MOSFET
MetalOxideSemiconductorFieldEffectTransistor
CoolMOS™E6600V
600VCoolMOS™E6PowerTransistor
IPx60R600E6
DataSheet
Rev.2.2
Final
PowerManagement&Multimarket
600V CoolMOS" E6 Power Transistor
1
IPD60R600E6, IPP60R600E6
IPA60R600E6
Description
CoolMOS" is a revolutionary technology for high voltage power
MOSFETs, designed according to the superjunction (SJ) principle
and pioneered by Infineon Technologies. CoolMOS" E6 series
combines the experience of the leading SJ MOSFET supplier with
high class innovation. The offered devices provide all benefits of a
fast switching SJ MOSFET while not sacrificing ease of use.
Extremely low switching and conduction losses make switching
applications even more efficient, more compact, lighter, and cooler.
Features
•
•
•
•
Extremely low losses due to very low FOM R dson*Qg and Eoss
Very high commutation ruggedness
Easy to use/drive
JEDEC1) qualified, Pb-free plating, halogen free (excluding
TO-252)
drain
pin 2
gate
pin 1
Applications
source
pin 3
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
Please note: For MOSFET paralleling the use of ferrite beads on the
gate or separate totem poles is generally recommended.
Table 1
Key Performance Parameters
Parameter
Value
Unit
VDS @ Tj,max
650
V
R DS(on),max
0.6
!
Qg,typ
20.5
nC
ID,pulse
19
A
Eoss @ 400V
1.9
µJ
Body diode d i/d t
500
A/µs
Type / Ordering Code
Package
IPD60R600E6
PG-TO252
IPP60R600E6
PG-TO220
IPA60R600E6
PG-TO220 FullPAK
Marking
Related Links
IFX CoolMOS Webpage
6R600E6
IFX Design tools
1) J-STD20 and JESD22
FinalData Sheet
2
Rev. 2.0,
2.2, 2010-04-12
2014-12-10
600V CoolMOS" E6 Power Transistor
IPx60R600E6
Table of Contents
Table of Contents
1
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
3
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
4
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
5
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
6
Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
7
Package outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
8
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
FinalData Sheet
3
Rev. 2.0,
2.2, 2010-04-12
2014-12-10
600V CoolMOS" E6 Power Transistor
IPx60R600E6
Maximum ratings
2
Maximum ratings
at Tj = 25 °C, unless otherwise specified.
Table 2
Maximum ratings
Parameter
Symbol
Continuous drain current
1)
ID
Values
Min.
Typ.
Max.
-
-
7.3
Unit
Note / Test Condition
A
TC= 25 °C
4.6
Pulsed drain current
2)
TC= 100°C
ID,pulse
-
-
19
A
TC=25 °C
Avalanche energy, single pulse
EAS
-
-
133
mJ
ID=1.3 A,VDD=50 V
(see table 21)
Avalanche energy, repetitive
EAR
-
-
0.2
Avalanche current, repetitive
IAR
-
-
1.3
A
MOSFET dv/dt ruggedness
dv/dt
-
-
50
V/ns
VDS =0...480 V
Gate source voltage
VGS
-20
-
20
V
static
-30
ID=1.3 A,VDD=50 V
30
AC (f>1 Hz)
Power dissipation for
TO-220, TO-252
Ptot
-
-
63
W
TC=25 °C
Power dissipation for
TO-220 FullPAK
Ptot
-
-
28
W
TC=25 °C
Operating and storage temperature
Tj,Tstg
-55
-
150
°C
-
-
60
Ncm
Mounting torque
TO-220
Mounting torque
TO-220 FullPAK
50
Continuous diode forward current
Diode pulse current
2)
Reverse diode dv/dt
3)
M3 and M3.5 screws
M2.5 screws
IS
-
-
6.3
A
TC=25 °C
IS,pulse
-
-
19
A
TC=25 °C
dv/dt
-
-
15
V/ns
VDS =0...400 V,ISD " I D,
Tj=25 °C
500
A/µs
(see table 22)
Maximum diode commutation
dif/dt
speed3)
1) Limited by Tj,max. Maximum duty cycle D=0.75
2) Pulse width tp limited by Tj,max
3) Identical low side and high side switch with identical RG
FinalData Sheet
4
Rev. 2.0,
2.2, 2010-04-12
2014-12-10
600V CoolMOS" E6 Power Transistor
IPx60R600E6
Thermal characteristics
3
Thermal characteristics
Table 3
Thermal characteristics TO-220 (IPP60R600E6)
Parameter
Symbol
Values
Unit
Min.
Typ.
Max.
Thermal resistance, junction - case RthJC
-
-
2.0
Thermal resistance, junction ambient
RthJA
-
-
62
Soldering temperature,
wavesoldering only allowed at
leads
Tsold
-
-
260
Table 4
°C/W
leaded
°C
1.6 mm (0.063 in.)
from case for 10 s
Unit
Note /
Test Condition
Thermal characteristics TO-220FullPAK (IPA60R600E6)
Parameter
Symbol
Values
Min.
Typ.
Max.
Thermal resistance, junction - case RthJC
-
-
4.5
Thermal resistance, junction ambient
RthJA
-
-
80
Soldering temperature,
wavesoldering only allowed at
leads
Tsold
-
-
260
Table 5
Note /
Test Condition
°C/W
leaded
°C
1.6 mm (0.063 in.)
from case for 10 s
Unit
Note /
Test Condition
Thermal characteristics TO-252 (IPD60R600E6)
Parameter
Symbol
Values
Min.
Typ.
Max.
Thermal resistance, junction - case RthJC
-
-
2.0
Thermal resistance, junction ambient
-
-
62
RthJA
°C/W
SMD version, device
on PCB, minimal
footprint
35
Soldering temperature,
wave- & reflow soldering allowed
Tsold
-
-
SMD version, device
on PCB, 6cm 2 cooling
area1)
260
°C
reflow MSL1
1) Device on 40mm*40mm*1.5mm one layer epoxy PCB FR4 with 6cm 2 copper area (thickness 70µm) for drain connection.
PCB is vertical without air stream cooling.
FinalData Sheet
5
Rev. 2.0,
2.2, 2010-04-12
2014-12-10
600V CoolMOS" E6 Power Transistor
IPx60R600E6
Electrical characteristics
4
Electrical characteristics
Electrical characteristics, at Tj=25 °C, unless otherwise specified.
Table 6
Static characteristics
Parameter
Symbol
Values
Unit
Note / Test Condition
V
VGS=0 V, ID=0.25 mA
Min.
Typ.
Max.
Drain-source breakdown voltage V(BR)DSS
600
-
-
Gate threshold voltage
VGS(th)
2.5
3
3.5
Zero gate voltage drain current
IDSS
-
-
1
-
10
-
-
-
100
nA
VGS=20 V, VDS =0 V
-
0.54
0.60
!
VGS=10 V, ID=2.4 A,
Tj=25 °C
-
1.40
-
-
10
-
Gate-source leakage current
IGSS
Drain-source on-state resistance RDS(on)
Gate resistance
Table 7
RG
VDS =VGS, ID=0.20mA
µA
VDS =600 V, VGS=0 V,
Tj=25 °C
VDS =600 V, VGS=0 V,
Tj=150 °C
VGS=10 V, ID=2.4A,
Tj=150 °C
f=1 MHz, open drain
!
Dynamic characteristics
Parameter
Symbol
Values
Min.
Typ.
Max.
Unit
Note /
Test Condition
pF
VGS=0 V, VDS=100 V,
f=1 MHz
Input capacitance
Ciss
-
440
-
Output capacitance
Coss
-
30
-
Effective output capacitance,
energy related1)
Co(er)
-
21
-
VGS=0 V,
VDS=0...480 V
Effective output capacitance, time
related2)
Co(tr)
-
88
-
ID=constant, VGS=0 V
VDS=0...480V
Turn-on delay time
td(on)
-
10
-
Rise time
tr
-
8
-
Turn-off delay time
td(off)
-
58
-
ns
VDD=400 V,
VGS=13 V, ID=3 A,
RG= 6.8 !
(see table 20)
Fall time
tf
11
1) Co(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% V (BR)DSS
2) Co(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% V(BR)DSS
FinalData Sheet
6
Rev. 2.0,
2.2, 2010-04-12
2014-12-10
600V CoolMOS" E6 Power Transistor
IPx60R600E6
Electrical characteristics
Table 8
Gate charge characteristics
Parameter
Symbol
Values
Min.
Typ.
Max.
Gate to source charge
Qgs
-
2.5
-
Gate to drain charge
Qgd
-
10.5
-
Gate charge total
Qg
-
20.5
-
Gate plateau voltage
Vplateau
-
5.4
-
Table 9
Unit
Note /
Test Condition
nC
VDD=480 V, ID=3.0A,
VGS=0 to 10 V
V
Reverse diode characteristics
Parameter
Symbol
Values
Min.
Typ.
Max.
Unit
Note /
Test Condition
Diode forward voltage
VSD
-
0.9
-
V
VGS=0 V, IF=3.0A,
Tj=25 °C
Reverse recovery time
trr
-
250
-
ns
Reverse recovery charge
Qrr
-
2.1
-
µC
VR=400 V, IF=3.0A,
diF/dt=100 A/µs
Peak reverse recovery current
Irrm
-
16
-
A
FinalData Sheet
7
(see table 22)
Rev. 2.0,
2.2, 2010-04-12
2014-12-10
600V CoolMOS" E6 Power Transistor
IPx60R600E6
Electrical characteristics diagrams
5
Electrical characteristics diagrams
Table 10
Power dissipation
TO-220, TO-252
Power dissipation
TO-220 FullPAK
Ptot = f(TC)
Ptot = f(TC)
Table 11
Max. transient thermal impedance
TO-220, TO-252
Max. transient thermal impedance
TO-220 FullPAK
Z(thJC)=f(tp); parameter: D=tp/T
FinalData Sheet
Z(thJC)=f(tp); parameter: D=t p/T
8
Rev. 2.0,
2.2, 2010-04-12
2014-12-10
600V CoolMOS" E6 Power Transistor
IPx60R600E6
Electrical characteristics diagrams
Table 12
Safe operating area TC=25 °C
TO-220, TO-252
Safe operating area TC=25 °C
TO-220 FullPAK
ID=f(VDS); TC=25 °C; D=0; parameter tp
ID=f(VDS ); TC=25 °C; D=0; parameter tp
Table 13
Safe operating area TC=80 °C
TO-220, TO-252
Safe operating area TC=80 °C
TO-220 FullPAK
ID=f(VDS); TC=80 °C; D=0; parameter tp
ID=f(VDS); TC=80 °C; D=0; parameter tp
FinalData Sheet
9
2.0, 2014-12-10
2010-04-12
Rev. 2.2,
600V CoolMOS" E6 Power Transistor
IPx60R600E6
Electrical characteristics diagrams
Table 14
Typ. output characteristics TC=25 °C
Typ. output characteristics Tj=125 °C
ID=f(VDS); Tj=25 °C; parameter: VGS
ID=f(VDS); Tj=125 °C; parameter: VGS
Table 15
Typ. drain-source on-state resistance
Drain-source on-state resistance
RDS(on)=f(ID); Tj=125 °C; parameter: VGS
RDS(on)=f(Tj); ID=2.4 A; VGS=10 V
FinalData Sheet
10
Rev. 2.0,
2.2, 2010-04-12
2014-12-10
600V CoolMOS" E6 Power Transistor
IPx60R600E6
Electrical characteristics diagrams
Table 16
Typ. transfer characteristics
Typ. gate charge
ID=f(VGS); VDS=20V
VGS=f(Qgate), ID=3.0A pulsed
Table 17
Avalanche energy
Drain-source breakdown voltage
EAS=f(Tj); ID=1.3 A; VDD=50 V
VBR(DSS)=f(Tj); ID=0.25 mA
FinalData Sheet
11
Rev. 2.0,
2.2, 2010-04-12
2014-12-10
600V CoolMOS" E6 Power Transistor
IPx60R600E6
Electrical characteristics diagrams
Table 18
Typ. capacitances
Typ. Coss stored energy
C=f(VDS); VGS=0 V; f=1 MHz
EOSS=f(VDS)
Table 19
Forward characteristics of reverse diode
IF=f(VSD); parameter: Tj
FinalData Sheet
12
Rev. 2.0,
2.2, 2010-04-12
2014-12-10
600V CoolMOS" E6 Power Transistor
IPx60R600E6
Test circuits
6
Test circuits
Table 20
Switching times test circuit and waveform for inductive load
Switching times test circuit for inductive load
Switching time waveform
VDS
90%
V DS
V GS
10%
VGS
td(on)
td(off)
tr
ton
Table 21
tf
toff
Unclamped inductive load test circuit and waveform
Unclamped inductive load test circuit
Unclamped inductive waveform
V(BR)DS
ID
VD
V DS
VDS
VDS
ID
Table 22
Test circuit and waveform for diode characteristics
Test circuit for diode characteristics
Diode recovery waveform
ID
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FinalData Sheet
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13
Rev. 2.0,
2.2, 2010-04-12
2014-12-10
600V CoolMOS" E6 Power Transistor
IPx60R600E6
Package outlines
7
Package outlines
Figure 1
Outlines TO-220, dimensions in mm/inches
FinalData Sheet
14
Rev. 2.0,
2.2, 2010-04-12
2014-12-10
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Final Data Sheet
+5
Rev. 2.2,
2.5, 2014-12-10
2014-12-09
600V CoolMOS" E6 Power Transistor
IPx60R600E6
Package outlines
Figure 3
Outlines TO-252, dimensions in mm/inches
FinalData Sheet
16
Rev. 2.0,
2.2, 2010-04-12
2014-12-10
600VCoolMOS™E6PowerTransistor
IPx60R600E6
RevisionHistory
IPx60R600E6
Revision:2015-02-11,Rev.2.2
Previous Revision
Revision
Date
Subjects (major changes since last revision)
2.0
2011-06-08
Release final data sheet
2.1
2011-09-14
-
2.2
2015-02-11
PG-TO220 FullPAK package outline update (creation:2014-12-10)
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respecttoanyexamplesorhintsgivenherein,anytypicalvaluesstatedhereinand/oranyinformationregardingtheapplication
ofthedevice,InfineonTechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithout
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Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesinquestion,
pleasecontactthenearestInfineonTechnologiesOffice.
TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/or
automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineonTechnologies,ifa
failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand
aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Lifesupportdevicesorsystemsare
intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.Iftheyfail,itis
reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered.
17
Rev.2.2,2015-02-11