MICROCHIP TC429EPA

M
TC429
6A Single High-Speed, CMOS Power MOSFET Driver
Features
General Description
•
•
•
•
The TC429 is a high-speed, single CMOS-level
translator and driver. Designed specifically to drive
highly capacitive power MOSFET gates, the TC429
features 2.5Ω output impedance and 6A peak output
current drive.
•
•
•
•
High Peak Output Current: 6A
Wide Operating Range: 7V to 18V
High Impedance CMOS Logic Input
Logic Input Threshold Independent of Supply
Voltage
Low Supply Current
- With Logic 1 Input – 5mA Max
- With Logic 0 Input – 0.5mA Max
Output Voltage Swing Within 25mV of Ground
or VDD
Short Delay Time: 75nsec Max
High Capacitive Load Drive Capability
- tRISE, tFALL = 35nsec Max With
CLOAD = 2500pF
A TTL/CMOS input logic level is translated into an
output voltage swing that equals the supply and will
swing to within 25mV of ground or VDD. Input voltage
swing may equal the supply. Logic input current is
under 10µA, making direct interface to CMOS/bipolar
switch-mode power supply controllers easy. Input
“speed-up” capacitors are not required.
The CMOS design minimizes quiescent power supply
current. With a logic 1 input, power supply current is
5mA maximum and decreases to 0.5mA for logic 0
inputs.
Applications
•
•
•
•
A 2500pF capacitive load will be driven 18V in 25nsec.
The rapid switching times with large capacitive loads
minimize MOSFET transition power loss.
Switch-Mode Power Supplies
CCD Drivers
Pulse Transformer Drive
Class D Switching Amplifiers
For dual devices, see the TC426/TC427/TC428,
TC4426/TC4427/TC4428 and TC4426A/TC4427A/
TC4428A data sheets.
Device Selection Table
Part Number
Package
Temp. Range
TC429CPA
8-Pin PDIP
0°C to +70°C
TC429EPA
8-Pin PDIP
-40°C to +85°C
TC429MJA
8-Pin CERDIP
-55°C to +125°C
For noninverting applications, or applications requiring
latch-up protection, see the TC4420/TC4429 data
sheet.
Typical Application
1,8
Package Type
VDD
300mV
6,7
Output
8-Pin PDIP/CERDIP
VDD
1
8
VDD
INPUT
2
7
OUTPUT
NC
3
6
OUTPUT
GND
4
5
GND
Input
GND
TC429
2
TC429
4,5
Effective
Input
C = 38pF
NC = No internal connection
NOTE: Duplicate pins must both be connected for proper operation.
 2002 Microchip Technology Inc.
DS21416B-page 1
TC429
1.0
ELECTRICAL
CHARACTERISTICS
*Stresses above those listed under "Absolute Maximum
Ratings" may cause permanent damage to the device. These
are stress ratings only and functional operation of the device
at these or any other conditions above those indicated in the
operation sections of the specifications is not implied.
Exposure to Absolute Maximum Rating conditions for
extended periods may affect device reliability.
Absolute Maximum Ratings*
Supply Voltage .....................................................+20V
Input Voltage, Any Terminal
...................................VDD + 0.3V to GND – 0.3V
Power Dissipation (TA ≤ 70°C)
PDIP .........................................................730mW
CERDIP....................................................800mW
Derating Factor
PDIP .................................5.6mW/°C Above 36°C
CERDIP................................................6.4mW/°C
Operating Temperature Range
C Version......................................... 0°C to +70°C
E Version ......................................-40°C to +85°C
M Version ...................................-55°C to +125°C
Storage Temperature Range ..............-65°C to +150°C
TC429 ELECTRICAL SPECIFICATIONS
Electrical Characteristics: TA = +25°C with 7V ≤ VDD ≤ 18V, unless otherwise noted.
Symbol
Parameter
Min
Typ
Max
Units
V
Test Conditions
Input
VIH
Logic 1, High Input Voltage
2.4
1.8
—
VIL
Logic 0, Low Input Voltage
—
1.3
0.8
V
IIN
Input Current
-10
—
10
µA
0V ≤ VIN ≤ VDD
Output
VOH
High Output Voltage
VDD – 0.025
—
—
V
VOL
Low Output Voltage
—
—
0.025
V
RO
Output Resistance
—
1.8
2.5
Ω
VIN = 0.8V,
IOUT = 10mA, VDD = 18V
—
1.5
2.5
Ω
VIN = 2.4V,
IOUT = 10mA, VDD = 18V
—
6
—
A
VDD = 18V (Figure 3-4)
Peak Output Current
IPK
Switching Time (Note 1)
tR
Rise Time
—
23
35
nsec
Figure 3-1, CL = 2500pF
tF
Fall Time
—
25
35
nsec
Figure 3-1, CL = 2500pF
tD1
Delay Time
—
53
75
nsec
Figure 3-1
tD2
Delay Time
—
60
75
nsec
Figure 3-1
—
—
3.5
0.3
5
0.5
mA
Power Supply
Power Supply Current
IS
Note
1:
VIN = 3V
VIN = 0V
Switching times ensured by design.
DS21416B-page 2
 2002 Microchip Technology Inc.
TC429
TC429 ELECTRICAL SPECIFICATIONS (CONTINUED)
Electrical Characteristics: Over operating temperature range with 7V ≤ VDD ≤ 18V, unless otherwise noted.
Symbol
Parameter
Min
Typ
Max
Units
Test Conditions
Input
VIH
Logic 1, High Input Voltage
2.4
—
—
V
VIL
Logic 0, Low Input Voltage
—
—
0.8
V
IIN
Input Current
-10
—
10
µA
V
0V ≤ VIN ≤ VDD
Output
VOH
High Output Voltage
VDD – 0.025
—
—
VOL
Low Output Voltage
—
—
0.025
V
RO
Output Resistance
—
—
5
Ω
VIN = 0.8V,
IOUT = 10mA, VDD = 18V
—
—
5
Ω
VIN = 2.4V,
IOUT = 10mA, VDD = 18V
Figure 3-1, CL = 2500pF
Switching Time (Note 1)
tR
Rise Time
—
—
70
nsec
tF
Fall Time
—
—
70
nsec
Figure 3-1, CL = 2500pF
tD1
Delay Time
—
—
100
nsec
Figure 3-1
tD2
Delay Time
—
—
120
nsec
Figure 3-1
—
—
—
—
12
1
mA
Power Supply
Power Supply Current
IS
Note
1:
VIN = 3V
VIN = 0V
Switching times ensured by design.
 2002 Microchip Technology Inc.
DS21416B-page 3
TC429
2.0
PIN DESCRIPTIONS
The descriptions of the pins are listed in Table 2-1.
TABLE 2-1:
Pin No.
(8-Pin PDIP,
CERDIP)
PIN FUNCTION TABLE
Symbol
Description
Supply input, 7V to 18V.
1
VDD
2
INPUT
3
NC
4
GND
Ground.
5
GND
Ground.
6
OUTPUT
CMOS totem-pole output, common to Pin 7.
7
OUTPUT
CMOS totem-pole output, common to Pin 6.
8
VDD
DS21416B-page 4
Control input, TTL/CMOS compatible logic input.
No connection.
Supply input, 7V to 18V.
 2002 Microchip Technology Inc.
TC429
3.0
APPLICATIONS INFORMATION
3.1
Supply Bypassing
FIGURE 3-1:
INVERTING DRIVER
SWITCHING TIME
TEST CIRCUIT
Charging and discharging large capacitive loads
quickly requires large currents. For example, charging
a 2500pF load to 18V in 25nsec requires a 1.8A current
from the device’s power supply.
To ensure low supply impedance over a wide frequency
range, a parallel capacitor combination is recommended for supply bypassing. Low-inductance ceramic
disk capacitors with short lead lengths (< 0.5 in.) should
be used. A 1µF film capacitor in parallel with one or two
0.1µF ceramic disk capacitors normally provides
adequate bypassing.
VDD = 18V
Input
8
2
6
Output
7
CL = 2500pF
TC429
4
5
Input: 100kHz,
square wave,
tRISE = tFALL ≤ 10nsec
Grounding
The high-current capability of the TC429 demands
careful PC board layout for best performance. Since
the TC429 is an inverting driver, any ground lead
impedance will appear as negative feedback which can
degrade switching speed. The feedback is especially
noticeable with slow rise-time inputs, such as those
produced by an open-collector output with resistor pullup. The TC429 input structure includes about 300mV of
hysteresis to ensure clean transitions and freedom
from oscillation, but attention to layout is still
recommended.
Figure 3-3 shows the feedback effect in detail. As the
TC429 input begins to go positive, the output goes
negative and several amperes of current flow in the
ground lead. As little as 0.05Ω of PC trace resistance
can produce hundreds of millivolts at the TC429 ground
pins. If the driving logic is referenced to power ground,
the effective logic input level is reduced and oscillations
may result.
90%
Input
0V
10%
18V
tD1
tF
tD2
90%
tR
90%
Output
10%
0V
FIGURE 3-2:
10%
SWITCHING SPEED
INPUT
OUTPUT
CL = 2500pF
VS = 18V
5V
100ns
TIME (100ns/DIV)
CL = 2500pF
VS = 7V
VOLTAGE (5V/DIV)
To ensure optimum device performance, separate
ground traces should be provided for the logic and
power connections. Connecting logic ground directly to
the TC429 GND pins ensures full logic drive to the input
and fast output switching. Both GND pins should be
connected to power ground.
+5V
VOLTAGE (5V/DIV)
3.2
0.1µF
1µF
1
INPUT
OUTPUT
5V
100ns
TIME (100ns/DIV)
 2002 Microchip Technology Inc.
DS21416B-page 5
TC429
FIGURE 3-3:
SWITCHING TIME
DEGRADATION DUE TO
NEGATIVE FEEDBACK
FIGURE 3-4:
PEAK OUTPUT CURRENT
TEST CIRCUIT
+18V
+18V
1µF
TC429
18V
1µF
2.4V
18V
2.4V
0V
0.1µF
1
8 6,7
2
5
4
TEK Current
Probe 6302
0V
0.1µF
0V
0.1µF
8 6,7
2
5
4
TEK Current
Probe 6302
0V
0.1µF
2500pF
2500pF
TC429
Logic
Ground
300 mV
6A
PC Trace Resistance = 0.05W
Power
Ground
3.3
1
Input Stage
The input voltage level changes the no-load or
quiescent supply current. The N-channel MOSFET
input stage transistor drives a 3mA current source load.
With a logic “1” input, the maximum quiescent supply
current is 5mA. Logic “0” input level signals reduce
quiescent current to 500µA maximum.
The TC429 input is designed to provide 300mV of
hysteresis, providing clean transitions and minimizing
output stage current spiking when changing states.
Input voltage levels are approximately 1.5V, making the
device TTL compatible over the 7V to 18V operating
supply range. Input current is less than 10µA over this
range.
The TC429 can be directly driven by TL494, SG1526/
1527, SG1524, SE5560 or similar switch-mode
power supply integrated circuits. By off-loading the
power-driving duties to the TC429, the power supply
controller can operate at lower dissipation, improving
performance and reliability.
DS21416B-page 6
3.4
Power Dissipation
CMOS circuits usually permit the user to ignore power
dissipation. Logic families such as the 4000 and 74C
have outputs that can only supply a few milliamperes of
current, and even shorting outputs to ground will not
force enough current to destroy the device. The TC429,
however, can source or sink several amperes and drive
large capacitive loads at high frequency. The package
power dissipation limit can easily be exceeded.
Therefore, some attention should be given to power
dissipation when driving low impedance loads and/or
operating at high frequency.
The supply current versus frequency and supply
current versus capacitive load characteristic curves will
aid in determining power dissipation calculations.
Table 3-1 lists the maximum operating frequency for
several power supply voltages when driving a 2500pF
load. More accurate power dissipation figures can be
obtained by summing the three power sources.
Input signal duty cycle, power supply voltage and
capacitive load influence package power dissipation.
Given power dissipation and package thermal resistance, the maximum ambient operation temperature
is easily calculated. The 8-pin CERDIP junction-toambient thermal resistance is 150°C/W. At +25°C, the
package is rated at 800mW maximum dissipation.
Maximum allowable chip temperature is +150°C.
 2002 Microchip Technology Inc.
TC429
Three components make up total package power
dissipation:
Where:
TJ = Maximum allowable junction temperature
(+150°C)
θJA = Junction-to-ambient thermal resistance
(150°C/W, CERDIP)
• Capacitive load dissipation (PC)
• Quiescent power (PQ)
• Transition power (PT)
The capacitive load-caused dissipation is a direct function of frequency, capacitive load and supply voltage.
Note:
Ambient operating temperature should not
exceed +85°C for IJA devices or +125°C for
MJA devices.
The package power dissipation is:
PC = f C VS2
TABLE 3-1:
MAXIMUM OPERATING
FREQUENCIES
Where:
f
= Switching frequency
C = Capacitive load
VS = Supply voltage
Quiescent power dissipation depends on input signal
duty cycle. A logic low input results in a low-power
dissipation mode with only 0.5mA total current drain.
Logic high signals raise the current to 5mA maximum.
The quiescent power dissipation is:
VS
fMAX
18V
500kHz
15V
700kHz
10V
1.3MHz
5V
>2MHz
CONDITIONS: 1. CERDIP Package (θJA =150°C/W)
2. TA = +25°C
3. CL = 2500pF
PQ = VS (D (IH) + (1 – D) IL)
FIGURE 3-5:
Where:
IH = Quiescent current with input high (5mA max)
IL = Quiescent current with input low
(0.5mA max)
D = Duty cycle
5V/DIV
Transition power dissipation arises because the output
stage N- and P-channel MOS transistors are ON
simultaneously for a very short period when the output
changes.
The transition
approximately:
package
PT = f VS (3.3 x
10–9
power
dissipation
INPUT
500mV/DIV
(5 AMP/DIV)
OUTPUT
is
VS = 18V
RL = 0.1Ω
A • Sec)
5V
An example shows the relative magnitude for each
item.
C
VS
D
f
PD
PEAK OUTPUT
CURRENT CAPABILITY
= 2500pF
= 15V
= 50%
= 200kHz
= Package power dissipation = PC + PT + PQ
= 113mW + 10mW + 41mW
= 164mW
Maximum operating temperature = TJ – θJA (PD)
= 125°C
 2002 Microchip Technology Inc.
500mV
5µs
TIME (5µs/DIV)
3.5
Note:
POWER-ON OSCILLATION
It is extremely important that all MOSFET
Driver applications be evaluated for
the possibility of having High-Power
Oscillations occurring during the power-on
cycle.
Power-on oscillations are due to trace size and layout
as well as component placement. A ‘quick fix’ for most
applications which exhibit power-on oscillation
problems is to place approximately 10kΩ in series with
the input of the MOSFET driver.
DS21416B-page 7
TC429
4.0
TYPICAL CHARACTERISTICS
Note:
The graphs and tables provided following this note are a statistical summary based on a limited number of
samples and are provided for informational purposes only. The performance characteristics listed herein are
not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified
operating range (e.g., outside specified power supply range) and therefore outside the warranted range.
Rise/Fall Times vs. Capacitive Load
Rise/Fall Times vs. Temperature
Rise/Fall Times vs. Supply Voltage
100
60
60
°C
T
T
V
L
50
50
tF
30
20
tR
5
10
15
SUPPLY VOLTAGE (V)
10
20
Supply Current vs. Capacitive Load
-50 -25
0
1
100
25 50 75 100 125 150
°C)
90
°C
TA
V
60
80
DELAY TIME (nsec)
40
30
400kHz
20
200kHz
10
T
°C
C = 2500pF
p
VDD = +15V
70
tD2
60
120
100
tD1
50
80
tD2
60
20kHz
0
10
tD1
100
1K
CAPACITIVE LOAD (pF)
40
10K
Supply Current vs. Frequency
T
CL
4
°C
10V
40
15V
30
VDD = 18V
20
10
-50 -25
0
40
25 50 75 100 125 150
°C)
5
10
15
SUPPLY VOLTAGE (V)
T = +25°C
RL = ∞
V
= +18°C
RL = ∞
4
2
20
Supply Current vs. Temperature
Supply Current vs. Supply Voltage
SUPPLY CURRENT (mA)
50
10K
140
L
50
1K
CAPACITIVE LOAD (pF)
Delay Times vs. Supply Voltage
Delay Times vs. Temperature
70
SUPPLY CURRENT (mA)
tR
tR
10
DELAY TIME (nsec)
10
30
tF
20
SUPPLY CURRENT (mA)
TIME (nsec)
40
40
SUPPLY CURRENT (mA)
TIME (nsec)
tF
3
5V
0
1
10
100
FREQUENCY (kHz)
DS21416B-page 8
1K
0
4
8
12
16
SUPPLY VOLTAGE (V)
20
2
-75 -50 -25 0
25 50 75 100 125 150
°C)
 2002 Microchip Technology Inc.
TC429
TYPICAL CHARACTERISTICS (CONTINUED)
High Output Voltage vs. Current
TA = +25°C
HYSTERESIS
≈310mV
15
300mV
10
200mV
5
0
OUTPUT VOLTAGE (mV)
OUTPUT VOLTAGE (V)
400
TA = +25°C
300
VDD = 5V
200
15V
10V
18V
100
0.25 0.50 0.75 1 1.25 1.50 1.75 2
Low Output Voltage vs. Current
400
0
20
40
60
80
CURRENT SOURCED (mA)
INPUT VOLTAGE (V)
100
OUTPUT VOLTAGE (mV)
Voltage Transfer Characteristics
20
TA = +25°C
300
VDD = 5V
200
10V
15V
100
18V
0
20
40
60
80
100
CURRENT SUNK (mA)
Thermal Derating Curves
1600
MAX. POWER (mW)
1400
8-Pin DIP
1200
8-Pin CERDIP
81000
800
600
400
200
0
0
10
20
30
40
50
60
70
80
90
100
110
120
AMBIENT TEMPERATURE (°C)
 2002 Microchip Technology Inc.
DS21416B-page 9
TC429
5.0
PACKAGING INFORMATION
5.1
Package Marking Information
Package marking data not available at this time.
5.2
Package Dimensions
8-Pin Plastic DIP
PIN 1
.260 (6.60)
.240 (6.10)
.045 (1.14)
.030 (0.76)
.070 (1.78)
.040 (1.02)
.310 (7.87)
.290 (7.37)
.400 (10.16)
.348 (8.84)
.200 (5.08)
.140 (3.56)
.040 (1.02)
.020 (0.51)
.150 (3.81)
.115 (2.92)
.110 (2.79)
.090 (2.29)
.015 (0.38)
.008 (0.20)
3° MIN.
.400 (10.16)
.310 (7.87)
.022 (0.56)
.015 (0.38)
Dimensions: inches (mm)
8-Pin CERDIP (Narrow)
.110 (2.79)
.090 (2.29)
PIN 1
.300 (7.62)
.230 (5.84)
.020 (0.51) MIN.
.055 (1.40) MAX.
.320 (8.13)
.290 (7.37)
.400 (10.16)
.370 (9.40)
.200 (5.08)
.160 (4.06)
.040 (1.02)
.020 (0.51)
.150 (3.81)
MIN.
.200 (5.08)
.125 (3.18)
.015 (0.38)
.008 (0.20)
3° MIN.
.400 (10.16)
.320 (8.13)
.065 (1.65) .020 (0.51)
.045 (1.14) .016 (0.41)
Dimensions: inches (mm)
DS21416B-page 10
 2002 Microchip Technology Inc.
TC429
Sales and Support
Data Sheets
Products supported by a preliminary Data Sheet may have an errata sheet describing minor operational differences and recommended workarounds. To determine if an errata sheet exists for a particular device, please contact one of the following:
1.
2.
3.
Your local Microchip sales office
The Microchip Corporate Literature Center U.S. FAX: (480) 792-7277
The Microchip Worldwide Site (www.microchip.com)
Please specify which device, revision of silicon and Data Sheet (include Literature #) you are using.
New Customer Notification System
Register on our web site (www.microchip.com/cn) to receive the most current information on our products.
 2002 Microchip Technology Inc.
DS21416B-page11
TC429
NOTES:
DS21416B-page12
 2002 Microchip Technology Inc.
TC429
Information contained in this publication regarding device
applications and the like is intended through suggestion only
and may be superseded by updates. It is your responsibility to
ensure that your application meets with your specifications.
No representation or warranty is given and no liability is
assumed by Microchip Technology Incorporated with respect
to the accuracy or use of such information, or infringement of
patents or other intellectual property rights arising from such
use or otherwise. Use of Microchip’s products as critical components in life support systems is not authorized except with
express written approval by Microchip. No licenses are conveyed, implicitly or otherwise, under any intellectual property
rights.
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 2002 Microchip Technology Inc.
DS21416B-page 13
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Los Angeles
18201 Von Karman, Suite 1090
Irvine, CA 92612
Tel: 949-263-1888 Fax: 949-263-1338
China - Chengdu
Microchip Technology Consulting (Shanghai)
Co., Ltd., Chengdu Liaison Office
Rm. 2401, 24th Floor,
Ming Xing Financial Tower
No. 88 TIDU Street
Chengdu 610016, China
Tel: 86-28-6766200 Fax: 86-28-6766599
China - Fuzhou
Microchip Technology Consulting (Shanghai)
Co., Ltd., Fuzhou Liaison Office
Unit 28F, World Trade Plaza
No. 71 Wusi Road
Fuzhou 350001, China
Tel: 86-591-7503506 Fax: 86-591-7503521
China - Shanghai
Microchip Technology Consulting (Shanghai)
Co., Ltd.
Room 701, Bldg. B
Far East International Plaza
No. 317 Xian Xia Road
Shanghai, 200051
Tel: 86-21-6275-5700 Fax: 86-21-6275-5060
China - Shenzhen
150 Motor Parkway, Suite 202
Hauppauge, NY 11788
Tel: 631-273-5305 Fax: 631-273-5335
Microchip Technology Consulting (Shanghai)
Co., Ltd., Shenzhen Liaison Office
Rm. 1315, 13/F, Shenzhen Kerry Centre,
Renminnan Lu
Shenzhen 518001, China
Tel: 86-755-2350361 Fax: 86-755-2366086
San Jose
Hong Kong
Microchip Technology Inc.
2107 North First Street, Suite 590
San Jose, CA 95131
Tel: 408-436-7950 Fax: 408-436-7955
Microchip Technology Hongkong Ltd.
Unit 901-6, Tower 2, Metroplaza
223 Hing Fong Road
Kwai Fong, N.T., Hong Kong
Tel: 852-2401-1200 Fax: 852-2401-3431
New York
Toronto
6285 Northam Drive, Suite 108
Mississauga, Ontario L4V 1X5, Canada
Tel: 905-673-0699 Fax: 905-673-6509
India
Microchip Technology Inc.
India Liaison Office
Divyasree Chambers
1 Floor, Wing A (A3/A4)
No. 11, O’Shaugnessey Road
Bangalore, 560 025, India
Tel: 91-80-2290061 Fax: 91-80-2290062
Korea
Microchip Technology Korea
168-1, Youngbo Bldg. 3 Floor
Samsung-Dong, Kangnam-Ku
Seoul, Korea 135-882
Tel: 82-2-554-7200 Fax: 82-2-558-5934
Singapore
Microchip Technology Singapore Pte Ltd.
200 Middle Road
#07-02 Prime Centre
Singapore, 188980
Tel: 65-6334-8870 Fax: 65-6334-8850
Taiwan
Microchip Technology Taiwan
11F-3, No. 207
Tung Hua North Road
Taipei, 105, Taiwan
Tel: 886-2-2717-7175 Fax: 886-2-2545-0139
EUROPE
Denmark
Microchip Technology Nordic ApS
Regus Business Centre
Lautrup hoj 1-3
Ballerup DK-2750 Denmark
Tel: 45 4420 9895 Fax: 45 4420 9910
France
Microchip Technology SARL
Parc d’Activite du Moulin de Massy
43 Rue du Saule Trapu
Batiment A - ler Etage
91300 Massy, France
Tel: 33-1-69-53-63-20 Fax: 33-1-69-30-90-79
Germany
Microchip Technology GmbH
Gustav-Heinemann Ring 125
D-81739 Munich, Germany
Tel: 49-89-627-144 0 Fax: 49-89-627-144-44
Italy
Microchip Technology SRL
Centro Direzionale Colleoni
Palazzo Taurus 1 V. Le Colleoni 1
20041 Agrate Brianza
Milan, Italy
Tel: 39-039-65791-1 Fax: 39-039-6899883
United Kingdom
Arizona Microchip Technology Ltd.
505 Eskdale Road
Winnersh Triangle
Wokingham
Berkshire, England RG41 5TU
Tel: 44 118 921 5869 Fax: 44-118 921-5820
03/01/02
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DS21416B-page 14
 2002 Microchip Technology Inc.