TC4420M/TC4429M 6A High-Speed MOSFET Drivers Features General Description • Latch-Up Protected: Will Withstand >1.5A Reverse Output Current • Logic Input: Will Withstand Negative Swing Up To 5V • ESD Protected: 4 kV • Matched Rise and Fall Times: - 25 ns (2500 pF load) • High Peak Output Current: 6A • Wide Input Supply Voltage Operating Range: - 4.5V to 18V • High Capacitive Load Drive Capability: 10,000 pF • Short Delay Time: 55 ns (typical) • CMOS/TTL-Compatible Input • Low Supply Current With Logic ‘1’ Input: - 450 µA (typical) • Low Output Impedance: 2.5 • Output Voltage Swing to Within 25 mV of Ground or VDD • Wide Operating Temperature Range: - -55°C to +125°C • See TC4420/TC4429 Data Sheet (DS21419) for additional temperature range and package offerings. The TC4420M/TC4429M are 6A (peak), single-output MOSFET drivers. The TC4429M is an inverting driver (pin-compatible with the TC429M), while the TC4420M is a non-inverting driver. These drivers are fabricated in CMOS for lower power and more efficient operation versus bipolar drivers. Both devices have TTL/CMOS-compatible inputs, which can be driven as high as VDD + 0.3V or as low as -5V without upset or damage to the device. This eliminates the need for external level-shifting circuitry and its associated cost and size. The output swing is rail-torail, ensuring better drive voltage margin, especially during power-up/power-down sequencing. The propagational delay time is only 55 ns (typical), while the output rise and fall times are only 25 ns (typical) into 2500 pF across the usable power supply range. Unlike other drivers, the TC4420M/TC4429M are virtually latch-up proof. They replace three or more discrete components, saving PCB area and parts while improving overall system reliability. Package Types: 8-Pin CERDIP TC4420M Applications • • • • Switch-mode Power Supplies Motor Controls Pulse Transformer Driver Class D Switching Amplifiers 8 VDD VDD 1 INPUT 2 7 OUTPUT NC 3 6 OUTPUT 5 GND GND 4 TC4429M VDD 1 7 OUTPUT NC 3 6 OUTPUT 5 GND GND 4 Note: 2005-2012 Microchip Technology Inc. 8 VDD INPUT 2 Duplicate pins must both be connected for proper operation. DS21933B-page 1 TC4420M/TC4429M Functional Block Diagram VDD 500 µA TC4429M Inverting 300 mV Output TC4420M Non-Inverting Input 4.7V GND Effective Input C = 38 pF DS21933B-page 2 2005-2012 Microchip Technology Inc. TC4420M/TC4429M 1.0 ELECTRICAL CHARACTERISTICS † Notice: Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other conditions above those indicated in the operation sections of the specifications is not implied. Exposure to Absolute Maximum Rating conditions for extended periods may affect device reliability. Absolute Maximum Ratings† Supply Voltage ..................................................... +20V Input Voltage ....................................-5V to VDD + 0.3V Input Current (VIN > VDD)................................... 50 mA DC CHARACTERISTICS Electrical Specifications: Unless otherwise noted, TA = +25°C with 4.5V VDD 18V. Parameters Sym Min Typ Max Units Logic ‘1’, High Input Voltage VIH 2.4 Logic ‘0’, Low Input Voltage VIL — Input Voltage Range Input Current Conditions 1.8 — V 1.3 0.8 V VIN -5 — VDD + 0.3 V IIN -10 — +10 µA 0VVINVDD VOH VDD – 0.025 — — V DC TEST Low Output Voltage VOL — — 0.025 V DC TEST Output Resistance, High ROH — 2.1 2.8 IOUT = 10 mA, VDD = 18V Output Resistance, Low ROL — 1.5 2.5 IOUT = 10 mA, VDD = 18V Peak Output Current IPK — 6.0 — A VDD = 18V Latch-Up Protection Withstand Reverse Current IREV — > 1.5 — A Duty cycle2%, t 300 µs tR — 25 35 ns. Figure 4-1, CL = 2,500 pF Fall Time tF — 25 35 ns. Figure 4-1, CL = 2,500 pF Delay Time tD1 — 55 75 ns. Figure 4-1 Delay Time tD2 — 55 75 ns. Figure 4-1 IS — 0.45 1.5 mA VIN = 3V — 55 150 µA VIN = 0V 4.5 — 18 V Input Output High Output Voltage Switching Time (Note 1) Rise Time Power Supply Power Supply Current Operating Input Voltage Note 1: VDD Switching times ensured by design. 2005-2012 Microchip Technology Inc. DS21933B-page 3 TC4420M/TC4429M DC CHARACTERISTICS (OVER OPERATING TEMPERATURE RANGE) Electrical Specifications: Unless otherwise noted, over operating temperature range with 4.5V VDD 18V. Parameters Sym Min Typ Max Units Conditions Input Logic ‘1’, High Input Voltage VIH 2.4 — — V Logic ‘0’, Low Input Voltage VIL — — 0.8 V Input Voltage Range VIN -5 — VDD + 0.3 V Input Current IIN -10 — +10 µA 0VVINVDD VOH VDD – 0.025 — — V DC TEST Low Output Voltage VOL — — 0.025 V DC TEST Output Resistance, High ROH — 3 5 IOUT = 10 mA, VDD = 18V Output Resistance, Low ROL — 2.3 5 IOUT = 10 mA, VDD = 18V Output High Output Voltage Switching Time (Note 1) Rise Time tR — 32 60 ns. Figure 4-1, CL = 2,500 pF Fall Time tF — 34 60 ns. Figure 4-1, CL = 2,500 pF Delay Time tD1 — 50 100 ns. Figure 4-1 Delay Time tD2 — 65 100 ns. Figure 4-1 IS — 0.45 3 mA VIN = 3V — 60 400 µA VIN = 0V VDD 4.5 — 18 V Power Supply Power Supply Current Operating Input Voltage Note 1: Switching times ensured by design. TEMPERATURE CHARACTERISTICS Electrical Specifications: Unless otherwise noted, all parameters apply with 4.5V VDD 18V. Parameters Sym Min Typ Max Units Specified Temperature Range (M) TA -55 — +125 °C Maximum Junction Temperature TJ — — +150 °C Storage Temperature Range TA -65 — +150 °C JA — 150 — °C/W Conditions Temperature Ranges Package Thermal Resistances Thermal Resistance, 8L-CERDIP DS21933B-page 4 2005-2012 Microchip Technology Inc. TC4420M/TC4429M 2.0 Note: TYPICAL PERFORMANCE CURVES The graphs and tables provided following this note are a statistical summary based on a limited number of samples and are provided for informational purposes only. The performance characteristics listed herein are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified operating range (e.g., outside specified power supply range) and therefore outside the warranted range. Note: Unless otherwise indicated, TA = +25°C with 4.5V VDD 18V. 120 100 80 C L = 10,000 pF 80 TIME (nsec) TIME (nsec) 100 60 C L = 4700 pF 40 C L = 2200 pF 20 0 5 7 9 11 13 C L = 2200 pF 20 0 15 Rise Time vs. Supply 5 7 9 11 13 SUPPLY VOLTAGE (V) FIGURE 2-4: Voltage. 100 80 80 60 VDD = 12V 20 TIME (nsec) VDD = 5V 40 VDD = 18V 10 1000 40 VDD = 5V VDD = 12V 10 1000 10,000 FIGURE 2-2: Load. 10,000 CAPACITIVE LOAD (pF) Rise Time vs. Capacitive t D2 t D1 20 10 0 –60 Fall Time vs. Capacitive 84 C L = 2200 pF VDD = 18V 30 FIGURE 2-3: Temperature. FIGURE 2-5: Load. SUPPLY CURRENT (mA) DELAY TIME (nsec) 40 VDD = 18V 20 CAPACITIVE LOAD (pF) 50 15 Fall Time vs. Supply 100 60 TIME (nsec) C L = 4700 pF 40 SUPPLY VOLTAGE (V) FIGURE 2-1: Voltage. C L = 10,000 pF 60 VDD = 15V 70 56 42 500 kHz 28 200 kHz 14 20 kHz –20 20 60 TA (°C) 100 140 Propagation Delay Time vs. 2005-2012 Microchip Technology Inc. 0 0 FIGURE 2-6: Capacitive Load. 100 1000 CAPACITIVE LOAD (pF) 10,000 Supply Current vs. DS21933B-page 5 TC4420M/TC4429M Note: Unless otherwise indicated, TA = +25°C with 4.5V VDD 18V. 50 40 100 mA 4 30 t FALL t RISE 20 50 mA 10 mA ROUT (Ω ) TIME (nsec) 5 C L = 2200 pF VDD = 18V 3 10 0 –60 –20 FIGURE 2-7: Temperature. 20 60 TA (°C) 100 2 140 Rise and Fall Times vs. 200 DELAY TIME (nsec) 60 DELAY TIME (nsec) 7 9 11 13 SUPPLY VOLTAGE (V) 55 tD2 50 45 tD1 LOAD = 2200 pF 160 120 INPUT 2.4V INPUT 3V 80 INPUT 5V 40 40 35 4 6 FIGURE 2-8: Supply Voltage. 1000 8 10 12 14 16 SUPPLY VOLTAGE (V) 0 18 Propagation Delay Time vs. 15 FIGURE 2-10: High-State Output Resistance vs. Supply Voltage. 65 INPUT 8V AND 10V 5 6 7 8 9 10 11 12 13 14 15 VDD (V) FIGURE 2-11: Effect of Input Amplitude on Propagation Delay. 2.5 CL = 2200 pF 18V 10V 100 5V 10 0 ROUT (Ω ) SUPPLY CURRENT (mA) 5 2 100 mA 50 mA 1.5 0 FIGURE 2-9: Frequency. DS21933B-page 6 100 1000 FREQUENCY (kHz) 10,000 Supply Current vs. 1 10 mA 5 7 9 11 13 SUPPLY VOLTAGE (V) 15 FIGURE 2-12: Low-State Output Resistance vs. Supply Voltage. 2005-2012 Microchip Technology Inc. TC4420M/TC4429M Note: Unless otherwise indicated, TA = +25°C with 4.5V VDD 18V. Crossover Area (A•S) x 10 -8 4 3 2 1 0 5 6 7 8 9 10 11 12 13 14 15 SUPPLY VOLTAGE (V) * The values on this graph represent the loss seen by the driver during one complete cycle. For a single transition, divide the value by 2. FIGURE 2-13: Crossover Energy*. 2005-2012 Microchip Technology Inc. DS21933B-page 7 TC4420M/TC4429M 3.0 PIN DESCRIPTIONS The descriptions of the pins are listed in Table 3-1. TABLE 3-1: Pin No. 8-Pin CERDIP 3.1 PIN FUNCTION TABLE Symbol 1 VDD 2 INPUT Description Supply input, 4.5V to 18V Control input, TTL/CMOS compatible input 3 NC 4 GND No Connection Ground 5 GND Ground 6 OUTPUT 7 OUTPUT 8 VDD CMOS push-pull output CMOS push-pull output Supply input, 4.5V to 18V Supply Input (VDD) The VDD input is the bias supply for the MOSFET driver and is rated for 4.5V to 18V with respect to the ground pins. The VDD input should be bypassed to ground with a local ceramic capacitor. The value of the capacitor should be chosen based on the capacitive load that is being driven. A minimum value of 1.0 µF is suggested. 3.2 Control Input The MOSFET driver input is a high-impedance, TTL/CMOS-compatible input. The input circuitry of the TC4420M/TC4429M MOSFET driver also has a “speed-up” capacitor. This helps to decrease the propagation delay times of the driver. Because of this, input signals with slow rising or falling edges should not be used, as this can result in double-pulsing of the MOSFET driver output. DS21933B-page 8 3.3 CMOS Push-Pull Output The MOSFET driver output is a low-impedance, CMOS, push-pull style output capable of driving a capacitive load with 6.0A peak currents. The MOSFET driver output is capable of withstanding 1.5A peak reverse currents of either polarity. 3.4 Ground The ground pins are the return path for the bias current and the high peak currents that discharge the load capacitor. The ground pins should be tied into a ground plane or have very short traces to the bias supply source return. 2005-2012 Microchip Technology Inc. TC4420M/TC4429M 4.0 APPLICATIONS INFORMATION +5V 90% Input VDD = 18V 0V 4.7 µF 1 +18V 0.1 µF 2 6 tR 90% 5 Input: 100 kHz, square wave, tRISE = tFALL 10 ns 10% 10% Inverting Driver TC4429M Output CL = 2,500 pF FIGURE 4-1: tD2 tF 90% 0V 7 4 tD1 Output 8 0.1 µF Input 10% +5V 90% Input 0V +18V 10% tD1 90% Output 0V tR 10% tD2 90% tF 10% Non-Inverting Driver TC4420M Switching Time Test Circuits. 2005-2012 Microchip Technology Inc. DS21933B-page 9 TC4420M/TC4429M 5.0 PACKAGING INFORMATION 5.1 Package Marking Information 8-Lead CERDIP (.300”) XXXXXXXX XXXXXNNN YYWW Legend: XX...X Y YY WW NNN e3 * Note: DS21933B-page 10 Example TC4420 MJA e3 256 1143 Customer-specific information Year code (last digit of calendar year) Year code (last 2 digits of calendar year) Week code (week of January 1 is week ‘01’) Alphanumeric traceability code Pb-free JEDEC designator for Matte Tin (Sn) This package is Pb-free. The Pb-free JEDEC designator ( e3 ) can be found on the outer packaging for this package. In the event the full Microchip part number cannot be marked on one line, it will be carried over to the next line, thus limiting the number of available characters for customer-specific information. 2005-2012 Microchip Technology Inc. TC4420M/TC4429M Note: For the most current package drawings, please see the Microchip Packaging Specification located at http://www.microchip.com/packaging 2005-2012 Microchip Technology Inc. DS21933B-page 11 TC4420M/TC4429M NOTES: DS21933B-page 12 2005-2012 Microchip Technology Inc. TC4420M/TC4429M APPENDIX A: REVISION HISTORY Revision B (March 2012) The following is the list of modifications: 1. 2. Changed JEDEC indicator on the package marking and Legend in Section 5.0 “Packaging Information”. Updated package specification drawing to the most recent Microchip standards. Revision A (February 2005) Original release of this document. 2005-2012 Microchip Technology Inc. DS21933B-page 13 TC4420M/TC4429M NOTES: DS21933B-page 14 2005-2012 Microchip Technology Inc. TC4420M/TC4429M PRODUCT IDENTIFICATION SYSTEM To order or obtain information, e.g., on pricing or delivery, refer to the factory or the listed sales office. PART NO. X XX Device Temperature Range Package Device: TC4420M: 6A High-Speed MOSFET Driver, Non-Inverting TC4429M: 6A High-Speed MOSFET Driver, Inverting Temperature Range: M = -55°C to +125°C Package: JA = Ceramic Dual In-line (300 mil Body), 8-lead 2005-2012 Microchip Technology Inc. Examples: a) TC4420MJA: 6A High-Speed MOSFET Driver, Non-inverting, 8LD CERDIP package. a) TC4429MJA: 6A High-Speed MOSFET Driver, Inverting, 8LD CERDIP package. DS21933B-page 15 TC4420M/TC4429M NOTES: DS21933B-page 16 2005-2012 Microchip Technology Inc. Note the following details of the code protection feature on Microchip devices: • Microchip products meet the specification contained in their particular Microchip Data Sheet. • Microchip believes that its family of products is one of the most secure families of its kind on the market today, when used in the intended manner and under normal conditions. • There are dishonest and possibly illegal methods used to breach the code protection feature. All of these methods, to our knowledge, require using the Microchip products in a manner outside the operating specifications contained in Microchip’s Data Sheets. Most likely, the person doing so is engaged in theft of intellectual property. • Microchip is willing to work with the customer who is concerned about the integrity of their code. • Neither Microchip nor any other semiconductor manufacturer can guarantee the security of their code. Code protection does not mean that we are guaranteeing the product as “unbreakable.” Code protection is constantly evolving. We at Microchip are committed to continuously improving the code protection features of our products. Attempts to break Microchip’s code protection feature may be a violation of the Digital Millennium Copyright Act. If such acts allow unauthorized access to your software or other copyrighted work, you may have a right to sue for relief under that Act. Information contained in this publication regarding device applications and the like is provided only for your convenience and may be superseded by updates. It is your responsibility to ensure that your application meets with your specifications. MICROCHIP MAKES NO REPRESENTATIONS OR WARRANTIES OF ANY KIND WHETHER EXPRESS OR IMPLIED, WRITTEN OR ORAL, STATUTORY OR OTHERWISE, RELATED TO THE INFORMATION, INCLUDING BUT NOT LIMITED TO ITS CONDITION, QUALITY, PERFORMANCE, MERCHANTABILITY OR FITNESS FOR PURPOSE. Microchip disclaims all liability arising from this information and its use. Use of Microchip devices in life support and/or safety applications is entirely at the buyer’s risk, and the buyer agrees to defend, indemnify and hold harmless Microchip from any and all damages, claims, suits, or expenses resulting from such use. No licenses are conveyed, implicitly or otherwise, under any Microchip intellectual property rights. Trademarks The Microchip name and logo, the Microchip logo, dsPIC, KEELOQ, KEELOQ logo, MPLAB, PIC, PICmicro, PICSTART, PIC32 logo, rfPIC and UNI/O are registered trademarks of Microchip Technology Incorporated in the U.S.A. and other countries. FilterLab, Hampshire, HI-TECH C, Linear Active Thermistor, MXDEV, MXLAB, SEEVAL and The Embedded Control Solutions Company are registered trademarks of Microchip Technology Incorporated in the U.S.A. Analog-for-the-Digital Age, Application Maestro, chipKIT, chipKIT logo, CodeGuard, dsPICDEM, dsPICDEM.net, dsPICworks, dsSPEAK, ECAN, ECONOMONITOR, FanSense, HI-TIDE, In-Circuit Serial Programming, ICSP, Mindi, MiWi, MPASM, MPLAB Certified logo, MPLIB, MPLINK, mTouch, Omniscient Code Generation, PICC, PICC-18, PICDEM, PICDEM.net, PICkit, PICtail, REAL ICE, rfLAB, Select Mode, Total Endurance, TSHARC, UniWinDriver, WiperLock and ZENA are trademarks of Microchip Technology Incorporated in the U.S.A. and other countries. SQTP is a service mark of Microchip Technology Incorporated in the U.S.A. All other trademarks mentioned herein are property of their respective companies. © 2005-2012, Microchip Technology Incorporated, Printed in the U.S.A., All Rights Reserved. Printed on recycled paper. ISBN: 978-1-62076-076-5 QUALITY MANAGEMENT SYSTEM CERTIFIED BY DNV == ISO/TS 16949 == 2005-2012 Microchip Technology Inc. Microchip received ISO/TS-16949:2009 certification for its worldwide headquarters, design and wafer fabrication facilities in Chandler and Tempe, Arizona; Gresham, Oregon and design centers in California and India. The Company’s quality system processes and procedures are for its PIC® MCUs and dsPIC® DSCs, KEELOQ® code hopping devices, Serial EEPROMs, microperipherals, nonvolatile memory and analog products. In addition, Microchip’s quality system for the design and manufacture of development systems is ISO 9001:2000 certified. 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