IDW30C65D1 Data Sheet (1.6 MB, EN)

Diode
RapidSwitchingEmitterControlledDiode
IDW30C65D1
EmitterControlledDiodeRapid1CommonCathodeSeries
Datasheet
IndustrialPowerControl
IDW30C65D1
EmitterControlledDiodeRapid1CommonCathodeSeries
RapidSwitchingEmitterControlledDiode
Features:
A1 C1 C2 A2
A2
A1
•QualifiedaccordingtoJEDECfortargetapplications
•650VEmitterControlledtechnology
•Temperaturestablebehaviourofkeyparameters
•Lowforwardvoltage(VF)
•Ultrafastrecovery
•Lowreverserecoverycharge(Qrr)
•Lowreverserecoverycurrent(Irrm)
•175°Cjunctionoperatingtemperature
•Pb-freeleadplating
•RoHScompliant
C
Applications:
•AC/DCconverters
•BoostdiodeinPFCstages
•Freewheelingdiodesininvertersandmotordrives
•Generalpurposeinverters
•Switchmodepowersupplies
1
Packagepindefinition:
2
3
•Pin1-anode(A1)
•Pin2andbackside-cathode(C)
•Pin3-anode(A2)
Key Performance and Package Parameters
Type
IDW30C65D1
Vrrm
If
Vf, Tvj=25°C
Tvjmax
Marking
Package
650V
2x 15A
1.35V
175°C
C30ED1
PG-TO247-3
2
Rev.2.1,2014-12-09
IDW30C65D1
EmitterControlledDiodeRapid1CommonCathodeSeries
Table of Contents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Maximum Ratings (per leg) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Thermal Resistances (per leg) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical Characteristics Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
3
Rev.2.1,2014-12-09
IDW30C65D1
EmitterControlledDiodeRapid1CommonCathodeSeries
Maximum Ratings (per leg)
For optimum lifetime and reliability, Infineon recommends operating conditions that do not exceed 80% of the maximum ratings stated in this datasheet.
Parameter
Symbol
Value
Unit
Repetitivepeakreversevoltage,Tvj≥25°C
VRRM
650
V
Diodeforwardcurrent,limitedbyTvjmax
TC=25°C
TC=100°C
IF
30.0
15.0
A
Diodepulsedcurrent,tplimitedbyTvjmax
IFpuls
45.0
A
Diode surge non repetitive forward current
TC=25°C,tp=10.0ms,sinehalfwave
IFSM
PowerdissipationTC=25°C
PowerdissipationTC=100°C
Ptot
92.0
46.0
W
Operating junction temperature
Tvj
-40...+175
°C
Storage temperature
Tstg
-55...+150
°C
A
120.0
Soldering temperature,
wave soldering 1.6mm (0.063in.) from case for 10s
°C
260
Mounting torque, M3 screw
Maximum of mounting processes: 3
M
0.6
Nm
Thermal Resistances (per leg)
Parameter
Characteristic
Symbol Conditions
Max. Value
Unit
Diode thermal resistance,1)
junction - case
Rth(j-c)
1.64
K/W
Thermal resistance
junction - ambient
Rth(j-a)
40
K/W
Electrical Characteristics (per leg), at Tvj = 25°C, unless otherwise specified
Parameter
Symbol Conditions
Value
min.
typ.
max.
-
1.35
1.30
1.26
1.70
-
-
600.0
40.0
-
Unit
Static Characteristic
Diode forward voltage
VF
IF=15.0A
Tvj=25°C
Tvj=125°C
Tvj=175°C
Reverse leakage current2)
IR
VR=650V
Tvj=25°C
Tvj=175°C
V
µA
Electrical Characteristic, at Tvj = 25°C, unless otherwise specified
Parameter
Symbol Conditions
Value
min.
typ.
max.
-
13.0
-
Unit
Dynamic Characteristic
Internal emitter inductance
measured 5mm (0.197 in.) from
case
1)
2)
LE
nH
Pleasebeawarethatinnonstandardloadconditions,duetohighRth(j-c),TvjclosetoTvjmaxcanbereached.
Reverse leakage current per leg specified for operating conditions with zero voltage applied to the other leg.
4
Rev.2.1,2014-12-09
IDW30C65D1
EmitterControlledDiodeRapid1CommonCathodeSeries
Switching Characteristics (per leg), Inductive Load
Parameter
Symbol Conditions
Value
Unit
min.
typ.
max.
Tvj=25°C,
VR=400V,
IF=15.0A,
diF/dt=1000A/µs,
Lσ=30nH,
Cσ=40pF,
switch IKW30N65H5.
-
71
-
ns
-
0.37
-
µC
-
8.6
-
A
-
-810
-
A/µs
Tvj=25°C,
VR=400V,
IF=15.0A,
diF/dt=200A/µs,
Lσ=30nH,
Cσ=40pF,
switch IKW30N65H5.
-
114
-
ns
-
0.28
-
µC
-
3.4
-
A
-
-150
-
A/µs
Diode Characteristic, at Tvj = 25°C
Diode reverse recovery time
trr
Diode reverse recovery charge
Qrr
Diode peak reverse recovery current Irrm
Diode peak rate of fall of reverse
recoverycurrentduringtb
dirr/dt
Diode reverse recovery time
trr
Diode reverse recovery charge
Qrr
Diode peak reverse recovery current Irrm
Diode peak rate of fall of reverse
recoverycurrentduringtb
dirr/dt
Switching Characteristics (per leg), Inductive Load
Parameter
Symbol Conditions
Value
Unit
min.
typ.
max.
Tvj=175°C,
VR=400V,
IF=15.0A,
diF/dt=1000A/µs,
Lσ=30nH,
Cσ=40pF,
switch IKW30N65H5.
-
95
-
ns
-
0.91
-
µC
-
14.1
-
A
-
-720
-
A/µs
Tvj=125°C,
VR=400V,
IF=15.0A,
diF/dt=200A/µs,
Lσ=30nH,
Cσ=40pF,
switch IKW30N65H5.
-
146
-
ns
-
0.52
-
µC
-
4.7
-
A
-
-230
-
A/µs
Diode Characteristic, at Tvj = 175°C/125°C
Diode reverse recovery time
trr
Diode reverse recovery charge
Qrr
Diode peak reverse recovery current Irrm
Diode peak rate of fall of reverse
recoverycurrentduringtb
dirr/dt
Diode reverse recovery time
trr
Diode reverse recovery charge
Qrr
Diode peak reverse recovery current Irrm
Diode peak rate of fall of reverse
recoverycurrentduringtb
dirr/dt
5
Rev.2.1,2014-12-09
IDW30C65D1
EmitterControlledDiodeRapid1CommonCathodeSeries
100
35
30
IF,FORWARDCURRENT[A]
Ptot,POWERDISSIPATION[W]
80
60
40
25
20
15
10
20
5
0
25
50
75
100
125
150
0
175
25
TC,CASETEMPERATURE[°C]
50
75
100
125
150
175
TC,CASETEMPERATURE[°C]
Figure 1. Power dissipation per leg as a function of
case temperature
(Tvj≤175°C)
Figure 2. Diode forward current per leg as a function of
case temperature
(Tvj≤175°C)
175
1
trr,REVERSERECOVERYTIME[ns]
Zth(j-c),TRANSIENTTHERMALIMPEDANCE[K/W]
200
D = 0.5
0.2
0.1
0.05
0.02
0.1
0.01
single pulse
Tvj=25°C,IF=15A
Tvj=125°C,IF=15A
Tvj=175°C,IF=15A
150
125
100
75
50
25
i:
1
2
3
4
5
6
ri[K/W]: 0.033644 0.33657 0.63479 0.58708 0.041314 2.0E-3
τi[s]:
1.8E-5
1.8E-4
9.8E-4
5.7E-3
0.07843 2.0366
0.01
1E-6
1E-5
1E-4
0.001
0.01
0.1
0
200
1
tp,PULSEWIDTH[s]
600
1000
1400
1800
2200
2600
3000
dIF/dt,DIODECURRENTSLOPE[A/µs]
Figure 3. Diode transient thermal impedance per leg as Figure 4. Typical reverse recovery time per leg as a
a function of pulse width
function of diode current slope
(D=tp/T)
(VR=400V)
6
Rev.2.1,2014-12-09
IDW30C65D1
EmitterControlledDiodeRapid1CommonCathodeSeries
1.2
35
30
1.0
Irrm,REVERSERECOVERYCURRENT[A]
Qrr,REVERSERECOVERYCHARGE[µC]
Tvj=25°C,IF=15A
Tvj=125°C,IF=15A
Tvj=175°C,IF=15A
0.8
0.6
0.4
0.2
0.0
200
600
1000
1400
1800
2200
2600
25
20
15
10
5
0
200
3000
dIF/dt,DIODECURRENTSLOPE[A/µs]
600
1000
1400
1800
2200
2600
3000
dIF/dt,DIODECURRENTSLOPE[A/µs]
Figure 5. Typical reverse recovery charge per leg as a
function of diode current slope
(VR=400V)
Figure 6. Typical peak reverse recovery current per leg
as a function of diode current slope
(VR=400V)
0
30
Tvj=25°C,IF=15A
Tvj=125°C,IF=15A
Tvj=175°C,IF=15A
-200
Tvj=25°C
Tvj=175°C
25
-400
IF,FORWARDCURRENT[A]
dIrr/dt,DIODEPEAKRATEOFFALLOFIrr[A/µs]
Tvj=25°C,IF=15A
Tvj=125°C,IF=15A
Tvj=175°C,IF=15A
-600
-800
-1000
-1200
20
15
10
5
-1400
-1600
200
600
1000
1400
1800
2200
2600
0
0.00
3000
dIF/dt,DIODECURRENTSLOPE[A/µs]
0.25
0.50
0.75
1.00
1.25
1.50
1.75
2.00
VF,FORWARDVOLTAGE[V]
Figure 7. Typical diode peak rate of fall of rev. rec.
current per leg as a function of diode current
slope
(VR=400V)
7
Figure 8. Typical diode forward current per leg as a
function of forward voltage
Rev.2.1,2014-12-09
IDW30C65D1
EmitterControlledDiodeRapid1CommonCathodeSeries
2.00
IF=3.75A
IF=7.5A
IF=15A
IF=22.5A
IF=30A
VF,FORWARDVOLTAGE[V]
1.75
1.50
1.25
1.00
0.75
0.50
25
50
75
100
125
150
175
Tvj,JUNCTIONTEMPERATURE[°C]
Figure 9. Typical diode forward voltage per leg as a
function of junction temperature
8
Rev.2.1,2014-12-09
IDW30C65D1
EmitterControlledDiodeRapid1CommonCathodeSeries
PG-TO247-3
9
Rev.2.1,2014-12-09
IDW30C65D1
EmitterControlledDiodeRapid1CommonCathodeSeries
VGE(t)
I,V
90% VGE
t rr = t a + t b
Q rr = Q a + Q b
dIF/dt
a
10% VGE
b
t
Qa
IC(t)
Qb
dI
90% IC
90% IC
10% IC
10% IC
Figure C. Definition of diode switching
characteristics
t
VCE(t)
t
td(off)
tf
td(on)
t
tr
Figure A.
VGE(t)
90% VGE
Figure D.
10% VGE
t
IC(t)
CC
2% IC
t
Figure E. Dynamic test circuit
Parasitic inductance Ls,
parasitic capacitor Cs,
relief capacitor Cr,
(only for ZVT switching)
VCE(t)
t2
E
off
=
t4
VCE x IC x dt
E
t1
t1
on
=
VCE x IC x d t
2% VCE
t3
t2
t3
t4
t
Figure B.
10
Rev.2.1,2014-12-09
IDW30C65D1
Emitter Controlled Diode Rapid 1 Common Cathode Series
Revision History
IDW30C65D1
Revision: 2014-12-09, Rev. 2.1
Previous Revision
Revision
Date
Subjects (major changes since last revision)
1.1
2014-12-02
Preliminary data sheet
2.1
2014-12-09
Final data sheet
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Published by
Infineon Technologies AG
81726 Munich, Germany
81726 München, Germany
© 2014 Infineon Technologies AG
All Rights Reserved.
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For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon
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Due to technical requirements, components may contain dangerous substances. For information on the types in
question, please contact the nearest Infineon Technologies Office.
The Infineon Technologies component described in this Data Sheet may be used in life-support devices or systems
and/or automotive, aviation and aerospace applications or systems only with the express written approval of Infineon
Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support,
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endangered.
11
Rev. 2.1, 2014-12-09