Diode RapidSwitchingEmitterControlledDiode IDW75D65D1 EmitterControlledDiodeRapid1DualAnodeSeries Datasheet IndustrialPowerControl IDW75D65D1 EmitterControlledDiodeRapid1DualAnodeSeries RapidSwitchingEmitterControlledDiode Features: A •QualifiedaccordingtoJEDECfortargetapplications •650VEmitterControlledtechnology •Temperaturestablebehaviourofkeyparameters •Lowforwardvoltage(VF) •Ultrafastrecovery •Lowreverserecoverycharge(Qrr) •Lowreverserecoverycurrent(Irrm) •175°Cjunctionoperatingtemperature •Pb-freeleadplating •RoHScompliant A C Applications: •AC/DCconverters •BoostdiodeinPFCstages •Freewheelingdiodesininvertersandmotordrives •Generalpurposeinverters •Switchmodepowersupplies 1 Packagepindefinition: 2 3 •Pin1-anode •Pin2andbackside-cathode •Pin3-anode Key Performance and Package Parameters Type IDW75D65D1 Vrrm If Vf, Tvj=25°C Tvjmax Marking Package 650V 75A 1.35V 175°C D75ED1 PG-TO247-3 2 Rev.2.1,2014-12-10 IDW75D65D1 EmitterControlledDiodeRapid1DualAnodeSeries Table of Contents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Thermal Resistances . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical Characteristics Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 3 Rev.2.1,2014-12-10 IDW75D65D1 EmitterControlledDiodeRapid1DualAnodeSeries Maximum Ratings For optimum lifetime and reliability, Infineon recommends operating conditions that do not exceed 80% of the maximum ratings stated in this datasheet. Parameter Symbol Repetitivepeakreversevoltage,Tvj≥25°C Diodeforwardcurrent,limitedbyTvjmax TC=25°C TC=100°C Value Unit 650 V IF 150.0 75.0 A IFpuls 225.0 A VRRM 1) Diodepulsedcurrent,tplimitedbyTvjmax 2) Diode surge non repetitive forward current TC=25°C,tp=10.0ms,sinehalfwave IFSM PowerdissipationTC=25°C PowerdissipationTC=100°C Ptot 326.0 163.0 W Operating junction temperature Tvj -40...+175 °C Storage temperature Tstg -55...+150 °C A 580.0 Soldering temperature, wave soldering 1.6mm (0.063in.) from case for 10s °C 260 Mounting torque, M3 screw Maximum of mounting processes: 3 M 0.6 Nm Thermal Resistances Parameter Characteristic Symbol Conditions Max. Value Unit Diode thermal resistance,3) junction - case Rth(j-c) 0.46 K/W Thermal resistance junction - ambient Rth(j-a) 40 K/W Electrical Characteristics, at Tvj = 25°C, unless otherwise specified Parameter Symbol Conditions Value min. typ. max. - 1.35 1.32 1.28 1.70 - - Unit Static Characteristic Diode forward voltage VF IF=75.0A Tvj=25°C Tvj=125°C Tvj=175°C Reverse leakage current IR VR=650V Tvj=25°C Tvj=175°C 1) 2) 3) 40.0 3000.0 - V µA Maximum current for pin 1 and pin 3 is 80A (value limited by bondwire). For a balanced current flow through pins 1 and 3. Pleasebeawarethatinnonstandardloadconditions,duetohighRth(j-c),TvjclosetoTvjmaxcanbereached. 4 Rev.2.1,2014-12-10 IDW75D65D1 EmitterControlledDiodeRapid1DualAnodeSeries Electrical Characteristic, at Tvj = 25°C, unless otherwise specified Parameter Symbol Conditions Value min. typ. max. - 7.0 - Unit Dynamic Characteristic Internal emitter inductance1) measured 5mm (0.197 in.) from case LE nH Switching Characteristics, Inductive Load Parameter Symbol Conditions Value Unit min. typ. max. Tvj=25°C, VR=400V, IF=75.0A, diF/dt=1000A/µs, Lσ=30nH, Cσ=40pF, switch IGZ100N65H5. - 108 - ns - 1.25 - µC - 19.9 - A - -1100 - A/µs Tvj=25°C, VR=400V, IF=40.0A, diF/dt=200A/µs, Lσ=30nH, Cσ=40pF, switch IGZ100N65H5. - 127 - ns - 0.48 - µC - 6.4 - A - -32 - A/µs Diode Characteristic, at Tvj = 25°C Diode reverse recovery time trr Diode reverse recovery charge Qrr Diode peak reverse recovery current Irrm Diode peak rate of fall of reverse recoverycurrentduringtb dirr/dt Diode reverse recovery time trr Diode reverse recovery charge Qrr Diode peak reverse recovery current Irrm Diode peak rate of fall of reverse recoverycurrentduringtb dirr/dt Switching Characteristics, Inductive Load Parameter Symbol Conditions Value Unit min. typ. max. - 174 - ns - 4.16 - µC - 37.9 - A - -1170 - A/µs Diode Characteristic, at Tvj = 175°C/125°C Diode reverse recovery time trr Diode reverse recovery charge Qrr Diode peak reverse recovery current Irrm Diode peak rate of fall of reverse recoverycurrentduringtb 1) dirr/dt Tvj=175°C, VR=400V, IF=75.0A, diF/dt=1000A/µs, Lσ=30nH, Cσ=40pF, switch IGZ100N65H5. For a balanced current flow through pins 1 and 3. 5 Rev.2.1,2014-12-10 IDW75D65D1 EmitterControlledDiodeRapid1DualAnodeSeries Diode reverse recovery time trr Diode reverse recovery charge Qrr Diode peak reverse recovery current Irrm Diode peak rate of fall of reverse recoverycurrentduringtb dirr/dt Tvj=125°C, VR=400V, IF=40.0A, diF/dt=200A/µs, Lσ=30nH, Cσ=40pF, switch IGZ100N65H5. 6 - 184 - ns - 1.64 - µC - 13.2 - A - -62 - A/µs Rev.2.1,2014-12-10 IDW75D65D1 EmitterControlledDiodeRapid1DualAnodeSeries 350 160 315 140 IC,COLLECTORCURRENT[A] Ptot,POWERDISSIPATION[W] 280 245 210 175 140 105 120 100 80 60 40 70 20 35 0 25 50 75 100 125 150 0 175 25 TC,CASETEMPERATURE[°C] 50 75 100 125 150 175 TC,CASETEMPERATURE[°C] Figure 1. Power dissipation as a function of case temperature (Tvj≤175°C) Figure 2. Collector current as a function of case temperature (VGE≥15V,Tvj≤175°C) Tvj=25°C,IF=75A Tvj=125°C,IF=75A Tvj=175°C,IF=75A 225 trr,REVERSERECOVERYTIME[ns] Zth(j-c),TRANSIENTTHERMALIMPEDANCE[K/W] 250 D = 0.5 0.2 0.1 0.05 0.1 0.02 0.01 single pulse 1E-5 1E-4 0.001 0.01 0.1 175 150 125 100 75 50 25 i: 1 2 3 4 5 6 7 ri[K/W]: 3.1E-4 0.01435 0.09435 0.09881 0.22828 0.01967 2.0E-3 τi[s]: 1.0E-5 3.0E-5 2.2E-4 2.2E-3 0.01247 0.10291 1.85641 0.01 1E-6 200 0 200 1 tp,PULSEWIDTH[s] 600 1000 1400 1800 2200 2600 3000 dIF/dt,DIODECURRENTSLOPE[A/µs] Figure 3. Diode transient thermal impedance as a function of pulse width (D=tp/T) Figure 4. Typical reverse recovery time as a function of diode current slope (VR=400V) 7 Rev.2.1,2014-12-10 IDW75D65D1 EmitterControlledDiodeRapid1DualAnodeSeries 6.0 60 5.0 Irr,REVERSERECOVERYCURRENT[A] Qrr,REVERSERECOVERYCHARGE[µC] 5.5 70 Tvj=25°C,IF=75A Tvj=125°C,IF=75A Tvj=175°C,IF=75A 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 Tvj=25°C,IF=75A Tvj=125°C,IF=75A Tvj=175°C,IF=75A 50 40 30 20 10 0.5 0.0 200 600 1000 1400 1800 2200 2600 0 200 3000 dIF/dt,DIODECURRENTSLOPE[A/µs] 600 1000 1400 1800 2200 2600 3000 dIF/dt,DIODECURRENTSLOPE[A/µs] Figure 5. Typical reverse recovery charge as a function Figure 6. Typical reverse recovery current as a of diode current slope function of diode current slope (VR=400V) (VR=400V) 150 Tvj=25°C,IF=75A Tvj=125°C,IF=75A Tvj=175°C,IF=75A -250 135 -500 -750 -1000 -1250 -1500 -1750 105 90 75 60 45 -2000 30 -2250 15 -2500 200 Tvj=25°C Tvj=175°C 120 IF,FORWARDCURRENT[A] dIrr/dt,DIODEPEAKRATEOFFALLOFIrr[A/µs] 0 600 1000 1400 1800 2200 2600 0 0.00 3000 dIF/dt,DIODECURRENTSLOPE[A/µs] 0.25 0.50 0.75 1.00 1.25 1.50 1.75 2.00 VF,FORWARDVOLTAGE[V] Figure 7. Typical diode peak rate of fall of reverse recovery current as a function of diode current slope (VR=400V) Figure 8. Typical diode forward current as a function of forward voltage 8 Rev.2.1,2014-12-10 IDW75D65D1 EmitterControlledDiodeRapid1DualAnodeSeries 1.75 IF=20A IF=37.5A IF=75A VF,FORWARDVOLTAGE[V] 1.50 1.25 1.00 0.75 0.50 25 50 75 100 125 150 175 Tvj,JUNCTIONTEMPERATURE[°C] Figure 9. Typical diode forward voltage as a function of junction temperature 9 Rev.2.1,2014-12-10 IDW75D65D1 EmitterControlledDiodeRapid1DualAnodeSeries PG-TO247-3 10 Rev.2.1,2014-12-10 IDW75D65D1 EmitterControlledDiodeRapid1DualAnodeSeries VGE(t) I,V 90% VGE t rr = t a + t b Q rr = Q a + Q b dIF/dt a 10% VGE b t Qa IC(t) Qb dI 90% IC 90% IC 10% IC 10% IC Figure C. Definition of diode switching characteristics t VCE(t) t td(off) tf td(on) t tr Figure A. VGE(t) 90% VGE Figure D. 10% VGE t IC(t) CC 2% IC t Figure E. Dynamic test circuit Parasitic inductance Ls, parasitic capacitor Cs, relief capacitor Cr, (only for ZVT switching) VCE(t) t2 E off = t4 VCE x IC x dt E t1 t1 on = VCE x IC x d t 2% VCE t3 t2 t3 t4 t Figure B. 11 Rev.2.1,2014-12-10 IDW75D65D1 Emitter Controlled Diode Rapid 1 Dual Anode Series Revision History IDW75D65D1 Revision: 2014-12-10, Rev. 2.1 Previous Revision Revision Date Subjects (major changes since last revision) 1.1 2014-12-02 Preliminaryt data sheet 2.1 2014-12-10 Final data sheet We Listen to Your Comments Any information within this document that you feel is wrong, unclear or missing at all? Your feedback will help us to continuously improve the quality of this document. Please send your proposal (including a reference to this document) to: [email protected] Published by Infineon Technologies AG 81726 Munich, Germany 81726 München, Germany © 2014 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. The Infineon Technologies component described in this Data Sheet may be used in life-support devices or systems and/or automotive, aviation and aerospace applications or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support, automotive, aviation and aerospace device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 12 Rev. 2.1, 2014-12-10