MCP1406 DATA SHEET (04/25/2016) DOWNLOAD

MCP1406/07
6A High-Speed Power MOSFET Drivers
Features
General Description
• High Peak Output Current: 6.0A (typical)
• Low Shoot-Through/Cross-Conduction Current in
Output Stage
• Wide Input Supply Voltage Operating Range:
- 4.5V to 18V
• High Capacitive Load Drive Capability:
- 2500 pF in 20 ns
- 6800 pF in 40 ns
• Short Delay Times: 40 ns (typical)
• Matched Rise/Fall Times
• Low Supply Current:
- With Logic ‘1’ Input – 130 µA (typical)
- With Logic ‘0’ Input – 35 µA (typical)
• Latch-Up Protected: Will Withstand 1.5A Reverse
Current
• Logic Input Will Withstand Negative Swing up to 5V
• Pin compatible with the TC4420/TC4429 devices
• Space-saving 8-Pin SOIC, PDIP and
8-Pin 6 x 5 mm DFN Packages
The MCP1406/07 devices are a family of
buffers/MOSFET drivers that feature a single-output
with 6A peak drive current capability, low shoot-through
current, matched rise/fall times and propagation delay
times. These devices are pin-compatible and are
improved versions of the TC4420/TC4429 MOSFET
drivers.
Applications
•
•
•
•
Switch Mode Power Supplies
Pulse Transformer Drive
Line Drivers
Motor and Solenoid Drive
 2006-2016 Microchip Technology Inc.
The MCP1406/07 MOSFET drivers can easily charge
and discharge 2500 pF gate capacitance in under
20 ns, provide low enough impedances (in both the ON
and OFF states) to ensure that intended state of the
MOSFETs will not be affected, even by large transients.
The input to the MCP1406/07 may be driven directly
from either TTL or CMOS (3V to 18V).
These devices are highly latch-up resistant under any
conditions that fall within their power and voltage
ratings. They are not subject to damage when up to 5V
of noise spiking (of either polarity) occurs on the ground
pin. All terminals are fully protected against
electrostatic discharge (ESD), up to 2.0 kV (HBM) and
400V (MM).
The MCP1406/07 single-output 6A MOSFET driver
family is offered in both surface-mount and
pin-through-hole packages with a -40°C to +125°C
temperature rating, making it useful in any wide
temperature range application.
DS20002019C-page 1
MCP1406/07
Package Types
8-Pin PDIP/SOIC
MCP1406
MCP1407
VDD 1
8 VDD
VDD 1
INPUT 2
7 OUT
INPUT 2
NC 3
6 OUT
NC 3
GND 4
5 GND
GND 4
8 VDD
7 OUT
6
OUT
5 GND
8-Pin 6x5 DFN-S(2)
MCP1407
MCP1406
VDD 1
INPUT 2
NC 3
GND 4
EP
9
8 VDD
VDD 1
7 OUT
INPUT 2
6 OUT
5 GND
NC 3
GND 4
8 VDD
7 OUT
EP
9
6 OUT
5 GND
5-Pin TO-220
MCP1406
MCP1407
Tab is common to VDD
GND
OUT
1 2 3 4 5
INPUT
GND
VDD
GND
OUT
INPUT
GND
VDD
1 2 3 4 5
Note 1: Duplicate pins must both be connected for proper operation.
2: Exposed pad of the DFN package is electrically isolated; see Table 3-1.
DS20002019C-page 2
 2006-2016 Microchip Technology Inc.
MCP1406/07
Functional Block Diagram(1)
VDD
Inverting
130 µA
300 mV
Output
Output
Non-Inverting
Input
Effective
Input C = 25 pF
4.7V
MCP1406 Inverting
MCP1407 Non-Inverting
GND
Note 1: Unused inputs should be grounded.
 2006-2016 Microchip Technology Inc.
DS20002019C-page 3
MCP1406/07
1.0
ELECTRICAL
CHARACTERISTICS
† Notice: Stresses above those listed under “Maximum
Ratings” may cause permanent damage to the device.
This is a stress rating only and functional operation of
the device at those or any other conditions above those
indicated in the operational sections of this
specification is not intended. Exposure to maximum
rating conditions for extended periods may affect
device reliability.
Absolute Maximum Ratings †
Supply Voltage ................................................................+20V
Input Voltage ..................................(VDD +0.3V) to (GND -5V)
Input Current (VIN > VDD) ..............................................50 mA
Package Power Dissipation (TA <= +70°C)
DFN-S .......................................................................2.5W
PDIP..........................................................................1.2W
SOIC .......................................................................0.83W
TO-220 ......................................................................3.9W
ESD Protection on all Pins ................2 kV (HBM), 400V (MM)
DC CHARACTERISTICS
Electrical Specifications: Unless otherwise indicated, TA = +25°C, with 4.5VVDD18V.
Parameters
Sym.
Min.
Typ.
Max.
Units
Conditions
Logic ‘1’, High Input Voltage
VIH
2.4
1.8
—
V
Logic ‘0’, Low Input Voltage
VIL
—
1.3
0.8
V
Input Current
IIN
–10
—
10
µA
Input Voltage
VIN
-5
—
VDD + 0.3
V
High Output Voltage
VOH
VDD – 0.025
—
—
V
DC Test
Low Output Voltage
VOL
—
—
0.025
V
DC Test
Output Resistance, High
ROH
—
2.1
2.8

IOUT = 10 mA, VDD = 18V
Output Resistance, Low
ROL
—
1.5
2.5

IOUT = 10 mA, VDD = 18V
Peak Output Current
IPK
—
6
—
A
VDD  18V (Note 1)
Continuous Output Current
IDC
1.3
A
Note 1, Note 2
Latch-Up Protection Withstand
Reverse Current
IREV
—
1.5
—
A
Duty cycle2%, t 300 µs
Rise Time
tR
—
20
30
ns
Figure 4-1, Figure 4-2
CL = 2500 pF
Fall Time
tF
—
20
30
ns
Figure 4-1, Figure 4-2
CL = 2500 pF
Delay Time
tD1
—
40
55
ns
Figure 4-1, Figure 4-2
Delay Time
tD2
—
40
55
ns
Figure 4-1, Figure 4-2
VDD
4.5
—
18.0
V
IS
—
130
250
µA
VIN = 3V
IS
—
35
100
µA
VIN = 0V
Input
0VVINVDD
Output
Switching Time (Note 3)
Power Supply
Supply Voltage
Power Supply Current
Note 1:
2:
3:
Tested during characterization, not production tested.
Valid for AT (TO-220) and MF (DFN-S) packages only. TA = +25°C
Switching times ensured by design.
DS20002019C-page 4
 2006-2016 Microchip Technology Inc.
MCP1406/07
DC CHARACTERISTICS (OVER OPERATING TEMPERATURE RANGE)
Electrical Specifications: Unless otherwise indicated, operating temperature range with 4.5V VDD18V.
Parameters
Sym.
Min.
Typ.
Max.
Units
Conditions
Logic ‘1’, High Input Voltage
VIH
2.4
—
—
V
Logic ‘0’, Low Input Voltage
VIL
—
—
0.8
V
Input Current
IIN
-10
—
+10
µA
Input Voltage
VIN
-5
—
VDD+0.3
V
High Output Voltage
VOH
VDD – 0.025
—
—
V
DC TEST
Low Output Voltage
VOL
—
—
0.025
V
DC TEST
Output Resistance, High
ROH
—
3.0
5.0

IOUT = 10 mA, VDD = 18V
Output Resistance, Low
ROL
—
2.3
5.0

IOUT = 10 mA, VDD = 18V
Rise Time
tR
—
25
40
ns
Figure 4-1, Figure 4-2
CL = 2500 pF
Fall Time
tF
—
25
40
ns
Figure 4-1, Figure 4-2
CL = 2500 pF
Delay Time
tD1
—
50
65
ns
Figure 4-1, Figure 4-2
Delay Time
tD2
—
50
65
ns
Figure 4-1, Figure 4-2
VDD
4.5
—
18.0
V
IS
—
200
500
µA
—
50
150
Input
0VVINVDD
Output
Switching Time (Note 1)
Power Supply
Supply Voltage
Power Supply Current
Note 1:
VIN = 3V
VIN = 0V
Switching times ensured by design.
 2006-2016 Microchip Technology Inc.
DS20002019C-page 5
MCP1406/07
TEMPERATURE CHARACTERISTICS
Electrical Specifications: Unless otherwise noted, all parameters apply with 4.5V  VDD  18V.
Parameters
Sym.
Min.
Typ.
Max.
Units
Conditions
Temperature Ranges
Specified Temperature Range
TA
-40
—
+125
°C
Maximum Junction Temperature
TJ
—
—
+150
°C
Storage Temperature Range
TA
-65
—
+150
°C
Junction-to-Ambient Thermal Resistance,
8-L 6x5 DFN
JA
—
31.8
—
°C/W
Note 1
Junction-to-Ambient Thermal Resistance, 8-L PDIP
JA
—
65.2
—
°C/W
Note 1
Junction-to-Ambient Thermal Resistance, 8-L SOIC
JA
—
96.3
—
°C/W
Note 1
Junction-to-Ambient Thermal Resistance,
5-L TO-220
JA
—
20.1
—
°C/W
Note 1
JC(BOT)
3.2
—
°C/W
Note 2
Junction-to-Top Characterization Parameter,
8-L 6x5 DFN
JT
0.2
—
°C/W
Note 1
Junction-to-Top Characterization Parameter,
8-L PDIP
JT
8.8
—
°C/W
Note 1
Junction-to-Top Characterization Parameter,
8-L SOIC
JT
3.2
—
°C/W
Note 1
Junction-to-Top Characterization Parameter,
5-L TO-220
JT
3.6
—
°C/W
Note 1
Junction-to-Board Characterization Parameter,
8-L 6x5 DFN
JB
15.5
—
°C/W
Note 1
Junction-to-Board Characterization Parameter,
8-L PDIP
JB
36.1
—
°C/W
Note 1
Junction-to-Board Characterization Parameter,
8-L SOIC
JB
60.7
—
°C/W
Note 1
Junction-to-Board Characterization Parameter,
5-L TO-220
JB
4.0
—
°C/W
Note 1
Package Thermal Resistances
Junction-to-Case (Bottom) Thermal Resistance,
5-L TO-220
Note 1:
2:
Parameter is determined using a High 2S2P 4-layer board, as described in JESD 51-7, as well as in JESD
51-5, for packages with exposed pads.
Parameter is determined using a 1S0P 2-layer board with a cold plate attached to indicated location.
DS20002019C-page 6
 2006-2016 Microchip Technology Inc.
MCP1406/07
2.0
TYPICAL PERFORMANCE CURVES
Note:
The graphs and tables provided following this note are a statistical summary based on a limited number of
samples and are provided for informational purposes only. The performance characteristics listed herein
are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified
operating range (e.g., outside specified power supply range) and therefore outside the warranted range.
Note: Unless otherwise indicated, TA = +25°C with 4.5V VDD 18V.
80
120
10,000 pF
8,200 pF
4,700 pF
2,500 pF
80
1,000 pF
6,800 pF
60
40
20
60
2,500 pF
50
6
8
FIGURE 2-1:
Voltage.
10
12
14
16
30
20
18
100 pF
4
6
8
FIGURE 2-4:
Voltage.
Rise Time vs. Supply
80
70
70
60
60
10V
50
40
15V
30
5V
20
10
12
14
16
18
Supply Voltage (V)
Fall Time (ns)
Rise Time (ns)
6,800 pF
40
Supply Voltage (V)
Fall Time vs. Supply
5V
50
10V
40
30
20
15V
10
10
0
100
1000
0
100
10000
1000
Capacitive Load (pF)
FIGURE 2-2:
Load.
10000
Capacitive Load (pF)
Rise Time vs. Capacitive
FIGURE 2-5:
Load.
Fall Time vs. Capacitive
85
VDD = 18V
tRISE
25
20
tFALL
15
10
5
0
Propagation Delay (ns)
Rise and Fall Time (ns)
4,700 pF
0
4
30
8,200 pF
1,000 pF
10
100 pF
0
10,000 pF
70
Fall Time (ns)
Rise Time (ns)
100
VIN = 5V
tD1
75
65
tD2
55
45
35
-40 -25 -10
5
20 35 50 65 80 95 110 125
4
6
Rise and Fall Times vs.
 2006-2016 Microchip Technology Inc.
10
12
14
16
18
Supply Voltage (V)
o
Temperature ( C)
FIGURE 2-3:
Temperature.
8
FIGURE 2-6:
Supply Voltage.
Propagation Delay vs.
DS20002019C-page 7
MCP1406/07
Note: Unless otherwise indicated, TA = +25°C with 4.5V VDD  18V.
250
VDD = 12V
175
Quiescent Current (µA)
Propagation Delay (ns)
200
150
tD1
125
100
75
50
tD2
Input = High
150
100
Input = Low
50
0
25
2
VDD = 18V
200
3
4
5
6
7
8
9
-40 -25 -10
10
5
o
Input Amplitude (V)
FIGURE 2-7:
Input Amplitude.
Propagation Delay Time vs.
VDD = 18V
VIN = 5V
50
45
tD2
40
tD1
35
FIGURE 2-10:
Temperature.
Input Threshold (V)
Propagation Delay (ns)
55
30
-40 -25 -10
5
Quiescent Current vs.
2
1.9
1.8
1.7
1.6
1.5
1.4
1.3
1.2
1.1
1
20 35 50 65 80 95 110 125
VHI
VLO
4
6
8
o
Propagation Delay Time vs.
FIGURE 2-11:
Voltage.
160
140
INPUT = 1
Input Threshold (V)
Quiescent Current (µA)
180
120
100
80
60
40
INPUT = 0
20
0
4
6
8
10
12
14
16
18
2
1.9
1.8
1.7
1.6
1.5
1.4
1.3
1.2
1.1
1
DS20002019C-page 8
12
14
16
18
Quiescent Current vs.
Input Threshold vs. Supply
VDD = 12V
VHI
VLO
-40 -25 -10
Supply Voltage (V)
FIGURE 2-9:
Supply Voltage.
10
Supply Voltage (V)
Temperature ( C)
FIGURE 2-8:
Temperature.
20 35 50 65 80 95 110 125
Temperature ( C)
5
20 35 50 65 80 95 110 125
Temperature (oC)
FIGURE 2-12:
Temperature.
Input Threshold vs.
 2006-2016 Microchip Technology Inc.
MCP1406/07
Note: Unless otherwise indicated, TA = +25°C with 4.5VVDD 18V.
150
120
1 MHz
100
50 kHz
75
50
Supply Current (mA)
Supply Current (mA)
VDD = 18V
125
100 kHz
500 kHz
200 kHz
25
0
100
VDD = 18V
6,800 pF
80
1,000 pF
60
2,500 pF
40
4,700 pF
20
100 pF
0
1000
10
10000
FIGURE 2-16:
Frequency.
Supply Current vs.
80
VDD = 12V
2 MHz
125
100
1 MHz
50 kHz
100 kHz
75
50
200 kHz
500 kHz
25
0
100
Supply Current (mA)
Supply Current (mA)
150
70
10,000 pF
6,800 pF
60
1,000 pF
50
40
4,700 pF
30
20
2,500 pF
10
100 pF
1000
10
10000
100
1000
Frequency (kHz)
FIGURE 2-17:
Frequency.
Supply Current vs.
40
2 MHz
100 kHz
35
1 MHz
50 kHz
200 kHz
Supply Current vs.
VDD = 6V
10,000 pF
6,800 pF
30
25
4,700 pF
20
1,000 pF
15
10
2,500 pF
5
100 pF
0
1000
10000
10
Supply Current vs.
 2006-2016 Microchip Technology Inc.
100
1000
Frequency (kHz)
Capacitive Load (pF)
FIGURE 2-15:
Capacitive Load.
Supply Current vs.
0
Supply Current (mA)
Supply Current (mA)
100
VDD = 6V
90
80
70
60
50
40
30
500 kHz
20
10
0
100
1000
VDD = 12V
Capacitive Load (pF)
FIGURE 2-14:
Capacitive Load.
100
Frequency (kHz)
Capacitive Load (pF)
FIGURE 2-13:
Capacitive Load.
10,000 pF
100
FIGURE 2-18:
Frequency.
Supply Current vs.
DS20002019C-page 9
MCP1406/07
Note: Unless otherwise indicated, TA = +25°C with 4.5V VDD 18V.
7
ROUT-HI (:)
VIN = 2.5V (MCP1407)
VIN = 0V (MCP1406)
TJ = +125oC
6
5
4
3
TJ = +25oC
2
1
4
6
8
10
12
14
16
18
Supply Voltage (V)
FIGURE 2-19:
Output Resistance
(Output High) vs. Supply Voltage.
7
VIN = 0V (MCP1407)
VIN = 2.5V (MCP1406)
ROUT-LO (:)
6
5
TJ = +125oC
4
3
2
TJ = +25oC
1
4
6
8
10
12
14
16
18
16
18
Supply Voltage (V)
FIGURE 2-20:
Output Resistance
(Output Low) vs. Supply Voltage.
Crossover Energy (nA ∗ sec)
100.00
10.00
1.00
4
6
FIGURE 2-21:
Supply Voltage.
DS20002019C-page 10
8
10
12
14
Supply Voltage (V)
Crossover Energy vs.
 2006-2016 Microchip Technology Inc.
MCP1406/07
3.0
PIN DESCRIPTIONS
The descriptions of the pins are listed in Table 3-1.
TABLE 3-1:
PIN FUNCTION TABLE(1)
5-Pin
TO-220
8-Pin
6x5 DFN
8-Pin
PDIP, SOIC
Symbol
—
1
1
VDD
Supply Input
1
2
2
INPUT
Control Input
—
3
3
NC
2
4
4
GND
Ground
4
5
5
GND
Ground
5
6
6
OUTPUT
CMOS Push-Pull Output
—
7
7
OUTPUT
CMOS Push-Pull Output
3
8
8
VDD
Supply Input
—
9
—
EP
Exposed Metal Pad
TAB
—
—
VDD
Metal Tab at VDD Potential
Note 1:
3.1
Description
No Connection
Duplicate pins must be connected for proper operation.
Supply Input (VDD)
3.5
Exposed Metal Pad (6x5 DFN only)
VDD is the bias supply input for the MOSFET driver and
has a voltage range of 4.5V to 18V. This input must be
decoupled to ground with local capacitors. The bypass
capacitors provide a localized low-impedance path for
the peak currents that are to be provided to the load.
The exposed metal pad of the DFN package is not
internally connected to any potential. Therefore, this
pad can be connected to a ground plane or other
copper plane on a printed circuit board to aid in heat
removal from the package.
3.2
3.6
Control Input (INPUT)
The MOSFET driver input is a high-impedance,
TTL/CMOS-compatible input. The input also has hysteresis between the high and low input levels, allowing
them to be driven from slow rising and falling signals,
and to provide noise immunity.
3.3
TO-220 Metal Tab
The metal tab on the TO-220 package is at VDD
potential. This metal tab is not intended to be the VDD
connection to MCP1406/07. VDD should be supplied
using the Supply Input pin of the TO-220.
Ground (GND)
Ground is the device return pin. The ground pin should
have a low impedance connection to the bias supply
source return. High peak currents will flow out the
ground pin when the capacitive load is being
discharged.
3.4
CMOS Push-Pull Output
(OUTPUT)
The output is a CMOS push-pull output that is capable
of sourcing peak currents of 6A (VDD = 18V). The low
output impedance ensures the gate of the external
MOSFET will stay in the intended state even during
large transients. The output pins also have reverse
current latch-up ratings of 1.5A.
 2006-2016 Microchip Technology Inc.
DS20002019C-page 11
MCP1406/07
4.0
APPLICATION INFORMATION
4.1
General Information
VDD = 18V
MOSFET drivers are high-speed, high current devices
which are intended to provide high peak currents to
charge the gate capacitance of external MOSFETs or
IGBTs. In high frequency switching power supplies, the
PWM controller may not have the drive capability to
directly drive the power MOSFET. A MOSFET driver
like the MCP1406/07 family can be used to provide
additional drive current capability.
1 µF
Input
0.1 µF
Ceramic
Output
CL = 2500 pF
MCP1407
4.2
MOSFET Driver Timing
The ability of a MOSFET driver to transition from a
fully-OFF state to a fully-ON state are characterized by
the drivers’ rise time (tR), fall time (tF) and propagation
delays (tD1 and tD2). The MCP1406/07 family of
devices is able to make this transition very quickly.
Figure 4-1 and Figure 4-2 show the test circuits and
timing waveforms used to verify the MCP1406/07
timing.
+5V
90%
Input
0V
10%
18V
tD1 90%
Output
1 µF
Input
0.1 µF
Ceramic
FIGURE 4-2:
Waveform.
MCP1406
4.3
90%
10%
18V
tD1
tF
tD2
tR
90%
90%
Output
10%
0V
10%
Input Signal: tRISE = tFALL = 10ns,
100 Hz, 0-5V Square Wave
FIGURE 4-1:
Waveform.
DS20002019C-page 12
10%
Non-Inverting Driver Timing
Decoupling Capacitors
Careful layout and decoupling capacitors are highly
recommended when using MOSFET drivers. Large
currents are required to charge and discharge
capacitive loads quickly. For example, 2.25A are
needed to charge a 2500 pF load with 18V in 20 ns.
Input
0V
tF
Input Signal: tRISE = tFALL = 10ns,
100 Hz, 0-5V Square Wave
Output
CL = 2500 pF
+5V
90%
tD2
10%
0V
VDD = 18V
tR
To operate the MOSFET driver over a wide frequency
range with low supply impedance, a ceramic and a
low ESR film capacitor are recommended to be placed
in parallel between the driver VDD and the GND. A
1.0 µF low ESR film capacitor and a 0.1 µF
ceramic capacitor placed between pins 1, 8 and 4, 5
should be used. These capacitors should be placed
close to the driver to minimize circuit board parasitics
and provide a local source for the required current.
Inverting Driver Timing
 2006-2016 Microchip Technology Inc.
MCP1406/07
4.4
PCB Layout Considerations
Proper PCB layout is important in a high current,
fast switching circuit to provide proper device operation
and robustness of design. PCB trace loop area and
inductance should be minimized by the use of a ground
plane or ground trace located under the MOSFET gate
drive signals, separate analog and power grounds, and
local driver decoupling.
The MCP1406/07 devices have two pins each for VDD,
OUTPUT and GND. Both pins must be used for proper
operation. This also lowers path inductance which will,
along with proper decoupling, help minimize ringing in
the circuit.
Placing a ground plane beneath the MCP1406/07 will
help as a radiated noise shield as well as providing
some heat sinking for power dissipated within the
device.
4.5
Power Dissipation
4.5.2
QUIESCENT POWER DISSIPATION
The power dissipation associated with the quiescent
current draw depends on the state of the input pin. The
MCP1406/07 devices have a quiescent current draw
when the input is high of 0.13 mA (typ) and 0.035 mA
(typ) when the input is low. The quiescent power dissipation can be determined by using this equation:
EQUATION 4-3:
P Q =  I QH  D + I QL   1 – D    V DD
Where:
IQH =
D = Duty cycle
IQL = Quiescent current in the low state
VDD = MOSFET driver supply voltage
4.5.3
The total internal power dissipation in a MOSFET driver
is the summation of three separate power dissipation
elements, which can be calculated by using the
following equation:
EQUATION 4-1:
P T = P L + P Q + P CC
OPERATING POWER DISSIPATION
The operating power dissipation occurs each time the
MOSFET driver output transitions; this is because, for
a very short period of time, both MOSFETs in the output
stage are ON simultaneously. This cross-conduction
current leads to a power dissipation, as described by
the following equation:
EQUATION 4-4:
Where:
P CC = CC  f  V DD
PT
=
Total power dissipation
PL
=
Load power dissipation
PQ
=
Quiescent power dissipation
PCC
=
Operating power dissipation
4.5.1
Quiescent current in the high state
Where:
CC
=
Cross-conduction constant (A sec.)
f
=
Switching frequency
VDD
=
MOSFET driver supply voltage
CAPACITIVE LOAD DISSIPATION
The power dissipation caused by a capacitive load is a
direct function of frequency, total capacitive load and
supply voltage. The power lost in the MOSFET driver
for a complete charging and discharging cycle of a
MOSFET can be determined by means of this
equation:
EQUATION 4-2:
P L = f  C T  V DD
2
Where:
f
CT
VDD
=
Switching frequency
= Total load capacitance
=
MOSFET driver supply voltage
 2006-2016 Microchip Technology Inc.
DS20002019C-page 13
MCP1406/07
5.0
PACKAGING INFORMATION
5.1
Package Marking Information (Not to Scale)
8-Lead SOIC (3.90 mm)
MCP1406E
e3
SN ^^1510
256
NNN
5-Lead TO-220
Example
MCP1406
e3
EAT ^^
15102562
XXXXXXXXX
XXXXXXXXX
YYWWNNN
8-Lead DFN-S (6x5x0.9 mm)
NNN
PIN 1
e3
*
DS20002019C-page 14
Example
MCP1406
e3
E/MF ^^
1510
256
PIN 1
Legend: XX...X
Y
YY
WW
NNN
Note:
Example
Customer-specific information
Year code (last digit of calendar year)
Year code (last 2 digits of calendar year)
Week code (week of January 1 is week ‘01’)
Alphanumeric traceability code
Pb-free JEDEC designator for Matte Tin (Sn)
This package is Pb-free. The Pb-free JEDEC designator ( e3 )
can be found on the outer packaging for this package.
In the event the full Microchip part number cannot be marked on one line, it will
be carried over to the next line, thus limiting the number of available
characters for customer-specific information.
 2006-2016 Microchip Technology Inc.
MCP1406/07
8-Lead PDIP (300 mil)
XXXXXXXX
XXXXXNNN
YYWW
Legend: XX...X
Y
YY
WW
NNN
e3
*
Note:
Example
MCP1407
e3
E/P ^^256
1510
Customer-specific information
Year code (last digit of calendar year)
Year code (last 2 digits of calendar year)
Week code (week of January 1 is week ‘01’)
Alphanumeric traceability code
Pb-free JEDEC designator for Matte Tin (Sn)
This package is Pb-free. The Pb-free JEDEC designator ( e3 )
can be found on the outer packaging for this package.
In the event the full Microchip part number cannot be marked on one line, it will
be carried over to the next line, thus limiting the number of available
characters for customer-specific information.
 2006-2016 Microchip Technology Inc.
DS20002019C-page 15
MCP1406/07
/# #$#
0!. 1
#
20
%##!#
##
,33...
3
0
A
E
φP
CHAMFER
OPTIONAL
A1
Q
H1
D
D1
L
1
N
2 3
e
b
e1
c
A2
4#
7#
5$:%2
5+6"
5
5
58
9
'
2#
*+
8-22#
;*+
8-6#
<
8-=!#
"
>;
<
8-7#
'
<
'
!!207#
>>
<
>''
:7#
6
<
>
:0
<
''
$#6+#
?
<
$#6#
2
>
<
'
7
;
<
'
;
<
'
<
'
7!7#
* #*##%7!
7!0
7!=!#
:
'
!"!#$!!% #$ !% #$ #&!'(
!
!#
")'
*+, * #&#-$ ..#$## . +>*
DS20002019C-page 16
 2006-2016 Microchip Technology Inc.
MCP1406/07
!"#$ %&'(()* +
/# #$#
0!. 1
#
20
%##!#
##
,33...
3
0
e
D
L
b
N
N
K
E2
E
EXPOSED PAD
NOTE 1
1
2
2
NOTE 1
1
D2
BOTTOM VIEW
TOP VIEW
A
A3
A1
NOTE 2
4#
7#
5$:%2
77""
5
5
58
9
;
2#
8-6#
;
*+
;'
#!%%
'
+##0
>
"/
8-7#
'*+
8-=!#
"
"&
!2!7#
>
"&
!2!=!#
"
>
+##=!#
:
>'
;
+##7#
7
'
'
*+
+###"&
!2!
@
<
2- $!&%#$-1:$#$ #:#!.###!
20-&
!#: #! > 20 . $#!
!#
")'
*+, * #&#-$ ..#$## "/, % 1$ $.#$##1%%#
$
<
. +*
 2006-2016 Microchip Technology Inc.
DS20002019C-page 17
MCP1406/07
/# #$#
0!. 1
#
20
%##!#
##
,33...
3
0
DS20002019C-page 18
 2006-2016 Microchip Technology Inc.
MCP1406/07
8-Lead Plastic Dual In-Line (P) - 300 mil Body [PDIP]
Note:
For the most current package drawings, please see the Microchip Packaging Specification located at
http://www.microchip.com/packaging
D
A
N
B
E1
NOTE 1
1
2
TOP VIEW
E
C
A2
A
PLANE
L
A1
e
c
eB
8X b1
8X b
.010
C
SIDE VIEW
END VIEW
Microchip Technology Drawing No. C04-018D Sheet 1 of 2
 2006-2016 Microchip Technology Inc.
DS20002019C-page 19
MCP1406/07
8-Lead Plastic Dual In-Line (P) - 300 mil Body [PDIP]
Note:
For the most current package drawings, please see the Microchip Packaging Specification located at
http://www.microchip.com/packaging
ALTERNATE LEAD DESIGN
(VENDOR DEPENDENT)
DATUM A
DATUM A
b
b
e
2
e
2
e
Units
Dimension Limits
Number of Pins
N
e
Pitch
Top to Seating Plane
A
Molded Package Thickness
A2
Base to Seating Plane
A1
Shoulder to Shoulder Width
E
Molded Package Width
E1
Overall Length
D
Tip to Seating Plane
L
c
Lead Thickness
Upper Lead Width
b1
b
Lower Lead Width
Overall Row Spacing
eB
§
e
MIN
.115
.015
.290
.240
.348
.115
.008
.040
.014
-
INCHES
NOM
8
.100 BSC
.130
.310
.250
.365
.130
.010
.060
.018
-
MAX
.210
.195
.325
.280
.400
.150
.015
.070
.022
.430
Notes:
1. Pin 1 visual index feature may vary, but must be located within the hatched area.
2. § Significant Characteristic
3. Dimensions D and E1 do not include mold flash or protrusions. Mold flash or
protrusions shall not exceed .010" per side.
4. Dimensioning and tolerancing per ASME Y14.5M
BSC: Basic Dimension. Theoretically exact value shown without tolerances.
Microchip Technology Drawing No. C04-018D Sheet 2 of 2
DS20002019C-page 20
 2006-2016 Microchip Technology Inc.
MCP1406/07
Note:
For the most current package drawings, please see the Microchip Packaging Specification located at
http://www.microchip.com/packaging
 2006-2016 Microchip Technology Inc.
DS20002019C-page 21
MCP1406/07
Note:
For the most current package drawings, please see the Microchip Packaging Specification located at
http://www.microchip.com/packaging
DS20002019C-page 22
 2006-2016 Microchip Technology Inc.
MCP1406/07
+(
+%,!-./(()*+01
/# #$#
0!. 1
#
20
%##!#
##
,33...
3
0
 2006-2016 Microchip Technology Inc.
DS20002019C-page 23
MCP1406/07
NOTES:
DS20002019C-page 24
 2006-2016 Microchip Technology Inc.
MCP1406/07
APPENDIX A:
REVISION HISTORY
Revision C (April 2016)
The following is the list of modifications:
• Updated the Package Thermal Resistances section of Temperature Characteristics table with the
latest information.
• Updated Figure 2-21 in Section 2.0 “Typical
Performance Curves”.
Revision B (May 2012)
The following is the list of modifications:
Removed the information referring to the
Electrostatic Discharge from the General
Description section.
Revision A (December 2006)
Original release of this document.
 2006-2016 Microchip Technology Inc.
DS20002019C-page 25
MCP1406/07
NOTES:
DS20002019C-page 26
 2006-2016 Microchip Technology Inc.
MCP1406/07
PRODUCT IDENTIFICATION SYSTEM
To order or obtain information, e.g., on pricing or delivery, refer to the factory or the listed sales office.
PART NO.
Device
X
Temperature
Range
XX
XXX
Package
Tape & Reel
Examples:
a)
b)
Device:
MCP1406:
6A High-Speed MOSFET Driver,
Inverting
MCP1406T: 6A High-Speed MOSFET Driver,
Inverting, Tape and Reel
MCP1407: 6A High-Speed MOSFET Driver,
Non-Inverting
MCP1407T: 6A High-Speed MOSFET Driver,
Non-Inverting, Tape and Reel
Temperature Range:
E
=
Package: *
AT
MF
= Plastic Transistor Outline, 5-Lead (TO-220)
= Plastic Dual Flat - 6x5 mm Body,
8-Lead (DFN-S)
= Plastic Dual In-Line - 300 mil Body,
8-Lead (PDIP)
= Plastic Small Outline - Narrow, 3.90 mm Body,
8-Lead (SOIC)
P
SN
-40°C to +125°C
* All package offerings are Pb Free (Lead Free)
c)
d)
e)
f)
a)
b)
c)
d)
e)
f)
 2006-2016 Microchip Technology Inc.
MCP1406-E/MF: 6A High-Speed MOSFET
Driver, Inverting,
8LD DFN Package
MCP1406-E/AT: 6A High-Speed MOSFET
Driver, Inverting,
5LD TO-220 Package
MCP1406-E/SN: 6A High-Speed MOSFET
Driver, Inverting,
8LD SOIC Package
MCP1406-E/P:
6A High-Speed MOSFET
Driver, Inverting,
8LD PDIP Package
MCP1406T-E/MF: Tape and Reel,
6A High-Speed MOSFET
Driver, Inverting,
8LD DFN Package
MCP1406T-E/SN: Tape and Reel,
6A High-Speed MOSFET
Driver, Inverting,
8LD SOIC Package
MCP1407-E/MF: 6A High-Speed MOSFET
Driver, Non-Inverting,
8LD DFN Package
MCP1407-E/AT: 6A High-Speed MOSFET
Driver, Non-Inverting,
5LD TO-220 Package
MCP1407-E/SN: 6A High-Speed MOSFET
Driver, Non-Inverting,
8LD SOIC Package
MCP1407-E/P:
6A High-Speed MOSFET
Driver, Non-Inverting,
8LD PDIP Package
MCP1407T-E/MF: Tape and Reel,
6A High-Speed MOSFET
Driver, Non-Inverting,
8LD DFN Package
MCP1407T-E/SN: Tape and Reel,
6A High-Speed MOSFET
Driver, Non-Inverting,
8LD SOIC Package
DS20002019C-page 27
MCP1406/07
NOTES:
DS20002019C-page 28
 2006-2016 Microchip Technology Inc.
Note the following details of the code protection feature on Microchip devices:
•
Microchip products meet the specification contained in their particular Microchip Data Sheet.
•
Microchip believes that its family of products is one of the most secure families of its kind on the market today, when used in the
intended manner and under normal conditions.
•
There are dishonest and possibly illegal methods used to breach the code protection feature. All of these methods, to our
knowledge, require using the Microchip products in a manner outside the operating specifications contained in Microchip’s Data
Sheets. Most likely, the person doing so is engaged in theft of intellectual property.
•
Microchip is willing to work with the customer who is concerned about the integrity of their code.
•
Neither Microchip nor any other semiconductor manufacturer can guarantee the security of their code. Code protection does not
mean that we are guaranteeing the product as “unbreakable.”
Code protection is constantly evolving. We at Microchip are committed to continuously improving the code protection features of our
products. Attempts to break Microchip’s code protection feature may be a violation of the Digital Millennium Copyright Act. If such acts
allow unauthorized access to your software or other copyrighted work, you may have a right to sue for relief under that Act.
Information contained in this publication regarding device
applications and the like is provided only for your convenience
and may be superseded by updates. It is your responsibility to
ensure that your application meets with your specifications.
MICROCHIP MAKES NO REPRESENTATIONS OR
WARRANTIES OF ANY KIND WHETHER EXPRESS OR
IMPLIED, WRITTEN OR ORAL, STATUTORY OR
OTHERWISE, RELATED TO THE INFORMATION,
INCLUDING BUT NOT LIMITED TO ITS CONDITION,
QUALITY, PERFORMANCE, MERCHANTABILITY OR
FITNESS FOR PURPOSE. Microchip disclaims all liability
arising from this information and its use. Use of Microchip
devices in life support and/or safety applications is entirely at
the buyer’s risk, and the buyer agrees to defend, indemnify and
hold harmless Microchip from any and all damages, claims,
suits, or expenses resulting from such use. No licenses are
conveyed, implicitly or otherwise, under any Microchip
intellectual property rights unless otherwise stated.
Microchip received ISO/TS-16949:2009 certification for its worldwide
headquarters, design and wafer fabrication facilities in Chandler and
Tempe, Arizona; Gresham, Oregon and design centers in California
and India. The Company’s quality system processes and procedures
are for its PIC® MCUs and dsPIC® DSCs, KEELOQ® code hopping
devices, Serial EEPROMs, microperipherals, nonvolatile memory and
analog products. In addition, Microchip’s quality system for the design
and manufacture of development systems is ISO 9001:2000 certified.
QUALITYMANAGEMENTSYSTEM
CERTIFIEDBYDNV
== ISO/TS16949==
 2006-2016 Microchip Technology Inc.
Trademarks
The Microchip name and logo, the Microchip logo, AnyRate,
dsPIC, FlashFlex, flexPWR, Heldo, JukeBlox, KEELOQ,
KEELOQ logo, Kleer, LANCheck, LINK MD, MediaLB, MOST,
MOST logo, MPLAB, OptoLyzer, PIC, PICSTART, PIC32 logo,
RightTouch, SpyNIC, SST, SST Logo, SuperFlash and UNI/O
are registered trademarks of Microchip Technology
Incorporated in the U.S.A. and other countries.
ClockWorks, The Embedded Control Solutions Company,
ETHERSYNCH, Hyper Speed Control, HyperLight Load,
IntelliMOS, mTouch, Precision Edge, and QUIET-WIRE are
registered trademarks of Microchip Technology Incorporated
in the U.S.A.
Analog-for-the-Digital Age, Any Capacitor, AnyIn, AnyOut,
BodyCom, chipKIT, chipKIT logo, CodeGuard, dsPICDEM,
dsPICDEM.net, Dynamic Average Matching, DAM, ECAN,
EtherGREEN, In-Circuit Serial Programming, ICSP, Inter-Chip
Connectivity, JitterBlocker, KleerNet, KleerNet logo, MiWi,
motorBench, MPASM, MPF, MPLAB Certified logo, MPLIB,
MPLINK, MultiTRAK, NetDetach, Omniscient Code
Generation, PICDEM, PICDEM.net, PICkit, PICtail,
PureSilicon, RightTouch logo, REAL ICE, Ripple Blocker,
Serial Quad I/O, SQI, SuperSwitcher, SuperSwitcher II, Total
Endurance, TSHARC, USBCheck, VariSense, ViewSpan,
WiperLock, Wireless DNA, and ZENA are trademarks of
Microchip Technology Incorporated in the U.S.A. and other
countries.
SQTP is a service mark of Microchip Technology Incorporated
in the U.S.A.
Silicon Storage Technology is a registered trademark of
Microchip Technology Inc. in other countries.
GestIC is a registered trademarks of Microchip Technology
Germany II GmbH & Co. KG, a subsidiary of Microchip
Technology Inc., in other countries.
All other trademarks mentioned herein are property of their
respective companies.
© 2006-2016, Microchip Technology Incorporated, Printed in
the U.S.A., All Rights Reserved.
ISBN: 978-1-5224-0450-7
DS20002019C-page 29
Worldwide Sales and Service
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Technical Support:
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Tel: 91-80-3090-4444
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Tel: 886-7-213-7828
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07/14/15
DS20002019C-page 30
 2006-2016 Microchip Technology Inc.