A Product Line of Diodes Incorporated DMP21D0UFD 20V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits V(BR)DSS RDS(on) Max -20V 495mΩ @ VGS = -4.5V 730mΩ @ VGS = -2.5V 960mΩ @ VGS = -1.8V 1300mΩ @ VGS = -1.5V • • • • • • ID max TA = 25°C (Notes 4) -1.14A -0.94A -0.85A -0.75A Low Gate Threshold Voltage Fast Switching Speed ESD Protected Gate 3KV Totally Lead-Free & Fully RoHS compliant (Note 1) Halogen and Antimony Free. “Green” Device (Note 2) Qualified to AEC-Q101 Standards for High Reliability Mechanical Data Description and Applications This MOSFET has been designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. • Portable electronics • • • • • Case: X1-DFN1212-3 Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish – NiPdAu over Copper leadframe. Solderable per MIL-STD-202, Method 208 Weight: 0.005 grams (approximate) Drain X1-DFN1212-3 S Gate D Gate Protection Diode Top View ESD PROTECTED TO 3kV G Source Bottom View Equivalent Circuit Pin-out Top view Reel size (inches) 7 Tape width (mm) 8 Quantity per reel 3000 Ordering Information (Note 3) Part Number DMP21D0UFD-7 Notes: Marking K21 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. Halogen and Antimony free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 3. For packaging details, go to our website at http://www.diodes.com. Marking Information K21 = Product Type Marking Code YM = Date Code Marking Y = Year (ex: Y = 2011) M = Month (ex: 9 = September) K21 YM Date Code Key Year Code Month Code 2011 Y Jan 1 2012 Z Feb 2 DMP21D0UFD Datasheet Number: DS35364 Rev. 4 - 2 Mar 3 2013 A Apr 4 May 5 2014 B Jun 6 1 of 8 www.diodes.com 2015 C Jul 7 Aug 8 2016 D Sep 9 Oct O 2017 E Nov N Dec D March 2012 © Diodes Incorporated A Product Line of Diodes Incorporated DMP21D0UFD Maximum Ratings @TA = 25°C unless otherwise specified Characteristic Symbol VDSS VGSS Drain-Source Voltage Gate-Source Voltage Steady State Continuous Drain Current TA = 25°C (Note 4) TA = 85°C (Note 4) TA = 25°C (Note 5) Pulsed Drain Current (Note 6) Thermal Characteristics IDM Unit V V Value 930 490 135 256 -55 to +150 Unit mW mW °C/W °C/W °C A A @TA = 25°C unless otherwise specified Characteristic Power Dissipation Thermal Resistance, Junction to Ambient Operating and Storage Temperature Range Notes: ID Value -20 ±8 -1.14 -0.83 -0.82 -4.0 Symbol (Note 4) (Note 5) (Note 4) (Note 5) PD RθJA TJ, TSTG 4. For a device surface mounted on 15mm x 15mm x 1.6mm FR4 PCB with high coverage of 2oz copper, in still air conditions; the device is measured when operating in a steady-state condition. 5. Same as note 4, except the device is mounted on minimum recommended pad layout. 6. Device mounted on minimum recommended pad layout test board, 10µs pulse duty cycle = 1%. DMP21D0UFD Datasheet Number: DS35364 Rev. 4 - 2 2 of 8 www.diodes.com March 2012 © Diodes Incorporated A Product Line of Diodes Incorporated DMP21D0UFD Thermal Characteristics 10 Single Pulse RθJA = 136°C/W RθJA (t) = RθJA*r(t) T J - T A = P*R θJA 9 8 -ID(A) @PW =1ms ID, DRAIN CURRENT (A) P(pk), PEAK TRANSIENT POWER (W) 10 7 6 5 4 3 -I D (A )@ P W= 1 @ (A) -I D DC @ (A) -I D =1 PW @ (A) -I D 0.1 10 0 µs 0s =1 PW @ (A) -I D s =1 PW 00 ms )@ (A -I D 0.01 2 RDS(ON) Limited =1 PW 0m s TJ(MAX) = 150° C TA = 25°C Single Pulse 1 0.001 0.1 0 0.0001 0.001 r(t), TRANSIENT THERMAL RESISTANCE 0.01 0.1 1 10 100 1000 t1, PULSE DURATION TIME (sec) Fig. 1 Single Pulse Maximum Power Dissipation 1 -I D(A) @ PW=10µs 1 10 -VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 2 SOA, Safe Operation Area 100 D = 0.7 D = 0.5 D = 0.3 D = 0.9 0.1 D = 0.1 D = 0.05 D = 0.02 0.01 D = 0.01 D = 0.005 RθJA(t) = r(t) * RθJA RθJA = 54°C/W Duty Cycle, D = t1/ t2 Single Pulse 0.001 0.000001 0.00001 DMP21D0UFD Datasheet Number: DS35364 Rev. 4 - 2 0.0001 0.001 0.01 0.1 1 t1, PULSE DURATION TIMES (sec) Fig. 3 Transient Thermal Resistance 3 of 8 www.diodes.com 10 100 1,000 March 2012 © Diodes Incorporated A Product Line of Diodes Incorporated DMP21D0UFD Electrical Characteristics @TA = 25°C unless otherwise specified Characteristic OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current TJ = 25°C Gate-Source Leakage ON CHARACTERISTICS (Note 7) Gate Threshold Voltage Symbol Min Typ Max Unit BVDSS IDSS IGSS -20 - - -1 ±10 V μA μA VGS = 0V, ID = -250μA VDS = -20V, VGS = 0V VGS = ±8V, VDS = 0V VGS(th) -0.45 -0.7 V Static Drain-Source On-Resistance RDS (ON) - - |Yfs| VSD 50 - - -1.2 495 730 960 1300 -1.2 VDS = VGS, ID = -250μA VGS = -4.5V, ID = -800mA VGS = -2.5V, ID = -700mA VGS = -1.8V, ID = -100mA VGS = -1.5V, ID = -100mA VDS = -3V, ID = -300mA VGS = 0V, IS = -300mA Ciss Coss Crss Rg Qg Qg Qgs Qgd tD(on) tr tD(off) tf - 76.5 13.7 10.7 195 1.5 1.0 0.2 0.3 7.1 8.0 31.7 18.5 - Forward Transfer Admittance Diode Forward Voltage DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge (Note 8) Total Gate Charge (Note 8) Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Notes: mΩ mS V pF pF pF Ω nC nC nC nC ns ns ns ns Test Condition VDS = -10V, VGS = 0V, f = 1.0MHz VDS = 0V, VGS = 0V, f = 1MHz VGS = -8V, VDS = -15V, ID = -1A VGS = -4.5V, VDS = -15V, ID = -1A VDS = -10V, -ID = 1A VGS = -4.5V, RG = 6Ω 7. Short duration pulse test used to minimize self-heating effect. 8. Guarantee by design. 2.0 2.0 VGS = -4.5V VGS = -4.0V VGS = -2.5V 1.5 -ID, DRAIN CURRENT (A) -ID, DRAIN CURRENT (A) VGS = -3.0V VGS = -2.0V 1.0 VGS = -1.8V 0.5 VGS = -1.5V 1.5 VDS = -5V 1.0 0.5 TA = 150°C T A = 125°C VGS = -1.2V 0 0 1 2 3 4 -VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 4 Typical Output Characteristic DMP21D0UFD Datasheet Number: DS35364 Rev. 4 - 2 0 5 4 of 8 www.diodes.com TA = 85°C TA = 25°C T A = -55°C 0 0.5 1.0 1.5 2.0 2.5 -VGS, GATE-SOURCE VOLTAGE (V) Fig. 5 Typical Transfer Characteristic 3.0 March 2012 © Diodes Incorporated A Product Line of Diodes Incorporated RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) 1.0 VGS = -1.5V 0.8 VGS = -1.8V 0.6 VGS = -2.5V 0.4 VGS = -4.5V 0.2 0 0 0.4 0.8 1.2 1.6 -ID, DRAIN-SOURCE CURRENT (A) Fig. 6 Typical On-Resistance vs. Drain Current and Gate Voltage 2.0 1.2 TA = 150°C VGS = -1.8V 1.0 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) DMP21D0UFD TA = 125°C 0.8 TA = 85°C 0.6 TA = 25°C 0.4 TA = -55°C 0.2 0 0 0.1 0.2 0.3 0.4 0.5 0.6 -ID, DRAIN CURRENT (A) Fig. 8 Typical On-Resistance vs. Drain Current and Temperature 0.7 RDSON, DRAIN-SOURCE ON-RESISTANCE (Ω) RDSON, DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) 1.7 VGS = 5.0V ID = 500mA 1.5 VGS = 2.5V ID = 250mA 1.3 VGS = -1.5V ID = -50mA 1.1 VGS = -1.8V ID = -100mA 0.9 0.7 0.5 -50 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Fig. 10 On-Resistance Variation with Temperature DMP21D0UFD Datasheet Number: DS35364 Rev. 4 - 2 5 of 8 www.diodes.com 1.0 VGS = -4.5V 0.8 0.6 TA = 150°C T A = 125°C 0.4 T A = 85°C TA = 25°C 0.2 0 TA = -55°C 0 0.2 0.4 0.6 0.8 -ID, DRAIN CURRENT (A) Fig. 7 Typical On-Resistance vs. Drain Current and Temperature 1.0 1.6 T A = 150°C VGS = -1.5V 1.4 TA = 125°C 1.2 T A = 85°C 1.0 TA = 25°C 0.8 TA = -55°C 0.6 0.4 0.2 0 0 0.1 0.2 0.3 0.4 0.5 -ID, DRAIN CURRENT (A) Fig. 9 Typical On-Resistance vs. Drain Current and Temperature 0.6 1 0.9 VGS = -1.5V ID = -50mA 0.8 0.7 0.6 0.5 VGS = 2.5V ID = 250mA 0.4 VGS = 5.0V ID = -500mA 0.3 0.2 0.1 0 -50 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Fig. 11 On-Resistance Variation with Temperature March 2012 © Diodes Incorporated A Product Line of Diodes Incorporated DMP21D0UFD 2.0 1.8 1.2 -IS, SOURCE CURRENT (A) -VGS(TH), GATE THRESHOLD VOLTAGE (V) 1.4 1.0 ID = -1mA 0.8 0.6 ID = -250µA 0.4 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0.4 10,000 IGSS, LEAKAGE CURRENT (nA) 1,000 T A = 150°C TA = 125°C 100 TA = 85°C 10 1 0.6 0.8 1.0 1.2 -VSD, SOURCE-DRAIN VOLTAGE (V) Fig. 13 Diode Forward Voltage vs. Current 100,000 10,000 0 TA = 125°C 100 T A = 25°C TA = -55°C 1 0.1 0 8 12 16 20 -VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 14 Typical Leakage Current vs. Drain-Source Voltage 2 4 6 8 VGS, GATE-SOURCE VOLTAGE (V) Fig.15 Leakage Current vs. Gate-Source Voltage CT, JUNCTION CAPACITANCE (pF) 1,000 10,000 TA = 150°C TA = 125°C 1,000 100 TA = 85°C TA = 25°C 10 T A = -55°C 1 0.1 T A = 85°C 10 4 100,000 T A = 150°C 1,000 T A = 25°C IGSS, LEAKAGE CURRENT (nA) TA = 25°C 0.2 0 -50 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Fig. 12 Gate Threshold Variation vs. Ambient Temperature -IDSS, LEAKAGE CURRENT (nA) 1.6 0 2 4 6 8 VGS, GATE-SOURCE VOLTAGE (V) Fig.16 Leakage Current vs. Gate-Source Voltage DMP21D0UFD Datasheet Number: DS35364 Rev. 4 - 2 6 of 8 www.diodes.com f = 1MHz 100 Ciss Coss 10 Crss 1 0 2 4 6 8 10 12 14 16 18 20 -VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 17 Typical Junction Capacitance March 2012 © Diodes Incorporated A Product Line of Diodes Incorporated DMP21D0UFD -VGS, GATE-SOURCE VOLTAGE (V) 8 7 6 5 4 3 2 1 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 Qg, TOTAL GATE CHARGE (nC) Fig. 18 Gate-Charge Characteristics Package Outline Dimensions A X1-DFN1212-3 Dim Min Max Typ A 0.47 0.53 0.50 A1 0 0.05 0.02 A3 0.13 b 0.27 0.37 0.32 b1 0.17 0.27 0.22 D 1.15 1.25 1.20 E 1.15 1.25 1.20 e 0.80 L 0.25 0.35 0.30 All Dimensions in mm A3 A1 D e b1 (2x) E L b Suggested Pad Layout X Y X1 (2x) Y2 Y1 (2x) Dimensions C X X1 Y Y1 Y2 Value (in mm) 0.80 0.42 0.32 0.50 0.50 1.50 C DMP21D0UFD Datasheet Number: DS35364 Rev. 4 - 2 7 of 8 www.diodes.com March 2012 © Diodes Incorporated A Product Line of Diodes Incorporated DMP21D0UFD IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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