SD103AW-V, SD103BW-V, SD103CW-V Vishay Semiconductors Small Signal Schottky Diodes Features • The low forward voltage drop and fast switching make it ideal for protection of MOS devices, steering, biasing, and coupling diodes for fast switching and low logic level applications. • Other applications are click suppression, efficient full wave bridges in telephone subsets, and blocking diodes in rechargeable low voltage battery systems. • The SD103 series is a metal-on-silicon Schottky barrier device which is protected by a PN junction guard ring. • This diode is also available in the MiniMELF case with the type designations LL103A to LL103C, DO-35 case with the type designations SD103A to SD103C and SOD-323 case with type designations SD103AWS-V to SD103CWS-V. • For general purpose applications • AEC-Q101 qualified • Compliant to RoHS directive 2002/95/EC and in accordance to WEEE 2002/96/EC 17431 Mechanical Data Case: SOD-123 Weight: approx. 10.3 mg Packaging codes/options: GS18/10 k per 13" reel (8 mm tape), 10 k/box GS08/3 k per 7" reel (8 mm tape), 15 k/box Parts Table Part SD103AW-V Ordering code Type marking Remarks SD103AW-V-GS18 or SD103AW-V-GS08 S6 Tape and reel SD103BW-V SD103BW-V-GS18 or SD103BW-V-GS08 S7 Tape and reel SD103CW-V SD103CW-V-GS18 or SD103CW-V-GS08 S8 Tape and reel Absolute Maximum Ratings Tamb = 25 °C, unless otherwise specified Parameter Test condition Peak reverse voltage Part Symbol Value Unit SD103AW-V VRRM 40 V SD103BW-V VRRM 30 V SD103CW-V VRRM 20 V Ptot 400 1) mW IFSM 2 A Power dissipation (Infinite heat sink) Single cycle surge 10 µs square wave Note 1) Valid provided that electrodes are kept at ambient temperature Thermal Characteristics Tamb = 25 °C, unless otherwise specified Parameter Test condition Thermal resistance junction to ambient air Junction temperature Storage temperature range Symbol Value Unit RthJA 300 1) K/W Tj 125 °C Tstg - 55 to + 150 °C Note 1) Valid provided that electrodes are kept at ambient temperature Document Number 85681 Rev. 1.4, 05-Aug-10 For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] www.vishay.com 1 SD103AW-V, SD103BW-V, SD103CW-V Vishay Semiconductors Electrical Characteristics Tamb = 25 °C, unless otherwise specified Parameter Test condition Part Symbol Max. Unit VR = 30 V SD103AW-V IR 5 µA VR = 20 V SD103BW-V IR 5 µA VR = 10 V SD103CW-V IR 5 µA VF 370 mV 600 mV Leakage current IF = 20 mA Forward voltage drop Typ. IF = 200 mA VF VR = 0 V, f = 1 MHz CD 50 pF IF = IR = 50 mA to 200 mA, recover to 0.1 IR trr 10 ns Diode capacitance Reverse recovery time Min. Typical Characteristics Tamb = 25 °C, unless otherwise specified 1000 1000 IR - Reverse Current (µA) I F - Forward Current (mA) Tamb = 125 °C 100 10 1 0.1 0.01 0 0.2 0.4 0.6 0.8 50 °C 1 25 °C 0.1 5 10 15 20 25 30 35 40 45 50 VR - Reverse Voltage (V) Figure 3. Typical Variation of Reverse Current at Various Temperatures 100 5 tp = 300 ms 4 C D - Diode Capacitance (pF) I F - Forward Current (A) 75 °C 10 20084 Figure 1. Typical Variation of Forward Current vs. Forward Voltage duty cycle = 2 % 3 2 1 10 1 0 0 18489 0.5 1.0 www.vishay.com 0 1.5 VF - Forward Voltage (V) Figure 2. Typical High Current Forward Conduction Curve 2 100 °C 0.01 0 1.0 VF - Forward Voltage (V) 18488 100 18491 10 20 30 40 50 VR - Reverse Voltage (V) Figure 4. Typical Capacitance vs. Reverse Voltage For technical questions within your region, please contact one of the following: Document Number 85681 [email protected], [email protected], [email protected] Rev. 1.4, 05-Aug-10 SD103AW-V, SD103BW-V, SD103CW-V Vishay Semiconductors VR - Reverse Voltage (V) 50 40 100 mA 30 200 mA I F = 400 mA 20 10 0 0 100 200 Tamb - Ambient Temperature (°C) 18492 Figure 5. Blocking Voltage Deration vs. Temperature at Various Average Forward Currents 0.10 (0.004) 0.15 (0.006) 8° 0.45 (0.018) 0.25 (0.010) 0° to 0.2 (0.008) 1 (0.039) 1.35 (0.053) 0.1 (0.004) max. Package Dimensions in millimeters (inches): SOD-123 0.5 (0.020) ref. Cathode bar Mounting Pad Layout 2.85 (0.112) 2.55 (0.100) 0.85 (0.033) 2.5 (0.098) 0.85 (0.033) 3.55 (0.140) 1.7 (0.067) 3.85 (0.152) 1.40 (0.055) 0.45 (0.018) 0.65 (0.026) 0.85 (0.033) Rev. 4 - Date: 24. Sep. 2009 Document no.: S8-V-3910.01-001 (4) 17432 Document Number 85681 Rev. 1.4, 05-Aug-10 For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] www.vishay.com 3 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 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