
2.0V
1.5V
1.0V
-50°C
0°C
50°C
100°C
150°C
Tj, JUNCTION TEMPERATURE
Figure 8. Typical collector-emitter
saturation voltage as a function of junction
temperature
(VGE = 15V)
5
Rev. 2.3
Oct. 07
SKB04N60
td(off)
t, SWITCHING TIMES
t, SWITCHING TIMES
t d(off)
tf
100ns
t d(on)
100ns
tf
t d(on)
tr
10ns
0A
2A
4A
6A
8A
tr
10ns
0Ω
10A
IC, COLLECTOR CURRENT
Figure 9. Typical switching times as a
function of collector current
(inductive load, Tj = 150°C, VCE = 400V,
VGE = 0/+15V, RG = 67Ω,
Dynamic test circuit in Figure E)
50 Ω
100 Ω
150 Ω
200 Ω
RG, GATE RESISTOR
Figure 10. Typical switching times as a
function of gate resistor
(inductive load, Tj = 150°C, VCE = 400V,
VGE = 0/+15V, IC = 4A,
Dynamic test circuit in Figure E)
VGE(th), GATE-EMITTER THRESHOLD VOLTAGE
5.5V
t, SWITCHING TIMES
td(off)
100ns
tf
td(on)
tr
10ns
0°C
50°C
100°C
5.0V
4.5V
4.0V
max.
3.5V
typ.
3.0V
2.5V
min.
2.0V
150°C
-50°C
Tj, JUNCTION TEMPERATURE
Figure 11. Typical switching times as a
function of junction temperature
(inductive load, VCE = 400V, VGE = 0/+15V,
IC = 4A, RG = 67Ω,
Dynamic test circuit in Figure E)
0°C
50°C
100°C
150°C
Tj, JUNCTION TEMPERATURE
Figure 12. Gate-emitter threshold voltage
as a function of junction temperature
(IC = 0.2mA)
6
Rev. 2.3
Oct. 07
SKB04N60
0.6mJ
0.4mJ
*) Eon and Ets include losses
due to diode recovery.
*) Eon and Ets include losses
due to diode recovery.
E, SWITCHING ENERGY LOSSES
E, SWITCHING ENERGY LOSSES
0.5mJ
E ts *
0.4mJ
0.3mJ
E on *
0.2mJ
E off
0.1mJ
0.0mJ
0A
2A
4A
6A
8A
0.3mJ
E ts *
0.2mJ
E off
0.1mJ
E on *
0.0mJ
0Ω
10A
IC, COLLECTOR CURRENT
Figure 13. Typical switching energy losses
as a function of collector current
(inductive load, Tj = 150°C, VCE = 400V,
VGE = 0/+15V, RG = 67Ω,
Dynamic test circuit in Figure E)
50 Ω
100 Ω
150 Ω
200 Ω
RG, GATE RESISTOR
Figure 14. Typical switching energy losses
as a function of gate resistor
(inductive load, Tj = 150°C, VCE = 400V,
VGE = 0/+15V, IC = 4A,
Dynamic test circuit in Figure E)
0.3mJ
E, SWITCHING ENERGY LOSSES
*) Eon and Ets include losses
due to diode recovery.
0.2mJ
E ts *
0.1mJ
E on *
E off
0.0mJ
0°C
50°C
100°C
150°C
Tj, JUNCTION TEMPERATURE
Figure 15. Typical switching energy losses
as a function of junction temperature
(inductive load, VCE = 400V, VGE = 0/+15V,
IC = 4A, RG = 67Ω,
Dynamic test circuit in Figure E)
7
Rev. 2.3
Oct. 07
SKB04N60
25V
C iss
15V
120V
C, CAPACITANCE
VGE, GATE-EMITTER VOLTAGE
20V
480V
10V
100pF
C oss
5V
C rss
10pF
0V
0nC
10nC
20nC
30nC
0V
QGE, GATE CHARGE
Figure 16. Typical gate charge
(IC = 4A)
30V
70A
IC(sc), SHORT CIRCUIT COLLECTOR CURRENT
tsc, SHORT CIRCUIT WITHSTAND TIME
20V
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 17. Typical capacitance as a
function of collector-emitter voltage
(VGE = 0V, f = 1MHz)
25 µ s
20 µ s
15 µ s
10 µ s
5µ s
0µ s
10V
10V
11V
12V
13V
14V
60A
50A
40A
30A
20A
10A
0A
10V
15V
VGE, GATE-EMITTER VOLTAGE
Figure 18. Short circuit withstand time as a
function of gate-emitter voltage
(VCE = 600V, start at Tj = 25°C)
12V
14V
16V
18V
20V
VGE, GATE-EMITTER VOLTAGE
Figure 19. Typical short circuit collector
current as a function of gate-emitter voltage
(VCE ≤ 600V, Tj = 150°C)
8
Rev. 2.3
Oct. 07
SKB04N60
500ns
560nC
trr, REVERSE RECOVERY TIME
IF = 8A
300ns
200ns
IF = 4A
IF = 2A
100ns
0ns
40A/µs
120A/µs
200A/µs
280A/µs
Qrr, REVERSE RECOVERY CHARGE
480nC
400ns
d i F / d t, DIODE CURRENT SLOPE
Figure 20. Typical reverse recovery time as
a function of diode current slope
(VR = 200V, Tj = 125°C,
Dynamic test circuit in Figure E)
IF = 8A
IF = 4A
IF = 2A
2A
120A/µs
200A/µs
280A/µs
OF REVERSE RECOVERY CURRENT
d i r r /d t, DIODE PEAK RATE OF FALL
Irr, REVERSE RECOVERY CURRENT
240nC
IF = 2A
160nC
80nC
120A/µs
200A/µs
280A/µs
360A/µs
400A/µs
6A
0A
40A/µs
IF = 4A
d i F / d t, DIODE CURRENT SLOPE
Figure 21. Typical reverse recovery charge
as a function of diode current slope
(VR = 200V, Tj = 125°C,
Dynamic test circuit in Figure E)
8A
4A
320nC
0nC
40A/µs
360A/µs
IF = 8A
400nC
320A/µs
240A/µs
160A/µs
80A/µs
0A/µs
40A/µs
360A/µs
d i F / d t, DIODE CURRENT SLOPE
Figure 22. Typical reverse recovery current
as a function of diode current slope
(VR = 200V, Tj = 125°C,
Dynamic test circuit in Figure E)
120A/µs
200A/µs
280A/µs
360A/µs
diF/dt, DIODE CURRENT SLOPE
Figure 23. Typical diode peak rate of fall of
reverse recovery current as a function of
diode current slope
(VR = 200V, Tj = 125°C,
Dynamic test circuit in Figure E)
9
Rev. 2.3
Oct. 07
SKB04N60
8A
2.0V
I F = 8A
4A
VF, FORWARD VOLTAGE
IF, FORWARD CURRENT
6A
150°C
100°C
25°C
2A
I F = 4A
1.5V
-55°C
0A
0.0V
0.5V
1.0V
1.5V
1.0V
2.0V
VF, FORWARD VOLTAGE
Figure 24. Typical diode forward current as
a function of forward voltage
-40°C
0°C
40°C
80°C
120°C
Tj, JUNCTION TEMPERATURE
Figure 25. Typical diode forward voltage as
a function of junction temperature
0
10 K/W
0
ZthJC, TRANSIENT THERMAL IMPEDANCE
ZthJCD, TRANSIENT THERMAL IMPEDANCE
D=0.5
D=0.5
0.2
0.1
0.05
R,(K/W)
0.128
0.387
0.346
1.360
2.280
0.02
-1
10 K/W
0.01
single pulse
R2
10µs
100µs
1ms
10ms 100ms
0.2
0.1
0.05
-1
10 K/W 0.02
0.01
-2
10 K/W
R,(K/W)
0.815
0.698
0.941
0.046
τ, (s)
0.0407
5.24*10-3
4.97*10-4
4.31*10-5
R1
single pulse
C 1 = τ 1 / R 1 C 2 = τ 2 /R 2
-2
10 K/W
1µs
R1
τ, (s)
0.085
7.30*10-3
4.69*10-3
7.34*10-4
5.96*10-5
10 K/W
R2
C 1 = τ 1 / R 1 C 2 = τ 2 /R 2
-3
10 K/W
1µs
1s
tp, PULSE WIDTH
Figure 26. Diode transient thermal
impedance as a function of pulse width
(D = tp / T)
10µs 100µs
1m s
10m s 100m s
1s
tp, PULSE WIDTH
Figure 28. IGBT transient thermal
impedance as a function of pulse width
(D = tp / T)
10
Rev. 2.3
Oct. 07
SKB04N60
PG-TO263-3-2
11
Rev. 2.3
Oct. 07
SKB04N60
i,v
tr r =tS +tF
diF /dt
Qr r =QS +QF
IF
tS
QS
Ir r m
tr r
tF
10% Ir r m
QF
dir r /dt
90% Ir r m
t
VR
Figure C. Definition of diodes
switching characteristics
τ1
τ2
r1
r2
τn
rn
Tj (t)
p(t)
r1
r2
rn
Figure A. Definition of switching times
TC
Figure D. Thermal equivalent
circuit
Figure E. Dynamic test circuit
Leakage inductance Lσ =180nH
an d Stray capacity C σ =180pF.
Figure B. Definition of switching losses
12
Rev. 2.3
Oct. 07
SKB04N60
Edition 2006-01
Published by
Infineon Technologies AG
81726 München, Germany
© Infineon Technologies AG 11/5/07.
All Rights Reserved.
Attention please!
The information given in this data sheet shall in no event be regarded as a guarantee of conditions or
characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical
values stated herein and/or any information regarding the application of the device, Infineon Technologies
hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of
non-infringement of intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices please contact your nearest
Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements components may contain dangerous substances. For information on the types
in question please contact your nearest Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or systems with the express
written approval of Infineon Technologies, if a failure of such components can reasonably be expected to
cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or
system. Life support devices or systems are intended to be implanted in the human body, or to support
and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health
of the user or other persons may be endangered.
13
Rev. 2.3
Oct. 07