CoolMOS™ New Generation 600V & 650 V C6/E6 replacements for C3 CoolMOS™ 600V C6/E6 replacements for C3 TO-252 DPAK TO-263 D2PAK TO-220 TO-220 FullPAK TO-262 I2PAK TO-247 RDS(on) C3 Original C6/E6 Replacement 3.3 Ω SPD02N60C3 IPD60R3k3C6 1.4 Ω SPD03N60C3 IPD60R1k4C6 C3 Original C6 Replacement C3 Original SPP03N60C3 C6/E6 Replacement C3 Original C6 /E6 Replacement C3 Original C6 Replacement C3 Original C6/E6 Replacement IPP60R1k4C6 0.95 Ω SPD04N60C3 IPD60R950C6 SPB03N60C3 IPB60R950C6 SPP04N60C3 IPP60R950C6 SPA04N60C3 IPA60R950C6 0.60 Ω SPD07N60C3 IPD60R600E6 SPB07N60C3 IPB60R600C6 SPP07N60C3 IPP60R600E6 SPA07N60C3 IPA60R600E6 0.38 Ω SPD11N60C3 IPD60R380C6 SPB11N60C3 IPB60R380C6 SPP11N60C3 IPP60R380E6 SPA11N60C3 IPA60R380E6 SPI11N60C3 IPI60R380C6 0.28 Ω SPB15N60C3 IPB60R280C6 SPP15N60C3 IPP60R280E6 SPA15N60C3 IPA60R280E6 SPI15N60C3 IPI60R280C6 SPW15N60C3 IPW60R280E6 0.19 Ω SPB20N60C3 IPB60R190C6 SPP20N60C3 IPP60R190E6 SPA20N60C3 IPA60R190E6 SPI20N60C3 IPI60R190C6 SPW20N60C3 IPW60R190E6 0.16 Ω SPB24N60C3 IPB60R160C6 SPP24N60C3 IPP60R160C6 SPA24N60C3 IPA60R160C6 SPW24N60C3 IPW60R160C6 0.10 Ω SPW35N60C3 IPW60R099C6 0.07 Ω SPW47N60C3 IPW60R070C6 CoolMOS™ 650V C6/E6 replacements for C3 TO-220 TO-220 FullPAK TO-262 I2PAK TO-247 RDS(on) C3 Original E6 Replacement C3 Original E6 Replacement C3 Original C6 Replacement 0.60 Ω SPP07N65C3 IPP65R600E6 SPA07N65C3 IPA65R600E6 SPI07N65C3 IPI65R600C6 0.38 Ω SPP11N65C3 IPP65R380E6 SPA11N65C3 IPA65R380E6 SPI11N65C3 IPI65R380C6 0.28 Ω SPP15N65C3 IPP65R280E6 SPA15N65C3 IPA65R280E6 SPI15N65C3 IPI65R280C6 0.19 Ω SPP20N65C3 IPP65R190E6 SPA20N65C3 IPA65R190E6 SPI20N65C3 IPI65R190C6 0.07 Ω 1) C3 Original C6 Replacement SPW20N65C3 IPW65R190C6 SPW47N65C3 IPW65R070C6 1) Available Q4 2011 Order Number: B152-H9581-G1-X-7600-DB2011-0011 Date: 10/2011 All rights reserved. © 2011 Infineon Technologies AG C6/E6 technology What is the Difference between the CoolMOS™ C6 & E6 series? The C6 and E6 are exactly the same technology, but with a different integrated resistor value. Please see charts for details. 600V C6 Series 600V E6 Series 16 14 12 Rg int [Ω] The C6 series was first launched and optimized for ease of use, however for certain Discontinuous Conduction Mode (DCM) applications it was realized that increasing pressures on efficiency required an improvement. By carefully reducing the integrated gate resistor value will improve efficiency in these applications. 600V C6 & E6 integrated Gate Resistor 18 10 8 6 4 2 0 41 The E6 only covers a smaller range of parts as its specifically targeted for the above application, where there is no E6 range the C6 has already been fully optimized in terms of ease of use and efficiency. 70 99 125 160 190 280 380 450 520 600 750 950 1k4 2k0 RDS(on) [mΩ] 650V C6 & E6 integrated Gate Resistor 18 16 650V C6 Series 650V E6 Series 14 Rg int [Ω] 12 10 8 6 4 2 0 37 70 99 190 RDS(on) [mΩ] 280 380 600 3k3 What is the Difference between the CoolMOS™ C3 & C6/E6 series? CoolMOS™ C6/E6 series was designed as a direct replacement for the well established C3 series of CoolMOS™. The series are both designed as a general easy to use part, but improvements have also been made for the C6/E6 on the earlier C3 series. Drain Drain C6 / E6 C3 Rg int Gate Gate So what are the differences: Better light load efficiency due to: –– Lower Gate Charge value (Qg) (see table for example) –– Energy stored in the output capacitance, as this Source parameter, is decisive for the efficiency in high line or light load conditions Eoss (see table for example) Improved body diode control for use in hard commutation applications (i.e resonant topologies) Ease of driving the MOSFET by use of an Specification On-state resistance: maximum rating, 25 °C Total Gate charge Energy stored in output: capacitance @ 400V integrated gate resistor More attractive price points Body diode, reverse recovery charge Body diode, di/dt Ease of Use with integrated gate resistor: Symbol IPW60R190C6 SPW20N60C3 RDS(on) 190 mΩ 190 mΩ Qg 58 nC 87 nC improves low load efficiency EOSS 5 µJ 10 µJ Improves efficiency in hard switching applications Qrr 7 µC 11 µC dIf /dt 1400 A/µs 500 A/µs Disassembling a MOSFET package parasitics – TO-220 Helps self limiting di/dt and dv/dt behavior, - Improved body diode for soft switching applications Parasitic L C influence: Damping effect of Rg int Lead inductance y Reduces parasitic effects due to package and board layout. (see picture) dv/dt triggered oscillations Drain Resonant circuit External on-board coupling capacitance –– By adding in an integrated gate resistor this helps Cgd ext Cgd damp out resonant effects due to inherent package construction or board layout. This is more effective Benefits z beneficial in EMI and voltage overshoot. Source Gate: 16.1nH Gate than an external gate resistor due to its positioning Rg ext Lead + gate wire inductance Rg int Cds Cgs closer to the gate. Resonant circuit Source Drain: 13nH Source: 14.9nH x di/dt triggered oscillations C3 vs. E6 efficiency comparison in a CCM-PFC stage 190mΩ @ 130kHz Gate Charge and Integrated Gate Resistor Due to low gate charge plus integrated gate resistors the gate current is relatively low; hence the use of low cost gate drivers is therefore possible. IPP60R190E6 7.5R SPP20N60C3 7.5R 97 95 93 0 50 100 150 200 250 300 350 400 Pout [W] Significant light load 190mΩ Efficiency @ 230Vac and 7.5Ω Gate resistor @ 130kHz 97 efficiency improvement C6 / E6 96 94 In combination with a relatively low total gate charge the losses dissipated in the driver are considerably lower as well. We recommand to use very small external gate resistors to achieve optimum efficiency across a wide range of load conditions. Drain 190mΩ Efficiency @ 115Vac and 7.5Ω Gate resistor @ 130kHz 98 efficiency [%] CoolMOS™ C6 comes with an integrated gate resistor in order to achieve self-limiting di/dt and dv/dt characteristics. This integrated Rg allows fast turn on and turn off at normal operating current conditions but limits the di/dt and dv/dt in case of peak current conditions. This helps to improve performance in hard commutation applications (i.e. resonant topologies). with E6 can then also be IPP60R190E6 7.5R SPP20N60C3 7.5R 96 achieved compared to C3 Rg ext 95 due to the improved Qg Rg int and Eoss values; as seen in example device table. Source Carefully choosing Rg ext with Rg int will give best efficiency For further information please visit our website: www.infineon.com/c6e6 efficiency [%] Gate 94 93 92 91 90 0 50 100 150 200 Pout [W] 250 300 350 400