IDW75D65D1 Data Sheet (1.6 MB, EN)

Diode
RapidSwitchingEmitterControlledDiode
IDW75D65D1
EmitterControlledDiodeRapid1DualAnodeSeries
Datasheet
IndustrialPowerControl
IDW75D65D1
EmitterControlledDiodeRapid1DualAnodeSeries
RapidSwitchingEmitterControlledDiode
Features:
A
•QualifiedaccordingtoJEDECfortargetapplications
•650VEmitterControlledtechnology
•Temperaturestablebehaviourofkeyparameters
•Lowforwardvoltage(VF)
•Ultrafastrecovery
•Lowreverserecoverycharge(Qrr)
•Lowreverserecoverycurrent(Irrm)
•175°Cjunctionoperatingtemperature
•Pb-freeleadplating
•RoHScompliant
A
C
Applications:
•AC/DCconverters
•BoostdiodeinPFCstages
•Freewheelingdiodesininvertersandmotordrives
•Generalpurposeinverters
•Switchmodepowersupplies
1
Packagepindefinition:
2
3
•Pin1-anode
•Pin2andbackside-cathode
•Pin3-anode
Key Performance and Package Parameters
Type
IDW75D65D1
Vrrm
If
Vf, Tvj=25°C
Tvjmax
Marking
Package
650V
75A
1.35V
175°C
D75ED1
PG-TO247-3
2
Rev.2.1,2014-12-10
IDW75D65D1
EmitterControlledDiodeRapid1DualAnodeSeries
Table of Contents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Thermal Resistances . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical Characteristics Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
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Rev.2.1,2014-12-10
IDW75D65D1
EmitterControlledDiodeRapid1DualAnodeSeries
Maximum Ratings
For optimum lifetime and reliability, Infineon recommends operating conditions that do not exceed 80% of the maximum ratings stated in this datasheet.
Parameter
Symbol
Repetitivepeakreversevoltage,Tvj≥25°C
Diodeforwardcurrent,limitedbyTvjmax
TC=25°C
TC=100°C
Value
Unit
650
V
IF
150.0
75.0
A
IFpuls
225.0
A
VRRM
1)
Diodepulsedcurrent,tplimitedbyTvjmax
2)
Diode surge non repetitive forward current
TC=25°C,tp=10.0ms,sinehalfwave
IFSM
PowerdissipationTC=25°C
PowerdissipationTC=100°C
Ptot
326.0
163.0
W
Operating junction temperature
Tvj
-40...+175
°C
Storage temperature
Tstg
-55...+150
°C
A
580.0
Soldering temperature,
wave soldering 1.6mm (0.063in.) from case for 10s
°C
260
Mounting torque, M3 screw
Maximum of mounting processes: 3
M
0.6
Nm
Thermal Resistances
Parameter
Characteristic
Symbol Conditions
Max. Value
Unit
Diode thermal resistance,3)
junction - case
Rth(j-c)
0.46
K/W
Thermal resistance
junction - ambient
Rth(j-a)
40
K/W
Electrical Characteristics, at Tvj = 25°C, unless otherwise specified
Parameter
Symbol Conditions
Value
min.
typ.
max.
-
1.35
1.32
1.28
1.70
-
-
Unit
Static Characteristic
Diode forward voltage
VF
IF=75.0A
Tvj=25°C
Tvj=125°C
Tvj=175°C
Reverse leakage current
IR
VR=650V
Tvj=25°C
Tvj=175°C
1)
2)
3)
40.0
3000.0
-
V
µA
Maximum current for pin 1 and pin 3 is 80A (value limited by bondwire).
For a balanced current flow through pins 1 and 3.
Pleasebeawarethatinnonstandardloadconditions,duetohighRth(j-c),TvjclosetoTvjmaxcanbereached.
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IDW75D65D1
EmitterControlledDiodeRapid1DualAnodeSeries
Electrical Characteristic, at Tvj = 25°C, unless otherwise specified
Parameter
Symbol Conditions
Value
min.
typ.
max.
-
7.0
-
Unit
Dynamic Characteristic
Internal emitter inductance1)
measured 5mm (0.197 in.) from
case
LE
nH
Switching Characteristics, Inductive Load
Parameter
Symbol Conditions
Value
Unit
min.
typ.
max.
Tvj=25°C,
VR=400V,
IF=75.0A,
diF/dt=1000A/µs,
Lσ=30nH,
Cσ=40pF,
switch IGZ100N65H5.
-
108
-
ns
-
1.25
-
µC
-
19.9
-
A
-
-1100
-
A/µs
Tvj=25°C,
VR=400V,
IF=40.0A,
diF/dt=200A/µs,
Lσ=30nH,
Cσ=40pF,
switch IGZ100N65H5.
-
127
-
ns
-
0.48
-
µC
-
6.4
-
A
-
-32
-
A/µs
Diode Characteristic, at Tvj = 25°C
Diode reverse recovery time
trr
Diode reverse recovery charge
Qrr
Diode peak reverse recovery current Irrm
Diode peak rate of fall of reverse
recoverycurrentduringtb
dirr/dt
Diode reverse recovery time
trr
Diode reverse recovery charge
Qrr
Diode peak reverse recovery current Irrm
Diode peak rate of fall of reverse
recoverycurrentduringtb
dirr/dt
Switching Characteristics, Inductive Load
Parameter
Symbol Conditions
Value
Unit
min.
typ.
max.
-
174
-
ns
-
4.16
-
µC
-
37.9
-
A
-
-1170
-
A/µs
Diode Characteristic, at Tvj = 175°C/125°C
Diode reverse recovery time
trr
Diode reverse recovery charge
Qrr
Diode peak reverse recovery current Irrm
Diode peak rate of fall of reverse
recoverycurrentduringtb
1)
dirr/dt
Tvj=175°C,
VR=400V,
IF=75.0A,
diF/dt=1000A/µs,
Lσ=30nH,
Cσ=40pF,
switch IGZ100N65H5.
For a balanced current flow through pins 1 and 3.
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IDW75D65D1
EmitterControlledDiodeRapid1DualAnodeSeries
Diode reverse recovery time
trr
Diode reverse recovery charge
Qrr
Diode peak reverse recovery current Irrm
Diode peak rate of fall of reverse
recoverycurrentduringtb
dirr/dt
Tvj=125°C,
VR=400V,
IF=40.0A,
diF/dt=200A/µs,
Lσ=30nH,
Cσ=40pF,
switch IGZ100N65H5.
6
-
184
-
ns
-
1.64
-
µC
-
13.2
-
A
-
-62
-
A/µs
Rev.2.1,2014-12-10
IDW75D65D1
EmitterControlledDiodeRapid1DualAnodeSeries
350
160
315
140
IC,COLLECTORCURRENT[A]
Ptot,POWERDISSIPATION[W]
280
245
210
175
140
105
120
100
80
60
40
70
20
35
0
25
50
75
100
125
150
0
175
25
TC,CASETEMPERATURE[°C]
50
75
100
125
150
175
TC,CASETEMPERATURE[°C]
Figure 1. Power dissipation as a function of case
temperature
(Tvj≤175°C)
Figure 2. Collector current as a function of case
temperature
(VGE≥15V,Tvj≤175°C)
Tvj=25°C,IF=75A
Tvj=125°C,IF=75A
Tvj=175°C,IF=75A
225
trr,REVERSERECOVERYTIME[ns]
Zth(j-c),TRANSIENTTHERMALIMPEDANCE[K/W]
250
D = 0.5
0.2
0.1
0.05
0.1
0.02
0.01
single pulse
1E-5
1E-4
0.001
0.01
0.1
175
150
125
100
75
50
25
i:
1
2
3
4
5
6
7
ri[K/W]: 3.1E-4 0.01435 0.09435 0.09881 0.22828 0.01967 2.0E-3
τi[s]:
1.0E-5 3.0E-5
2.2E-4
2.2E-3
0.01247 0.10291 1.85641
0.01
1E-6
200
0
200
1
tp,PULSEWIDTH[s]
600
1000
1400
1800
2200
2600
3000
dIF/dt,DIODECURRENTSLOPE[A/µs]
Figure 3. Diode transient thermal impedance as a
function of pulse width
(D=tp/T)
Figure 4. Typical reverse recovery time as a function of
diode current slope
(VR=400V)
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Rev.2.1,2014-12-10
IDW75D65D1
EmitterControlledDiodeRapid1DualAnodeSeries
6.0
60
5.0
Irr,REVERSERECOVERYCURRENT[A]
Qrr,REVERSERECOVERYCHARGE[µC]
5.5
70
Tvj=25°C,IF=75A
Tvj=125°C,IF=75A
Tvj=175°C,IF=75A
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
Tvj=25°C,IF=75A
Tvj=125°C,IF=75A
Tvj=175°C,IF=75A
50
40
30
20
10
0.5
0.0
200
600
1000
1400
1800
2200
2600
0
200
3000
dIF/dt,DIODECURRENTSLOPE[A/µs]
600
1000
1400
1800
2200
2600
3000
dIF/dt,DIODECURRENTSLOPE[A/µs]
Figure 5. Typical reverse recovery charge as a function Figure 6. Typical reverse recovery current as a
of diode current slope
function of diode current slope
(VR=400V)
(VR=400V)
150
Tvj=25°C,IF=75A
Tvj=125°C,IF=75A
Tvj=175°C,IF=75A
-250
135
-500
-750
-1000
-1250
-1500
-1750
105
90
75
60
45
-2000
30
-2250
15
-2500
200
Tvj=25°C
Tvj=175°C
120
IF,FORWARDCURRENT[A]
dIrr/dt,DIODEPEAKRATEOFFALLOFIrr[A/µs]
0
600
1000
1400
1800
2200
2600
0
0.00
3000
dIF/dt,DIODECURRENTSLOPE[A/µs]
0.25
0.50
0.75
1.00
1.25
1.50
1.75
2.00
VF,FORWARDVOLTAGE[V]
Figure 7. Typical diode peak rate of fall of reverse
recovery current as a function of diode
current slope
(VR=400V)
Figure 8. Typical diode forward current as a function of
forward voltage
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Rev.2.1,2014-12-10
IDW75D65D1
EmitterControlledDiodeRapid1DualAnodeSeries
1.75
IF=20A
IF=37.5A
IF=75A
VF,FORWARDVOLTAGE[V]
1.50
1.25
1.00
0.75
0.50
25
50
75
100
125
150
175
Tvj,JUNCTIONTEMPERATURE[°C]
Figure 9. Typical diode forward voltage as a function of
junction temperature
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Rev.2.1,2014-12-10
IDW75D65D1
EmitterControlledDiodeRapid1DualAnodeSeries
PG-TO247-3
10
Rev.2.1,2014-12-10
IDW75D65D1
EmitterControlledDiodeRapid1DualAnodeSeries
VGE(t)
I,V
90% VGE
t rr = t a + t b
Q rr = Q a + Q b
dIF/dt
a
10% VGE
b
t
Qa
IC(t)
Qb
dI
90% IC
90% IC
10% IC
10% IC
Figure C. Definition of diode switching
characteristics
t
VCE(t)
t
td(off)
tf
td(on)
t
tr
Figure A.
VGE(t)
90% VGE
Figure D.
10% VGE
t
IC(t)
CC
2% IC
t
Figure E. Dynamic test circuit
Parasitic inductance Ls,
parasitic capacitor Cs,
relief capacitor Cr,
(only for ZVT switching)
VCE(t)
t2
E
off
=
t4
VCE x IC x dt
E
t1
t1
on
=
VCE x IC x d t
2% VCE
t3
t2
t3
t4
t
Figure B.
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Rev.2.1,2014-12-10
IDW75D65D1
Emitter Controlled Diode Rapid 1 Dual Anode Series
Revision History
IDW75D65D1
Revision: 2014-12-10, Rev. 2.1
Previous Revision
Revision
Date
Subjects (major changes since last revision)
1.1
2014-12-02
Preliminaryt data sheet
2.1
2014-12-10
Final data sheet
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Published by
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81726 München, Germany
© 2014 Infineon Technologies AG
All Rights Reserved.
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For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon
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Warnings
Due to technical requirements, components may contain dangerous substances. For information on the types in
question, please contact the nearest Infineon Technologies Office.
The Infineon Technologies component described in this Data Sheet may be used in life-support devices or systems
and/or automotive, aviation and aerospace applications or systems only with the express written approval of Infineon
Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support,
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endangered.
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Rev. 2.1, 2014-12-10