IPA60R1K0CE
MOSFET
600VCoolMOS™CEPowerTransistor
TO-220FP
CoolMOS™isarevolutionarytechnologyforhighvoltagepower
MOSFETs,designedaccordingtothesuperjunction(SJ)principleand
pioneeredbyInfineonTechnologies.CoolMOS™CEisa
price-performanceoptimizedplatformenablingtotargetcostsensitive
applicationsinConsumerandLightingmarketsbystillmeetinghighest
efficiencystandards.Thenewseriesprovidesallbenefitsofafast
switchingSuperjunctionMOSFETwhilenotsacrificingeaseofuseand
offeringthebestcostdownperformanceratioavailableonthemarket.
Features
•ExtremelylowlossesduetoverylowFOMRdson*QgandEoss
•Veryhighcommutationruggedness
•Easytouse/drive
•Pb-freeplating,Halogenfreemoldcompound
•Qualifiedforstandardgradeapplications
Drain
Pin 2, Tab
Gate
Pin 1
Applications
Source
Pin 3
PFCstages,hardswitchingPWMstagesandresonantswitchingstages
fore.g.PCSilverbox,Adapter,LCD&PDPTVandindoorlighting.
Pleasenote:ForMOSFETparallelingtheuseofferritebeadsonthegate
orseparatetotempolesisgenerallyrecommended.
Table1KeyPerformanceParameters
Parameter
Value
Unit
VDS @ Tj,max
650
V
RDS(on),max
1000
mΩ
Id.
6.8
A
Qg.typ
13
nC
ID,pulse
12
A
Eoss@400V
1.3
µJ
Type/OrderingCode
Package
IPA60R1K0CE
PG-TO 220 FullPAK
Final Data Sheet
Marking
60S1K0CE
1
RelatedLinks
see Appendix A
Rev.2.0,2016-02-26
600VCoolMOS™CEPowerTransistor
IPA60R1K0CE
TableofContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Test Circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Appendix A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Final Data Sheet
2
Rev.2.0,2016-02-26
600VCoolMOS™CEPowerTransistor
IPA60R1K0CE
1Maximumratings
atTj=25°C,unlessotherwisespecified
Table2Maximumratings
Parameter
Symbol
Continuous drain current1)
Values
Unit
Note/TestCondition
6.8
4.3
A
TC=25°C
TC=100°C
-
12
A
TC=25°C
-
-
46
mJ
ID=0.8A; VDD=50V; see table 11
EAR
-
-
0.13
mJ
ID=0.8A; VDD=50V; see table 11
Avalanche current, repetitive
IAR
-
-
0.8
A
-
MOSFET dv/dt ruggedness
dv/dt
-
-
50
V/ns
VDS=0...480V
Gate source voltage (static)
VGS
-20
-
20
V
static;
Gate source voltage (dynamic)
VGS
-30
-
30
V
AC (f>1 Hz)
Power dissipation
TO-252
Ptot
-
-
61
W
TC=25°C
Power dissipation (FullPAK)
TO-220FP
Ptot
-
-
26
W
TC=25°C
Storage temperature
Tstg
-40
-
150
°C
-
Operating junction temperature
Tj
-40
-
150
°C
-
Continuous diode forward current
IS
-
-
4.8
A
TC=25°C
Diode pulse current
IS,pulse
-
-
12
A
TC=25°C
Reverse diode dv/dt3)
dv/dt
-
-
15
V/ns
VDS=0...400V,ISD<=IS,Tj=25°C
see table 9
Maximum diode commutation speed
dif/dt
-
-
500
A/µs
VDS=0...400V,ISD<=IS,Tj=25°C
see table 9
Mounting torque (FullPAK)
TO-220FP
-
-
-
50
Ncm M2.5 screws
Insulation withstand voltage for
TO-220FP
VISO
-
-
2500
V
Vrms,TC=25°C,t=1min
Unit
Note/TestCondition
Min.
Typ.
Max.
ID
-
-
Pulsed drain current2)
ID,pulse
-
Avalanche energy, single pulse
EAS
Avalanche energy, repetitive
2)
2Thermalcharacteristics
Table3Thermalcharacteristics(FullPAK)TO-220FP
Parameter
Symbol
Thermal resistance, junction - case
Values
Min.
Typ.
Max.
RthJC
-
-
4.9
°C/W -
Thermal resistance, junction - ambient RthJA
-
-
80
°C/W leaded
Soldering temperature, wavesoldering
only allowed at leads
-
-
260
°C
Tsold
1.6mm (0.063 in.) from case for 10s
1)
Limited by Tj max, TO252 equivalent, Maximum duty cycle D=0.5
Pulse width tp limited by Tj,max
3)
IdenticallowsideandhighsideswitchwithidenticalRG
2)
Final Data Sheet
3
Rev.2.0,2016-02-26
600VCoolMOS™CEPowerTransistor
IPA60R1K0CE
3Electricalcharacteristics
atTj=25°C,unlessotherwisespecified
Table4Staticcharacteristics
Parameter
Symbol
Drain-source breakdown voltage
Values
Unit
Note/TestCondition
-
V
VGS=0V,ID=0.25mA
3.0
3.5
V
VDS=VGS,ID=0.13mA
-
10
1
-
µA
VDS=600,VGS=0V,Tj=25°C
VDS=600,VGS=0V,Tj=150°C
IGSS
-
-
100
nA
VGS=20V,VDS=0V
Drain-source on-state resistance
RDS(on)
-
0.86
2.22
1.00
-
Ω
VGS=10V,ID=1.5A,Tj=25°C
VGS=10V,ID=1.5A,Tj=150°C
Gate resistance
RG
-
16
-
Ω
f=1MHz,opendrain
Unit
Note/TestCondition
Min.
Typ.
Max.
V(BR)DSS
600
-
Gate threshold voltage
V(GS)th
2.5
Zero gate voltage drain current
IDSS
Gate-source leakage current
Table5Dynamiccharacteristics
Parameter
Symbol
Input capacitance
Values
Min.
Typ.
Max.
Ciss
-
280
-
pF
VGS=0V,VDS=100V,f=1MHz
Output capacitance
Coss
-
21
-
pF
VGS=0V,VDS=100V,f=1MHz
Effective output capacitance,
energy related1)
Co(er)
-
14
-
pF
VGS=0V,VDS=0...480V
Effective output capacitance,
time related2)
Co(tr)
-
57
-
pF
ID=constant,VGS=0V,VDS=0...480V
Turn-on delay time
td(on)
-
10
-
ns
VDD=400V,VGS=10V,ID=1.9A,
RG=12.2Ω;seetable10
Rise time
tr
-
8
-
ns
VDD=400V,VGS=10V,ID=1.9A,
RG=12.2Ω;seetable10
Turn-off delay time
td(off)
-
60
-
ns
VDD=400V,VGS=10V,ID=1.9A,
RG=12.2Ω;seetable10
Fall time
tf
-
13
-
ns
VDD=400V,VGS=10V,ID=1.9A,
RG=12.2Ω;seetable10
Unit
Note/TestCondition
Table6Gatechargecharacteristics
Parameter
Symbol
Gate to source charge
Values
Min.
Typ.
Max.
Qgs
-
1.5
-
nC
VDD=480V,ID=1.9A,VGS=0to10V
Gate to drain charge
Qgd
-
6.5
-
nC
VDD=480V,ID=1.9A,VGS=0to10V
Gate charge total
Qg
-
13
-
nC
VDD=480V,ID=1.9A,VGS=0to10V
Gate plateau voltage
Vplateau
-
5.4
-
V
VDD=480V,ID=1.9A,VGS=0to10V
1)
Co(er)isafixedcapacitancethatgivesthesamestoredenergyasCosswhileVDSisrisingfrom0to80%Vo(BR)DSS
Co(tr)isafixedcapacitancethatgivesthesamestoredenergyasCosswhileVDSisrisingfrom0to80%Vo(BR)DSS
2)
Final Data Sheet
4
Rev.2.0,2016-02-26
600VCoolMOS™CEPowerTransistor
IPA60R1K0CE
Table7Reversediodecharacteristics
Parameter
Symbol
Diode forward voltage
Values
Unit
Note/TestCondition
-
V
VGS=0V,IF=1.9A,Tj=25°C
220
-
ns
VR=400V,IF=1.9A,diF/dt=100A/µs;
see table 9
-
1.5
-
µC
VR=400V,IF=1.9A,diF/dt=100A/µs;
see table 9
-
12
-
A
VR=400V,IF=1.9A,diF/dt=100A/µs;
see table 9
Min.
Typ.
Max.
VSD
-
0.9
Reverse recovery time
trr
-
Reverse recovery charge
Qrr
Peak reverse recovery current
Irrm
Final Data Sheet
5
Rev.2.0,2016-02-26
600VCoolMOS™CEPowerTransistor
IPA60R1K0CE
4Electricalcharacteristicsdiagrams
Diagram1:Powerdissipation(FullPAK)
Diagram2:Safeoperatingarea(FullPAK)
102
40
1 µs
101
10 µs
30
100 µs
1 ms
10 ms
ID[A]
Ptot[W]
100
20
DC
10-1
10
10-2
0
0
25
50
75
100
125
10-3
150
100
101
TC[°C]
102
103
VDS[V]
Ptot=f(TC)
ID=f(VDS);TC=25°C;D=0;parameter:tp
Diagram3:Safeoperatingarea(FullPAK)
Diagram4:Max.transientthermalimpedance(FullPAK)
2
101
10
0.5
101
1 µs
10 µs
0.2
100
100 µs
0.1
ID[A]
ZthJC[K/W]
1 ms
10 ms
100
DC
10-1
0.05
0.02
10-1
0.01
single pulse
10-2
10-3
100
101
102
103
10-2
10-5
10-4
VDS[V]
10-2
10-1
tp[s]
ID=f(VDS);TC=80°C;D=0;parameter:tp
Final Data Sheet
10-3
ZthJC=f(tP);parameter:D=tp/T
6
Rev.2.0,2016-02-26
600VCoolMOS™CEPowerTransistor
IPA60R1K0CE
Diagram5:Typ.outputcharacteristics
Diagram6:Typ.outputcharacteristics
12
8
20 V
11
10 V
20 V
7
10 V
10
8V
8V
9
6
7V
8
5
7V
ID[A]
ID[A]
7
6
4
6V
3
5.5 V
2
5V
5
4
6V
3
5.5 V
2
5V
1
0
4.5 V
1
4.5 V
0
5
10
15
0
20
0
5
10
VDS[V]
15
20
VDS[V]
ID=f(VDS);Tj=25°C;parameter:VGS
ID=f(VDS);Tj=125°C;parameter:VGS
Diagram7:Typ.drain-sourceon-stateresistance
Diagram8:Drain-sourceon-stateresistance
5.0
2.00
4.5
1.80
1.60
4.0
1.40
5.5V
5V
6.5 V
6V
7V
RDS(on)[Ω]
RDS(on)[Ω]
3.5
3.0
10 V
98%
1.20
Typ
1.00
2.5
0.80
2.0
0.60
1.5
1.0
0.40
0
1
2
3
4
5
6
7
8
9
0.20
-50
-25
0
25
ID[A]
RDS(on)=f(ID);Tj=125°C;parameter:VGS
Final Data Sheet
50
75
100
125
150
Tj[°C]
RDS(on)=f(Tj);ID=1.5A;VGS=10V
7
Rev.2.0,2016-02-26
600VCoolMOS™CEPowerTransistor
IPA60R1K0CE
Diagram9:Typ.transfercharacteristics
Diagram10:Typ.gatecharge
12
10
25 °C
9
10
8
120 V
480 V
7
8
VGS[V]
ID[A]
6
150 °C
6
5
4
4
3
2
2
1
0
0
2
4
6
8
10
0
12
0
3
VGS[V]
6
9
12
15
125
150
Qgate[nC]
ID=f(VGS);VDS=20V;parameter:Tj
VGS=f(Qgate);ID=1.9Apulsed;parameter:VDD
Diagram11:Forwardcharacteristicsofreversediode
Diagram12:Avalancheenergy
2
10
50
25 °C
125 °C
40
101
IF[A]
EAS[mJ]
30
20
0
10
10
10-1
0.0
0.5
1.0
1.5
2.0
0
25
50
VSD[V]
100
Tj[°C]
IF=f(VSD);parameter:Tj
Final Data Sheet
75
EAS=f(Tj);ID=0.8A;VDD=50V
8
Rev.2.0,2016-02-26
600VCoolMOS™CEPowerTransistor
IPA60R1K0CE
Diagram13:Drain-sourcebreakdownvoltage
Diagram14:Typ.capacitances
104
700
680
660
103
Ciss
620
C[pF]
VBR(DSS)[V]
640
600
102
Coss
580
101
560
540
Crss
520
-75
-50
-25
0
25
50
75
100
125
150
175
100
0
100
Tj[°C]
200
300
400
500
VDS[V]
VBR(DSS)=f(Tj);ID=0.25mA
C=f(VDS);VGS=0V;f=1MHz
Diagram15:Typ.Cossstoredenergy
2.0
Eoss[µJ]
1.5
1.0
0.5
0.0
0
100
200
300
400
500
VDS[V]
Eoss=f(VDS)
Final Data Sheet
9
Rev.2.0,2016-02-26
600VCoolMOS™CEPowerTransistor
IPA60R1K0CE
5TestCircuits
Table8Diodecharacteristics
Test circuit for diode characteristics
Diode recovery waveform
V ,I
Rg1
VDS( peak)
VDS
VDS
VDS
trr
IF
Rg 2
tF
tS
dIF / dt
IF
QF
IF
dIrr / dt trr =tF +tS
Qrr = QF + QS
Irrm
Rg1 = Rg 2
t
10 %Irrm
QS
Table9Switchingtimes
Switching times test circuit for inductive load
Switching times waveform
VDS
90%
VDS
VGS
VGS
10%
td(on)
ton
tr
td(off)
tf
toff
Table10Unclampedinductiveload
Unclamped inductive load test circuit
Unclamped inductive waveform
V(BR)DS
ID
VDS
VDS
Final Data Sheet
10
ID
VDS
Rev.2.0,2016-02-26
600VCoolMOS™CEPowerTransistor
IPA60R1K0CE
6PackageOutlines
),/
'
'#
'$
9
9#
9$
9%
9&
;
)
)#
*
=
=#
0
+
.
.#
@3
3
/,..,/*6*45
MIN
MAX
4.50
4.90
2.34
2.85
2.86
2.42
0.65
0.90
0.95
1.38
0.95
1.51
0.65
1.38
0.65
1.51
0.40
0.63
15.67
16.15
8.97
9.83
10.00
10.65
2.54 (BSC)
,0(+*5
MIN
0.177
0.092
0.095
0.026
0.037
0.037
0.026
0.026
0.016
0.617
0.353
0.394
)1(7/*06 01"
Z8B00003319
5('.*
0
2.5
0
2.5
5mm
*7412*'0 241-*(6,10
0.100 (BSC)
5.08
3
28.70
12.78
2.83
2.95
3.15
MAX
0.193
0.112
0.113
0.035
0.054
0.059
0.054
0.059
0.025
0.636
0.387
0.419
0.200
3
29.75
13.75
3.45
3.38
3.50
1.130
0.503
0.111
0.116
0.124
1.171
0.541
0.136
0.133
0.138
,557* )'6*
05-05-2014
4*8,5,10
04
Dimensions do not include mold flash, protrusions or gate burrs
Figure 1
Final Data Sheet
Outline PG-TO 220 FullPAK, dimensions in mm/inches
11
Rev.2.0,2016-02-26
600V CoolMOS™ CE Power Transistor
IPA60R1K0CE
7
Appendix A
Table 11
Related Links
• IFX CoolMOS TM CE Webpage: www.infineon.com
• IFX CoolMOS TM CE application note: www.infineon.com
• IFX CoolMOS TM CE simulation model:
www.infineon.com
• IFX Design tools: www.infineon.com
Final Data Sheet
12
Rev. 2.0, 2016-02-26
600V CoolMOS™ CE Power Transistor
IPA60R1K0CE
Revision History
IPA60R1K0CE
Revision: 2016-02-26, Rev. 2.0
Previous Revision
Revision
Date
Subjects (major changes since last revision)
2.0
2016-02-26
Release of final version
Trademarks of Infineon Technologies AG
AURIX™, C166™, CanPAK™, CIPOS™, CoolGaN™, CoolMOS™, CoolSET™, CoolSiC™, CORECONTROL™, CROSSAVE™, DAVE™, DI-POL™, DrBlade™,
EasyPIM™, EconoBRIDGE™, EconoDUAL™, EconoPACK™, EconoPIM™, EiceDRIVER™, eupec™, FCOS™, HITFET™, HybridPACK™, Infineon™,
ISOFACE™, IsoPACK™, i-Wafer™, MIPAQ™, ModSTACK™, my-d™, NovalithIC™, OmniTune™, OPTIGA™, OptiMOS™, ORIGA™, POWERCODE™,
PRIMARION™, PrimePACK™, PrimeSTACK™, PROFET™, PRO-SIL™, RASIC™, REAL3™, ReverSave™, SatRIC™, SIEGET™, SIPMOS™, SmartLEWIS™,
SOLID FLASH™, SPOC™, TEMPFET™, thinQ!™, TRENCHSTOP™, TriCore™.
Trademarks updated August 2015
Other Trademarks
All referenced product or service names and trademarks are the property of their respective owners.
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© 2016 Infineon Technologies AG
All Rights Reserved.
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please contact the nearest Infineon Technologies Office.
The Infineon Technologies component described in this Data Sheet may be used in life-support devices or systems and/or
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failure of such components can reasonably be expected to cause the failure of that life-support, automotive, aviation and
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intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is
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Final Data Sheet
13
Rev. 2.0, 2016-02-26