IPL65R165CFD Data Sheet (1.6 MB, EN)

MOSFET
MetalOxideSemiconductorFieldEffectTransistor
CoolMOS™CFD2650VThinpak
650VCoolMOS™CFD2PowerTransistor
IPL65R165CFD
DataSheet
Rev.2.0
Final
Industrial&Multimarket
650VCoolMOS™CFD2PowerTransistor
IPL65R165CFD
1Description
ThinPAK8x8
CoolMOS™isarevolutionarytechnologyforhighvoltagepower
MOSFETs,designedaccordingtothesuperjunction(SJ)principleand
pioneeredbyInfineonTechnologies.650VCoolMOS™CFD2series
combinestheexperienceoftheleadingSJMOSFETsupplierwithhigh
classinnovation.Theresultingdevicesprovideallbenefitsofafast
switchingSJMOSFETwhileofferinganextremelyfastandrobustbody
diode.Thiscombinationofextremelylowswitching,commutationand
conductionlossestogetherwithhighestrobustnessmakeespecially
resonantswitchingapplicationsmorereliable,moreefficient,lighterand
cooler.
ThinPAK
ThinPAKisaanewleadlessSMDpackageforHVMOSFETs.Thenew
packagehasaverysmallfootprintofonly64mm²(vs.150mm²forthe
D²PAK)andaverylowprofilewithonly1mmheight(vs.4.4mmforthe
D²PAK).Thesignificantlysmallerpackagesize,combinedwithbenchmark
lowparasiticinductances,providesdesignerswithanewandeffectiveway
todecreasesystemsolutionsizeinpower-densitydrivendesigns.
Drain
Pin 5
Gate
Pin 1
Driver
Source
Pin 2
Features
Power
Source
Pin 3,4
•Reducedboardspaceconsumption
•Increasedpowerdensity
•Shortcommutationloop
•Smoothswitchingwaveform
•Ultra-fastbodydiode
•Veryhighcommutationruggedness
•ExtremelylowlossesduetoverylowFOMRdson*QgandEoss
•Easytouse/drive
•QualifiedforindustrialgradeapplicationsaccordingtoJEDEC
(J-STD20andJESD22)
•Pb-freeplating,Halogenfreemoldcompound
Applications
650VCoolMOS™CFD2isespeciallysuitableforresonantswitching
stagesfore.g.PCSilverbox,LCDTV,Lighting,ServerandTelecom.
Table1KeyPerformanceParameters
Parameter
Value
Unit
VDS @ Tj max
700
V
RDS(on),max
0.165
Ω
Qg,typ
86
nC
ID,pulse
67
A
Eoss @ 400V
6.8
µJ
Body diode di/dt
900
A/µs
Qrr
0.7
µC
trr
140
ns
Irrm
8.8
A
Type/OrderingCode
Package
Marking
IPL65R165CFD
PG-VSON-4
65F6165
Final Data Sheet
2
RelatedLinks
see Appendix A
Rev.2.0,2014-03-19
650VCoolMOS™CFD2PowerTransistor
IPL65R165CFD
TableofContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Test Circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Appendix A . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Final Data Sheet
3
Rev.2.0,2014-03-19
650VCoolMOS™CFD2PowerTransistor
IPL65R165CFD
2Maximumratings
atTj=25°C,unlessotherwisespecified
Table2Maximumratings
Parameter
Symbol
Continuous drain current1)
ID
Values
Min.
Typ.
Max.
21.3
Unit
Note/TestCondition
A
TC=25°C
TC=100°C
13.5
Pulsed drain current
ID‚pulse
67
A
TC=25°C
Avalanche energy, single pulse
EAS
614
mJ
ID=4.3A,VDD=50V
(see table 10)
Avalanche energy, repetitive
EAR
0.93
mJ
ID=4.3A,VDD=50V
Avalanche current, repetitive
IAR
4.3
A
MOSFET dv/dt ruggedness
dv/dt
50
V/ns
VDS=0...400V
Gate source voltage
VGS
-20
20
V
static
-30
30
-40
150
°C
2)
AC (f > 1 Hz)
Operating and storage temperature
Tj‚Tstg
Continuous diode forward current
IS
21.3
A
TC=25°C
Diode pulse current
IS‚pulse
67
A
TC=25°C
Reverse diode dv/dt
dv/dt
50
V/ns
Maximum diode commutation speed
dif/dt
900
Power dissipation
Ptot
195
3)
VDS=0...400V,ISD≤ID,
Tj=25°C
A/µs
(see table 8)
W
TC=25°C
1)
Limited by Tj max.
Pulse width tp limited by Tj max
3)
Vpeak<V(BR)DSS, Tj<Tj max, identical low side and high side switch with same Rg
2)
Final Data Sheet
4
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650VCoolMOS™CFD2PowerTransistor
IPL65R165CFD
3Thermalcharacteristics
Table3ThermalcharacteristicsThinPAK8x8
Parameter
Symbol
Thermal resistance, junction - case
RthJC
Values
Min.
Thermal resistance, junction - ambient1) RthJA
Typ.
Max.
Unit
0.64
°C/W
62
°C/W
Tsold
260
SMD version, device on PCB,
minimal footprint
SMD version, device on PCB, 6cm²
cooling area
45
Soldering temperature, wave- &
reflowsoldering allowed
Note/TestCondition
°C
reflow MSL 3
1)
Device on 40mm*40mm*1.5mm one layer epoxy PCB FR4 with 6cm² copper area (thickness 70µm) for drain connection. PCB
is vertical without air stream cooling.
Final Data Sheet
5
Rev.2.0,2014-03-19
650VCoolMOS™CFD2PowerTransistor
IPL65R165CFD
4Electricalcharacteristics
atTj=25°C,unlessotherwisespecified
Table4Staticcharacteristics
Values
Parameter
Symbol
Drain-source breakdown voltage
V(BR)DSS
650
Gate threshold voltage
VGS(th)
3.5
Zero gate voltage drain current
IDSS
Min.
Typ.
4
Unit
Note/TestCondition
V
VGS=0V,ID=1mA
4.5
V
VDS=VGS,ID=0.9mA
1
µA
VDS=650V,VGS=0V,Tj=25°C
Max.
VDS=650V,VGS=0V,Tj=150°C
300
Gate-source leakage current
IGSS
Drain-source on-state resistance
RDS(on)
0.149
100
nA
VGS=20V,VDS=0V
0.165
Ω
VGS=10V,ID=9.3A,Tj=25°C
VGS=10V,ID=9.3A,Tj=150°C
0.386
Gate resistance
RG
1.5
Ω
f=1MHz,opendrain
Unit
Note/TestCondition
VGS=0V,VDS=100V,f=1MHz
Table5Dynamiccharacteristics
Values
Parameter
Symbol
Input capacitance
Ciss
2340
pF
Output capacitance
Coss
110
pF
Effective output capacitance, energy
related1)
Co(er)
90
pF
VGS=0V,VDS=0...400V
Effective output capacitance, time
related2)
Co(tr)
420
pF
ID=constant,VGS=0V,
VDS=0...400V
Turn-on delay time
td(on)
12.4
ns
Rise time
tr
7.6
ns
Turn-off delay time
td(off)
52.8
ns
Fall time
tf
5.6
ns
Min.
Typ.
Max.
VDD=400V,VGS=13V,ID=14.0A,
RG=1.8Ω
(see table 9)
Table6Gatechargecharacteristics
Parameter
Symbol
Gate to source charge
Qgs
Gate to drain charge
Values
Unit
Note/TestCondition
15
nC
VDD=480V,ID=14A,VGS=0to10V
Qgd
47
nC
Gate charge total
Qg
86
nC
Gate plateau voltage
Vplateau
6.4
V
1)
2)
Min.
Typ.
Max.
Co(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 400V
Co(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 400V
Final Data Sheet
6
Rev.2.0,2014-03-19
650VCoolMOS™CFD2PowerTransistor
IPL65R165CFD
Table7Reversediodecharacteristics
Parameter
Symbol
Diode forward voltage
VSD
Reverse recovery time
Values
Unit
Note/TestCondition
0.9
V
VGS=0V,IF=14.0A,Tj=25°C
trr
140
ns
Reverse recovery charge
Qrr
0.7
µC
VR=400V,IF=14.0A,
diF/dt=100A/µs
(see table 8)
Peak reverse recovery current
Irrm
8.8
A
Final Data Sheet
Min.
7
Typ.
Max.
Rev.2.0,2014-03-19
650VCoolMOS™CFD2PowerTransistor
IPL65R165CFD
5Electricalcharacteristicsdiagrams
Diagram1:Powerdissipation
Diagram2:Safeoperatingarea
102
200
1 µs
10 µs
175
100 µs
101
150
1 ms
100
10 ms
ID[A]
Ptot[W]
125
100
DC
10-1
75
50
10-2
25
0
0
25
50
75
100
125
10-3
150
100
101
TC[°C]
102
103
VDS[V]
Ptot=f(TC)
ID=f(VDS);TC=25°C;D=0;parameter:tp
Diagram3:Safeoperatingarea
Diagram4:Max.transientthermalimpedance
2
101
10
1 µs
10 µs
1
10
100 µs
1 ms
100
ID[A]
ZthJC[K/W]
10 ms
100
DC
10-1
0.5
0.2
10-1
0.1
0.05
-2
10
0.02
0.01
10-3
100
101
102
103
10-2
single pulse
10-5
10-4
VDS[V]
10-2
10-1
tp[s]
ID=f(VDS);TC=80°C;D=0;parameter:tp
Final Data Sheet
10-3
ZthJC=f(tP);parameter:D=tp/T
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650VCoolMOS™CFD2PowerTransistor
IPL65R165CFD
Diagram5:Typ.outputcharacteristics
Diagram6:Typ.outputcharacteristics
70
45
20 V
20 V
10 V
40
60
10 V
35
50
8V
8V
30
ID[A]
ID[A]
40
30
7V
25
20
7V
15
6V
20
10
5.5 V
6V
10
5
5.5 V
0
4.5 V
0
5
10
15
5V
4.5 V
5V
0
20
0
5
10
VDS[V]
15
ID=f(VDS);Tj=125°C;parameter:VGS
Diagram7:Typ.drain-sourceon-stateresistance
Diagram8:Drain-sourceon-stateresistance
1.00
0.45
0.90
0.40
0.80
0.35
0.70
0.30
5V
5.5 V
6V
6.5 V
RDS(on)[Ω]
RDS(on)[Ω]
ID=f(VDS);Tj=25°C;parameter:VGS
0.60
7V
0.50
0.40
0.25
0.20
0.10
0.20
0.05
0
10
20
30
40
0.00
-50
-25
0
25
ID[A]
50
75
100
125
150
Tj[°C]
RDS(on)=f(ID);Tj=125°C;parameter:VGS
Final Data Sheet
typ
98%
0.15
10 V
0.30
0.10
20
VDS[V]
RDS(on)=f(Tj);ID=9.3A;VGS=10V
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650VCoolMOS™CFD2PowerTransistor
IPL65R165CFD
Diagram9:Typ.transfercharacteristics
Diagram10:Typ.gatecharge
70
10
9
25 °C
60
8
120 V
50
400 V
7
6
VGS[V]
ID[A]
40
150 °C
30
5
4
3
20
2
10
1
0
0
2
4
6
8
10
0
12
0
25
VGS[V]
50
75
100
Qgate[nC]
ID=f(VGS);VDS=20V;parameter:Tj
VGS=f(Qgate);ID=14Apulsed;parameter:VDD
Diagram11:Forwardcharacteristicsofreversediode
Diagram12:Avalancheenergy
2
10
700
600
500
IF[A]
125 °C
EAS[mJ]
101
25 °C
400
300
100
200
100
10-1
0.0
0.5
1.0
1.5
2.0
0
25
50
VSD[V]
100
125
150
Tj[°C]
IF=f(VSD);parameter:Tj
Final Data Sheet
75
EAS=f(Tj);ID=4.3A;VDD=50V
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650VCoolMOS™CFD2PowerTransistor
IPL65R165CFD
Diagram13:Drain-sourcebreakdownvoltage
Diagram14:Typ.capacitances
104
760
740
Ciss
720
103
680
C[pF]
VBR(DSS)[V]
700
660
Coss
102
640
101
620
Crss
600
580
-50
0
50
100
150
200
100
0
100
Tj[°C]
200
300
400
500
VDS[V]
VBR(DSS)=f(Tj);ID=1mA
C=f(VDS);VGS=0V;f=1MHz
Diagram15:Typ.Cossstoredenergy
10
9
8
7
Eoss[µJ]
6
5
4
3
2
1
0
0
100
200
300
400
500
VDS[V]
Eoss=f(VDS)
Final Data Sheet
11
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650VCoolMOS™CFD2PowerTransistor
IPL65R165CFD
6TestCircuits
Table8Diodecharacteristics
Test circuit for diode characteristics
Diode recovery waveform
V ,I
Rg1
VDS( peak)
VDS
VDS
VDS
trr
IF
Rg 2
tF
tS
dIF / dt
QF
IF
t
dIrr / dt trr =tF +tS
Qrr = QF + QS
Irrm
Rg1 = Rg 2
IF
10 %Irrm
QS
Table9Switchingtimes
Switching times test circuit for inductive load
Switching times waveform
VDS
90%
VDS
VGS
VGS
10%
td(on)
td(off)
tr
ton
tf
toff
Table10Unclampedinductiveload
Unclamped inductive load test circuit
Unclamped inductive waveform
V(BR)DS
ID
VD
VDS
VDS
Final Data Sheet
12
ID
VDS
Rev.2.0,2014-03-19
650VCoolMOS™CFD2PowerTransistor
IPL65R165CFD
7PackageOutlines
Figure1OutlinePG-VSON-4,dimensionsinmm/inches
Final Data Sheet
13
Rev.2.0,2014-03-19
650VCoolMOS™CFD2PowerTransistor
IPL65R165CFD
8AppendixA
Table11RelatedLinks
• IFXDesignTools:www.infineon.com
• IFXCoolMOSWebpage:www.infineon.com
Final Data Sheet
14
Rev.2.0,2014-03-19
650VCoolMOS™CFD2PowerTransistor
IPL65R165CFD
RevisionHistory
IPL65R165CFD
Revision:2014-03-19,Rev.2.0
Previous Revision
Revision
Date
Subjects (major changes since last revision)
2.0
2014-03-19
Release of final version
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InfineonTechnologiesAG
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©2014InfineonTechnologiesAG
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LegalDisclaimer
Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics.With
respecttoanyexamplesorhintsgivenherein,anytypicalvaluesstatedhereinand/oranyinformationregardingtheapplication
ofthedevice,InfineonTechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithout
limitation,warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty.
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Forfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestInfineon
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Warnings
Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesinquestion,
pleasecontactthenearestInfineonTechnologiesOffice.
TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/or
automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineonTechnologies,ifa
failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand
aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Lifesupportdevicesorsystemsare
intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.Iftheyfail,itis
reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered.
Final Data Sheet
15
Rev.2.0,2014-03-19