July 2003 AO4609 Complementary Enhancement Mode Field Effect Transistor General Description Features The AO4609 uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. n-channel p-channel -30V VDS (V) = 30V ID = 8.5A -3A RDS(ON) RDS(ON) < 18mΩ (VGS=10V) < 130mΩ (VGS = 10V) < 28mΩ (VGS=4.5V) < 180mΩ (VGS = 4.5V) < 260mΩ (VGS = 2.5V) D1 D2 S2 G2 S1 G1 1 2 3 4 8 7 6 5 D2 D2 D1 D1 G1 G2 S1 S2 SOIC-8 p-channel n-channel Absolute Maximum Ratings TA=25°C unless otherwise noted Symbol Parameter Max n-channel VDS Drain-Source Voltage 30 VGS Gate-Source Voltage ±20 Continuous Drain Current A Pulsed Drain Current TA=25°C TA=70°C B TA=25°C Power Dissipation TA=70°C Junction and Storage Temperature Range ID IDM Thermal Characteristics: n-channel and p-channel Parameter t ≤ 10s Maximum Junction-to-Ambient A A Steady-State Maximum Junction-to-Ambient Steady-State Maximum Junction-to-Lead C A t ≤ 10s Maximum Junction-to-Ambient Steady-State Maximum Junction-to-Ambient A Steady-State Maximum Junction-to-Lead C ±12 8.5 -3 6.6 -2.4 40 -6 A 2 2 1.28 -55 to 150 -55 to 150 Symbol RθJA RθJL RθJA RθJL Device n-ch n-ch n-ch Typ 48 74 35 p-ch p-ch p-ch 56 81 40 Units V V 1.28 PD TJ, TSTG Max p-channel -30 W Max 62.5 110 40 °C Units °C/W °C/W °C/W 62.5 °C/W 110 °C/W 48 °C/W AO4609 N-Channel Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current IGSS Gate-Body leakage current Gate Threshold Voltage On state drain current VGS(th) ID(ON) Conditions Min ID=250µA, VGS=0V VDS=24V, VGS=0V 30 VDS=0V, VGS= ±20V VDS=VGS ID=250µA gFS VSD IS VGS=4.5V, ID=6A Forward Transconductance VDS=5V, ID=8.5A Diode Forward Voltage IS=1A,VGS=0V Maximum Body-Diode Continuous Current Reverse Transfer Capacitance Gate resistance SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) tr tD(off) tf trr Qrr Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime TJ=125°C Units V µA 1.8 100 3 nA V 15.5 22.3 23 18 27 28 mΩ 1 S V 3 A 30 VGS=10V, VDS=5V VGS=10V, ID=8.5A Static Drain-Source On-Resistance Crss Rg 1 Max 1 5 TJ=55°C RDS(ON) DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Typ A 23 0.75 mΩ 1040 pF VGS=0V, VDS=15V, f=1MHz 180 110 pF pF VGS=0V, VDS=0V, f=1MHz 0.7 Ω 19.2 nC VGS=10V, VDS=15V, ID=8.5A 9.36 2.6 nC nC VGS=10V, VDS=15V, RL=1.8Ω, RGEN=3Ω 4.2 5.2 4.4 17.3 3.3 16.7 nC ns ns ns ns Turn-Off Fall Time IF=8.5A, dI/dt=100A/µs Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=8.5A, dI/dt=100A/µs 6.7 ns nC A: The value of R θJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The value in any a given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using 80 µs pulses, duty cycle 0.5% max. 2 E. These tests are performed with the device mounted on 1 in FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA curve provides a single pulse rating. Alpha & Omega Semiconductor, Ltd. AO4609 P-Channel Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current IGSS Gate-Body leakage current Gate Threshold Voltage On state drain current VGS(th) ID(ON) Conditions Min ID=-250µA, VGS=0V VDS=-24V, VGS=0V -30 VDS=0V, VGS=±12V VDS=VGS ID=-250µA VGS=-4.5V, VDS=-5V -0.6 gFS VSD IS Static Drain-Source On-Resistance TJ=125°C VGS=-4.5V, ID=-2A VGS=-2.5V, ID=-1A VDS=-5V, ID=-3A Forward Transconductance Diode Forward Voltage IS=-1A,VGS=0V Maximum Body-Diode Continuous Current Rg Output Capacitance Reverse Transfer Capacitance Gate resistance SWITCHING PARAMETERS Qg Total Gate Charge Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) tr tD(off) tf trr Qrr V µA -1 ±100 -1.4 nA V 102 154 128 130 200 180 mΩ 187 4.5 260 mΩ 3 -0.85 -1 -2 V A A mΩ S VGS=0V, VDS=-15V, f=1MHz 409 55 pF pF VGS=0V, VDS=0V, f=1MHz 42 12 pF Ω VGS=-4.5V, VDS=-15V, ID=-3A 4.4 0.8 nC nC 1.32 5.3 4.4 31.5 8 15.8 nC ns ns ns ns Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Units -10 DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Max -1 -5 TJ=55°C VGS=-10V, ID=-3A RDS(ON) Typ VGS=-10V, VDS=-15V, RL=5Ω, RGEN=3Ω IF=-3A, dI/dt=100A/µs Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=-3A, dI/dt=100A/µs 8 A: The value of R θJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any a given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80 µs pulses, duty cycle 0.5% max. 2 E. These tests are performed with the device mounted on 1 in FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA curve provides a single pulse rating. Alpha & Omega Semiconductor, Ltd. ns nC AO4609 N-CHANNEL: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 30 2.00E+01 4V 10V 25 20 3.5V 1.20E+01 ID(A) ID (A) VDS=5V 1.60E+01 4.5V 15 125°C 8.00E+00 10 25°C VGS=3V 4.00E+00 5 0 0.00E+00 0 1 2 3 4 5 1.5 VDS (Volts) Fig 1: On-Region Characteristics 2.5 3 3.5 4 VGS(Volts) Figure 2: Transfer Characteristics 28 Normalized On-Resistance 1.6 26 VGS=4.5V 24 RDS(ON) (mΩ) 2 22 20 18 VGS=10V 16 14 VGS=10V ID=8.5A 1.4 VGS=4.5V 1.2 1 0.8 0 5 10 15 20 0 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 1.0E+01 50 1.0E+00 ID=8.5A 1.0E-01 30 IS (A) RDS(ON) (mΩ) 40 125°C 125°C 1.0E-02 25°C 1.0E-03 20 25°C 1.0E-04 1.0E-05 10 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. 0.0 0.2 0.4 0.6 0.8 VSD (Volts) Figure 6: Body-Diode Characteristics 1.0 AO4609 N-CHANNEL: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 1500 10 VDS=15V ID=8.5A 1250 Capacitance (pF) VGS (Volts) 8 6 4 2 Ciss 1000 750 500 Coss 250 0 Crss 0 0 4 8 12 16 20 0 5 Qg (nC) Figure 7: Gate-Charge Characteristics 50 RDS(ON) limited 100µs 1ms 10.0 0.1s 1s 1.0 TJ(Max)=150°C TA=25°C DC 10 100 20 Figure 9: Maximum Forward Biased Safe Operating Area (Note E) D=Ton/(Ton+Toff) TJ,PK=TA+PDM.ZθJA.RθJA RθJA=62.5°C/W 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) VDS (Volts) ZθJA Normalized Transient Thermal Resistance 30 30 0 0.001 0.1 10 25 10 10s 1 20 TJ(Max)=150°C TA=25°C 40 10µs 10ms 0.1 15 VDS (Volts) Figure 8: Capacitance Characteristics Power (W) ID (Amps) 100.0 10 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 PD 0.1 Ton Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 Toff 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance Alpha & Omega Semiconductor, Ltd. 100 1000 AO4609 P-CHANNEL TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 20 -5V -10V 8 -4V VGS=-3.5V 10 6 -ID(A) -ID (A) 15 25°C VDS=-5V -4.5V -3V 125°C 4 -2.5V 5 2 -2.0V 0 0 0 1 2 3 4 5 0 0.5 250 Normalized On-Resistance 200 RDS(ON) (mΩ) 1.5 2 2.5 3 3.5 4 1.6 VGS=-2.5V 150 VGS=-4.5V 100 VGS=-10V 50 VGS=-10V VGS=-4.5V 1.4 VGS=-2.5V 1.2 ID=-2A 1 0.8 0 1 2 3 4 5 6 0 -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 300 1.0E+01 250 1.0E+00 1.0E-01 200 -IS (A) 125°C 150 100 25°C 1.0E-06 6 8 10 -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. 100 125 150 175 125°C 25°C 1.0E-04 0 4 75 1.0E-03 1.0E-05 2 50 1.0E-02 50 0 25 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature ID=-2A RDS(ON) (mΩ) 1 -VGS(Volts) Figure 2: Transfer Characteristics -VDS (Volts) Fig 1: On-Region Characteristics 0.0 0.2 0.4 0.6 0.8 1.0 -VSD (Volts) Figure 6: Body-Diode Characteristics 1.2 AO4609 P-CHANNEL TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 600 5 VDS=-15V ID=-3A 500 Capacitance (pF) -VGS (Volts) 4 3 2 1 Ciss 400 300 200 Coss 0 0 0 1 2 3 4 5 0 -Qg (nC) Figure 7: Gate-Charge Characteristics 5 10 15 20 25 30 -VDS (Volts) Figure 8: Capacitance Characteristics 100.0 20 TJ(Max)=150°C TA=25°C TJ(Max)=150°C TA=25°C 15 10.0 10µs RDS(ON) limited Power (W) -ID (Amps) Crss 100 100µs 1ms 10ms 0.1s 1.0 1s 10 5 10s DC 0 0.001 0.1 0.1 1 10 100 Figure 9: Maximum Forward Biased Safe Operating Area (Note E) ZθJA Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=62.5°C/W 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) -VDS (Volts) In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 PD 0.1 Ton T Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance Alpha & Omega Semiconductor, Ltd. 100 1000 ALPHA & OMEGA SO-8 Package Data SEMICONDUCTOR, INC. DIMENSIONS IN MILLIMETERS SYMBOLS A A1 A2 b c D E1 e E h L aaa θ MIN 1.45 0.00 −−− 0.33 0.19 4.80 3.80 5.80 0.25 0.40 −−− 0° NOM 1.50 −−− 1.45 −−− −−− −−− −−− 1.27 BSC −−− −−− −−− −−− −−− DIMENSIONS IN INCHES MAX 1.55 0.10 −−− 0.51 0.25 5.00 4.00 MIN 0.057 0.000 −−− 0.013 0.007 0.189 0.150 6.20 0.50 1.27 0.10 8° 0.228 0.010 0.016 −−− 0° NOM 0.059 −−− 0.057 −−− −−− −−− −−− 0.050 BSC −−− −−− −−− −−− −−− MAX 0.061 0.004 −−− 0.020 0.010 0.197 0.157 0.244 0.020 0.050 0.004 8° θ NOTE: 1. LEAD FINISH: 150 MICROINCHES ( 3.8 um) MIN. THICKNESS OF Tin/Lead (SOLDER) PLATED ON LEAD 2. TOLERANCE ±0.10 mm (4 mil) UNLESS OTHERWISE SPECIFIED 3. COPLANARITY : 0.10 mm 4. DIMENSION L IS MEASURED IN GAGE PLANE PACKAGE MARKING DESCRIPTION LOGO 4 6 0 9 FAYWLC NOTE: LOGO 4609 F A Y W LC RECOMMENDED LAND PATTERN - AOS LOGO - PART NUMBER CODE. - FAB LOCATION - ASSEMBLY LOCATION - YEAR CODE - WEEK CODE. - ASSEMBLY LOT CODE SO-8 PART NO. CODE PART NO. CODE AO4609 4609 UNIT: mm Rev. A ALPHA & OMEGA SEMICONDUCTOR, INC. SO-8 Carrier Tape SO-8 Reel SO-8 Tape Leader / Trailer & Orientation SO-8 Tape and Reel Data Document No. ALPHA & OMEGA Version Title SEMICONDUCTOR, LTD. SO-8 PACKAGE MARKING DESCRIPTION Standard product NOTE: LOGO 4609 F&A Y W LT - AOS LOGO - PART NUMBER CODE. - FOUNDRY AND ASSEMBLY LOCATION - YEAR CODE - WEEK CODE. - ASSEMBLY LOT CODE PART NO. DESCRIPTION AO4609 AO4609L Standard product Green product CODE 4609 4609 Green product PD-00064 rev C AO4609 Marking Description 8 1 RECOMMENDED LAND PATTERN θ SEATING PLANE UNIT: mm GAUGE PLANE MIN 1.35 0.10 1.25 0.31 0.17 4.80 3.80 5.80 0.25 0.40 0° NOM 1.65 −−− 1.50 −−− −−− 4.90 3.90 1.27 BSC 6.00 −−− −−− −−− MAX 1.75 0.25 1.65 0.51 0.25 5.00 4.00 0.228 0.010 0.016 0° MIN 0.053 0.004 0.049 0.012 0.007 0.189 0.150 NOM 0.065 −−− 0.059 −−− −−− 0.193 0.154 0.050 BSC 0.236 −−− −−− −−− 0.244 0.020 0.050 8° MAX 0.069 0.010 0.065 0.020 0.010 0.197 0.157 DIMENSIONS IN INCHES 6.20 0.50 1.27 8° DIMENSIONS IN MILLIMETERS NOTE 1. ALL DIMENSIONS ARE IN MILLMETERS. 2.DIMENSIONS ARE INCLUSIVE OF PLATING. 3.PACKAGE BODY SIZES EXCLUDE MOLD FLASH AND GATE BURRS. 4. DIMENSION L IS MEASURED IN GAUGE PLANE. 5. CONTROLLING DIMENSION IS MILLIMETER. CONVERTED INCH DIMENSIONS ARE NOT NECESSARILY EXACT. SYMBOLS A A1 A2 b c D E1 e E h L θ ALPHA & OMEGA SEMICONDUCTOR, LTD. SO-8 Carrier Tape SO-8 Reel SO-8 Tape Leader / Trailer & Orientation SO-8 Tape and Reel Data