PANASONIC 2SK0065

Silicon Junction FETs (Small Signal)
2SK0065 (2SK65)
Silicon N-Channel Junction FET
For impedance conversion in low frequency
For electret capacitor microphone
unit: mm
4.0±0.2
(0.8)
3.0±0.2
2.0±0.2
● Diode is connected between gate and source
● Low noise voltage
7.6
■ Features
15.6±0.5
(0.8)
0.75 max.
■ Absolute Maximum Ratings (Ta = 25°C)
Ratings
Unit
Drain to Source voltage
Parameter
VDSO
Symbol
12
V
Gate to Drain voltage
VGDO
−12
V
Drain to Source current
IDSO
2
mA
Drain to Gate current
IDGO
2
mA
Gate to Source current
IGSO
2
mA
Allowable power dissipation
PD
20
mW
Operating ambient temperature
Topr
−10 to +70
°C
Storage temperature
Tstg
−20 to +150
°C
0.45+0.20
–0.10
0.45+0.20
–0.10
(2.5) (2.5)
0.7±0.1
1
2
1: Drain
2: Gate
3: Source
NS-B1 Package
3
■ Electrical Characteristics (Ta = 25°C)
Parameter
Symbol
Drain to Source cut-off current
IDSS*
Mutual conductance
gm
Noise figure
NV
RS = 2.2kΩ ± 1%, f = 1kHz
300
typ
CG = 10pF, eG = 100mV, f = 70Hz
VDS = 12V, RS = 2.2kΩ ± 1%
GV2*
CG = 10pF, eG = 100mV, f = 70Hz
VDS = 1V, RS = 2.2kΩ ± 1%
CG = 10pF, eG = 100mV, f = 70Hz
Unit
0.8
mA
µS
4
CG = 10pF, A-curve
VDS = 4.5V, RS = 2.2kΩ ± 1%
max
500
VDS = 4.5V, RS = 2.2kΩ ± 1%
GV3*
*
min
0.04
VDS = 4.5V, VGS = 0
GV1*
Voltage gain
Conditions
VDS = 4.5V, VGS = 0, RS = 2.2kΩ ± 1%
µV
−10
dB
−9.5
dB
−11
dB
IDSS rank classification and GV value
Runk
P
Q
IDSS (mA)
0.04 to 0.2
0.15 to 0.8
GV1 (dB)
> −13
> −12
GV2 (dB)
> −12
> −11
∆| GV1 − GV2 | (dB)
<3
<3
Note) The part number in the parenthesis shows conventional part number.
241
Silicon Junction FETs (Small Signal)
PD  Ta
ID  VDS
24
ID  VGS
800
1.2
VDS=4.5V
Allowable power dissipation PD (mW)
Ta=25˚C
700
16
12
Topr max.
8
4
600
VGS=0V
500
– 0.1V
400
– 0.2V
300
– 0.3V
200
40
60
80 100 120 140 160
0
Ambient temperature Ta (˚C)
2
4
IDSS=0.9mA
Mutual conductance gm (mS)
1.0
0.8
0.6
0.3mA
0.4
0.1mA
0.2
0
–1.0
VDS=4.5V
f=1kHz
Ta=25˚C
1.0
– 0.6
– 0.4
– 0.2
0.4
10kHz
8
0.4
0.6
0.8
1.0
Drain current ID (mA)
12
10
8
Rg=10kΩ
6
4
100kΩ
2
1000kΩ
0.3
1
3
10
30
100
Signal source resistance Rg (kΩ)
242
1kHz
8
0
0.01 0.03
0.1
0.3
1
3
Frequency f (KHz)
0
0.2
0.4
0.6
0.8
Drain current ID (mA)
VDS=4.5V
ID=300µA
Ta=25˚C
4
0
0.1
f=100Hz
12
0
0.2
14
1kHz
16
4
NF  f
f=100Hz
0
10kHz
0.2
16
16
– 0.4
VDS=4.5V
Rg=100kW
Ta=25˚C
20
0.1mA
0
Noise figure NF (dB)
Noise figure NF (dB)
20
– 0.8
IDSS=0.9mA
0.6
0
VDS=4.5V
ID=300µA
Ta=25˚C
–1.2
NF  ID
0.3mA
NF  Rg
24
–1.6
Gate to source voltage VGS (V)
24
0
– 0.8
0.4
0
–2.0
12
0.8
Gate to source voltage VGS (V)
12
10
25˚C
gm  ID
1.2
VDS=4.5V
f=1kHz
Ta=25˚C
8
Ta=–25˚C
Drain to source voltage VDS (V)
gm  VGS
1.2
6
0.6
0.2
– 0.5V
– 0.6V
– 0.7V
Noise figure NF (dB)
20
0.8
75˚C
– 0.4V
100
0
0
Drain current ID (mA)
1.0
Drain current ID (µA)
20
0
Mutual conductance gm (mS)
2SK0065
10
1.0
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2001 MAR