IDW40E65D1 Data Sheet (1.6 MB, EN)

Diode
RapidSwitchingEmitterControlledDiode
IDW40E65D1
EmitterControlledDiodeRapid1Series
Datasheet
IndustrialPowerControl
IDW40E65D1
EmitterControlledDiodeRapid1Series
RapidSwitchingEmitterControlledDiode
Features:
A
•650VEmitterControlledtechnology
•Temperaturestablebehaviourofkeyparameters
•Lowforwardvoltage(VF)
•Ultrafastrecovery
•Lowreverserecoverycharge(Qrr)
•Lowreverserecoverycurrent(Irrm)
•Softnessfactor>1
•175°Cjunctionoperatingtemperature
•Pb-freeleadplating;RoHScompliant
C
Applications:
•AC/DCconverters
•BoostdiodeinPFCstages
•Freewheelingdiodesininvertersandmotordrives
•Generalpurposeinverters
•Switchmodepowersupplies
Packagepindefinition:
1
2
3
•Pin1-notconnected
•Pin2andbackside-cathode
•Pin3-anode
KeyPerformanceandPackageParameters
Type
IDW40E65D1
Vrrm
If
Vf,Tvj=25°C
Tvjmax
Marking
Package
650V
40A
1.35V
175°C
E40ED1
PG-TO247-3
2
Rev.2.2,2013-12-16
IDW40E65D1
EmitterControlledDiodeRapid1Series
TableofContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical Characteristics Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
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Rev.2.2,2013-12-16
IDW40E65D1
EmitterControlledDiodeRapid1Series
MaximumRatings
Foroptimumlifetimeandreliability,Infineonrecommendsoperatingconditionsthatdonotexceed80%ofthemaximumratingsstatedinthisdatasheet.
Parameter
Symbol
Value
Unit
Repetitive peak reverse voltage
VRRM
650
V
Diodeforwardcurrent,limitedbyTvjmax
TC=25°C
TC=100°C
IF
80.0
40.0
A
Diodepulsedcurrent,tplimitedbyTvjmax
IFpuls
120.0
A
Diode surge non repetitive forward current
TC=25°C,tp=10.0ms,sinehalfwave
IFSM
PowerdissipationTC=25°C
Ptot
179.0
W
Operating junction temperature
Tvj
-40...+175
°C
Storage temperature
Tstg
-55...+150
°C
A
320.0
Soldering temperature,
wave soldering 1.6 mm (0.063 in.) from case for 10s
°C
260
Mounting torque, M3 screw
Maximum of mounting processes: 3
M
0.6
Nm
ThermalResistance
Parameter
Characteristic
Symbol Conditions
Max.Value
Unit
Diode thermal resistance,1)
junction - case
Rth(j-c)
0.84
K/W
Thermal resistance
junction - ambient
Rth(j-a)
40
K/W
ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified
Parameter
Symbol Conditions
Value
min.
typ.
max.
-
1.35
1.32
1.28
1.70
-
-
-
Unit
StaticCharacteristic
Diode forward voltage
VF
IF=40.0A
Tvj=25°C
Tvj=125°C
Tvj=175°C
Reverse leakage current
IR
VR=650V
Tvj=25°C
Tvj=175°C
V
40.0 µA
4000.0
ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified
Parameter
Symbol Conditions
Value
min.
typ.
max.
-
13.0
-
Unit
DynamicCharacteristic
Internal emitter inductance
measured 5mm (0.197 in.) from
case
1)
LE
nH
Please be aware that in non standard load conditions, due to high Rth(j-c), Tvj close to Tvjmax can be reached.
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Rev.2.2,2013-12-16
IDW40E65D1
EmitterControlledDiodeRapid1Series
SwitchingCharacteristic,InductiveLoad
Parameter
Symbol Conditions
Value
Unit
min.
typ.
max.
-
77
-
ns
-
0.87
-
µC
-
17.5
-
A
-
-1520
-
A/µs
-
129
-
ns
-
0.49
-
µC
-
6.9
-
A
-
-300
-
A/µs
DiodeCharacteristic,atTvj=25°C
Diode reverse recovery time
trr
Diode reverse recovery charge
Qrr
Diode peak reverse recovery current Irrm
Diode peak rate of fall of reverse
recoverycurrentduringtb
dirr/dt
Diode reverse recovery time
trr
Diode reverse recovery charge
Qrr
Diode peak reverse recovery current Irrm
Diode peak rate of fall of reverse
recoverycurrentduringtb
Tvj=25°C,
VR=400V,
IF=40.0A,
diF/dt=1000A/µs
Tvj=25°C,
VR=400V,
IF=40.0A,
diF/dt=200A/µs
dirr/dt
SwitchingCharacteristic,InductiveLoad
Parameter
Symbol Conditions
Value
Unit
min.
typ.
max.
-
110
-
ns
-
2.36
-
µC
-
27.3
-
A
-
-1320
-
A/µs
-
163
-
ns
-
1.04
-
µC
-
10.4
-
A
-
-600
-
A/µs
DiodeCharacteristic,atTvj=175°C/125°C
Diode reverse recovery time
trr
Diode reverse recovery charge
Qrr
Diode peak reverse recovery current Irrm
Diode peak rate of fall of reverse
recoverycurrentduringtb
dirr/dt
Diode reverse recovery time
trr
Diode reverse recovery charge
Qrr
Diode peak reverse recovery current Irrm
Diode peak rate of fall of reverse
recoverycurrentduringtb
Tvj=175°C,
VR=400V,
IF=40.0A,
diF/dt=1000A/µs
Tvj=125°C,
VR=400V,
IF=40.0A,
diF/dt=200A/µs
dirr/dt
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Rev.2.2,2013-12-16
IDW40E65D1
EmitterControlledDiodeRapid1Series
180
80
160
70
IF,FORWARDCURRENT[A]
Ptot,POWERDISSIPATION[W]
140
120
100
80
60
40
50
40
30
20
10
20
0
60
25
50
75
100
125
150
0
175
25
TC,CASETEMPERATURE[°C]
100
125
150
175
Figure 2. Diodeforwardcurrentasafunctionofcase
temperature
(Tvj≤175°C)
1
200
Tj=25°C, IF = 40A
Tj=125°C, IF = 40A
Tj=175°C, IF = 40A
180
trr,REVERSERECOVERYTIME[ns]
D=0.5
0.2
0.1
0.05
0.02
0.01
single pulse
0.1
1E-5
1E-4
0.001
0.01
0.1
160
140
120
100
80
60
40
20
i:
1
2
3
4
5
6
ri[K/W]: 0.015899 0.19942 0.23881 0.34593
0.036218 2.8E-3
τi[s]:
1.9E-5
2.4E-4
1.9E-3
0.01162857 0.0912415 1.815212
0.01
1E-6
75
TC,CASETEMPERATURE[°C]
Figure 1. Powerdissipationasafunctionofcase
temperature
(Tvj≤175°C)
Zth(j-c),TRANSIENTTHERMALRESISTANCE[K/W]
50
0
200
1
tp,PULSEWIDTH[s]
600
1000
1400
1800
2200
2600
3000
diF/dt,DIODECURRENTSLOPE[A/µs]
Figure 3. Diodetransientthermalimpedanceasa
functionofpulsewidth
(D=tp/T)
Figure 4. Typicalreverserecoverytimeasafunctionof
diodecurrentslope
(VR=400V)
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Rev.2.2,2013-12-16
IDW40E65D1
EmitterControlledDiodeRapid1Series
3.0
45
40
2.5
Irrm,REVERSERECOVERYCURRENT[A]
Qrr,REVERSERECOVERYCHARGE[µC]
Tj=25°C, IF = 40A
Tj=125°C, IF = 40A
Tj=175°C, IF = 40A
2.0
1.5
1.0
0.5
Tj=25°C, IF = 40A
Tj=125°C, IF = 40A
Tj=175°C, IF = 40A
35
30
25
20
15
10
5
0.0
200
600
1000
1400
1800
2200
2600
0
200
3000
diF/dt,DIODECURRENTSLOPE[A/µs]
600
1000
1400
1800
2200
2600
3000
diF/dt,DIODECURRENTSLOPE[A/µs]
Figure 5. Typicalreverserecoverychargeasafunction Figure 6. Typicalpeakreverserecoverycurrentasa
ofdiodecurrentslope
functionofdiodecurrentslope
(VR=400V)
(VR=400V)
0
Tj=25°C
Tj=175°C
70
-500
IF,FORWARDCURRENT[A]
dIrr/dt,diodepeakrateoffallofIrr[A/µs]
-250
80
Tj=25°C, IF = 40A
Tj=125°C, IF = 40A
Tj=175°C, IF = 40A
-750
-1000
-1250
-1500
-1750
60
50
40
30
20
-2000
10
-2250
-2500
200
600
1000
1400
1800
2200
2600
0
0.00
3000
diF/dt,DIODECURRENTSLOPE[A/µs]
0.25
0.50
0.75
1.00
1.25
1.50
1.75
2.00
VF,FORWARDVOLTAGE[V]
Figure 7. Typicaldiodepeakrateoffallofreverse
recoverycurrentasafunctionofdiode
currentslope
(VR=400V)
Figure 8. Typicaldiodeforwardcurrentasafunctionof
forwardvoltage
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Rev.2.2,2013-12-16
IDW40E65D1
EmitterControlledDiodeRapid1Series
2.00
IF=10A
IF=20A
IF=40A
IF=60A
IF=80A
VF,FORWARDVOLTAGE[V]
1.75
1.50
1.25
1.00
0.75
0.50
0
25
50
75
100
125
150
175
Tvj,JUNCTIONTEMPERATURE[°C]
Figure 9. Typicaldiodeforwardvoltageasafunctionof
junctiontemperature
8
Rev.2.2,2013-12-16
IDW40E65D1
EmitterControlledDiodeRapid1Series
PG-TO247-3
9
Rev.2.2,2013-12-16
IDW40E65D1
EmitterControlledDiodeRapid1Series
vGE(t)
90% VGE
a
a
10% VGE
b
b
t
iC(t)
90% IC
90% IC
10% IC
10% IC
t
vCE(t)
t
td(off)
tf
td(on)
t
tr
vGE(t)
90% VGE
10% VGE
t
iC(t)
CC
2% IC
t
vCE(t)
t2
E =
off
∫V
t
CE
t4
x IC x d t
E
1
t1
on
=
∫V
t
CE x IC x d t
2% VCE
3
t2
t3
t4
10
t
Rev.2.2,2013-12-16
IDW40E65D1
Emitter Controlled Diode Rapid 1 Series
Revision History
IDW40E65D1
Revision: 2013-12-16, Rev. 2.2
Previous Revision
Revision
Date
Subjects (major changes since last revision)
1.1
2013-03-13
Preliminary data sheet
2.1
2013-10-21
Final data sheet
2.2
2013-12-16
New Marking Pattern
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Published by
Infineon Technologies AG
81726 Munich, Germany
81726 München, Germany
© 2014 Infineon Technologies AG
All Rights Reserved.
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With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the
application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind,
including without limitation, warranties of non-infringement of intellectual property rights of any third party.
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For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon
Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances. For information on the types in
question, please contact the nearest Infineon Technologies Office.
The Infineon Technologies component described in this Data Sheet may be used in life-support devices or systems
and/or automotive, aviation and aerospace applications or systems only with the express written approval of Infineon
Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support,
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11
Rev. 2.2, 2013-12-16