A Product Line of Diodes Incorporated DMN2300UFD 20V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits V(BR)DSS RDS(on) Max 20V 200mΩ @ VGS = 4.5V 260mΩ @ VGS = 2.5V 400mΩ @ VGS = 1.8V 500mΩ @ VGS = 1.5V • • • • • • ID max TA = 25°C (Notes 4) 1.73A 1.50A 1.27A 1.15A Low Gate Threshold Voltage Fast Switching Speed “Lead Free”, RoHS Compliant (Note 1) Halogen and Antimony Free. "Green" Device (Note 2) ESD Protected Gate 2KV Qualified to AEC-Q101 Standards for High Reliability Mechanical Data Description and Applications This MOSFET has been designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. • • • • • Load switch • Case: X1-DFN1212-3 Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish ۛ NiPdAu over Copper leadframe. Solderable per MIL-STD-202, Method 208 Weight: 0.005 grams (approximate) Drain X1-DFN1212-3 Body Diode Gate Gate Protection Diode Top View Bottom View Source Equivalent Circuit Pin-out Top view Ordering Information (Note 3) Part Number DMN2300UFD-7 Notes: Marking KS2 Reel size (inches) 7 Tape width (mm) 8 Quantity per reel 3000 1. No purposefully added lead 2. Diodes Inc's "Green" policy can be found on our website at http://www.diodes.com. 3. For packaging details, go to our website at http://www.diodes.com. Marking Information KS2 = Product Type Marking Code YM = Date Code Marking Y = Year (ex: Y = 2011) M = Month (ex: 9 = September) Date Code Key Year Code Month Code 2011 Y Jan 1 2012 Z Feb 2 DMN2300UFD Datasheet Number: DS35443 Rev. 2 - 2 Mar 3 2013 A Apr 4 May 5 2014 B Jun 6 1 of 7 www.diodes.com 2015 C Jul 7 Aug 8 2016 D Sep 9 Oct O 2017 E Nov N Dec D September 2011 © Diodes Incorporated A Product Line of Diodes Incorporated DMN2300UFD Maximum Ratings @TA = 25°C unless otherwise specified Characteristic Symbol VDSS VGSS Drain-Source Voltage Gate-Source Voltage Steady State Continuous Drain Current TA = 25°C (Note 4) TA = 85°C (Note 4) TA = 25°C (Note 5) Value 20 ±8 1.73 1.34 1.21 6.0 ID Pulsed Drain Current (Note 6) IDM Unit V V A A Thermal Characteristics @TA = 25°C unless otherwise specified Characteristic Power Dissipation Thermal Resistance, Junction to Ambient Symbol (Note 4) (Note 5) (Note 4) (Note 5) PD RθJA Operating and Storage Temperature Range Notes: Value 0.96 0.47 130 265 -55 to +150 TJ, TSTG Unit W W °C/W °C/W °C 4. For a device surface mounted on 15mm x 15mm x 1.6mm FR4 PCB with high coverage of 2oz copper, in still air conditions; the device is measured when operating in a steady-state condition. 5. Same as note 4, except the device is mounted on minimum recommended pad layout. 6. Device mounted on minimum recommended pad layout test board, 10µs pulse duty cycle = 1%. Thermal Characteristics 10 ID(A) @PW =1ms Single Pulse RθJA = 136°C/W RθJA (t) = RθJA*r(t) T J - T A = P*R θJA 9 8 RDS(ON) Limited I D (A )@ P W= ID, DRAIN CURRENT (A) P(pk), PEAK TRANSIENT POWER (W) 10 7 6 5 4 3 10 0µ 1 @ A) I D( A) I D( 0.1 =1 W @P 0s )@ (A s =1 PW ID @ A) I D( =1 PW 00 @ A) I D( 0.01 2 s DC ms =1 PW 0m s TJ(MAX) = 150°C TA = 25°C Single Pulse 1 0 0.0001 0.001 0.01 0.1 1 10 100 1000 t1, PULSE DURATION TIME (sec) Fig. 1 Single Pulse Maximum Power Dissipation DMN2300UFD Datasheet Number: DS35443 Rev. 2 - 2 0.001 0.1 2 of 7 www.diodes.com ID(A) @ PW=10µs 1 10 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 2 SOA, Safe Operation Area 100 September 2011 © Diodes Incorporated A Product Line of Diodes Incorporated DMN2300UFD r(t), TRANSIENT THERMAL RESISTANCE 1 D = 0.7 D = 0.5 D = 0.3 D = 0.9 0.1 D = 0.1 D = 0.05 D = 0.02 0.01 D = 0.01 RθJA(t) = r(t) * RθJA RθJA = 136°C/W Duty Cycle, D = t1/ t2 D = 0.005 D = Single Pulse 0.001 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 t1, PULSE DURATION TIMES (sec) Fig. 3 Transient Thermal Resistance 10 100 1,000 Electrical Characteristics @TA = 25°C unless otherwise specified Characteristic OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current TJ = 25°C Gate-Source Leakage ON CHARACTERISTICS (Note 7) Gate Threshold Voltage Symbol Min Typ Max Unit BVDSS IDSS IGSS 20 - - 1 ±10 V μA μA VGS = 0V, ID = 250μA VDS = 20V, VGS = 0V VGS = ±8V, VDS = 0V VGS(th) 0.45 - V Static Drain-Source On-Resistance RDS (ON) - - |Yfs| VSD 40 - 0.7 0.95 200 260 400 500 1.2 VDS = VGS, ID = 250μA VGS = 4.5V, ID = 900mA VGS = 2.5V, ID = 800mA VGS = 1.8V, ID = 700mA VGS = 1.5V, ID = 200mA VDS = 3V, ID = 300mA VGS = 0V, IS = 300mA Ciss Coss Crss Rg Qg Qgs Qgd tD(on) tr tD(off) tf - 67.62 9.74 7.58 68.51 0.89 0.14 0.16 4.92 6.93 21.71 10.62 2 - Forward Transfer Admittance Diode Forward Voltage DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge (Note 8) Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Notes: mΩ mS V pF pF pF Ω nC nC nC ns ns ns ns Test Condition VDS = 25V, VGS = 0V, f = 1.0MHz VDS = 0V, VGS = 0V, f = 1MHz VGS = 4.5V, VDS = 15V, ID = 1A VDS = 10V, ID = 1A VGS = 10V, RG = 6Ω 7. Short duration pulse test used to minimize self-heating effect. 8. Guarantee by design. DMN2300UFD Datasheet Number: DS35443 Rev. 2 - 2 3 of 7 www.diodes.com September 2011 © Diodes Incorporated A Product Line of Diodes Incorporated DMN2300UFD 2.0 2.0 VGS = 4.5V VDS = 5V VGS = 2.5V 1.5 ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) VGS = 2.0V VGS = 1.8V VGS = 1.5V 1.0 0.5 1.5 1.0 TA = 150°C 0.5 TA = 85°C TA = 125°C TA = 25°C VGS = 1.2V TA = -55°C 0 1 2 3 4 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 4 Typical Output Characteristic VGS = 1.5V 0.8 0.6 0.4 VGS = 1.8V VGS = 2.5V 0.2 VGS = 4.5V 0 0.4 0.8 1.2 1.6 ID, DRAIN-SOURCE CURRENT (A) Fig. 6 Typical On-Resistance vs. Drain Current and Gate Voltage 2 VGS = 1.8V 0.5 TA = 150°C 0.4 0.3 T A = 85°C T A = 25°C 0.2 TA = -55°C 0.1 0 0 0.2 0.4 0.6 0.8 1 Datasheet Number: DS35443 Rev. 2 - 2 3 0.6 VGS = 4.5V 0.5 0.4 0.3 TA = 125°C TA = 150°C 0.2 TA = 85°C TA = 25°C 0.1 0 0 TA = -55°C 0.2 0.4 0.6 0.8 1 0.6 TA = 150°C VGS = 1.5V 0.5 TA = T A = 85 0.4 °C 125 °C °C T A = 25 0.3 TA = -55°C 0.2 0.1 0 0 0.2 0.4 0.6 0.8 1 ID, DRAIN CURRENT (A) Fig. 9 Typical On-Resistance vs. Drain Current and Temperature ID, DRAIN CURRENT (A) Fig. 8 Typical On-Resistance vs. Drain Current and Temperature DMN2300UFD 0.5 1 1.5 2 2.5 VGS, GATE-SOURCE VOLTAGE (V) Fig. 5 Typical Transfer Characteristic ID, DRAIN CURRENT (A) Fig. 7 Typical On-Resistance vs. Drain Current and Temperature 0.6 TA = 125°C 0 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) 1 0 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) 5 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) 0 0 4 of 7 www.diodes.com September 2011 © Diodes Incorporated A Product Line of Diodes Incorporated DMN2300UFD RDSON, DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) VGS = 2.5V ID = 500mA 1.5 VGS = 4.5V ID = 1.0A 1.3 VGS = 1.8V ID = 100mA 1.1 VGS = 1.5V ID = 50mA 0.9 0.7 0.5 -50 0.6 RDSON , DRAIN-SOURCE ON-RESISTANCE (Ω) 1.7 0.5 0.4 0.3 0.2 0 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Fig. 10 On-Resistance Variation with Temperature VGS = 4.5V ID = 1.0A VGS = 2.5V ID = 500mA 0.1 -50 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Fig. 11 On-Resistance Variation with Temperature 2.0 1.2 1.0 IS, SOURCE CURRENT (A) VGS(TH), GATE THRESHOLD VOLTAGE (V) VGS = 1.8V ID = 100mA VGS = 1.5V ID = 50mA ID = 1mA 0.8 0.6 ID = 250µA 0.4 1.6 1.2 TA = 25°C 0.8 0.4 0.2 0 0 -50 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Fig. 12 Gate Threshold Variation vs. Ambient Temperature 0 0.2 0.4 0.6 0.8 1.0 1.2 VSD, SOURCE-DRAIN VOLTAGE (V) Fig. 13 Diode Forward Voltage vs. Current 100,000 1,000 IGSS, LEAKAGE CURRENT (nA) IDSS, LEAKAGE CURRENT (nA) T A = 125°C 100 T A = 85°C 10 TA = 25°C TA = -55°C 1 2 4 6 8 10 12 14 16 18 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 14 Typical Leakage Current vs. Drain-Source Voltage DMN2300UFD Datasheet Number: DS35443 Rev. 2 - 2 20 5 of 7 www.diodes.com 10,000 TA = 150°C T A = 125°C 1,000 T A = 85°C TA = 25°C 100 TA = -55°C 10 1 2 4 6 8 10 12 VGS, GATE-SOURCE VOLTAGE (V) Fig.15 Leakage Current vs. Gate-Source Voltage September 2011 © Diodes Incorporated A Product Line of Diodes Incorporated DMN2300UFD VGS, GATE-SOURCE VOLTAGE (V) 8 VDS = 15V ID = 1A 6 4 2 0 0 0.5 1 1.5 2 2.5 Qg, TOTAL GATE CHARGE (nC) Fig. 16 Gate-Charge Characteristics 3 Package Outline Dimensions A X1-DFN1212-3 Dim Min Max Typ A 0.47 0.53 0.50 A1 0 0.05 0.02 A3 0.13 b 0.27 0.37 0.32 b1 0.17 0.27 0.22 D 1.15 1.25 1.20 E 1.15 1.25 1.20 e 0.80 L 0.25 0.35 0.30 All Dimensions in mm A3 A1 D e b1 (2x) E L b Suggested Pad Layout X Y X1 (2x) Y2 Y1 (2x) Dimensions C X X1 Y Y1 Y2 Value (in mm) 0.80 0.42 0.32 0.50 0.50 1.50 C DMN2300UFD Datasheet Number: DS35443 Rev. 2 - 2 6 of 7 www.diodes.com September 2011 © Diodes Incorporated A Product Line of Diodes Incorporated DMN2300UFD MPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. LIFE SUPPORT Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright © 2011, Diodes Incorporated www.diodes.com DMN2300UFD Datasheet Number: DS35443 Rev. 2 - 2 7 of 7 www.diodes.com September 2011 © Diodes Incorporated