VISHAY LL46-GS18

LL46
Vishay Semiconductors
Small Signal Schottky Diode
Features
• For general purpose applications
• This diode features low turn-on voltage
and high break-down voltage. This device
is protected by a PN junction guardring
against excessive voltage, such as
electrostatic discharges.
• This diode is also available in the DO-35 case with
type designation BAT46 and in the SOD-123 case
with type designation BAT46W-V.
• AEC-Q101 qualified
• Compliant to RoHS directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
17205
Mechanical Data
Case: MiniMELF SOD-80
Weight: approx. 31 mg
Cathode band color: black
Packaging codes/options:
GS18/10 k per 13" reel (8 mm tape), 10 k/box
GS08/2.5 k per 7" reel (8 mm tape), 12.5 k/box
Parts Table
Part
LL46
Ordering code
Type Marking
Remarks
LL46-GS18 or LL46-GS08
-
Tape and Reel
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Repetitive peak reverse voltage
Surge forward current
Power dissipation
1)
1)
Value
VRRM
100
IF
Forward continuous current
Repetitive peak forward current
Symbol
150
Unit
V
1)
mA
tp < 1 s, δ < 0.5
IFRM
3501)
mA
tp = 10 ms
IFSM
750
1)
mA
Ptot
2001)
mW
Tamb = 80 °C
Valid provided that electrodes are kept at ambient temperature
Thermal Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Symbol
Value
Unit
RthJA
3001)
K/W
Tj
125
°C
Ambient operating temperature range
Tamb
- 55 to + 125
°C
Storage temperature range
Tstg
- 65 to + 150
°C
Thermal resistance junction to ambient air
Junction temperature
1)
Valid provided that electrodes are kept at ambient temperature
Document Number 85673
Rev. 1.5, 05-Aug-10
For technical questions within your region, please contact one of the following:
[email protected], [email protected], [email protected]
www.vishay.com
1
LL46
Vishay Semiconductors
Electrical Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Reverse breakdown voltage
Leakage current2)
Forward voltage2)
Diode capacitance
2)
Test condition
Symbol
Min
IR = 100 µA (pulsed)
V(BR)
100
Typ.
Max
Unit
VR = 1.5 V
IR
0.5
µA
VR = 1.5 V, Tj = 60 °C
IR
5
µA
VR = 10 V
IR
0.8
µA
VR = 10 V, Tj = 60 °C
IR
7.5
µA
VR = 50 V
IR
2
µA
VR = 50 V, Tj = 60 °C
IR
15
µA
V
VR = 75 V
IR
5
µA
VR = 75 V, Tj = 60 °C
IR
20
µA
IF = 0.1 mA
VF
250
mV
IF = 10 mA
VF
450
mV
IF = 250 mA
VF
1000
mV
VR = 0 V, f = 1 MHz
CD
10
pF
VR = 1 V, f = 1 MHz
CD
6
pF
Pulse test tp < 300 µs, δ < 2 %
Typical Characteristics
Tamb = 25 °C, unless otherwise specified
IR - Reverse Leakage Current (µA)
I F - Forward Current (mA)
1000
T j = 60 °C
100
10
25 °C
1
0.1
0.01
10
T j = 60 °C
1
Tj = 25 °C
0.1
0.01
0
18546
0.2
0.4
0.6
0.8
1
VF - Forward Voltage (V)
www.vishay.com
0
1.2
Figure 1. Typical Instantaneous Forward Characteristics
2
100
18547
20
40
60
80
100
VR - Reverse Voltage (V)
Figure 2. Typical Reverse Characteristics
For technical questions within your region, please contact one of the following: Document Number 85673
[email protected], [email protected], [email protected]
Rev. 1.5, 05-Aug-10
LL46
Vishay Semiconductors
Ptot - Power Dissipation (mW)
250
200
150
100
50
0
0
20
40
60
80
100
120
140
Tamb - Ambient Temperature (°C)
20081
Figure 3. Admissible Power Dissipation vs. Ambient Temperature
Package Dimensions in millimeters (inches): MiniMELF SOD-80
1.6 (0.063)
1.4 (0.055)
Cathode indification
*
0.47 (0.019) max.
3.7 (0.146)
3.3 (0.130)
* The gap between plug and glass can
be either on cathode or anode side
Foot print recommendation:
1.25 (0.49) min.
2 (0.079) min.
2.5 (0.098) max.
5 (0.197) ref.
Document no.:6.560-5005.01-4
Rev. 8 - Date: 07.June.2006
96 12070
Document Number 85673
Rev. 1.5, 05-Aug-10
For technical questions within your region, please contact one of the following:
[email protected], [email protected], [email protected]
www.vishay.com
3
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Document Number: 91000
Revision: 11-Mar-11
www.vishay.com
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