DMN2013UFX Dual N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits RDS(ON) max ID max TA = +25°C 11.5mΩ @ VGS = 4.5V 10 A 14mΩ @ VGS = 2.5V 9A V(BR)DSS 20V Description Low On-Resistance Low Input Capacitance Fast Switching Speed Low Input/Output Leakage ESD Protected Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Mechanical Data Applications General Purpose Interfacing Switch Power Management Functions Case: W-DFN5020-6 Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections: See Diagram Below Weight: 0.03 grams (approximate) G1 S1 S1 W-DFN5020-6 D1/D2 ESD PROTECTED G2 S2 S2 Top View Bottom View Equivalent Circuit Top View Pin-Out Ordering Information (Note 4) Part Number DMN2013UFX-7 Notes: Case W-DFN5020-6 Packaging 3000 / Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.htmlfor more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http://www.diodes.com/products/packages.html. Marking Information FX = Product Type Marking Code YM = Date Code Marking Y = Year (ex: X = 2010) M = Month (ex: 9 = September) Date Code Key Year Code Month Code 2010 X Jan 1 2011 Y Feb 2 DMN2013UFX Document number: DS36657 Rev. 2 - 2 Mar 3 2012 Z Apr 4 May 5 2013 A Jun 6 2014 B Jul 7 1 of 6 www.diodes.com Aug 8 2015 C Sep 9 Oct O 2016 D Nov N Dec D March 2014 © Diodes Incorporated DMN2013UFX Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Symbol VDSS VGSS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Note 5) VGS = 4.5V Steady State Continuous Drain Current (Note 5) VGS = 2.5V Steady State TA = +25°C TA = +70°C TA = +25°C TA = +70°C Value 20 ±8 10 8 ID IDM 9 7 80 Symbol PD RθJA PD RθJA TJ, TSTG Max 0.78 163 2.14 59 -55 to +150 ID Pulsed Drain Current (Note 7) Unit V V A A A Thermal Characteristics Characteristic Power Dissipation (Note 5) Thermal Resistance, Junction to Ambient @TA = +25°C (Note 5) Power Dissipation (Note 6) Thermal Resistance, Junction to Ambient @TA = +25°C (Note 6) Operating and Storage Temperature Range Unit W °C/W W °C/W °C Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 8) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current TJ = +25°C Gate-Source Leakage ON CHARACTERISTICS (Note 8) Gate Threshold Voltage Symbol Min Typ Max Unit BVDSS IDSS IGSS 20 — — — — — — 1 ±10 V μA μA VGS = 0V, ID = 250μA VDS = 16V, VGS = 0V VGS = ±8V, VDS = 0V VGS(th) 0.5 RDS (ON) — |Yfs| VSD — — 1.1 11.5 12.0 12.5 13.5 14.0 — 1.2 V Static Drain-Source On-Resistance — 8.4 8.5 8.6 9.0 9.6 18.2 — VDS = VGS, ID = 250μA VGS = 4.5V, ID = 8.5A VGS = 4.0V, ID = 8.5A VGS = 3.5V, ID = 8.5A VGS = 3.1V, ID = 8A VGS = 2.5V, ID = 8A VDS = 5V, ID = 4A VGS = 0V, IS = 8.5A Ciss Coss Crss Rg Qg Qg Qgs Qgd tD(on) tr tD(off) tf — — — — — — — — — — — — 2607 255 236 1.2 32.4 57.4 3.5 4.0 8.6 20.3 42.5 13.7 — — — — — — — — — — — — Forward Transfer Admittance Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 9) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge (VGS = 4.5V) Total Gate Charge (VGS = 8V) Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Notes: mΩ S V pF pF pF Ω nC nC nC nC ns ns ns ns Test Condition VDS = 10V, VGS = 0V, f = 1.0MHz VDS = 0V, VGS = 0V, f = 1MHz VDS = 10V, ID = 8.5A VDS = 10V, ID = 8.5A VGS = 4.5V, RG = 1.8Ω 5. Device mounted on FR-4 PCB with minimum recommended pad layout, single sided. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate 7. Repetitive rating, pulse width limited by junction temperature. 8. Short duration pulse test used to minimize self-heating effect. 9. Guaranteed by design. Not subject to production testing. DMN2013UFX Document number: DS36657 Rev. 2 - 2 2 of 6 www.diodes.com March 2014 © Diodes Incorporated DMN2013UFX 30 30.0 VGS = 8.0V 25.0 25 VGS = 2.5V 20.0 VGS = 2.0V ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) VDS = 5.0V VGS = 4.5V VGS = 1.5V 15.0 10.0 20 TA = 150°C TA = 125°C 15 TA = 85°C TA = 25°C 10 TA = -55°C 5.0 5 VGS = 1.2V VGS = 1.1V 0.0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 1 Typical Output Characteristic 0 2 RDS(ON), DRAIN-SOURCE ON-RESISTANCE () 0.012 0 0.5 1 1.5 2 2.5 VGS, GATE-SOURCE VOLTAGE (V) Figure 2 Typical Transfer Characteristics 3 0.03 0.025 0.011 VGS = 2.5V 0.01 0.009 VGS = 4.5V ID = 8.5A 0.015 VGS = 3.5V 0.008 0.02 VGS = 4.0V 0.01 0.005 0.007 0.006 1 6 11 16 21 26 ID, DRAIN-SOURCE CURRENT (A) Figure 3 Typical On-Resistance vs. Drain Current and Gate Voltage 31 0.02 0 1 2 3 4 5 6 7 VGS, GATE-SOURCE VOLTAGE (V) Figure 4 Typical Transfer Characteristic 8 2 VGS = 4.5V 0.018 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) RDS(ON), DRAIN-SOURCE ON-RESISTANCE () RDS(ON), DRAIN-SOURCE ON-RESISTANCE () 0 0.016 TA = 150°C 0.014 TA = 125°C 0.012 TA = 85°C 0.01 T A = 25°C 0.008 TA = -55°C 0.006 0.004 1.5 VGS = 4.5V ID = 10A VGS = 2.5V ID = 5A 1 0.5 0.002 0 0 5 10 15 20 25 ID, DRAIN CURRENT (A) Figure 5 Typical On-Resistance vs. Drain Current and Temperature DMN2013UFX Document number: DS36657 Rev. 2 - 2 30 0 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) Figure 6 On-Resistance Variation with Temperature 3 of 6 www.diodes.com March 2014 © Diodes Incorporated DMN2013UFX RDS(ON), DRAIN-SOURCE ON-RESISTANCE () 1.2 VGS(th), GATE THRESHOLD VOLTAGE (V) 1.1 VGS = 4.5V ID = 10A VGS = 2.5V ID = 5.0A TJ, JUNCTION TEMPERATURE (C) Figure 7 On-Resistance Variation with Temperature IS, SOURCE CURRENT (A) 25 TA = 150°C 20 TA = 85°C TA = 25°C 10 TA = -55°C 5 0 0.8 ID = 1mA 0.7 ID = 250µA 0.6 0.5 0.4 0.3 0.2 0.1 0 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) Figure 8 Gate Threshold Variation vs. Ambient Temperature 10000 Ciss 1000 TA = 125°C 15 0.9 CT, JUNCTION CAPACITANCE (pF) 30 1 Coss Crss 100 f = 1MHz 0 0.3 0.6 0.9 1.2 VSD, SOURCE-DRAIN VOLTAGE (V) Figure 9 Diode Forward Voltage vs. Current 1.5 10 0 4 8 12 16 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 10 Typical Junction Capacitance 20 VGS GATE THRESHOLD VOLTAGE (V) 8 VDS = 10V ID = 8.5A 6 4 2 0 0 5 10 15 20 25 30 35 40 45 50 55 60 Qg, TOTAL GATE CHARGE (nC) Figure 11 Gate Charge DMN2013UFX Document number: DS36657 Rev. 2 - 2 4 of 6 www.diodes.com March 2014 © Diodes Incorporated DMN2013UFX Package Outline Dimensions Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version. A A3 A1 e D D2 Pin 1 ID E E2 W-DFN5020-6 Dim Min Max Typ A 0.75 0.85 0.80 A1 0 0.05 0.02 A3 0.15 b 0.20 0.30 0.25 D 1.90 2.10 2.00 D2 1.40 1.60 1.50 e 0.50 E 4.90 5.10 5.00 E2 2.80 3.00 2.90 L 0.35 0.65 0.50 Z 0.375 All Dimensions in mm L Z b Suggested Pad Layout Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. Y X C X1 G Y2 Y3 X2 DMN2013UFX Document number: DS36657 Rev. 2 - 2 Dimensions Value (in mm) C 0.50 G 0.35 X 0.35 X1 0.90 X2 1.80 Y 0.70 Y2 1.60 Y3 3.20 5 of 6 www.diodes.com March 2014 © Diodes Incorporated DMN2013UFX IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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