DMN2011UFX

DMN2011UFX
DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
ADVANCED INFORMATION
Product Summary
Features and Benefits
V(BR)DSS
RDS(ON) max
20V
9.5mΩ @ VGS = 4.5V
13mΩ @ VGS = 2.5V







ID max
TA = +25°C
12.2 A
10.4 A
Low On-Resistance
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
ESD Protected
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Description and Applications
Mechanical Data
This MOSFET is designed to minimize the on-state resistance
(RDS(ON)) and yet maintain superior switching performance, making it


Case: V-DFN2050-4
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish – NiPdAu over Copper Leadframe.
Solderable per MIL-STD-202, Method 208 e4
Weight: 0.01 grams (Approximate)
ideal for high-efficiency power management applications.




General Purpose Interfacing Switch
Power Management Functions

G1 S1
V-DFN2050-4
D
D
D1/D2
G2
G1
ESD PROTECTED
Gate Protection
Diode
Top View
G2 S2
Top View
Pin-Out
Bottom View
S1
Gate Protection
Diode
S2
Equivalent Circuit
Ordering Information (Note 4)
Part Number
DMN2011UFX-7
Notes:
Case
V-DFN2050-4
Packaging
3,000 / Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.htmlfor more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
1X
1X = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: B = 2014)
M = Month (ex: 9 = September)
YM
Date Code Key
Year
Code
Month
Code
2014
B
Jan
1
2015
C
Feb
2
DMN2011UFX
Document number: DS37250 Rev. 3 - 2
Mar
3
2016
D
Apr
4
May
5
2017
E
Jun
6
2018
F
Jul
7
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Aug
8
2019
G
Sep
9
Oct
O
2020
H
Nov
N
Dec
D
August 2015
© Diodes Incorporated
DMN2011UFX
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
VDSS
VGSS
ADVANCED INFORMATION
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note 6) VGS = 4.5V
Steady
State
Continuous Drain Current (Note 6) VGS = 2.5V
Steady
State
TA = +25°C
TA = +70°C
TA = +25°C
TA = +70°C
Value
20
±12
12.2
9.8
ID
Unit
V
V
A
IDM
IS
IAS
EAS
10.4
8.3
80
2.5
18
17
A
A
A
mJ
Symbol
PD
RJA
RJC
TJ, TSTG
Max
2.1
59.1
7.1
-55 to +150
Unit
W
°C/W
°C/W
°C
ID
Pulsed Drain Current (10µs pulse, duty cycle = 1%)
Maximum Body Diode Continuous Current
Avalanche Current (Note 7) L = 0.1mH
Repetitive Avalanche Energy (Note 7) L = 0.1mH
A
Thermal Characteristics
Characteristic
Power Dissipation (Note 6)
Thermal Resistance, Junction to Ambient @TA = +25°C (Note 6)
Thermal Resistance, Junction to Case (Note 6)
Operating and Storage Temperature Range
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current TJ = +25°C
Gate-Source Leakage
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage
Symbol
Min
Typ
Max
Unit
BVDSS
IDSS
IGSS
20






1
±10
V
µA
µA
VGS = 0V, ID = 250μA
VDS = 16V, VGS = 0V
VGS = ±10V, VDS = 0V
VGS(th)
0.3
RDS(ON)

mΩ
VSD

1.0
9.5
10
10.5
11.5
13
1.2
V
Static Drain-Source On-Resistance







VDS = VGS, ID = 250μA
VGS = 4.5V, ID = 10A
VGS = 4.0V, ID = 10A
VGS = 3.5V, ID = 9A
VGS = 3.1V, ID = 9A
VGS = 2.5V, ID = 8A
VGS = 0V, IS = 1A
Ciss
Coss
Crss
Rg
Qg
Qg
Qgs
Qgd
tD(on)
tr
tD(off)
tf
trr
Qrr














2,248
295
265
1.5
24
56
3.5
5.1
3.6
2.6
21.6
13.5
12.8
6.9














pF
pF
pF
Ω
nC
nC
nC
nC
ns
ns
ns
ns
nS
nC
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge (VGS = 4.5V)
Total Gate Charge (VGS = 10V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Notes:
V
Test Condition
VDS = 10V, VGS = 0V,
f = 1.0MHz
VDS = 0V, VGS = 0V, f = 1MHz
VDS = 10V, ID = 8.5A
VDS = 10V, ID = 8.5A
VGS = 4.5V, RG = 1.8Ω
IF = 8.5A, dI/dt = 210A/μs
IF = 8.5A, dI/dt = 210A/μs
5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
7. IAS and EAS rating are based on low frequency and duty cycles to keep TJ = +25°C.
8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to product testing.
DMN2011UFX
Document number: DS37250 Rev. 3 - 2
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© Diodes Incorporated
DMN2011UFX
30.0
30
VGS = 10V
VDS = 5.0V
VGS = 4.5V
VGS = 4.0V
25.0
25
ID, DRAIN CURRENT (A)
ID, DRAIN CURRENT (A)
VGS = 3.0V
20.0
VGS = 1.5V
VGS = 2.5V
VGS = 2.0V
15.0
10.0
20
15
TA = 150°C
10
TA = 125°C
5
5.0
T A = -55°C
VGS = 1.0V
0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8
V DS, DRAIN-SOURCE VOLTAGE (V)
Figure 1 Typical Output Characteristics
2
0.04
0.035
0.03
VGS = 1.5V
0.025
0.02
0.015
VGS = 1.8V
0.01
VGS = 2.5V
0.005
0
VGS = 4.5V
0
5
10
15
20
25
ID, DRAIN-SOURCE CURRENT (A)
Figure 3 Typical On-Resistance vs.
Drain Current and Gate Voltage
RDS(ON), DRAIN-SOURCE ON-RESISTANCE ( )
0
0
2
1.6
VGS = 2.5V
ID = 5A
1.2
VGS = 1.8V
ID = 3A
0.8
3
VGS = 4.5V
0.012
TA = 150°C
TA = 125°C
0.01
TA = 85°C
0.008
TA = 25°C
0.006
TA = -55°C
0.004
0.002
0
0
5
10
15
20
25
ID, DRAIN CURRENT (A)
Figure 4 Typical On-Resistance vs.
Drain Current and Temperature
30
0.02
0.018
0.016
VGS = 1.8V
ID = 3A
0.014
0.012
0.01
VGS = 2.5V
ID = 5A
0.008
0.006
0.004
0.002
0
-50
-25
0
25
50
75 100 125 150
TJ, JUNCTION TEMPERATURE (C)
Figure 6 On-Resistance Variation with Temperature
-25
0
25
50
75 100 125 150
TJ, JUNCTION TEMPERATURE ( C)
Figure 5 On-Resistance Variation with Temperature
Document number: DS37250 Rev. 3 - 2
0.5
1
1.5
2
2.5
VGS, GATE-SOURCE VOLTAGE (V)
Figure 2 Typical Transfer Characteristics
0.014
0.4
-50
DMN2011UFX
0
0.016
30
RDS(ON), DRAIN-SOURCE ON-RESISTANCE ()
RDS(ON), DRAIN-SOURCE ON-RESISTANCE ()
0.0
TA = 85°C
TA = 25°C
VGS = 1.2V
RDS(ON), DRAIN-SOURCE
ON-RESISTANCE (NORMALIZED)
ADVANCED INFORMATION
VGS = 3.5V
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DMN2011UFX
30
IS, SOURCE CURRENT (A)
VGS(th), GATE THRESHOLD VOLTAGE (V)
25
0.8
ID = 1mA
0.6
ID = 250µA
0.4
0.2
20
15
TA = 150°C
TA = 125°C
TA = 25°C
10
TA = 85°C
TA = -55°C
5
0
-50
0
-25
0
25
50
75 100 125 150
TJ, JUNCTION TEMPERATURE (C)
Figure 7 Gate Threshold Variation vs. Ambient Temperature
0
0.3
0.6
0.9
1.2
1.5
VSD, SOURCE-DRAIN VOLTAGE (V)
Figure 8 Diode Forward Voltage vs. Current
10000
100000
TA = 125°C
10000
1000
CT, JUNCTION CAPACITANCE (pF)
IDSS, DRAIN LEAKAGE CURRENT (nA)
TA = 150°C
TA = 85°C
100
10
TA = 25°C
1
Ciss
1000
Coss
Crss
f = 1MHz
0.1
0
2
100
6
8 10 12 14 16 18 20
V DS, DRAIN-SOURCE VOLTAGE (V)
Figure 9 Typical Drain-Source Leakage Current vs. Voltage
4
10
0
2
4
6
8 10 12 14 16 18
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 10 Typical Junction Capacitance
20
100
R DS(on)
Limited
9
8
ID, DRAIN CURRENT (A)
VGS GATE THRESHOLD VOLTAGE (V)
ADVANCED INFORMATION
1
7
VDS = 10V
ID = 8.5A
6
5
4
3
10
DC
PW = 10s
1
PW = 100ms
PW = 10ms
0.1
2
1
0
0
10
20
30
40
50
Qg, TOTAL GATE CHARGE (nC)
Figure 11 Gate Charge
DMN2011UFX
Document number: DS37250 Rev. 3 - 2
60
PW = 1s
T J(max) = 150°C
T A = 25°C
VGS = 4.5V
Single Pulse
DUT on 1 * MRP Board
0.01
0.01
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PW = 1ms
PW = 100µs
0.1
1
10
V DS, DRAIN-SOURCE VOLTAGE (V)
Figure 12 SOA, Safe Operation Area
100
August 2015
© Diodes Incorporated
DMN2011UFX
r(t), TRANSIENT THERMAL RESISTANCE
ADVANCED INFORMATION
1
D = 0.9
D = 0.7
D = 0.5
D = 0.3
0.1
D = 0.1
D = 0.05
D = 0.02
0.01
D = 0.01
D = 0.005
RJA(t) = r(t) * RJA
RJA = 147°C/W
Duty Cycle, D = t1/ t2
D = Single Pulse
0.001
0.00001
DMN2011UFX
Document number: DS37250 Rev. 3 - 2
0.0001
0.001
0.01
0.1
1
t1, PULSE DURATION TIME (sec)
Figure 13 Transient Thermal Resistance
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10
100
1000
August 2015
© Diodes Incorporated
DMN2011UFX
Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version.
ADVANCED INFORMATION
A1
A3
A
V-DFN2050-4
Dim
Min
Max
Typ
A
0.75
0.85
0.80
A1
0
0.05
0.02
A3
0.15
b
0.20
0.30
0.25
b1
0.70
0.80
0.75
D
1.90
2.10
2.00
D2
1.40
1.60
1.50
E
4.90
5.10
5.00
E2
3.46
3.66
3.56
e
0.50 BSC
L
0.35
0.65
0.50
Z
0.375
All Dimensions in mm
Seating Plane
D
Pin #1 ID
e
D2
E
E2
L
b
Z
b1
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
X1
X
Y
G
Dimensions
C
G
X
X1
X2
X3
Y
Y1
Y2
C
Y1
Y2
X2
Value
(in mm)
0.500
0.150
0.350
0.850
1.540
0.175
0.700
3.600
5.300
X3
DMN2011UFX
Document number: DS37250 Rev. 3 - 2
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DMN2011UFX
ADVANCED INFORMATION
IMPORTANT NOTICE
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INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
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This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the
final and determinative format released by Diodes Incorporated.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
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representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2015, Diodes Incorporated
www.diodes.com
DMN2011UFX
Document number: DS37250 Rev. 3 - 2
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