DMP21D0UFD

A Product Line of
Diodes Incorporated
DMP21D0UFD
20V P-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
Features and Benefits
V(BR)DSS
RDS(on) Max
-20V
495mΩ @ VGS = -4.5V
730mΩ @ VGS = -2.5V
960mΩ @ VGS = -1.8V
1300mΩ @ VGS = -1.5V
•
•
•
•
•
•
ID max
TA = 25°C
(Notes 4)
-1.14A
-0.94A
-0.85A
-0.75A
Low Gate Threshold Voltage
Fast Switching Speed
ESD Protected Gate 3KV
Totally Lead-Free & Fully RoHS compliant (Note 1)
Halogen and Antimony Free. “Green” Device (Note 2)
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
Description and Applications
This MOSFET has been designed to minimize the on-state resistance
(RDS(on)) and yet maintain superior switching performance, making it
ideal for high efficiency power management applications.
•
Portable electronics
•
•
•
•
•
Case: X1-DFN1212-3
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish – NiPdAu over Copper leadframe. Solderable
per MIL-STD-202, Method 208
Weight: 0.005 grams (approximate)
Drain
X1-DFN1212-3
S
Gate
D
Gate
Protection
Diode
Top View
ESD PROTECTED TO 3kV
G
Source
Bottom View
Equivalent Circuit
Pin-out Top view
Reel size (inches)
7
Tape width (mm)
8
Quantity per reel
3000
Ordering Information (Note 3)
Part Number
DMP21D0UFD-7
Notes:
Marking
K21
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. Halogen and Antimony free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
3. For packaging details, go to our website at http://www.diodes.com.
Marking Information
K21 = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: Y = 2011)
M = Month (ex: 9 = September)
K21
YM
Date Code Key
Year
Code
Month
Code
2011
Y
Jan
1
2012
Z
Feb
2
DMP21D0UFD
Datasheet Number: DS35364 Rev. 4 - 2
Mar
3
2013
A
Apr
4
May
5
2014
B
Jun
6
1 of 8
www.diodes.com
2015
C
Jul
7
Aug
8
2016
D
Sep
9
Oct
O
2017
E
Nov
N
Dec
D
March 2012
© Diodes Incorporated
A Product Line of
Diodes Incorporated
DMP21D0UFD
Maximum Ratings @TA = 25°C unless otherwise specified
Characteristic
Symbol
VDSS
VGSS
Drain-Source Voltage
Gate-Source Voltage
Steady
State
Continuous Drain Current
TA = 25°C (Note 4)
TA = 85°C (Note 4)
TA = 25°C (Note 5)
Pulsed Drain Current (Note 6)
Thermal Characteristics
IDM
Unit
V
V
Value
930
490
135
256
-55 to +150
Unit
mW
mW
°C/W
°C/W
°C
A
A
@TA = 25°C unless otherwise specified
Characteristic
Power Dissipation
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
Notes:
ID
Value
-20
±8
-1.14
-0.83
-0.82
-4.0
Symbol
(Note 4)
(Note 5)
(Note 4)
(Note 5)
PD
RθJA
TJ, TSTG
4. For a device surface mounted on 15mm x 15mm x 1.6mm FR4 PCB with high coverage of 2oz copper, in still air conditions; the device is measured
when operating in a steady-state condition.
5. Same as note 4, except the device is mounted on minimum recommended pad layout.
6. Device mounted on minimum recommended pad layout test board, 10µs pulse duty cycle = 1%.
DMP21D0UFD
Datasheet Number: DS35364 Rev. 4 - 2
2 of 8
www.diodes.com
March 2012
© Diodes Incorporated
A Product Line of
Diodes Incorporated
DMP21D0UFD
Thermal Characteristics
10
Single Pulse
RθJA = 136°C/W
RθJA (t) = RθJA*r(t)
T J - T A = P*R θJA
9
8
-ID(A) @PW =1ms
ID, DRAIN CURRENT (A)
P(pk), PEAK TRANSIENT POWER (W)
10
7
6
5
4
3
-I
D
(A
)@
P
W=
1
@
(A)
-I D
DC
@
(A)
-I D
=1
PW
@
(A)
-I D
0.1
10
0
µs
0s
=1
PW
@
(A)
-I D
s
=1
PW
00
ms
)@
(A
-I D
0.01
2
RDS(ON)
Limited
=1
PW
0m
s
TJ(MAX) = 150° C
TA = 25°C
Single Pulse
1
0.001
0.1
0
0.0001 0.001
r(t), TRANSIENT THERMAL RESISTANCE
0.01 0.1
1
10
100
1000
t1, PULSE DURATION TIME (sec)
Fig. 1 Single Pulse Maximum Power Dissipation
1
-I D(A) @
PW=10µs
1
10
-VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 2 SOA, Safe Operation Area
100
D = 0.7
D = 0.5
D = 0.3
D = 0.9
0.1
D = 0.1
D = 0.05
D = 0.02
0.01
D = 0.01
D = 0.005
RθJA(t) = r(t) * RθJA
RθJA = 54°C/W
Duty Cycle, D = t1/ t2
Single Pulse
0.001
0.000001 0.00001
DMP21D0UFD
Datasheet Number: DS35364 Rev. 4 - 2
0.0001
0.001
0.01
0.1
1
t1, PULSE DURATION TIMES (sec)
Fig. 3 Transient Thermal Resistance
3 of 8
www.diodes.com
10
100
1,000
March 2012
© Diodes Incorporated
A Product Line of
Diodes Incorporated
DMP21D0UFD
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current TJ = 25°C
Gate-Source Leakage
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
Symbol
Min
Typ
Max
Unit
BVDSS
IDSS
IGSS
-20
-
-
-1
±10
V
μA
μA
VGS = 0V, ID = -250μA
VDS = -20V, VGS = 0V
VGS = ±8V, VDS = 0V
VGS(th)
-0.45
-0.7
V
Static Drain-Source On-Resistance
RDS (ON)
-
-
|Yfs|
VSD
50
-
-
-1.2
495
730
960
1300
-1.2
VDS = VGS, ID = -250μA
VGS = -4.5V, ID = -800mA
VGS = -2.5V, ID = -700mA
VGS = -1.8V, ID = -100mA
VGS = -1.5V, ID = -100mA
VDS = -3V, ID = -300mA
VGS = 0V, IS = -300mA
Ciss
Coss
Crss
Rg
Qg
Qg
Qgs
Qgd
tD(on)
tr
tD(off)
tf
-
76.5
13.7
10.7
195
1.5
1.0
0.2
0.3
7.1
8.0
31.7
18.5
-
Forward Transfer Admittance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge (Note 8)
Total Gate Charge (Note 8)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Notes:
mΩ
mS
V
pF
pF
pF
Ω
nC
nC
nC
nC
ns
ns
ns
ns
Test Condition
VDS = -10V, VGS = 0V,
f = 1.0MHz
VDS = 0V, VGS = 0V, f = 1MHz
VGS = -8V, VDS = -15V, ID = -1A
VGS = -4.5V, VDS = -15V,
ID = -1A
VDS = -10V, -ID = 1A
VGS = -4.5V, RG = 6Ω
7. Short duration pulse test used to minimize self-heating effect.
8. Guarantee by design.
2.0
2.0
VGS = -4.5V
VGS = -4.0V
VGS = -2.5V
1.5
-ID, DRAIN CURRENT (A)
-ID, DRAIN CURRENT (A)
VGS = -3.0V
VGS = -2.0V
1.0
VGS = -1.8V
0.5
VGS = -1.5V
1.5
VDS = -5V
1.0
0.5
TA = 150°C
T A = 125°C
VGS = -1.2V
0
0
1
2
3
4
-VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 4 Typical Output Characteristic
DMP21D0UFD
Datasheet Number: DS35364 Rev. 4 - 2
0
5
4 of 8
www.diodes.com
TA = 85°C
TA = 25°C
T A = -55°C
0
0.5
1.0
1.5
2.0
2.5
-VGS, GATE-SOURCE VOLTAGE (V)
Fig. 5 Typical Transfer Characteristic
3.0
March 2012
© Diodes Incorporated
A Product Line of
Diodes Incorporated
RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω)
1.0
VGS = -1.5V
0.8
VGS = -1.8V
0.6
VGS = -2.5V
0.4
VGS = -4.5V
0.2
0
0
0.4
0.8
1.2
1.6
-ID, DRAIN-SOURCE CURRENT (A)
Fig. 6 Typical On-Resistance
vs. Drain Current and Gate Voltage
2.0
1.2
TA = 150°C
VGS = -1.8V
1.0
RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω)
RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω)
RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω)
DMP21D0UFD
TA = 125°C
0.8
TA = 85°C
0.6
TA = 25°C
0.4
TA = -55°C
0.2
0
0
0.1
0.2
0.3
0.4
0.5
0.6
-ID, DRAIN CURRENT (A)
Fig. 8 Typical On-Resistance
vs. Drain Current and Temperature
0.7
RDSON, DRAIN-SOURCE ON-RESISTANCE (Ω)
RDSON, DRAIN-SOURCE
ON-RESISTANCE (NORMALIZED)
1.7
VGS = 5.0V
ID = 500mA
1.5
VGS = 2.5V
ID = 250mA
1.3
VGS = -1.5V
ID = -50mA
1.1
VGS = -1.8V
ID = -100mA
0.9
0.7
0.5
-50
-25
0
25
50
75 100 125 150
TA, AMBIENT TEMPERATURE (°C)
Fig. 10 On-Resistance Variation with Temperature
DMP21D0UFD
Datasheet Number: DS35364 Rev. 4 - 2
5 of 8
www.diodes.com
1.0
VGS = -4.5V
0.8
0.6
TA = 150°C
T A = 125°C
0.4
T A = 85°C
TA = 25°C
0.2
0
TA = -55°C
0
0.2
0.4
0.6
0.8
-ID, DRAIN CURRENT (A)
Fig. 7 Typical On-Resistance
vs. Drain Current and Temperature
1.0
1.6
T A = 150°C
VGS = -1.5V
1.4
TA = 125°C
1.2
T A = 85°C
1.0
TA = 25°C
0.8
TA = -55°C
0.6
0.4
0.2
0
0
0.1
0.2
0.3
0.4
0.5
-ID, DRAIN CURRENT (A)
Fig. 9 Typical On-Resistance
vs. Drain Current and Temperature
0.6
1
0.9
VGS = -1.5V
ID = -50mA
0.8
0.7
0.6
0.5
VGS = 2.5V
ID = 250mA
0.4
VGS = 5.0V
ID = -500mA
0.3
0.2
0.1
0
-50
-25
0
25
50
75 100 125 150
TA, AMBIENT TEMPERATURE (°C)
Fig. 11 On-Resistance Variation with Temperature
March 2012
© Diodes Incorporated
A Product Line of
Diodes Incorporated
DMP21D0UFD
2.0
1.8
1.2
-IS, SOURCE CURRENT (A)
-VGS(TH), GATE THRESHOLD VOLTAGE (V)
1.4
1.0
ID = -1mA
0.8
0.6
ID = -250µA
0.4
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
0.4
10,000
IGSS, LEAKAGE CURRENT (nA)
1,000
T A = 150°C
TA = 125°C
100
TA = 85°C
10
1
0.6
0.8
1.0
1.2
-VSD, SOURCE-DRAIN VOLTAGE (V)
Fig. 13 Diode Forward Voltage vs. Current
100,000
10,000
0
TA = 125°C
100
T A = 25°C
TA = -55°C
1
0.1
0
8
12
16
20
-VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 14 Typical Leakage Current vs. Drain-Source Voltage
2
4
6
8
VGS, GATE-SOURCE VOLTAGE (V)
Fig.15 Leakage Current vs. Gate-Source Voltage
CT, JUNCTION CAPACITANCE (pF)
1,000
10,000
TA = 150°C
TA = 125°C
1,000
100
TA = 85°C
TA = 25°C
10
T A = -55°C
1
0.1
T A = 85°C
10
4
100,000
T A = 150°C
1,000
T A = 25°C
IGSS, LEAKAGE CURRENT (nA)
TA = 25°C
0.2
0
-50 -25
0
25
50
75 100 125 150
TA, AMBIENT TEMPERATURE (°C)
Fig. 12 Gate Threshold Variation vs. Ambient Temperature
-IDSS, LEAKAGE CURRENT (nA)
1.6
0
2
4
6
8
VGS, GATE-SOURCE VOLTAGE (V)
Fig.16 Leakage Current vs. Gate-Source Voltage
DMP21D0UFD
Datasheet Number: DS35364 Rev. 4 - 2
6 of 8
www.diodes.com
f = 1MHz
100
Ciss
Coss
10
Crss
1
0
2
4
6
8 10 12 14 16 18 20
-VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 17 Typical Junction Capacitance
March 2012
© Diodes Incorporated
A Product Line of
Diodes Incorporated
DMP21D0UFD
-VGS, GATE-SOURCE VOLTAGE (V)
8
7
6
5
4
3
2
1
0
0
0.2
0.4 0.6 0.8 1.0 1.2 1.4 1.6
Qg, TOTAL GATE CHARGE (nC)
Fig. 18 Gate-Charge Characteristics
Package Outline Dimensions
A
X1-DFN1212-3
Dim Min Max Typ
A 0.47 0.53 0.50
A1
0 0.05 0.02
A3
0.13
b 0.27 0.37 0.32
b1 0.17 0.27 0.22
D 1.15 1.25 1.20
E 1.15 1.25 1.20
e
0.80
L 0.25 0.35 0.30
All Dimensions in mm
A3
A1
D
e
b1
(2x)
E
L
b
Suggested Pad Layout
X
Y
X1
(2x)
Y2
Y1
(2x)
Dimensions
C
X
X1
Y
Y1
Y2
Value (in mm)
0.80
0.42
0.32
0.50
0.50
1.50
C
DMP21D0UFD
Datasheet Number: DS35364 Rev. 4 - 2
7 of 8
www.diodes.com
March 2012
© Diodes Incorporated
A Product Line of
Diodes Incorporated
DMP21D0UFD
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B.
A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2012, Diodes Incorporated
www.diodes.com
DMP21D0UFD
Datasheet Number: DS35364 Rev. 4 - 2
8 of 8
www.diodes.com
March 2012
© Diodes Incorporated