IDP08E65D1 Data Sheet (1.7 MB, EN)

Diode
RapidSwitchingEmitterControlledDiode
IDP08E65D1
EmitterControlledDiodeRapid1Series
Datasheet
IndustrialPowerControl
IDP08E65D1
EmitterControlledDiodeRapid1Series
RapidSwitchingEmitterControlledDiode
Features:
A
•650VEmitterControlledtechnology
•Temperaturestablebehaviourofkeyparameters
•Lowforwardvoltage(VF)
•Ultrafastrecovery
•Lowreverserecoverycharge(Qrr)
•Lowreverserecoverycurrent(Irrm)
•Softnessfactor>1
•175°Cjunctionoperatingtemperature
•Pb-freeleadplating;RoHScompliant
C
C
Applications:
•AC/DCconverters
•BoostdiodeinPFCstages
•Freewheelingdiodesininvertersandmotordrives
•Generalpurposeinverters
•Switchmodepowersupplies
C
A
KeyPerformanceandPackageParameters
Type
IDP08E65D1
Vrrm
If
Vf,Tvj=25°C
Tvjmax
Marking
Package
650V
8A
1.35V
175°C
E08ED1
PG-TO220-2-1
2
Rev.2.2,2013-12-16
IDP08E65D1
EmitterControlledDiodeRapid1Series
TableofContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical Characteristics Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
3
Rev.2.2,2013-12-16
IDP08E65D1
EmitterControlledDiodeRapid1Series
MaximumRatings
Foroptimumlifetimeandreliability,Infineonrecommendsoperatingconditionsthatdonotexceed80%ofthemaximumratingsstatedinthisdatasheet.
Parameter
Symbol
Value
Unit
Repetitive peak reverse voltage
VRRM
650
V
Diodeforwardcurrent,limitedbyTvjmax
TC=25°C
TC=100°C
IF
16.0
8.0
A
Diodepulsedcurrent,tplimitedbyTvjmax
IFpuls
24.0
A
Diode surge non repetitive forward current
TC=25°C,tp=10.0ms,sinehalfwave
IFSM
PowerdissipationTC=25°C
Ptot
56.0
W
Operating junction temperature
Tvj
-40...+175
°C
Storage temperature
Tstg
-55...+150
°C
A
64.0
Soldering temperature,
wave soldering 1.6 mm (0.063 in.) from case for 10s
°C
260
Mounting torque, M3 screw
Maximum of mounting processes: 3
M
0.6
Nm
ThermalResistance
Parameter
Characteristic
Symbol Conditions
Max.Value
Unit
Diode thermal resistance,1)
junction - case
Rth(j-c)
2.69
K/W
Thermal resistance
junction - ambient
Rth(j-a)
62
K/W
ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified
Parameter
Symbol Conditions
Value
min.
typ.
max.
-
1.35
1.30
1.26
1.70
-
-
-
Unit
StaticCharacteristic
Diode forward voltage
VF
IF=8.0A
Tvj=25°C
Tvj=125°C
Tvj=175°C
Reverse leakage current
IR
VR=650V
Tvj=25°C
Tvj=175°C
V
40.0 µA
2000.0
ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified
Parameter
Symbol Conditions
Value
min.
typ.
max.
-
7.0
-
Unit
DynamicCharacteristic
Internal emitter inductance
measured 5mm (0.197 in.) from
case
1)
LE
nH
Please be aware that in non standard load conditions, due to high Rth(j-c), Tvj close to Tvjmax can be reached.
4
Rev.2.2,2013-12-16
IDP08E65D1
EmitterControlledDiodeRapid1Series
SwitchingCharacteristic,InductiveLoad
Parameter
Symbol Conditions
Value
Unit
min.
typ.
max.
-
51
-
ns
-
0.20
-
µC
-
7.9
-
A
-
-420
-
A/µs
-
80
-
ns
-
0.17
-
µC
-
2.8
-
A
-
-310
-
A/µs
DiodeCharacteristic,atTvj=25°C
Diode reverse recovery time
trr
Diode reverse recovery charge
Qrr
Diode peak reverse recovery current Irrm
Diode peak rate of fall of reverse
recoverycurrentduringtb
dirr/dt
Diode reverse recovery time
trr
Diode reverse recovery charge
Qrr
Diode peak reverse recovery current Irrm
Diode peak rate of fall of reverse
recoverycurrentduringtb
Tvj=25°C,
VR=400V,
IF=8.0A,
diF/dt=1000A/µs
Tvj=25°C,
VR=400V,
IF=8.0A,
diF/dt=200A/µs
dirr/dt
SwitchingCharacteristic,InductiveLoad
Parameter
Symbol Conditions
Value
Unit
min.
typ.
max.
-
81
-
ns
-
0.49
-
µC
-
10.5
-
A
-
-300
-
A/µs
-
110
-
ns
-
0.32
-
µC
-
4.7
-
A
-
-210
-
A/µs
DiodeCharacteristic,atTvj=175°C/125°C
Diode reverse recovery time
trr
Diode reverse recovery charge
Qrr
Diode peak reverse recovery current Irrm
Diode peak rate of fall of reverse
recoverycurrentduringtb
dirr/dt
Diode reverse recovery time
trr
Diode reverse recovery charge
Qrr
Diode peak reverse recovery current Irrm
Diode peak rate of fall of reverse
recoverycurrentduringtb
Tvj=175°C,
VR=400V,
IF=8.0A,
diF/dt=1000A/µs
Tvj=125°C,
VR=400V,
IF=8.0A,
diF/dt=200A/µs
dirr/dt
5
Rev.2.2,2013-12-16
IDP08E65D1
EmitterControlledDiodeRapid1Series
60
16.0
50
IF,FORWARDCURRENT[A]
Ptot,POWERDISSIPATION[W]
14.0
40
30
20
12.0
10.0
8.0
6.0
4.0
10
2.0
0
25
50
75
100
125
150
0.0
175
25
TC,CASETEMPERATURE[°C]
100
125
150
175
Figure 2. Diodeforwardcurrentasafunctionofcase
temperature
(Tvj≤175°C)
10
150
135
trr,REVERSERECOVERYTIME[ns]
Zth(j-c),TRANSIENTTHERMALRESISTANCE[K/W]
75
TC,CASETEMPERATURE[°C]
Figure 1. Powerdissipationasafunctionofcase
temperature
(Tvj≤175°C)
1
D=0.5
0.2
0.1
0.05
0.1
0.02
0.01
single pulse
1E-5
1E-4
0.001
0.01
0.1
Tj=25°C, IF = 8A
Tj=125°C, IF = 8A
Tj=175°C, IF = 8A
120
105
90
75
60
45
30
15
i:
1
2
3
4
5
6
ri[K/W]: 0.054405 0.4186 1.3026 0.83954 0.07293
2.1E-3
τi[s]:
1.3E-5
1.3E-4 6.5E-4 4.7E-3
0.05512947 2.016515
0.01
1E-6
50
0
200
1
tp,PULSEWIDTH[s]
600
1000
1400
1800
2200
2600
3000
diF/dt,DIODECURRENTSLOPE[A/µs]
Figure 3. Diodetransientthermalimpedanceasa
functionofpulsewidth
(D=tp/T)
Figure 4. Typicalreverserecoverytimeasafunctionof
diodecurrentslope
(VR=400V)
6
Rev.2.2,2013-12-16
IDP08E65D1
EmitterControlledDiodeRapid1Series
0.6
20
Tj=25°C, IF = 8A
Tj=125°C, IF = 8A
Tj=175°C, IF = 8A
18
Irrm,REVERSERECOVERYCURRENT[A]
Qrr,REVERSERECOVERYCHARGE[µC]
0.7
0.5
0.4
0.3
0.2
0.1
Tj=25°C, IF = 8A
Tj=125°C, IF = 8A
Tj=175°C, IF = 8A
16
14
12
10
8
6
4
2
0.0
200
600
1000
1400
1800
2200
2600
0
200
3000
diF/dt,DIODECURRENTSLOPE[A/µs]
600
1000
1400
1800
2200
2600
3000
diF/dt,DIODECURRENTSLOPE[A/µs]
Figure 5. Typicalreverserecoverychargeasafunction Figure 6. Typicalpeakreverserecoverycurrentasa
ofdiodecurrentslope
functionofdiodecurrentslope
(VR=400V)
(VR=400V)
0
16
Tj=25°C, IF = 8A
Tj=125°C, IF = 8A
Tj=175°C, IF = 8A
Tj=25°C
Tj=175°C
14
-400
IF,FORWARDCURRENT[A]
dIrr/dt,diodepeakrateoffallofIrr[A/µs]
-200
-600
-800
-1000
-1200
-1400
12
10
8
6
4
-1600
2
-1800
-2000
200
600
1000
1400
1800
2200
2600
0
0.00
3000
diF/dt,DIODECURRENTSLOPE[A/µs]
0.25
0.50
0.75
1.00
1.25
1.50
1.75
2.00
VF,FORWARDVOLTAGE[V]
Figure 7. Typicaldiodepeakrateoffallofreverse
recoverycurrentasafunctionofdiode
currentslope
(VR=400V)
Figure 8. Typicaldiodeforwardcurrentasafunctionof
forwardvoltage
7
Rev.2.2,2013-12-16
IDP08E65D1
EmitterControlledDiodeRapid1Series
2.00
IF=2A
IF=4A
IF=8A
IF=12A
IF=16A
VF,FORWARDVOLTAGE[V]
1.75
1.50
1.25
1.00
0.75
0.50
0
25
50
75
100
125
150
175
Tvj,JUNCTIONTEMPERATURE[°C]
Figure 9. Typicaldiodeforwardvoltageasafunctionof
junctiontemperature
8
Rev.2.2,2013-12-16
IDP08E65D1
EmitterControlledDiodeRapid1Series
PG-TO220-2-1
9
Rev.2.2,2013-12-16
IDP08E65D1
EmitterControlledDiodeRapid1Series
vGE(t)
90% VGE
a
a
10% VGE
b
b
t
iC(t)
90% IC
90% IC
10% IC
10% IC
t
vCE(t)
t
td(off)
tf
td(on)
t
tr
vGE(t)
90% VGE
10% VGE
t
iC(t)
CC
2% IC
t
vCE(t)
t2
E =
off
∫V
t
CE
t4
x IC x d t
E
1
t1
on
=
∫V
t
CE x IC x d t
2% VCE
3
t2
t3
t4
10
t
Rev.2.2,2013-12-16
IDP08E65D1
Emitter Controlled Diode Rapid 1 Series
Revision History
IDP08E65D1
Revision: 2013-12-16, Rev. 2.2
Previous Revision
Revision
Date
Subjects (major changes since last revision)
1.1
2013-03-13
Preliminary data sheet
2.1
2013-10-21
Final data sheet
2.2
2013-12-16
New Marking Pattern
We Listen to Your Comments
Any information within this document that you feel is wrong, unclear or missing at all ?
Your feedback will help us to continuously improve the quality of this document.
Please send your proposal (including a reference to this document) to: [email protected]
Published by
Infineon Technologies AG
81726 Munich, Germany
81726 München, Germany
© 2014 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics.
With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the
application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind,
including without limitation, warranties of non-infringement of intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon
Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances. For information on the types in
question, please contact the nearest Infineon Technologies Office.
The Infineon Technologies component described in this Data Sheet may be used in life-support devices or systems
and/or automotive, aviation and aerospace applications or systems only with the express written approval of Infineon
Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support,
automotive, aviation and aerospace device or system or to affect the safety or effectiveness of that device or system. Life
support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain
and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be
endangered.
11
Rev. 2.2, 2013-12-16