A Product Line of Diodes Incorporated ZXGD3005E6 ADVANCE INFORMATION 25V 10A GATE DRIVER IN SOT26 Description and Applications Features and Benefits The ZXGD3005E6 is a high-speed non-inverting single gate driver capable of driving up to 10A into a MOSFET or IGBT gate capacitive load from supply voltages up to 25V. With propagation delay times down to <10ns and correspondingly rise/fall times of <20ns. • • • • • • This gate driver ensures rapid switching of the MOSFET or IGBT to minimize power losses and distortion in high current switching applications. It is ideally suited to act as a voltage buffer between the typically high output impedances of a controller IC and the effectively low impedance on the gate of a power MOSFET or IGBT during switching. Its low input voltage requirement and high current gain allows high current driving from low voltage controller ICs. • • • • • • The ZXGD3005E6 has separate source and sink outputs that enables the turn-on and turn-off times of the MOSFET or IGBT to be independently controlled. In addition, the wide supply voltage range allows full enhancement of the MOSFET or IGBT to minimize on-state losses and permits +15V to -5V gate drive voltage to prevent dV/dt induced false triggering of IGBTs. The ZXGD3005E6 has been designed to be inherently rugged to latch-up and shoot-through issues. The optimized pin-out SOT26 package eases board layout, enabling reduced parasitic inductance of traces. Mechanical Data • • • • • • Power MOSFET and IGBT Gate Driving in: • Synchronous switch-mode power supplies • Power Factor Correction (PFC) in power supplies • Secondary side synchronous rectification • Plasma Display Panel power modules • 1, 2 and 3-phase motor control circuits • Audio switching amplifier power output stages • Solar inverters SOT26 VCC Case: SOT26 Case material: Molded Plastic. “Green” Molding Compound. UL Flammability Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Matte Tin Finish Weight: 0.018 grams (approximate) Source Do Not Connect IN 1 Emitter-follower configuration for ultra-fast switching • <10ns propagation delay time • <20ns rise/fall time Non-inverting voltage buffer stage Wide supply voltage up to 25V to minimize on-losses 10A peak current drive into capacitive loads Low input current of 1mA to deliver 4A output current Separate source and sink outputs for independent control of rise and fall time Optimized pin-out to ease board layout and minimize parasitic inductance of traces Rugged design that avoids latch-up or shoot-through issues Near - Zero quiescent supply current “Lead-Free”, RoHS Compliant (Note 1) “Green” Devices (Note 2) Qualified to AEC-Q101 Standards for High Reliability Sink VEE Top View Pin-Out Top View Pin Name Pin Function VCC Supply voltage high IN Driver input pin VEE Supply voltage low SOURCE Source current output SINK Sink current output Ordering Information (Note 3) Product ZXGD3005E6TA Notes: Marking 3005 Reel size (inches) 7 Tape width (mm) 8 Quantity per reel 3000 1. No purposefully added lead 2. “Green” devices, Halogen and Antimony Free, Diodes Inc’s “Green” Policy can be found on our website at http://www.diodes.com 3. For packaging details, go to our website at http://www.diodes.com Marking Information 3005 ZXGD3005E6 Document Number DS35095 Rev. 4 – 2 3005 = Product Type Marking Code 1 of 8 www.diodes.com March 2011 © Diodes Incorporated A Product Line of Diodes Incorporated Typical Application Circuit VS VCC VCC Controller IC ADVANCE INFORMATION ZXGD3005E6 SOURCE RSOURCE IN ZXGD3005 SINK RSINK VEE Maximum Ratings @TA = 25°C unless otherwise specified Characteristic Supply voltage, with respect to VEE Input voltage, with respect to VEE Output difference voltage (Source – Sink) Peak output current Input current Symbol VCC VIN ΔV(source-sink) IPK IIN Value 25 25 ±7.5 ±10 ±100 Unit V V V A mA Value 1.1 8.8 113 105 -55 to +150 Unit W mW/°C Thermal Characteristics @TA = 25°C unless otherwise specified Characteristic Power Dissipation (Notes 4 & 5) Linear derating factor Thermal Resistance, Junction to Ambient (Notes 4 & 5) Thermal Resistance, Junction to Lead (Note 6) Operating and Storage Temperature Range Notes: Symbol PD RθJA RθJL TJ, TSTG °C/W °C 4. For a device surface mounted on 25mm x 25mm x 0.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions; the device is measured when operating in a steady-state condition. The heatsink is split in half with the pin 1 (VCC) and pin 3 (VEE) connected separately to each half. 5. For device with two active die running at equal power. 6. Thermal resistance from junction to solder-point at the end of each lead on pin 1 (VCC) and pin 3 (VEE). ZXGD3005E6 Document Number DS35095 Rev. 4 – 2 2 of 8 www.diodes.com March 2011 © Diodes Incorporated A Product Line of Diodes Incorporated ZXGD3005E6 ADVANCE INFORMATION Electrical Characteristics @TA = 25°C unless otherwise specified Characteristic Output voltage, high Output voltage, low Symbol VOH VOL Supply breakdown voltage BVCC Quiescent supply current IQ Source current Sink current I(source) I(sink) Source current with varying input resistances Min 25 25 - Typ VCC - 0.8 VEE + 0.2 4.0 3.8 Max VEE + 0.5 50 50 - Unit - 6.4 5.5 3.9 2.2 0.44 - A - 7.7 6.5 4.4 2.3 0.46 - A - 8 48 16 35 - ns - 46 419 47 467 - ns I(source) Sink current with varying input resistances I(sink) Switching times with low load capacitance CL = 10nF td(rise) tr td(fall) tf Switching times with high load capacitance CL = 100nF td(rise) tr td(fall) tf Switching times with asymmetric source and sink resistors td(rise) tr td(fall) tf 24 133 16 37 V V nA A ns Test Condition VIN = VCC VIN = VEE IQ = 100μA, VIN = VCC IQ = 100μA, VIN = VEE = 0V VCC= 20V,VIN = VCC VCC= 20V,VIN = VEE = 0V VCC= 5V, IIN= 1mA, VOUT= 0V VCC= 5V, IIN=-1mA, VOUT= 5V RIN = 200Ω VCC = 15V, VEE = 0V RIN = 1kΩ VIN = 15V RIN = 10kΩ CL = 100nF, RL = 0.18Ω RIN = 100kΩ RSOURCE = 0Ω, RSINK = 0Ω RIN = 1000kΩ RIN = 200Ω VCC = 15V, VEE = 0V RIN = 1kΩ VIN = 15V RIN = 10kΩ CL = 100nF, RL = 0.18Ω RIN = 100kΩ RSOURCE = 0Ω, RSINK = 0Ω RIN = 1000kΩ VCC = 15V, VEE = 0V VIN = 0 to 15V RIN = 1kΩ CL = 10nF, RL = 0.18Ω RSOURCE = 0Ω, RSINK = 0Ω VCC = 15V, VEE = 0V VIN = 0 to 15V RIN = 1kΩ CL = 100nF, RL = 0.18Ω RSOURCE = 0Ω, RSINK = 0Ω VCC = 15V, VEE = -5V VIN = -5 to 15V RIN= 1kΩ CL = 10nF, RL = 0.18Ω RSOURCE=4.7Ω, RSINK=0Ω Switching Test Circuit and Timing Diagram VCC 90% VCC VIN RIN 50Ω SOURCE IN ZXGD3005 V RSOURCE 10% SINK td(fall) td(rise) RSINK 50Ω VIN VOUT CL 90% VEE RL 90% VOUT 10% 10% tr ZXGD3005E6 Document Number DS35095 Rev. 4 – 2 3 of 8 www.diodes.com tf March 2011 © Diodes Incorporated A Product Line of Diodes Incorporated Typical Switching Characteristics @TA = 25°C unless otherwise specified VIN = 0 to 15V 15 VIN = 0 to 15V 15 VCC= 15V VCC= 15V VEE= 0V RIN = 1kΩ 10 CL = 10nF RL = 0.18Ω VOUT RSOURCE= 0Ω 5 RSINK = 0Ω VIN Voltage (V) Voltage (V) VEE= 0V RIN = 1kΩ 10 CL = 100nF RL = 0.18Ω VOUT RSOURCE= 0Ω 5 RSINK = 0Ω VIN 0 0 0 0.0 100 200 300 400 500 600 700 800 0.5 1.0 1.5 2.0 2.5 3.0 3.5 Time (μs) Time (ns) Switching Speed Switching Speed High Load Capacitance CL = 100nF Low Load Capacitance CL = 10nF 10 VIN = -5 to 15V VCC= 15V VEE= -5V 10 VOUT 5 RIN = 1kΩ CL = 10nF RL = 0.18Ω RSOURCE= 4.7Ω RSINK = 0Ω VIN 0 -5 VIN = 0 to 15V Supply Current (A) 15 Voltage (V) ADVANCE INFORMATION ZXGD3005E6 1 CL= 100nF VCC= 15V VEE= 0V 0.1 0.01 Square Wave CL= 1μF CL= 1nF 1E-3 CL= 10nF 1E-4 0 100 200 300 400 500 600 700 800 10 100 1k 10k 100k Time (ns) Frequency (Hz) Switching Speed Supply Current 1M Asymmetric Source and Sink Resistors ZXGD3005E6 Document Number DS35095 Rev. 4 – 2 4 of 8 www.diodes.com March 2011 © Diodes Incorporated A Product Line of Diodes Incorporated Typical Switching Characteristics @TA = 25°C unless otherwise specified 10 Peak Sink Current (A) Peak Source Current (A) 10 CL=1uF 1 CL=100nF VIN = 15V 0.1 CL=10nF VCC= 15V VEE= 0V RL = 0.18Ω CL=1nF 0.01 1k 10k 100k 1M CL=1uF 1 CL=100nF VIN = 15V 0.1 VEE= 0V RL = 0.18Ω 10M 1k 100k 1M 10M Sink Current vs. Input Resistance RIN=1MΩ RIN=1MΩ 1000 RIN=100kΩ td(fall) (ns) td(rise) (ns) 10k RIN Input Resistance (Ω) 100 RIN=100kΩ 100 10 RIN=200Ω 1 CL=1nF 0.01 RIN Input Resistance (Ω) 1000 CL=10nF VCC= 15V Source Current vs. Input Resistance 1 RIN=1kΩ RIN=10kΩ V == 15V VIN 15V IN V VCC== 15V 15V VIN = 15V 10 CC V == 0V VEE 0V EE R RL == 0.18 0.18Ω Ω RIN=200Ω L 10 100 1 1k 1 CL Load Capacitance (nF) 10000 RIN=100kΩ 1000 RIN=10kΩ 100 VIN = 15V RIN=200Ω 10 1 tf (ns) 1000 10 RIN=1kΩ VCC= 15V RIN=10kΩ VEE= 0V RL = 0.18Ω 10 100 1k Turn-Off Delay Time RIN=1MΩ 10000 RIN=1kΩ CL Load Capacitance (nF) Turn-On Delay Time tr (ns) ADVANCE INFORMATION ZXGD3005E6 RIN=1MΩ RIN=100kΩ 100 RIN=10kΩ VIN = 15V VCC= 15V RIN=1kΩ VEE= 0V 10 RL = 0.18Ω 100 1k 1 RIN=200Ω 10 VCC= 15V VEE= 0V RL = 0.18Ω 100 CL Load Capacitance (nF) CL Load Capacitance (nF) Turn-On Rise Time Turn-Off Fall Time ZXGD3005E6 Document Number DS35095 Rev. 4 – 2 5 of 8 www.diodes.com 1k March 2011 © Diodes Incorporated A Product Line of Diodes Incorporated Application Notes Independent control of rise and fall time An application may require the turn-on (ton) and turn-off (toff) time to be independently controlled, which can be achieved by setting different RSOURCE and RSINK values. With asymmetric RSOURCE and RSINK resistors, then a potential difference will occur between the SOURCE and SINK pins during the switching transition. If the potential difference across the SOURCE and SINK pins is greater than 7.5V, then it could damage the ZXGD3005. In this circuit example of driving an IGBT, a blocking diode is added in series with RSINK to protect against excess reverse current being induced into the SINK pin. Circuit example of driving a MOSFET Circuit example of driving an IGBT Application example of gate driving a MOSFET from 0 to 15V with RSOURCE = RSINK = 0Ω Application example of gate driving an IGBT with independent ton and toff using asymmetric RSOURCE and RSINK In addition, the gate is driven from -5 to +15V to prevent dV/dt induced false triggering. Switching Time Characteristic Switching Time Characteristic VIN = 0 to 15V 15 VCC= 15V 10 CL = 10nF RL = 0.18Ω VOUT RSOURCE= 0Ω 5 RSINK = 0Ω VIN Voltage (V) RIN = 1kΩ VIN = -5 to 15V 15 VCC= 15V VEE= 0V Voltage (V) ADVANCE INFORMATION ZXGD3005E6 0 VEE= -5V 10 VOUT 5 RIN = 1kΩ CL = 10nF RL = 0.18Ω RSOURCE= 4.7Ω VIN 0 RSINK = 0Ω -5 0 0 100 200 300 400 500 600 700 800 Symmetric Source and Sink Resistors ZXGD3005E6 Document Number DS35095 Rev. 4 – 2 100 200 300 400 500 600 700 800 Time (ns) Asymmetric Source and Sink Resistors Time (ns) 6 of 8 www.diodes.com March 2011 © Diodes Incorporated A Product Line of Diodes Incorporated ADVANCE INFORMATION ZXGD3005E6 Package Outline Dimensions A B C H K M J L D SOT26 Dim Min Max Typ A 0.35 0.50 0.38 B 1.50 1.70 1.60 C 2.70 3.00 2.80 D ⎯ ⎯ 0.95 H 2.90 3.10 3.00 J 0.013 0.10 0.05 K 1.00 1.30 1.10 L 0.35 0.55 0.40 M 0.10 0.20 0.15 0° 8° α ⎯ All Dimensions in mm Suggested Pad Layout C2 Z C2 C1 G Y Dimensions Value (in mm) Z 3.20 G 1.60 X 0.55 Y 0.80 C1 2.40 C2 0.95 X ZXGD3005E6 Document Number DS35095 Rev. 4 – 2 7 of 8 www.diodes.com March 2011 © Diodes Incorporated A Product Line of Diodes Incorporated ADVANCE INFORMATION ZXGD3005E6 IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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