MOSFET MetalOxideSemiconductorFieldEffectTransistor CoolMOS™ThinkPAK8x8 650VCoolMOS™E6PowerTransistor IPL65R190E6 DataSheet Rev.2.0 Final Industrial&Multimarket 650VCoolMOS™E6PowerTransistor IPL65R190E6 1Description ThinPAK8x8 CoolMOS™isarevolutionarytechnologyforhighvoltagepower MOSFETs,designedaccordingtothesuperjunction(SJ)principleand pioneeredbyInfineonTechnologies.650VCoolMOS™E6series combinestheexperienceoftheleadingSJMOSFETsupplierwithhigh classinnovation. TheresultingdevicesprovideallbenefitsofafastswitchingSJMOSFET whileofferinganextremelyfastandrobustbodydiode.Thiscombination ofextremelylowswitching,commutationandconductionlossestogether withhighestrobustnessmakeespeciallyresonantswitchingapplications morereliable,moreefficient,lighterandcooler. ThinPAK ThinPAKisanewleadlessSMDpackageforHVMOSFETs.Thenew packagehasaverysmallfootprintofonly64mm²(vs.150mm²forthe D²PAK)andaverylowprofilewithonly1mmheight(vs.4.4mmforthe D²PAK).Thesignificantlysmallerpackagesize,combinedwithbenchmark lowparasiticinductances,providesdesignerswithanewandeffectiveway todecreasesystemsolutionsizeinpower-densitydrivendesigns. Drain Pin 5 Gate Pin 1 Driver Source Pin 2 Features Power Source Pin 3,4 •Reducedboardspaceconsumption •Increasedpowerdensity •Shortcommutationloop •Smoothswitchingwaveform •easytouseproducts •ExtremelylowlossesduetoverylowFOMRdson*QgandEoss •Pb-freeplating,Halogenfree •QualifiedforindustrialgradeapplicationsaccordingtoJEDEC(J-STD20 andJESD22) Applications PFCstages,hardswitchingPWMstagesandresonantswitchingstages fore.g.PCSilverbox,Adapter,LCDTV,Lighting,Server,Telecom. Table1KeyPerformanceParameters Parameter Value Unit VDS @ Tj max 700 V RDS(on),max 0.19 Ω Qg,typ 73 nC ID,pulse 66 A Eoss @ 400V 5.9 µJ Body diode di/dt 500 A/µs Type/OrderingCode Package Marking IPL65R190E6 PG-VSON-4 65E6190 Final Data Sheet 2 RelatedLinks see Appendix A Rev.2.0,2014-03-19 650VCoolMOS™E6PowerTransistor IPL65R190E6 TableofContents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Test Circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Appendix A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Final Data Sheet 3 Rev.2.0,2014-03-19 650VCoolMOS™E6PowerTransistor IPL65R190E6 2Maximumratings atTj=25°C,unlessotherwisespecified Table2Maximumratings Parameter Symbol Continuous drain current1) ID Values Min. Typ. Max. 20.2 Unit Note/TestCondition A TC=25°C TC=100°C 12.8 Pulsed drain current ID‚pulse 66 A TC=25°C Avalanche energy, single pulse EAS 485 mJ ID=3.5A,VDD=50V (see table 10) Avalanche energy, repetitive EAR 0.73 mJ ID=3.5A,VDD=50V Avalanche current, repetitive IAR 3.5 A MOSFET dv/dt ruggedness dv/dt 50 V/ns VDS=0...480V Gate source voltage VGS -20 20 V static -30 30 -40 150 °C 2) AC (f > 1 Hz) Operating and storage temperature Tj‚Tstg Continuous diode forward current IS 17.5 A TC=25°C Diode pulse current IS‚pulse 66 A TC=25°C Reverse diode dv/dt dv/dt 15 V/ns Maximum diode commutation speed dif/dt 500 Power dissipation Ptot 151 3) VDS=0...400V,ISD≤ID, Tj=25°C A/µs (see table 8) W TC=25°C 1) Limited by Tj max. Maximum duty cycle D=0,75 Pulse width tp limited by Tj max 3) Identical low side and high side switch with identical RG 2) Final Data Sheet 4 Rev.2.0,2014-03-19 650VCoolMOS™E6PowerTransistor IPL65R190E6 3Thermalcharacteristics Table3ThermalcharacteristicsThinPAK8x8 Parameter Symbol Thermal resistance, junction - case RthJC Values Min. Thermal resistance, junction - ambient1) RthJA Typ. Max. Unit 0.83 °C/W 62 °C/W Tsold 260 SMD version, device on PCB, minimal footprint SMD version, device on PCB, 6cm² cooling area 45 Soldering temperature, wave- & reflowsoldering allowed Note/TestCondition °C reflow MSL 3 1) Device on 40mm*40mm*1.5mm one layer epoxy PCB FR4 with 6cm² copper area (thickness 70µm) for drain connection. PCB is vertical without air stream cooling. Final Data Sheet 5 Rev.2.0,2014-03-19 650VCoolMOS™E6PowerTransistor IPL65R190E6 4Electricalcharacteristics atTj=25°C,unlessotherwisespecified Table4Staticcharacteristics Values Parameter Symbol Drain-source breakdown voltage V(BR)DSS 650 Gate threshold voltage VGS(th) 2.5 Zero gate voltage drain current IDSS Min. Typ. 3 Unit Note/TestCondition V VGS=0V,ID=1mA 3.5 V VDS=VGS,ID=0.7mA 1 µA VDS=650V,VGS=0V,Tj=25°C Max. VDS=650V,VGS=0V,Tj=150°C 10 Gate-source leakage current IGSS Drain-source on-state resistance RDS(on) 0.170 100 nA VGS=20V,VDS=0V 0.19 Ω VGS=10V,ID=7.3A,Tj=25°C VGS=10V,ID=7.3A,Tj=150°C 0.440 Gate resistance RG 1 Ω f=1MHz,opendrain Unit Note/TestCondition VGS=0V,VDS=100V,f=1MHz Table5Dynamiccharacteristics Values Parameter Symbol Input capacitance Ciss 1620 pF Output capacitance Coss 98 pF Effective output capacitance, energy related1) Co(er) 65 pF VGS=0V,VDS=0...480V Effective output capacitance, time related2) Co(tr) 308 pF ID=constant,VGS=0V, VDS=0...480V Turn-on delay time td(on) 12 ns Rise time tr 11 ns Turn-off delay time td(off) 112 ns Fall time tf 10 ns Min. Typ. Max. VDD=400V,VGS=13V,ID=11.0A, RG=3.4Ω (see table 9) Table6Gatechargecharacteristics Parameter Symbol Gate to source charge Qgs Gate to drain charge Values Unit Note/TestCondition 8.9 nC VDD=480V,ID=11A,VGS=0to10V Qgd 38 nC Gate charge total Qg 73 nC Gate plateau voltage Vplateau 5.5 V 1) 2) Min. Typ. Max. Co(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% V(BR)DSS Co(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% V(BR)DSS Final Data Sheet 6 Rev.2.0,2014-03-19 650VCoolMOS™E6PowerTransistor IPL65R190E6 Table7Reversediodecharacteristics Parameter Symbol Diode forward voltage VSD Reverse recovery time Values Unit Note/TestCondition 0.9 V VGS=0V,IF=11.0A,Tj=25°C trr 410 ns Reverse recovery charge Qrr 6.1 µC VR=400V,IF=11.0A, diF/dt=100A/µs (see table 8) Peak reverse recovery current Irrm 28 A Final Data Sheet Min. 7 Typ. Max. Rev.2.0,2014-03-19 650VCoolMOS™E6PowerTransistor IPL65R190E6 5Electricalcharacteristicsdiagrams Diagram1:Powerdissipation Diagram2:Safeoperatingarea 102 160 1 µs 10 µs 140 100 µs 101 120 1 ms 100 10 ms ID[A] Ptot[W] 100 80 DC 10-1 60 40 10-2 20 0 0 25 50 75 100 125 10-3 150 100 101 TC[°C] 102 103 VDS[V] Ptot=f(TC) ID=f(VDS);TC=25°C;D=0;parameter:tp Diagram3:Safeoperatingarea Diagram4:Max.transientthermalimpedance 2 101 10 1 µs 10 µs 101 100 µs 1 ms 100 10 ms ID[A] 0.5 ZthJC[K/W] 100 DC -1 10 0.2 10-1 0.1 0.05 0.02 10-2 0.01 single pulse 10-3 100 101 102 103 10-2 10-5 10-4 VDS[V] 10-2 10-1 tp[s] ID=f(VDS);TC=80°C;D=0;parameter:tp Final Data Sheet 10-3 ZthJC=f(tP);parameter:D=tp/T 8 Rev.2.0,2014-03-19 650VCoolMOS™E6PowerTransistor IPL65R190E6 Diagram5:Typ.outputcharacteristics Diagram6:Typ.outputcharacteristics 70 40 20 V 20 V 10 V 35 60 8V 30 8V 50 10 V 7V 25 40 ID[A] ID[A] 7V 20 6V 15 5.5 V 10 5V 30 6V 20 5.5 V 10 4.5 V 5 5V 4.5 V 0 0 5 10 15 0 20 0 5 10 VDS[V] 15 20 VDS[V] ID=f(VDS);Tj=25°C;parameter:VGS ID=f(VDS);Tj=125°C;parameter:VGS Diagram7:Typ.drain-sourceon-stateresistance Diagram8:Drain-sourceon-stateresistance 1.0 0.6 0.9 0.5 0.8 0.4 0.6 5.5 V 6V 6.5 V 7V RDS(on)[Ω] RDS(on)[Ω] 0.7 10 V 0.5 20 V 0.3 98% typ 0.2 0.4 0.1 0.3 0.2 0 5 10 15 20 25 30 35 40 45 0.0 -50 -25 0 25 ID[A] RDS(on)=f(ID);Tj=125°C;parameter:VGS Final Data Sheet 50 75 100 125 150 Tj[°C] RDS(on)=f(Tj);ID=7.3A;VGS=10V 9 Rev.2.0,2014-03-19 650VCoolMOS™E6PowerTransistor IPL65R190E6 Diagram9:Typ.transfercharacteristics Diagram10:Typ.gatecharge 70 10 25 °C 9 60 8 50 120 V 7 480 V 6 VGS[V] ID[A] 40 150 °C 30 5 4 3 20 2 10 1 0 0 2 4 6 8 10 0 12 0 10 20 30 VGS[V] 40 50 60 70 80 Qgate[nC] ID=f(VGS);VDS=20V;parameter:Tj VGS=f(Qgate);ID=11Apulsed;parameter:VDD Diagram11:Forwardcharacteristicsofreversediode Diagram12:Avalancheenergy 2 10 500 450 400 350 101 300 EAS[mJ] IF[A] 125 °C 25 °C 100 250 200 150 100 50 10-1 0.0 0.5 1.0 1.5 2.0 0 25 50 VSD[V] 100 125 150 Tj[°C] IF=f(VSD);parameter:Tj Final Data Sheet 75 EAS=f(Tj);ID=3.5A;VDD=50V 10 Rev.2.0,2014-03-19 650VCoolMOS™E6PowerTransistor IPL65R190E6 Diagram13:Drain-sourcebreakdownvoltage Diagram14:Typ.capacitances 104 760 740 Ciss 720 103 680 C[pF] VBR(DSS)[V] 700 660 Coss 102 640 101 620 Crss 600 580 -60 -20 20 60 100 140 180 100 0 100 Tj[°C] 200 300 400 500 VDS[V] VBR(DSS)=f(Tj);ID=1mA C=f(VDS);VGS=0V;f=1MHz Diagram15:Typ.Cossstoredenergy 8 7 6 Eoss[µJ] 5 4 3 2 1 0 0 100 200 300 400 500 VDS[V] Eoss=f(VDS) Final Data Sheet 11 Rev.2.0,2014-03-19 650VCoolMOS™E6PowerTransistor IPL65R190E6 6TestCircuits Table8Diodecharacteristics Test circuit for diode characteristics Diode recovery waveform V ,I Rg1 VDS( peak) VDS VDS VDS trr IF Rg 2 tF tS dIF / dt QF IF t dIrr / dt trr =tF +tS Qrr = QF + QS Irrm Rg1 = Rg 2 IF 10 %Irrm QS Table9Switchingtimes Switching times test circuit for inductive load Switching times waveform VDS 90% VDS VGS VGS 10% td(on) td(off) tr ton tf toff Table10Unclampedinductiveload Unclamped inductive load test circuit Unclamped inductive waveform V(BR)DS ID VD VDS VDS Final Data Sheet 12 ID VDS Rev.2.0,2014-03-19 650VCoolMOS™E6PowerTransistor IPL65R190E6 7PackageOutlines Figure1OutlinePG-VSON-4,dimensionsinmm/inches Final Data Sheet 13 Rev.2.0,2014-03-19 650VCoolMOS™E6PowerTransistor IPL65R190E6 8AppendixA Table11RelatedLinks • IFXCoolMOSWebpage:www.infineon.com • IFXDesignTools:www.infineon.com Final Data Sheet 14 Rev.2.0,2014-03-19 650VCoolMOS™E6PowerTransistor IPL65R190E6 RevisionHistory IPL65R190E6 Revision:2014-03-19,Rev.2.0 Previous Revision Revision Date Subjects (major changes since last revision) 2.0 2014-03-19 Release of final version WeListentoYourComments Anyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall?Yourfeedbackwillhelpustocontinuously improvethequalityofthisdocument.Pleasesendyourproposal(includingareferencetothisdocument)to: [email protected] Publishedby InfineonTechnologiesAG 81726München,Germany ©2014InfineonTechnologiesAG AllRightsReserved. LegalDisclaimer Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics.With respecttoanyexamplesorhintsgivenherein,anytypicalvaluesstatedhereinand/oranyinformationregardingtheapplication ofthedevice,InfineonTechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithout limitation,warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty. Information Forfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestInfineon TechnologiesOffice(www.infineon.com). Warnings Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesinquestion, pleasecontactthenearestInfineonTechnologiesOffice. TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/or automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineonTechnologies,ifa failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Lifesupportdevicesorsystemsare intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.Iftheyfail,itis reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered. Final Data Sheet 15 Rev.2.0,2014-03-19