DMN2013UFX Product Summary Description Applications Features

DMN2013UFX
Dual N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
Features and Benefits
RDS(ON) max
ID max
TA = +25°C
11.5mΩ @ VGS = 4.5V
10 A
14mΩ @ VGS = 2.5V
9A
V(BR)DSS
20V
Description





Low On-Resistance
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
ESD Protected

Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2)


Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability
This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on)) and yet maintain superior switching
performance, making it ideal for high efficiency power management
applications.
Mechanical Data
Applications





General Purpose Interfacing Switch
Power Management Functions


Case: W-DFN5020-6
Case Material: Molded Plastic, “Green” Molding Compound. UL
Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections: See Diagram Below
Weight: 0.03 grams (approximate)
G1 S1 S1
W-DFN5020-6
D1/D2
ESD PROTECTED
G2 S2 S2
Top View
Bottom View
Equivalent Circuit
Top View
Pin-Out
Ordering Information (Note 4)
Part Number
DMN2013UFX-7
Notes:
Case
W-DFN5020-6
Packaging
3000 / Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.htmlfor more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
FX = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: X = 2010)
M = Month (ex: 9 = September)
Date Code Key
Year
Code
Month
Code
2010
X
Jan
1
2011
Y
Feb
2
DMN2013UFX
Document number: DS36657 Rev. 2 - 2
Mar
3
2012
Z
Apr
4
May
5
2013
A
Jun
6
2014
B
Jul
7
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Aug
8
2015
C
Sep
9
Oct
O
2016
D
Nov
N
Dec
D
March 2014
© Diodes Incorporated
DMN2013UFX
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
VDSS
VGSS
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note 5) VGS = 4.5V
Steady
State
Continuous Drain Current (Note 5) VGS = 2.5V
Steady
State
TA = +25°C
TA = +70°C
TA = +25°C
TA = +70°C
Value
20
±8
10
8
ID
IDM
9
7
80
Symbol
PD
RθJA
PD
RθJA
TJ, TSTG
Max
0.78
163
2.14
59
-55 to +150
ID
Pulsed Drain Current (Note 7)
Unit
V
V
A
A
A
Thermal Characteristics
Characteristic
Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient @TA = +25°C (Note 5)
Power Dissipation (Note 6)
Thermal Resistance, Junction to Ambient @TA = +25°C (Note 6)
Operating and Storage Temperature Range
Unit
W
°C/W
W
°C/W
°C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current TJ = +25°C
Gate-Source Leakage
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage
Symbol
Min
Typ
Max
Unit
BVDSS
IDSS
IGSS
20
—
—
—
—
—
—
1
±10
V
μA
μA
VGS = 0V, ID = 250μA
VDS = 16V, VGS = 0V
VGS = ±8V, VDS = 0V
VGS(th)
0.5
RDS (ON)
—
|Yfs|
VSD
—
—
1.1
11.5
12.0
12.5
13.5
14.0
—
1.2
V
Static Drain-Source On-Resistance
—
8.4
8.5
8.6
9.0
9.6
18.2
—
VDS = VGS, ID = 250μA
VGS = 4.5V, ID = 8.5A
VGS = 4.0V, ID = 8.5A
VGS = 3.5V, ID = 8.5A
VGS = 3.1V, ID = 8A
VGS = 2.5V, ID = 8A
VDS = 5V, ID = 4A
VGS = 0V, IS = 8.5A
Ciss
Coss
Crss
Rg
Qg
Qg
Qgs
Qgd
tD(on)
tr
tD(off)
tf
—
—
—
—
—
—
—
—
—
—
—
—
2607
255
236
1.2
32.4
57.4
3.5
4.0
8.6
20.3
42.5
13.7
—
—
—
—
—
—
—
—
—
—
—
—
Forward Transfer Admittance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge (VGS = 4.5V)
Total Gate Charge (VGS = 8V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Notes:
mΩ
S
V
pF
pF
pF
Ω
nC
nC
nC
nC
ns
ns
ns
ns
Test Condition
VDS = 10V, VGS = 0V,
f = 1.0MHz
VDS = 0V, VGS = 0V, f = 1MHz
VDS = 10V, ID = 8.5A
VDS = 10V, ID = 8.5A
VGS = 4.5V, RG = 1.8Ω
5. Device mounted on FR-4 PCB with minimum recommended pad layout, single sided.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate
7. Repetitive rating, pulse width limited by junction temperature.
8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to production testing.
DMN2013UFX
Document number: DS36657 Rev. 2 - 2
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30
30.0
VGS = 8.0V
25.0
25
VGS = 2.5V
20.0
VGS = 2.0V
ID, DRAIN CURRENT (A)
ID, DRAIN CURRENT (A)
VDS = 5.0V
VGS = 4.5V
VGS = 1.5V
15.0
10.0
20
TA = 150°C
TA = 125°C
15
TA = 85°C
TA = 25°C
10
TA = -55°C
5.0
5
VGS = 1.2V
VGS = 1.1V
0.0
0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 1 Typical Output Characteristic
0
2
RDS(ON), DRAIN-SOURCE ON-RESISTANCE ()
0.012
0
0.5
1
1.5
2
2.5
VGS, GATE-SOURCE VOLTAGE (V)
Figure 2 Typical Transfer Characteristics
3
0.03
0.025
0.011
VGS = 2.5V
0.01
0.009
VGS = 4.5V
ID = 8.5A
0.015
VGS = 3.5V
0.008
0.02
VGS = 4.0V
0.01
0.005
0.007
0.006
1
6
11
16
21
26
ID, DRAIN-SOURCE CURRENT (A)
Figure 3 Typical On-Resistance vs.
Drain Current and Gate Voltage
31
0.02
0
1
2
3
4
5
6
7
VGS, GATE-SOURCE VOLTAGE (V)
Figure 4 Typical Transfer Characteristic
8
2
VGS = 4.5V
0.018
RDS(ON), DRAIN-SOURCE
ON-RESISTANCE (NORMALIZED)
RDS(ON), DRAIN-SOURCE ON-RESISTANCE ()
RDS(ON), DRAIN-SOURCE ON-RESISTANCE ()
0
0.016
TA = 150°C
0.014
TA = 125°C
0.012
TA = 85°C
0.01
T A = 25°C
0.008
TA = -55°C
0.006
0.004
1.5
VGS = 4.5V
ID = 10A
VGS = 2.5V
ID = 5A
1
0.5
0.002
0
0
5
10
15
20
25
ID, DRAIN CURRENT (A)
Figure 5 Typical On-Resistance vs.
Drain Current and Temperature
DMN2013UFX
Document number: DS36657 Rev. 2 - 2
30
0
-50
-25
0
25
50
75 100 125 150
TJ, JUNCTION TEMPERATURE (C)
Figure 6 On-Resistance Variation with Temperature
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RDS(ON), DRAIN-SOURCE ON-RESISTANCE ()
1.2
VGS(th), GATE THRESHOLD VOLTAGE (V)
1.1
VGS = 4.5V
ID = 10A
VGS = 2.5V
ID = 5.0A
TJ, JUNCTION TEMPERATURE (C)
Figure 7 On-Resistance Variation with Temperature
IS, SOURCE CURRENT (A)
25
TA = 150°C
20
TA = 85°C
TA = 25°C
10
TA = -55°C
5
0
0.8
ID = 1mA
0.7
ID = 250µA
0.6
0.5
0.4
0.3
0.2
0.1
0
-50
-25
0
25
50
75 100 125 150
TJ, JUNCTION TEMPERATURE (C)
Figure 8 Gate Threshold Variation vs. Ambient Temperature
10000
Ciss
1000
TA = 125°C
15
0.9
CT, JUNCTION CAPACITANCE (pF)
30
1
Coss
Crss
100
f = 1MHz
0
0.3
0.6
0.9
1.2
VSD, SOURCE-DRAIN VOLTAGE (V)
Figure 9 Diode Forward Voltage vs. Current
1.5
10
0
4
8
12
16
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 10 Typical Junction Capacitance
20
VGS GATE THRESHOLD VOLTAGE (V)
8
VDS = 10V
ID = 8.5A
6
4
2
0
0
5
10 15 20 25 30 35 40 45 50 55 60
Qg, TOTAL GATE CHARGE (nC)
Figure 11 Gate Charge
DMN2013UFX
Document number: DS36657 Rev. 2 - 2
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Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.
A
A3
A1
e
D
D2
Pin 1 ID
E
E2
W-DFN5020-6
Dim
Min
Max
Typ
A
0.75 0.85 0.80
A1
0
0.05 0.02
A3
0.15


b
0.20 0.30 0.25
D
1.90 2.10 2.00
D2
1.40 1.60 1.50
e
0.50


E
4.90 5.10 5.00
E2
2.80 3.00 2.90
L
0.35 0.65 0.50
Z
0.375


All Dimensions in mm
L
Z
b
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
Y
X
C
X1
G
Y2
Y3
X2
DMN2013UFX
Document number: DS36657 Rev. 2 - 2
Dimensions Value (in mm)
C
0.50
G
0.35
X
0.35
X1
0.90
X2
1.80
Y
0.70
Y2
1.60
Y3
3.20
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written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
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Copyright © 2014, Diodes Incorporated
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Document number: DS36657 Rev. 2 - 2
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